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GD100FFX170C6S
IGBT Module, Three Phase Full Bridge, 168 A, 1.85 V, 632 W, 150 °C, Module
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- Manufacturer: STARPOWER
- Product type: IGBT Modules
- SVHC: To Be Advised
- Product Range: -
- IGBT Technology: Trench Field Stop
- IGBT Termination: Press Fit
- Power Dissipation: 632W
- IGBT Configuration: Three Phase Full Bridge
- Transistor Mounting: Panel
- DC Collector Current: 168A
- Power Dissipation Pd: 632W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 168A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 122.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
GD100FFX170C6S IGBT Module
## **STARPOWER**
## **SEMICONDUCTOR IGBT**
## **GD100FFX170C6S**
## **1200V/100A 6 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- Uninterruptible power supply
- Inductive heating
- Welding machine
## **Equivalent Circuit Schematic**
**==> picture [418 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 1/9 Preliminary<br>**----- End of picture text -----**<br>
GD100FFX170C6S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1700|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25~~o~~C<br>@ TC=100oC|168<br>100|A|
|ICM|PulsedCollectorCurrent tp=1ms|200|A|
|PD|Maximum Power Dissipation @ Tj=175~~o~~C|632|W|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1700|V|
|IF|Diode Continuous Forward Current|100|A|
|IFM|Diode Maximum ForwardCurrent tp=1ms|200|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 2/9 Preliminary
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25oC||1.85|2.20|V|
|||IC=100A,VGE=15V,<br>Tj=125oC||2.25|||
|||IC=100A,VGE=15V,<br>Tj=150oC||2.35|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=4.0mA,VCE=VGE,<br>Tj=25oC|5.6|6.2|6.8|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||7.5||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||12.0||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.29||nF|
|QG|GateCharge|VGE=-15…+15V||0.94||μC|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=25oC||187||ns|
|tr|Rise Time|||31||ns|
|td(off)|Turn-Off DelayTime|||434||ns|
|tf|Fall Time|||363||ns|
|Eon|Turn-On Switching<br>Loss|||18.5||mJ|
|Eoff|Turn-Off Switching<br>Loss|||20.8||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=125oC||194||ns|
|tr|Rise Time|||44||ns|
|td(off)|Turn-Off DelayTime|||503||ns|
|tf|Fall Time|||637||ns|
|Eon|Turn-On Switching<br>Loss|||30.3||mJ|
|Eoff|Turn-Off Switching<br>Loss|||32.1||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=100A,<br>RG=4.8Ω,VGE=±15V,<br>Tj=150oC||202||ns|
|tr|Rise Time|||55||ns|
|td(off)|Turn-Off DelayTime|||512||ns|
|tf|Fall Time|||720||ns|
|Eon|Turn-On Switching<br>Loss|||33.0||mJ|
|Eoff|Turn-Off Switching<br>Loss|||34.8||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=1000V,<br>VCEM≤1700V||400||A|
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 3/9 Preliminary
**Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=100A,VGE=0V,Tj=25~~o~~C||1.80|2.25|V|
|||IF=100A,VGE=0V,Tj=125~~o~~C||1.90|||
|||IF=100A,VGE=0V,Tj=150~~o~~C||1.95|||
|Qr|Recovered Charge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=25oC||17.8||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||103||A|
|Erec|Reverse Recovery<br>Energy|||9.78||mJ|
|Qr|RecoveredCharge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=125oC||33.7||μC|
|IRM|Peak Reverse<br>Recovery Current|||107||A|
|Erec|Reverse Recovery<br>Energy|||19.4||mJ|
|Qr|RecoveredCharge|VR=900V,IF=100A,<br>-di/dt=3550A/μs,VGE=-15V<br>Tj=150oC||37.4||μC|
|IRM|Peak Reverse<br>Recovery Current|||106||A|
|Erec|Reverse Recovery<br>Energy|||23.8||mJ|
**NTC Characteristics** TC=25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Rated Resistance|||5.0||kΩ|
|∆R/R|Deviation of R100|TC=100~~o~~C,R100=493.3Ω|-5||5|%|
|P25|Power<br>Dissipation||||20.0|mW|
|B25/50|B-value|R2=R25exp[B25/50(1/T2-<br>1/(298.15K))]||3375||K|
|B25/80|B-value|R2=R25exp[B25/80(1/T2-<br>1/(298.15K))]||3411||K|
|B25/100|B-value|R2=R25exp[B25/100(1/T2-<br>1/(298.15K))]||3433||K|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance||21||nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||1.80||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.237<br>0.397|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.086<br>0.144<br>0.009||K/W|
|M|MountingScrew:M5|3.0||6.0|N.m|
|G|Weight of Module||300||g|
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 4/9 Preliminary
GD100FFX170C6S IGBT Module
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**----- Start of picture text -----**<br>
200 200<br>175 VGE=15V 175<br>VCE=20V<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>Tj=25℃<br>Tj=25℃<br>25 Tj=125℃ 25<br>Tj=125℃<br>Tj=150℃ Tj=150℃<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br>Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics<br>80 80<br>Eon Tj=125℃ Eon Tj=125℃<br>Eoff Tj=125℃ Eoff Tj=125℃<br>70 70<br>Eon Tj=150℃ Eon Tj=150℃<br>Eoff Tj=150℃ Eoff Tj=150℃<br>60 60<br>VCC=900V<br>50 RG=4.8Ω 50<br>VGE= ± 15V<br>40 40<br>30 30<br>20 20<br>VCC=900V<br>10 10 IC=100A<br>VGE= ± 15V<br>0 0<br>0 50 100 150 200 0 10 20 30 40 50<br>IC [A] RG [Ω]<br>Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG<br> [A] [A]<br>C C<br>I I<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 5/9 Preliminary
GD100FFX170C6S IGBT Module
**==> picture [513 x 657] intentionally omitted <==**
**----- Start of picture text -----**<br>
250 1<br>IGBT<br>Module<br>200<br>0.1<br>150<br>100<br>0.01<br>50 RG=4.8Ω i: 1 2 3 4<br>VGE= ± 15V rτii[K/W]: 0.0135 0.0786 0.0760 0.0689 [s]: 0.01 0.02 0.05 0.1<br>T =150 [o] C<br>j<br>0 0.001<br>0 300 600 900 1200 1500 1800 0.001 0.01 0.1 1 10<br>VCE [V] t [s]<br>Fig 5. IGBT RBSOA Fig 6. IGBT Transient Thermal Impedance<br>200 40<br>Tj=25℃ Erec Tj=125℃<br>Tj=125℃<br>175 35 Erec Tj=150℃<br>Tj=150℃<br>150 30<br>125 25<br>100 20<br>75 15<br>50 10 VCC=900V<br>RG=4.8Ω<br>25 5 VGE=-15V<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200<br>VF [V] IF [A]<br> [A] [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 6/9 Preliminary
GD100FFX170C6S IGBT Module
**==> picture [516 x 657] intentionally omitted <==**
**----- Start of picture text -----**<br>
40 1<br>Erec Tj=125℃<br>Diode<br>Erec Tj=150℃<br>30<br>0.1<br>20<br>0.01<br>10<br>VCC=900V ri: 1 2 3 4 i[K/W]: 0.0236 0.1309 0.1272 0.1153<br>IF=100A τi[s]: 0.01 0.02 0.05 0.1<br>VGE=-15V<br>0 0.001<br>0 10 20 30 40 50 0.001 0.01 0.1 1 10<br>RG [Ω] t [s]<br>Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance<br>100<br>10<br>1<br>0.1<br>0 30 60 90 120 150<br>TC [ [o] C]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>R [kΩ]<br>**----- End of picture text -----**<br>
Fig 11. NTC Temperature Characteristic
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 7/9 Preliminary
GD100FFX170C6S IGBT Module
## **Circuit Schematic**
## **Package Dimensions**
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**----- Start of picture text -----**<br>
Dimensions in Millimeters<br>A<br>A<br>_ i] !<br>27 24 21 19<br>1<br>' i<br>| i t<br>1<br>' i<br>-<br>1 3 5 7 9 11<br>30<br>6<br>1<br>33<br>3<br>1<br>**----- End of picture text -----**<br>
- ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 8/9 Preliminary
GD100FFX170C6S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2019 STARPOWER Semiconductor Ltd. 5/19/2019 9/9 Preliminary
Updated at April 17, 2026
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