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GC15MPS12-220
Silicon Carbide Schottky Diode, MPS, Single, 1.2 kV, 82 A, 66 nC, TO-220
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- Manufacturer: GENESIC
- Product type: Silicon Carbide Schottky Diodes
- Product Range:MPS Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:82A; Total Capacitive Charge Qc:66nC; Diode Case Styl
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 2 Pin
- Product Range: MPS
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 82A
- Total Capacitive Charge: 66nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.19 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **TM** ## **Silicon Carbide Schottky Diode** **VRRM = 1200 V IF (TC = 156°C) = 15 A QC = 80 nC** | ## **Features** - Low VF for High Temperature Operation - Enhanced Surge and Avalanche Robustness - Superior Figure of Merit QC/IF - Low Thermal Resistance - Low Reverse Leakage Current - Temperature Independent Fast Switching - Positive Temperature Coefficient of VF - High dV/dt Ruggedness ## **Package** **==> picture [225 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> Case<br>RoHS<br>TO-220-2 K A REACH<br>: Y)<br>**----- End of picture text -----**<br> ## **Advantages** - Improved System Efficiency - High System Reliability - Optimal Price Performance - Reduced Cooling Requirements - Increased System Power Density - Zero Reverse Recovery Current - Easy to Parallel without Thermal Runaway - Enables Extremely Fast Switching ## **Applications** - Power Factor Correction (PFC) - Electric Vehicles and Battery Chargers - Solar Inverters - High Frequency Converters - Switched Mode Power Supply (SMPS) - Motor Drives - Anti-Parallel / Free-Wheeling Diode - LED and HID Lighting ## **Absolute Maximum Ratings** (At TC = 25°C Unless Otherwise Stated) |**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**Note**| |---| |Repetitive Peak Reverse Voltage<br>V<br>1200<br>V<br>RRM| |Continuous Forward Current<br>I<br>T = 100°C, D = 1<br>34<br>A<br>Fig. 4<br>T = 135°C, D = 1<br>23<br>T = 156°C, D = 1<br>15<br>F<br>C<br>C<br>C| |Non-Repetitive Peak Forward Surge Current, Half Sine<br>Wave<br>I<br>T = 25°C, t = 10 ms<br>150<br>A<br>T = 150°C, t = 10 ms<br>120<br>F,SM<br>C<br>P<br>C<br>P| |Repetitive Peak Forward Surge Current, Half Sine Wave<br>I<br>T = 25°C, t = 10 ms<br>90<br>A<br>T = 150°C, t = 10 ms<br>63<br>F,RM<br>C<br>P<br>C<br>P| |Non-Repetitive Peak Forward Surge Current<br>I<br>T = 25°C, t = 10 µs<br>750<br>A<br>F,MAX<br>C<br>P| |i t Value<br>∫i dt<br>T = 25°C, t = 10 ms<br>112<br>A s<br>2<br>2<br>C<br>P<br>2| |Non-Repetitive Avalanche Energy<br>E <br>L = 2.4 mH, I = 15 A<br>270<br>mJ<br>AS<br>AS| |Diode Ruggedness<br>dV/dt<br>V = 0 ~ 960 V<br>200<br>V/ns<br>R| |Power Dissipation<br>P<br>T = 25°C<br>223<br>W<br>Fig. 3<br>TOT<br>C| |Operating and Storage Temperature<br>T , T<br>-55 to 175<br>°C<br>j<br>stg| **Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 1 of 7** **GC15MPS12-220** **TM** ## **1200V 15A SiC Schottky MPS™ Diode** ## **Electrical Characteristics** **==> picture [536 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>I = 15 A, T = 25°C F j 1.5 1.8<br>Diode Forward Voltage V F V Fig. 1<br>I = 15 A, T = 175°C F j 1.9<br>VR = 1200 V, T = 25°C j 2 10<br>Reverse Current IR µA Fig. 2<br>VR = 1200 V, T = 175°C j 17<br>VR = 400 V 55<br>Total Capacitive Charge QC nC Fig. 7<br>I ≤ IF F,MAX VR = 800 V 80<br>dI /dt = 200 A/µs F VR = 400 V<br>Switching Time tS < 10 ns<br>VR = 800 V<br>VR = 1 V, f = 1MHz 914<br>Total Capacitance C pF Fig. 6<br>VR = 800 V, f = 1MHz 53<br>Thermal/Package Characteristics<br>Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>Thermal Resistance, Junction - Case RthJC 0.67 °C/W Fig. 9<br>Weight WT 2.0 g<br>Mounting Torque TM Screws to Heatsink 1.0 Nm<br>**----- End of picture text -----**<br> ## **Thermal/Package Characteristics** **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 2 of 7** **Rev 21/Jul** **GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **TM** **Figure 1: Typical Forward Characteristics** IF = f(VF,T); tj P = 250 µs **Figure 3: Power Derating Curves** **==> picture [97 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> PTOT = f(TC); T = 175°C j<br>**----- End of picture text -----**<br> **Figure 2: Typical Reverse Characteristics** **==> picture [46 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IR = f(VR,T)j<br>**----- End of picture text -----**<br> **Figure 4: Current Derating Curves (Typical VF)** **==> picture [169 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br> **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 3 of 7** **Rev 21/Jul** **GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> **==> picture [225 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5: Current Derating Curves (Maximum VF)<br>**----- End of picture text -----**<br> IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz **Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics** **==> picture [83 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics** **==> picture [78 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics** **==> picture [82 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 4 of 7** **Rev 21/Jul** **GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> **Figure 9: Transient Thermal Impedance** **==> picture [89 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Zth,jc = f(tP,D); D = tP/T<br>**----- End of picture text -----**<br> **Figure 10: Forward Curve Model** ## **Forward Curve Model Equation:** IF = (VF - VBI)/RDIFF (A) Cn **Built-In Voltage (VBI):** VBI(T) = j m × T + j n (V) m = -0.00123 (V/°C) n = 0.995 (V) **Differential Resistance (RDIFF):** **==> picture [90 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> 1/RDIFF<br>ee<br>VBI<br>Forward<br>IF = f(VF,T)j<br>**----- End of picture text -----**<br> - RDIFF(T) = j a × Tj[2] + b × T + j c (Ω) a = 7.95e-07 (Ω/°C2) b = 0.000113 (Ω/°C) c = 0.0334 (Ω) **Forward Power Loss Equation:** PLOSS = VBI(T) × Ij AVG + RDIFF(T) × Ij RMS[2] **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 5 of 7** **Rev 21/Jul** **GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Package Dimensions** **==> picture [536 x 459] intentionally omitted <==** **----- Start of picture text -----**<br> C TO-220-2 Package Outline Y<br>0.167(4.24)<br>a 0.102 0.118 (3.00)(2.60) a 0.392 0.408 (10.36)(9.96) Ø 0.148 0.155 (3.930) a (3.750) 0.183(4.64)<br>0.045(1.15)<br>0.055(1.40)<br>0.254<br>ay, (6.45)<br>0.579 0.501<br>0.630 (12.73)<br>(14.70)<br>(16.00)<br>7 ies 0.347 =<br>0.355<br>(8.82)<br>(9.02)<br>0.306 (7.77)<br>|<br>0.047(1.20) 0.157(4.00)<br>0.067(1.70) MAX.<br>0.027(0.70) 0.091 (2.30) 0.530(13.47)<br>0.035(0.90) 0.106 (2.70) 0.550(13.97)<br>0.016(0.40)<br>0.100 BSC. 0.237(0.60)<br>(2.540) BSC.<br>Se =D Recommended Solder Pad Layout Package View<br>Case (K)<br>0.12 (3.1)<br>0.20 (5.1)<br>0.05 (1.3)<br>K A<br>**----- End of picture text -----**<br> ## **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. **Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220.pdf** **Page 6 of 7** **Rev 21/Jul** **GC15MPS12-220 1200V 15A SiC Schottky MPS™ Diode** **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Compliance** ## **RoHS Compliance** The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. ## **REACH Compliance** REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. ## **Disclaimer** GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. ## **Related Links** - SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220_SPICE.zip - PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220_PLECS.zip - CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GC15MPS12-220/GC15MPS12-220_3D.zip - Evaluation Boards: https://www.genesicsemi.com/technical-support - Reliability: https://www.genesicsemi.com/reliability - Compliance: https://www.genesicsemi.com/compliance - Quality Manual: https://www.genesicsemi.com/quality ## **Revision History** - Rev 21/Jul: Updated with most recent test data - Supersedes: Rev 19/Apr, Rev 20/Apr, Rev 20/Aug **==> picture [86 x 86] intentionally omitted <==** ## **www.genesicsemi.com/sic-schottky-mps/** **==> picture [90 x 78] intentionally omitted <==** **Rev 21/Jul Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved.** **Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7**
Updated at April 22, 2026
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