GBUE2560-M3/P

**GBUE2560** 

www.vishay.com 

Vishay General Semiconductor 

## **Low VF Single-Phase Single In-Line Bridge Rectifier** 

## **FEATURES** 

- UL recognition file number E312394 

- Oxide planar chip junction 

- Low forward voltage drop 

- Solder dip 275 °C max. 10 s, per JESD 22-B106 

- Ideal for printed circuit boards 

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+<br>~<br>~ -        ~        ~        +<br>- Case Style GBU<br>      Case Style GBU<br>**----- End of picture text -----**<br>


- High surge current capability 

- High case dielectric strength of 1500 VRMS 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

## **LINKS TO ADDITIONAL RESOURCES** 

~~Bs~~ 3D Models 

General purpose use in AC/DC bridge full wave rectification for switching power supply, home applications, and white-goods applications specially or telecom power supply, high efficiency desktop PC and server SMPS. 

## **MECHANICAL DATA** 

## **Case:** GBU 

## **PRIMARY CHARACTERISTICS** 

|IF(AV)|25 A|
|---|---|
|VRRM|600 V|
|IFSM|350 A|
|VFat IF= 12.5 A (125 °C)|0.75 V|
|TJmax.|175 °C|
|Package<br>Circuit configuration|GBU<br>In-line|



Molding compound meets UL 94 V-0 flammability rating 

Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD22-B102 

M3 suffix meet JESD 201 class 1A whisker test 

**Polarity:** as marked on body 

**Mounting Torque:** 10 cm-kg (8.8 inches-lbs) max. 

**Recommended Torque:** 5.7 cm-kg (5 inches-lbs) 

|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**GBUE2560**|**UNIT**|
|Device markingcode||GBUE2560||
|Maximum repetitive peak reverse voltage|VRRM|600|V|
|Maximum RMS voltage|VRMS|420|V|
|Maximum DC blockingvoltage|VDC|600|V|
|Maximum average forward rectified output current at<br>TC= 140 °C<br>TA= 25 °C|IO (1)|25|A|
||IO (2)|4.9||
|Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ= 25 °C|IFSM|350|A|
|Ratingfor fusing(t < 8.3 ms)|I2t|508|A2s|
|Operatingjunction and storage temperature range|TJ, TSTG|-55 to +175|°C|



## **Notes** 

> (1) Unit case mounted on aIuminum plate heatsink 

- (2) Units mounted on PCB without heatsink 

Revision: 27-Nov-2023 

Document Number: 87633 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**GBUE2560** 

## www.vishay.com 

## Vishay General Semiconductor 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 °C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**ELECTRICAL CHARACTERISTICS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum instantaneous forward voltage drop<br>per diode|IF= 12.5 A|TA= 25 °C|VF (1)|0.88|0.92|V|
|||TA= 125 °C||0.75|-||
|Maximum DC reverse current at rated DC<br>blocking voltage per diode|VR= 600 V|TA= 25 °C|IR (2)|0.1|10|μA|
|||TA= 125 °C||27|-||
|Typical reverse recovery time|IF= 0.5 A, IR=1.0 A, Irr= 0.25 A||trr|280|-|ns|
|Typical junction capacitance per diode|4.0 V, 1 MHz||CJ|240|-|pF|



## **Notes** 

- (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

- (2) Pulse test: pulse width ≤ 40 ms 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**GBUE2560**|**UNIT**|
|Typical thermal resistance|RθJA (1)|23|°C/W|
||RθJC (2)|1.2||



## **Notes** 

- (1) Without heatsink, free air 

- (2) With heatsink 

## **ORDERING INFORMATION** 

|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|---|---|---|---|---|
|GBUE2560-M3/P|3.83|P|20|Tube|



## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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30<br>25 CCECEEE<br>20 T C measured at device bottom<br>coy<br>15<br>10<br>50 a<br>0 25 50 75 100 125 150 175<br>Case Temperature (°C)<br>Fig. 1 - Derating Curve Output Rectified Current<br>Average Forward Output Current (A)<br>**----- End of picture text -----**<br>


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14.0<br>D = 0.8<br>12.0 oo D = 0.5<br>D = 0.3<br>10.0<br>D = 0.2<br>8.0 Oy D = 0.1 D = 1.0<br>6.0<br>4.0 T<br>2.0<br>D = tp/T tp<br>0.0 AA<br>0 2 4 6 8 10 12 14<br>Average Forward Current (A)<br>Fig. 2 - Forward Power Loss Characteristics Per Diode<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


Revision: 27-Nov-2023 

Document Number: 87633 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**GBUE2560** 

Vishay General Semiconductor 

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www.vishay.com<br>**----- End of picture text -----**<br>


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100<br>TJ = 175 °C<br>10 TJ = 125 ° C<br>T J = 100 °C<br>1<br>TJ = 75 °C<br>0.1 T J = 25 °C<br>T J = -40 °C<br>0.01<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br>


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Instantaneous Forward Voltage (V)<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Forward Characteristics Per Diode 

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1000<br>TJ = 175 °C<br>100<br>TJ = 125 °C<br>10<br>T J  = 100 °C<br>1 TJ = 75 °C<br>0.1 TJ = 25 °C<br>0.01<br>TJ = -40 °C<br>0.001<br>10 20 30 40 50 60 70 80 90 100<br>Percent of Rated Peak Reverse Voltage (%)<br>A)<br>�<br>Instantaneous Reverse Current (<br>**----- End of picture text -----**<br>


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Fig. 4 - Typical Reverse Leakage Characteristics Per Diode<br>**----- End of picture text -----**<br>


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100<br>Junction to Ambient<br>10<br>1<br>0.1<br>0.01 0.1 1 10 100 1000<br>t - Pulse Duration (s)<br>C/W)<br>°<br>Transient Thermal Impedance (<br>**----- End of picture text -----**<br>


Fig. 6 - Typical Transient Thermal Impedance Per Diode 

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400<br>8.3 ms single half sine-wave<br>300<br>200<br>100<br>0<br>1 10 100<br>Number of Cycles at 60 Hz<br>Fig. 7 - Peak Forward Surge Current<br>Peak Forward Surge Current (A)<br>**----- End of picture text -----**<br>


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1000<br>TJ = 25 °C<br>f = 1.0 MHz<br>Vsig = 50 mVp-p<br>100<br>10<br>1<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Junction Capacitance Per Diode 

Revision: 27-Nov-2023 

Document Number: 87633 

**3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**GBUE2560** 

Vishay General Semiconductor 

www.vishay.com 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

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GBU<br>0.880 (22.3) 0.140 (3.56)<br>0.130 (3.30)<br>0.860 (21.8)<br>0.020 R (TYP.)<br>0.125 (3.2) x 45°<br>Chamfer 9° TYP.<br>0.310 (7.9)<br>0.290 (7.4) 0.160 (4.1)<br>0.140 (3.5) 0.740 (18.8)<br>0.720 (18.3)<br>0.065 (1.65)0.085 (2.16) (1.9) R0.075. 0.060 (1.52)0.080 (2.03)<br>5° TYP.<br>0.085 (2.16)<br>0.710 (18.0) 0.075 (1.90)<br>0.100 (2.54) 0.050 (1.27) 0.690 (17.5)<br>0.085 (2.16) 0.040 (1.02)<br>0.026 (0.66)<br>0.080 (2.03) 0.190 (4.83) 0.020 (0.51)<br>0.065 (1.65) 0.210 (5.33)<br>Polarity shown on front side of case, positive lead by beveled corner<br>**----- End of picture text -----**<br>


Revision: 27-Nov-2023 

Document Number: 87633 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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## **Disclaimer** 

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Revision: 01-Jan-2023 

Document Number: 91000 

**1**