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GC08MPS12-220
Silicon Carbide Schottky Diode, MPS, Single, 1.2 kV, 43 A, 33 nC, TO-220
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- Manufacturer: GENESIC
- Product type: Silicon Carbide Schottky Diodes
- Product Range:MPS Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:43A; Total Capa; Available until stocks are exhausted
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 2 Pin
- Product Range: MPS
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 43A
- Total Capacitive Charge: 33nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 3.13 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **TM** ## Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC = 135°C) = 12 A | QC = 40 nC ## Features - Low VF for High Temperature Operation - Enhanced Surge and Avalanche Robustness - Superior Figure of Merit QC/IF - Low Thermal Resistance - Low Reverse Leakage Current - Temperature Independent Fast Switching - Positive Temperature Coefficient of VF - High dV/dt Ruggedness **==> picture [253 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> Package<br>Case<br>RoHS<br>TO-220-2 K A REACH<br>: Y)<br>**----- End of picture text -----**<br> ## Advantages - Improved System Efficiency - High System Reliability - Optimal Price Performance - Reduced Cooling Requirements - Increased System Power Density - Zero Reverse Recovery Current - Easy to Parallel without Thermal Runaway - Enables Extremely Fast Switching ## Applications - Power Factor Correction (PFC) - Solar Inverters - Battery Chargers - High Frequency Converters - Switched Mode Power Supply (SMPS) - AC/DC Power Supplies - Anti-Parallel / Free-Wheeling Diode - LED and HID Lighting ## Absolute Maximum Ratings (At Tc = 25°C Unless Otherwise Stated) |**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**Note**| |---| |Repetitive Peak Reverse Voltage<br>V<br>1200<br>V<br>RRM| |Continuous Forward Current<br>I <br>T = 100°C, D = 1<br>17<br>A<br>Fig. 4<br>T = 135°C, D = 1<br>12<br>T = 156°C, D = 1<br>7.5<br>F<br>C<br>C<br>C| |Non-Repetitive Peak Forward Surge Current, Half Sine<br>Wave<br>I<br>T = 25°C, t = 10 ms<br>75<br>A<br>T = 150°C, t = 10 ms<br>60<br>F,SM<br>C<br>P<br>C<br>P| |Repetitive Peak Forward Surge Current, Half Sine Wave<br>I<br>T = 25°C, t = 10 ms<br>45<br>A<br>T = 150°C, t = 10 ms<br>32<br>F,RM<br>C<br>P<br>C<br>P| |Non-Repetitive Peak Forward Surge Current<br>I<br>T = 25°C, t = 10 µs<br>375<br>A<br>F,MAX<br>C<br>P| |i t Value<br>∫i dt<br>T = 25°C, t = 10 ms<br>28<br>A s<br>2<br>2<br>C<br>P<br>2| |Non-Repetitive Avalanche Energy<br>E <br>L = 4.8 mH, I = 7.5 A<br>135<br>mJ<br>AS<br>AS| |Diode Ruggedness<br>dV/dt<br>V = 0 ~ 960 V<br>200<br>V/ns<br>R| |Power Dissipation<br>P<br>T = 25°C<br>116<br>W<br>Fig. 3<br>TOT<br>C| |Operating and Storage Temperature<br>T , T<br>-55 to 175<br>°C<br>j<br>stg| www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 1 of 7 Apr. 20 Rev 1.4 **TM** ## GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode ## Electrical Characteristics **==> picture [536 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>IF = 7.5 A, T = 25°C j 1.5 1.8<br>Diode Forward Voltage VF V Fig. 1<br>IF = 7.5 A, T = 175°C j 1.9<br>VR = 1200 V, T = 25°C j 1 5<br>Reverse Current IR µA Fig. 2<br>VR = 1200 V, T = 175°C j 9<br>VR = 400 V 28<br>Total Capacitive Charge QC nC Fig. 7<br>IF ≤ IF,MAX VR = 800 V 40<br>dIF/dt = 200 A/µs VR = 400 V<br>Switching Time tS < 10 ns<br>VR = 800 V<br>VR = 1 V, f = 1MHz 457<br>Total Capacitance C pF Fig. 6<br>VR = 800 V, f = 1MHz 27<br>**----- End of picture text -----**<br> ## Thermal/Package Characteristics **==> picture [536 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> Values<br>Parameter Symbol Conditions Unit Note<br>Min. Typ. Max.<br>Thermal Resistance, Junction - Case RthJC 1.29 °C/W Fig. 9<br>Weight WT 2.0 g<br>Mounting Torque TM Screws to Heatsink 1.0 Nm<br>**----- End of picture text -----**<br> **==> picture [60 x 46] intentionally omitted <==** www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 2 of 7 Apr. 20 Rev 1.4 GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **TM** Figure 1: Typical Forward Characteristics **==> picture [95 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IF = f(VF,T ); tj P = 250 µs<br>**----- End of picture text -----**<br> Figure 3: Power Derating Curves **==> picture [97 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> PTOT = f(TC); T = 175°C j<br>**----- End of picture text -----**<br> Figure 2: Typical Reverse Characteristics ## IR = f(VR,T )j Figure 4: Current Derating Curves (Typical VF) **==> picture [173 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br> www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 3 of 7 Apr. 20 Rev 1.4 GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> Figure 5: Current Derating Curves (Maximum VF) ## IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics **==> picture [83 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics **==> picture [79 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics **==> picture [82 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br> www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 4 of 7 Apr. 20 Rev 1.4 GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **==> picture [5 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> Figure 9: Transient Thermal Impedance Zth,jc = f(tP,D); D = tP/T Figure 10: Forward Curve Model ## Forward Curve Model Equation: IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(T ) = j m × T + j n (V) m = -0.00123 (V/°C) n = 0.995 (V) **==> picture [89 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> \ ! 1/RDIFF \<br>nn es ae<br>VBI<br>Forward<br>IF = f(VF,T )j<br>**----- End of picture text -----**<br> Differential Resistance (RDIFF ## ): - RDIFF(T ) = j a × Tj[2] + b × T + j c (Ω) a = 1.59e-06 (Ω/°C2) b = 0.000226 (Ω/°C) c = 0.0669 (Ω) ## Forward Power Loss Equation: PLOSS = VBI(T ) × Ij AVG + RDIFF(T ) × Ij RMS[2] www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 5 of 7 Apr. 20 Rev 1.4 GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **TM** ## Package Dimensions **==> picture [536 x 354] intentionally omitted <==** **----- Start of picture text -----**<br> o TO-220-2 Package Outline T<br>0.167(4.24)<br>0.102 (2.60) 0.392 (9.96) Ø 0.148 (3.750) 0.183(4.64)<br>0.118 (3.00) 0.408 (10.36) 0.155 (3.930)<br>0.045(1.15)<br>0.055(1.40)<br>0.254<br>aS A (6.45)<br>0.579 0.501<br>0.630 (12.73)<br>(14.70)<br>(16.00)<br>0.347<br>0.355<br>(8.82)<br>(9.02)<br>0.306 (7.77)<br>0.047(1.20) 0.157(4.00)<br>0.067(1.70) MAX.<br>0.027(0.70) 0.091 (2.30) 0.530(13.47)<br>0.035(0.90) 0.106 (2.70) 0.550(13.97)<br>0.016(0.40)<br>= 0.100 BSC. 0.237(0.60) ! il<br>(2.540) BSC. TPR T T<br>SS Recommended Solder Pad Layout Package View<br>**----- End of picture text -----**<br> **==> picture [372 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> Case (K)<br>0.12 (3.1)<br>0.20 (5.1)<br>0.05 (1.3)<br>K A<br>**----- End of picture text -----**<br> ## NOTE 1. CONTROLLED DEIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220.pdf Page 6 of 7 Apr. 20 Rev 1.4 GC08MPS12-220 1200V 7.5A SiC Schottky MPS™ Diode **TM** ## RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. ## REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. ## Related Links - SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220_SPICE.zip - PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220_PLECS.zip - CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GC08MPS12-220/GC08MPS12-220_3D.zip - Evaluation Boards: https://www.genesicsemi.com/technical-support - Reliability: https://www.genesicsemi.com/reliability - Compliance: https://www.genesicsemi.com/compliance - Quality Manual: https://www.genesicsemi.com/quality ## www.genesicsemi.com/sic-schottky-mps/ **==> picture [86 x 86] intentionally omitted <==** **==> picture [90 x 78] intentionally omitted <==** **Apr. 20 Rev 1.4 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. The information in this document is subject to change without notice.** **Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7**
Updated at April 22, 2026
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