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GC2X15MPS12-247
Silicon Carbide Schottky Diode, MPS, Dual Common Cathode, 1.2 kV, 150 A, 132 nC, TO-247
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- Manufacturer: GENESIC
- Product type: Silicon Carbide Schottky Diodes
- Product Range:MPS Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:15; Available until stocks are exhausted
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 3 Pin
- Product Range: MPS
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Dual Common Cathode
- Average Forward Current: 150A
- Total Capacitive Charge: 132nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 11.66 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **TM** ## **Silicon Carbide Schottky Diode** **VRRM = 1200 V IF (TC = 153°C) = 30 A * QC = 160 nC *** | ## **Features** - Low VF for High Temperature Operation - Enhanced Surge and Avalanche Robustness - Superior Figure of Merit QC/IF - Low Thermal Resistance - Low Reverse Leakage Current - Temperature Independent Fast Switching - Positive Temperature Coefficient of VF - High dV/dt Ruggedness ## **Package** **==> picture [218 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> Case<br>RoHS<br>TO-247-3 A K A REACH<br>**----- End of picture text -----**<br> ## **Advantages** - Improved System Efficiency - High System Reliability - Optimal Price Performance - Reduced Cooling Requirements - Increased System Power Density - Zero Reverse Recovery Current - Easy to Parallel without Thermal Runaway - Enables Extremely Fast Switching ## **Applications** - Power Factor Correction (PFC) - Electric Vehicles and Battery Chargers - Solar Inverters - High Frequency Converters - Switched Mode Power Supply (SMPS) - Motor Drives - Anti-Parallel / Free-Wheeling Diode - LED and HID Lighting ## **Absolute Maximum Ratings** (At TC = 25°C Unless Otherwise Stated) **==> picture [531 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Parameter|Symbol|Conditions|Values|Unit|Note| |Repetitive Peak Reverse Voltage (Per Leg)|VRRM|1200|V| |TC = 100°C, D = 1|32 / 64| |Continuous Forward Current (Per Leg / Per Device)|I F|TC = 135°C, D = 1|22 / 44|A|Fig. 4| |TC = 153°C, D = 1|15 / 30| |Non-Repetitive Peak Forward Surge Current, Half Sine|TC = 25°C, tP = 10 ms|150| |IF,SM|A| |Wave (Per Leg)|TC = 150°C, tP = 10 ms|120| |Repetitive Peak Forward Surge Current, Half Sine Wave|TC = 25°C, tP = 10 ms|90| |IF,RM|A| |(Per Leg)|TC = 150°C, tP = 10 ms|63| |Non-Repetitive Peak Forward Surge Current (Per Leg)|IF,MAX|TC = 25°C, tP = 10 µs|750|A| |i2t Value (Per Leg)|∫i2dt|TC = 25°C, tP = 10 ms|112|A s 2| |Non-Repetitive Avalanche Energy (Per Leg)|EAS|L = 2.4 mH, IAS = 15 A|270|mJ| |Diode Ruggedness (Per Leg)|dV/dt|VR = 0 ~ 960 V|200|V/ns| |Power Dissipation (Per Leg / Per Device)|PTOT|TC = 25°C|199 / 398|W|Fig. 3| |Operating and Storage Temperature|T , Tj|stg|-55 to 175|°C| **----- End of picture text -----**<br> _* Per Device_ **Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 1 of 7** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **TM** ## **Electrical Characteristics (Per Leg)** **==> picture [536 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>I = 15 A, T = 25°C F j 1.5 1.8<br>Diode Forward Voltage V F V Fig. 1<br>I = 15 A, T = 175°C F j 1.9<br>VR = 1200 V, T = 25°C j 2 10<br>Reverse Current IR µA Fig. 2<br>VR = 1200 V, T = 175°C j 17<br>VR = 400 V 55<br>Total Capacitive Charge QC nC Fig. 7<br>I ≤ IF F,MAX VR = 800 V 80<br>dI /dt = 200 A/µs F VR = 400 V<br>Switching Time tS < 10 ns<br>VR = 800 V<br>VR = 1 V, f = 1MHz 914<br>Total Capacitance C pF Fig. 6<br>VR = 800 V, f = 1MHz 53<br>Thermal/Package Characteristics<br>Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>Thermal Resistance, Junction - Case<br>RthJC 0.75 °C/W Fig. 9<br>(Per Leg)<br>Weight WT 6.1 g<br>Mounting Torque TM Screws to Heatsink 1.1 Nm<br>**----- End of picture text -----**<br> ## **Thermal/Package Characteristics** **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 2 of 7** **Rev 21/Jul** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **TM** **Figure 1: Typical Forward Characteristics (Per Leg)** IF = f(VF,T); tj P = 250 µs **Figure 3: Power Derating Curves (Per Leg)** **==> picture [97 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> PTOT = f(TC); T = 175°C j<br>**----- End of picture text -----**<br> **Figure 2: Typical Reverse Characteristics (Per Leg)** **==> picture [46 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IR = f(VR,T)j<br>**----- End of picture text -----**<br> **==> picture [251 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4: Current Derating Curves (Typical VF) (Per Leg)<br>**----- End of picture text -----**<br> **==> picture [169 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br> **Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 3 of 7** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **TM** **Figure 5: Current Derating Curves (Maximum VF) (Per Leg)** IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz **Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics (Per Leg)** **==> picture [83 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics (Per Leg)** **==> picture [78 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics (Per Leg)** **==> picture [82 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 4 of 7** **Rev 21/Jul** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> **Figure 9: Transient Thermal Impedance (Per Leg)** **==> picture [89 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Zth,jc = f(tP,D); D = tP/T<br>**----- End of picture text -----**<br> **Figure 10: Forward Curve Model (Per Leg)** ## **Forward Curve Model Equation:** IF = (VF - VBI)/RDIFF (A) eel **Built-In Voltage (VBI):** VBI(T) = j m × T + j n (V) m = -0.00123 (V/°C) n = 0.995 (V) **Differential Resistance (RDIFF):** **==> picture [90 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> 1/RDIFF<br>VBI<br>Forward<br>IF = f(VF,T)j<br>**----- End of picture text -----**<br> - RDIFF(T) = j a × Tj[2] + b × T + j c (Ω) a = 7.95e-07 (Ω/°C2) b = 0.000113 (Ω/°C) c = 0.0334 (Ω) **Forward Power Loss Equation:** PLOSS = VBI(T) × Ij AVG + RDIFF(T) × Ij RMS[2] **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 5 of 7** **Rev 21/Jul** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Package Dimensions** ## **TO-247-3 Package Outline** **==> picture [535 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 0.170 (4.32) 0.620 (15.75)0.635 (16.13) _ 0.190 (4.83)0.205 (5.21) 0.530 (13.46)0.557 (14.16) 0.047<br>0.216 (5.49) (1.19)<br>0.085 (2.16)0.108 (2.75) a wh 0.059 (1.50)0.098 (2.49) if<br>_t 0.212 (5.39) 0.238 (6.04)<br>=I 0.244 (6.20) 0.248 (6.30.)<br>0.819<br>0.831 0.640 (16.25)<br>(20.80) Ø 0.140 (3.56) 0.695 (17.65)<br>(21.10) Ø 0.144 (3.65)<br>Ø 0.283 (7.19) REF<br>- “oewal — —<br>0.161 (4.10)<br>0.173 (4.40)<br>0.780<br>0.800 0.113 (2.87)<br>(19.81) 0.127 (3.22)<br>0.075 (1.91)<br>(20.32)<br>0.094 (2.39)<br>0.022 (0.55)<br>0.044 (1.12)0.052 (1.33) 0.214 (5.44) BSC. 0.027 (0.69) 0.090 (2.29)<br>0.100 (2.55)<br>le g f p EL<br>oe oe Recommended Solder Pad Layout Package View<br>Case (K)<br>|<br>+o 0.12 (3.05)<br>0.214 (5.44)<br>0.08 (2.03)<br>A<br>0.214 (5.44) A<br>ot ad K<br>**----- End of picture text -----**<br> ## **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247.pdf** **Page 6 of 7** **Rev 21/Jul** **GC2X15MPS12-247 1200V 30A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Compliance** ## **RoHS Compliance** The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. ## **REACH Compliance** REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. ## **Disclaimer** GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. ## **Related Links** - SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247_SPICE.zip - PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247_PLECS.zip - CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X15MPS12-247/GC2X15MPS12-247_3D.zip - Evaluation Boards: https://www.genesicsemi.com/technical-support - Reliability: https://www.genesicsemi.com/reliability - Compliance: https://www.genesicsemi.com/compliance - Quality Manual: https://www.genesicsemi.com/quality ## **Revision History** - Rev 21/Jul: Updated with most recent test data - Supersedes: Rev 19/Apr, Rev 20/Apr, Rev 20/Aug **==> picture [86 x 86] intentionally omitted <==** ## **www.genesicsemi.com/sic-schottky-mps/** **==> picture [90 x 78] intentionally omitted <==** **Rev 21/Jul Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved.** **Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7**
Updated at April 22, 2026
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