GBL10E-E3/A

**GBL005E, GBL01E, GBL02E, GBL04E, GBL06E, GBL08E, GBL10E** 

www.vishay.com 

Vishay General Semiconductor 

## **Glass Passivated Single-Phase Bridge Rectifier** 

## **FEATURES** 

- UL recognition file number E54214 

- Enhanced thermal capability 

- High surge current capability 

- Typical reverse leakage current less than 0.1 μA 

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~ ~<br>Case Type GBL<br>**----- End of picture text -----**<br>


## **LINKS TO ADDITIONAL RESOURCES** 

> 3D Models ~~eS~~ 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|4 A|
|VRRM|50 V, 100 V, 200 V, 400 V, 600 V,<br>800 V, 1000 V|
|IFSM|150 A|
|IR|5 μA|
|VFat IF= 4.0 A|1.0 V|
|TJmax.|150 °C|
|Package|GBL|
|Circuit configuration|In-line|



- High case dielectric strength 

- Solder dip 275 °C max. 10 s, per JESD 22-B106 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, SMPS, adapter, audio equipment, and home appliances application. 

## **MECHANICAL DATA** 

## **Case:** GBL 

Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

E3 suffix meets JESD 201 class 1A whisker test 

**Polarity:** as marked on body 

~~Cn~~ **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) ~~a~~ **PARAMETER SYMBOL GBL005E GBL01E GBL02E GBL04E GBL06E GBL08E GBL10E UNIT** ~~a~~ Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V ~~a~~ Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V ~~a~~ Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified output current at TA = 25 °C IF(AV) 2.6 4.0[ (1)][(2)] A ~~ee~~ Peak forward surge current single sine-wave superimposed on rated load IFSM 150 A ~~a~~ Rating for fusing (t < 8.3 ms) ~~ee~~ I[2] t 93 A[2] s ~~a~~ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C 

**Note** 

> (1) Unit mounted on 3.0" x 3.0" x 0.11" thick (7.5 cm x 7.5 cm x 0.3 cm) aluminum plate 

> (2) Free air, mounted on recommended copper pad area 

|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS** (TJ= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST**<br>**CONDITIONS**|**SYMBOL GBL005E**|**SYMBOL GBL005E **|**GBL01E **|**GBL02E **|**GBL04E **|**GBL06E **|**GBL08E **|**GBL10E**|**UNIT**|
|Maximum instantaneous<br>forward voltage drop per diode|4.0 A|VF|1.0|||||||V|
|Maximum DC reverse current<br>at rated DC blocking voltage<br>per diode|TJ= 25 °C|IR|5.0|||||||μA|
||TJ= 125 °C||500||||||||
|Typical junction capacitance<br>per diode|4.0 V, 1 MHz|CJ|50|||||||pF|



Revision: 26-Oct-2023 

**1** 

Document Number: 98472 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**GBL005E, GBL01E, GBL02E, GBL04E, GBL06E, GBL08E, GBL10E** ~~a——~~ www.vishay.com 

Vishay General Semiconductor 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**GBL005E**|**GBL01E**|**GBL02E**|**GBL04E**|**GBL06E**|**GBL08E**|**GBL10E**|**UNIT**|
|Typical thermal resistance|RθJA|28(1)(2)|||||||°C/W|
||RθJM|2.2(3)||||||||



## **Notes** 

> (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/RθJA 

> (2) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint 

- (3) Thermal resistance junction-to-mount to follow JEDEC® 51-14 transient dual interface test method (TDIM) 

## **ORDERING INFORMATION** (Example) 

|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|---|---|---|---|---|
|GBL06E-E3/P|2.31|P|20|Tube|
|GBL06E-E3/A|2.31|A|400|Paper tray|



## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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5<br>RthJM = 2.2 °C/W<br>4<br>3<br>RthJA = 28 °C/W<br>2<br>1<br>0<br>0 25 50 75 100 125 150<br>Mount  Temperature (°C)<br>Fig. 1 - Derating Curves Output Rectified CurrentDerating Curves Output Rectified Current<br>Axis Title<br>150<br>TJ=TJ max.<br>Single Sine-Wave<br>100 aS SU<br>50 TTT SOSN<br>wn il<br>0<br>1 10 100<br>Number of Cycles at 60 Hz<br>Average Forward Rectified Current (A)<br>Peak Forward Surge Current (A)<br>**----- End of picture text -----**<br>


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Fig. 1 - Derating Curves Output Rectified CurrentDerating Curves Output Rectified Current<br>**----- End of picture text -----**<br>


Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 

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4.0 10000<br>reYAes i<br>3.0 a D = 0.3 74<br>D = 1.0<br>ofee 7) ff [A] 1000<br>D = 0.2<br>D = 0.8<br>2.0<br>D = 0.5<br>D = 0.1 iY —<br>/ 100<br>1.0 /A T<br>aA<br>0 >AA D = t p /T t p 10<br>0 1 2 3 4 5<br>Average Forward Current (A)<br>Fig. 3 - Forward Power Loss Characteristics<br>Per Diode<br>Axis Title<br>10000<br>TJ = 150  ° C<br>10<br>TJ = 125 °C 1000<br>Wf f+<br>TJ = 85 °C<br>1 |e/aA > <n 100<br>T J = 25  ° C<br>FA-— —<br>TJ = -40 °C<br>0.1 [/ [Li}] 10<br>0.4 0.6 0.8 1.0 1.2 1.4<br>Instantaneous Forward Voltage (V)<br>Average Power Loss (W)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Forward Voltage Characteristics Per Diode 

**2** 

Revision: 26-Oct-2023 

Document Number: 98472 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **GBL005E, GBL01E, GBL02E, GBL04E, GBL06E, GBL08E, GBL10E** 

www.vishay.com 

## Vishay General Semiconductor 

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10000 1000 10000<br>100 TJ = 150 °C Tf =J  1.0 MHz= 25 °C<br>10 Vsig = 50 mVp-p<br>TJ = 125 °C<br>1000 100 1000<br>1<br>T J = 85 °C<br>0.1<br>0.01 TJ = 25 °C 100 10 100<br>0.001<br>TJ = -40 °C<br>0.0001 10 1 10<br>10 20 30 40 50 60 70 80 90 100 0.1 1 10 100<br>Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V)<br>1st line 2nd line 2nd line<br>Junction Capacitance (pF)<br>Instantaneous Reverse Current (µA)<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Reverse Characteristics Per Diode 

Fig. 6 - Typical Junction Capacitance Per Diode 

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100 10000<br>Junction to ambient<br>10 1000<br>1 100<br>0.1 10<br>0.001 0.01 0.1 1 10 100<br>tp - Pulse Duration (s)<br>Fig. 7 - Typical Transient Thermal Impedance<br>Per Diode<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


Revision: 26-Oct-2023 

Document Number: 98472 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **GBL005E, GBL01E, GBL02E, GBL04E, GBL06E, GBL08E, GBL10E** 

www.vishay.com 

## Vishay General Semiconductor 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

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0.827 (21.0)<br>0.811 (20.6)<br>0.118 (3.0) x 45°<br>chamfer<br>0.425 (10.8)<br>0.094 (2.4) 0.409 (10.4)<br>0.051 (1.3)<br>~ ~<br>+<br>0.098 (2.5)<br>0.087 (2.2)<br>0.075 (1.9)<br>0.071 (1.8)<br>0.724 (18.4)<br>0.098 (2.5) 0.681 (17.3)<br>0.075 (1.9)<br>0.050 (1.27)<br>0.040 (1.02)<br>0.209 (5.3)<br>0.189 (4.8)<br>0.142 (3.6)<br>0.047 (1.2) 0.126 (3.2)<br>0.031 (0.8)<br>0.024 (0.6)<br>0.012 (0.3)<br>**----- End of picture text -----**<br>


Revision: 26-Oct-2023 

Document Number: 98472 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jan-2023 

Document Number: 91000 

**1**