GC20MPS12-220

## **GC20MPS12-220** 

1200 V SiC MPS™ Diode 

## **Silicon Carbide Schottky Diode** 

**VRRM = 1200 V IF (Tc** = **135°C) = 46 A QC = 66 nC** 

## **Features** 

- High Avalanche (UIS) Capability 

- Enhanced Surge Current Capability 

- Superior Figure of Merit QC/IF 

- Low Thermal Resistance 

- 175 °C Maximum Operating Tempera **t** ure  Temperature Independent Switching **B** ehavior 

- Positive Temperature Coefficient of V **F** 

- Extremely Fast Switching Speeds 

## **Package** 

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Case o<br>A<br>K<br>TO-220-2<br>**----- End of picture text -----**<br>


## **Advantages** 

- Low Standby Power Losses 

- Improved Circuit Efficiency (Lower Overall Cost) 

- Low Switching Losses 

- Ease of Paralleling without Thermal Runaway 

- Smaller Heat Sink Requirements 

- Low Reverse Recovery Current 

- Low Device Capacitance 

- Low Reverse Leakage Current 

## **Applications** 

- Boost Diode in Power Factor Correction (PFC)  Switched Mode Power Suppl **y** (SMPS)  Uninterruptible Power Supply (UPS)  Motor Drives  Freewheeling / Anti-parallel **D** iode in Inverters  Solar Inverters  Electric Vehicles (EV) & Cha **r** ging Stations 

- Induction Heating & Welding 

## **Absolute Maximum Ratings** (At TC = 25 °C Unless Otherwise Stated) 

|**Parameter**|**Symbol**|**Conditions**|**Value**<br>**s**|**Unit**|
|---|---|---|---|---|
|Repetitive Peak Reverse Voltage|VRRM||120**0**|V|
|||TC= 25 °C, D = 1|94||
|Continuous Forward Current|IF|TC= 135 °C, D = 1|46|A|
|||TC= 165 °C, D = 1|20||
|Non-Repetitive Peak Forward Surge<br>Current, Half Sine Wave|IF,SM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|12**0**<br>96|A|
|Repetitive Peak Forward Surge Current,<br>Half Sine Wave|IF,RM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|82<br>55|A|
|Non-Repetitive Peak Forward Surge<br>Current|IF,max|TC= 25 °C, tP= 10 µs|110**0**|A|
|i2t Value|∫i2 dt|TC= 25 °C, tP= 10 ms|72|A2s|
|Non-Repetitive Avalanche Energy|EAS|L = 1 mH, IAS= 20 A|22**0**|mJ|
|Diode Ruggedness|dV/dt|VR= 0 ~ 960 V|10**0**|V/ns|
|Power Dissipation|Ptot|TC= 25 °C|59**7**|W|
|Operating and Storage Temperature|Tj, Tstg||-55 to**1**<br>75|°C|



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## **GC20MPS12-220** 

1200 V SiC MPS™ Diode 

## **Electrical Characteristics** 

|||||**Value**<br>**s**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Diode Forward Voltage|VF|IF= 20.0 A, Tj= 25 °C<br>IF= 20.0 A, Tj= 175 °C||1.5<br>2|1.8<br>2.4|V|
|Reverse Current|IR|VR= 1200 V, Tj= 25 °C<br>VR= 1200 V, Tj= 175 °C||1.8<br>5.4|18<br>64.8|µA|
|||VR= 400 V||54|||
|Total Capacitive Charge|QC|IF≤ IF,MAX<br>VR= 800 V||79||nC|
|||dIF/dt = 200 A/μs|||||
|Switching Time|ts|Tj = 175 °C<br>VR= 400 V<br>VR= 800 V||< 1**0**||ns|
|Total Capacitance|C|VR= 1 V, f = 1 MHz, Tj= 25 °C<br>VR= 800 V, f = 1 MHz, Tj= 25 °C||129**8**<br>83||pF|



## **Thermal / Mechanical Characteristics** 

|Thermal Resistance, Junction - Case|RthJC|0.2**2**|°C/W|
|---|---|---|---|
|Weight|WT|2|g|
|Mounting Torque|TM|0.8|Nm|



## J) 

## **GC20MPS12-220** 

## 1200 V SiC MPS™ Diode 

IF = f(VF,Tj); tP = 10 µs 

**Figure 1: Typical Forward Characteristics** 

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IR = f(VR,Tj)<br>**----- End of picture text -----**<br>


**Figure 3: Typical Reverse Characteristics** 

IF = f(VF,Tj); tP = **1** 0 µs **Figure 2: Typical High Current Forward Characteristics** 

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Ptot = f(TC)<br>**----- End of picture text -----**<br>


**Figure 4: Power Derating Curve** 

S 

## **GC20MPS12-220** 

## 1200 V SiC MPS™ Diode 

IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 5: Current Derating Curves(Tj = 206 °C)** 

**Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics** 

Qc = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics** 

EC = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics** 

>. 

## **GC20MPS12-220** 

## 1200 V SiC MPS™ Diode 

Zth,jc = f(tP,D); D = tP/T 

**Figure 9: Transient Thermal Impedance** 

IF = (VF – VBI)/RD **I** FF[(A)] 

## **Built-In Voltage (VBI):** 

VBI(Tj) = m*Tj + **n** (V) m = -1.64e-03, n **=** 1.01 **Differential Resistance (RDIFF):** RDIFF(Tj) = a*Tj2 + b* **T** j[ + c (Ω); ] a = 6.30e-07, b = 1.05e- **0** 4, c = 0.0223 

IF = f(VF, Tj) 

**Figure 10: Forward Curve Model** 

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## **GC20MPS12-220** 

## 1200 V SiC MPS™ Diode 

## **Package Dimensions** 

## **TO-220-2L** 

## **Package Outline** 

## **Recommended Solder Pad Layout** 

- **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMEN **S** ION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLAS **H** , MOLD FLASH, MATERIAL PROTRUSIONS 

1200 V SiC MPS™ Diode 

## **GC20MPS12-220** 

## **RoHS Compliance** 

The levels of RoHS restricted materi **a** ls in this product are below the maximum con **c** entration values (also referred to as the threshold limits) pe **r** mitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65 **/** EC (RoHS), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your **G** eneSiC representative. 

## **REACh Compliance** 

REACh substances of high concern **(** SVHCs) information is available for this product **.** Since the European Chemical Agency (ECHA) has publis **h** ed notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a G **e** neSiC representative to insure you get the most up **-** to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available up **o** n request. 

This product has not been designed or **t** ested for use in, and is not intended for use in, app **l** ications implanted into the human body nor in applications in **w** hich failure of the product could lead to death, per **s** onal injury or property damage, including but not limited to e **q** uipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emerg **e** ncy medical equipment, aircraft navigation or co **m** munication or control systems, or air traffic control systems. 

GeneSiC disclaims all and any warran **t** y and liability arising out of use or application of a **n** y product. No license, express or implied to any intellectual pr **o** perty rights is granted by this document. 

## **Related Links** 

- Soldering Document: http://ww **w** .genesicsemi.com/technical-support/quality / 

- Tin-whisker Report: http://www.genesicsemi.com/technical-support/compliance/  Reliability Report: http://www.g **e** nesicsemi.com/technical-support/reliability/