GC2X10MPS12-247

## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

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iode                                                  VRRM  =  1200 V<br>IF (Tc  =  135°C)  =  48 A*<br>QC  =  80 nC*<br>Package<br>Case<br>[oe] Case<br>A<br>%<br>ure  A<br>ehavior  . K ¥ f h<br>TO-247-3 A K A<br>**----- End of picture text -----**<br>


## **Silicon Carbide Schottky D** 

## **Features** 

- High Avalanche (UIS) Capability 

- Enhanced Surge Current Capability 

- Superior Figure of Merit QC/IF 

- Low Thermal Resistance 

- 175 °C Maximum Operating Tempera **t** ure  Temperature Independent Switching **B** ehavior 

- Positive Temperature Coefficient of V **F** 

- Extremely Fast Switching Speeds 

## **Advantages** 

- Low Standby Power Losses 

- Improved Circuit Efficiency (Lower Overall Cost) 

- Low Switching Losses 

- Ease of Paralleling without Thermal Runaway 

- Smaller Heat Sink Requirements 

- Low Reverse Recovery Current 

- Low Device Capacitance 

- Low Reverse Leakage Current 

## **Applications** 

- Boost Diode in Power Factor Correction (PFC)  Switched Mode Power Suppl **y** (SMPS)  Uninterruptible Power Supply (UPS) 

- Motor Drives 

- Freewheeling / Anti-parallel **D** iode in Inverters 

- Solar Inverters 

- LED and HID Lighting 

- AC-DC Converters & Auxiliar **y** Power Supplies 

**Absolute Maximum Ratings** (At TC = 25 °C Unless Otherwise Stated) 

|**Parameter**|**Symbol**|**Conditions**|**Value**<br>**s**|**Unit**|
|---|---|---|---|---|
|Repetitive Peak Reverse Voltage<br>(Per Leg)|VRRM||120**0**|V|
|||TC= 25 °C, D = 1|50/1**0**<br>0||
|Continuous Forward Current<br>(Per Leg / Per Device)|IF|TC= 135 °C, D = 1|24/4<br>8|A|
|||TC= 166 °C, D = 1|10/2<br>0||
|Non-Repetitive Peak Forward Surge<br>Current, Half Sine Wave (Per Leg)|IF,SM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|82<br>66|A|
|Repetitive Peak Forward Surge Current,<br>Half Sine Wave (Per Leg)|IF,RM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|50<br>34|A|
|Non-Repetitive Peak Forward Surge<br>Current (Per Leg)|IF,max|TC= 25 °C, tP= 10 µs|78**0**|A|
|i2t Value (Per Leg)|∫i2 dt|TC= 25 °C, tP= 10 ms|34|A2s|
|Non-Repetitive Avalanche Energy<br>(Per Leg)|EAS|L = 2.2 mH, IAS= 10 A|11**0**|mJ|
|Diode Ruggedness (Per Leg)|dV/dt|VR= 0 ~ 960 V|10**0**|V/ns|
|Power Dissipation (Per Leg / Per Device)|Ptot|TC= 25 °C|336/6<br>72|W|
|Operating and Storage Temperature|Tj, Tstg||-55 to**1**<br>75|°C|



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## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

## **Electrical Characteristics (Per Leg)** 

|||||**Value**<br>**s**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Diode Forward Voltage|VF|IF= 10 A, Tj= 25 °C<br>IF= 10 A, Tj= 175 °C||1.5<br>2|1.8<br>2.4|V|
|Reverse Current|IR|VR= 1200 V, Tj= 25 °C<br>VR= 1200 V, Tj= 175 °C||1<br>3|10<br>36|µA|
|||VR= 400 V||27|||
|Total Capacitive Charge|QC|IF≤ IF,MAX<br>VR= 800 V||40||nC|
|||dIF/dt = 200 A/μs|||||
|Switching Time|ts|Tj = 175 °C<br>VR= 400 V<br>VR= 800 V||< 1**0**||ns|
|Total Capacitance|C|VR= 1 V, f = 1 MHz, Tj= 25 °C<br>VR= 800 V, f = 1 MHz, Tj= 25 °C||660<br>50||pF|



## **Thermal / Mechanical Characteristics** 

|Thermal Resistance, Junction – Case<br>(Per Leg)|RthJC|0.3**8**|°C/W|
|---|---|---|---|
|Weight|WT|6.1|g|
|Mounting Torque|TM|1.1|Nm|



_* Per Device_ 

## J) 

## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

IF = f(VF,Tj); tP = 10 µs 

**Figure 1: Typical Forward Characteristics (Per Leg)** 

IF = f(VF,Tj); tP = **1** 0 µs 

**Figure 2: Typical High Current Forward Characteristics (Per Leg)** 

IR = f(VR,Tj) 

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Ptot = f(Tc)<br>**----- End of picture text -----**<br>


**Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve (Per Leg) (Per Leg)** 

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## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 5: Current Derating Curves (Per Leg)** 

**Figure 6: Typical Junction Capacitance vs. Reverse Voltage Characteristics (Per Leg)** 

Qc = f(VR); Tj = 25 °C; f = 1 MHz 

EC = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 7: Typical Capacitive Charge vs. Reverse Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics (Per Leg) Voltage Characteristics (Per Leg)** 

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## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

Zth,jc = f(tP,D); D = tP/T 

## **Figure 9: Transient Thermal Impedance (Per Leg)** 

IF = (VF – VBI)/RDIFF[ (A) ] 

## **Built-In Voltage (VBI):** 

VBI(Tj) = m*Tj + **n** (V), m = -1.55e-03, n **=** 1.01 **Differential Resistance (RDIFF):** RDIFF(Tj) = a*Tj2 + b* **T** j[ + c (Ω); ] a = 1.26e-06, b = 2.11e- **0** 4, c = 0.0447 

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IF = f(VF, Tj)<br>**----- End of picture text -----**<br>


**Figure 10: Forward Curve Model (Per Leg)** 

J >. 

## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

## **Package Dimensions** 

## **TO-247-3L** 

## **Package Outline** 

## **Recommended Solder Pad Layout** 

**NOTE** 

1. CONTROLLED DIMENSION IS INCH. DIMEN **S** ION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLAS **H** , MOLD FLASH, MATERIAL PROTRUSIONS 

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## **GC2X10MPS12-247** 

## 1200 V SiC MPS™ Diode 

## **RoHS Compliance** 

The levels of RoHS restricted materi **a** ls in this product are below the maximum con **c** entration values (also referred to as the threshold limits) pe **r** mitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65 **/** EC (RoHS), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your **G** eneSiC representative. 

## **REACh Compliance** 

REACh substances of high concern **(** SVHCs) information is available for this product **.** Since the European Chemical Agency (ECHA) has publis **h** ed notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a G **e** neSiC representative to insure you get the most up **-** to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available up **o** n request. 

This product has not been designed or **t** ested for use in, and is not intended for use in, app **l** ications implanted into the human body nor in applications in **w** hich failure of the product could lead to death, per **s** onal injury or property damage, including but not limited to e **q** uipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emerg **e** ncy medical equipment, aircraft navigation or co **m** munication or control systems, or air traffic control systems. 

GeneSiC disclaims all and any warran **t** y and liability arising out of use or application of a **n** y product. No license, express or implied to any intellectual pr **o** perty rights is granted by this document. 

## **Related Links** 

- Soldering Document: http://ww **w** .genesicsemi.com/technical-support/quality/ 

- Tin-Whisker Report: http://www.genesicsemi.com/technical-support/compliance/  Reliability Report: http://www.g **e** nesicsemi.com/technical-support/reliability/