GBJ1001-F

## **GBJ10005 - GBJ1010** 

## **10A GLASS PASSIVATED BRIDGE RECTIFIER** 

## **Features** 

Glass Passivated Die Construction **GBJ** . _SOtS~S ; High Case Dielectric Strength of 1500VRMS T_T. **Dim Min Max** ~~:~~ Low Reverse Leakage Current **A** 29.70 30.30 ~~:~~ Surge Overload Rating to 170A Peak **B** 19.70 20.30 Tf Ideal for Printed Circuit Board Applications L **C** 17.00 18.00 ~~:~~ UL Listed Under Recognized Component Index, File Number E94661 K ~~A~~ M **D** 3.80 4.20 ~~;~~ **Lead Free Finish/RoHS Compliant (Note 4) E** 7.30 7.70 **G** 9.80 10.20 B S N **H** 2.00 2.40 ~~_~~ re SO **Mechanical Data** ~~Ss~~ Fe ~~oer~~ J P **I** 0.90 1.10 Case: GBJ D **J** 2.30 2.70 H C Case Material:  Molded Plastic - UL Flammability R **K** 3.0 X 45 Classification Rating 94V-0 I **L** 4.40 4.80 Moisture Sensitivity:  Level 1 per J-STD-020C ml ee **M** 3.40 3.80 ° Terminals:  Plated Leads, Solderable per MIL-STD-202, Method 208 O **e3** ~~i~~ G E E ~~4~~ **N** 3.10 3.40 . Lead Free Plating (Tin Finish). rf **P** 2.50 2.90 : Polarity: Molded on Body rf **R** 0.60 0.80 ; Mounting: Through Hole for #6 Screw Tf **S** 10.80 11.20 Mounting Torque: 5.0 in-lbs Maximum **All Dimensions in mm** t~‘“‘C;C;~* | Marking: Type Number Weight: 6.6 grams (approximate) 

## **Maximum Ratings and Electrical Characteristics** 

@ TA = 25 C unless otherwise specified 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>ee|**GBJ**<br>**10005**<br>~~ee~~<br>ee<br>ee|**GBJ**<br>**1001**<br>~~ee~~<br>eeee<br>ee|**GBJ**<br>**1002**<br>~~ee~~<br>ee<br>eeee|**GBJ**<br>**1004**<br>~~ee~~<br>ee<br>ee|**GBJ**<br>**1006**<br>~~ee~~<br>ee|**GBJ**<br>**1008**<br>~~ee~~<br>ee|**GBJ**<br>**1010**<br>~~ee~~<br>ee|**Unit**<br>~~ee~~<br>ee|
|---|---|---|---|---|---|---|---|---|---|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>~~ee~~<br>~~ee~~|VRRM<br>VRWM<br>VR<br>~~ee~~<br>ee <br>~~ee~~|50<br>~~ee~~<br> ee<br>~~ee~~<br>ee|100<br>~~ee~~<br>ee ee<br>~~ee~~<br>ee|200<br>~~ee~~<br>ee<br>~~ee~~<br>eeee<br>OO|400<br>~~ee~~<br>ee <br>~~ee~~<br>ee<br>OO|600<br>~~ee~~<br> ee <br>~~ee~~<br>OO|800<br>~~ee~~<br> ee<br>~~ee~~|1000<br>~~ee~~<br>ee<br>~~ee~~|V<br>~~ee~~<br>ee<br>~~ee~~|
|RMS Reverse Voltage<br>~~OO~~|VR(RMS)<br>~~OO~~<br>etGe|35<br>ee<br>~~OO~~<br>Ge|70<br>ee<br>~~OO~~<br>Ge|140<br>ee ee<br>~~OO~~<br>OO<br>Ge|280<br>ee<br>~~OO~~<br>OO<br>Ge|420<br>~~OO~~<br>OO|560<br>~~OO~~|700<br>~~OO~~|V<br>~~OO~~|
|Average Forward Rectified Output Current<br>@ TC= 110 C<br>~~rs~~<br>~~a~~|IO<br>~~rs~~<br>etGe<br>i~~Ge~~|10<br>OO<br>~~rs~~<br>Ge<br>~~Ge~~|||||||A<br>~~rs~~|
|Non-Repetitive Peak Forward Surge Current, 8.3 ms single<br>half-sine-wave superimposed on rated load<br>~~re~~<br>~~a~~|IFSM<br>et Ge<br>~~re~~<br>i~~Ge~~|170<br>Ge<br>~~re~~<br>~~Ge~~|||||||A<br>~~re~~|
|Forward Voltage per element<br>@ IF= 5.0A<br>~~a~~|VFM<br>i~~Ge~~<br>ed|1.05<br>~~Ge~~|||||||V|
|Peak Reverse Current<br>@TC=   25 C<br>at Rated DC Blocking Voltage<br>@ TC= 125 C<br>~~es~~|IR<br>~~es~~<br>ed|10<br>500<br>~~es~~|||||||A<br>~~es~~|
|I2t Rating for Fusing (t < 8.3ms) (Note 1)<br>~~EO~~|I2t<br>ed<br>~~EO~~|120<br>~~EO~~|||||||A2s<br>~~EO~~|
|Typical Total Capacitance per Element (Note 2)<br>~~EG~~|CT<br>~~EG~~|55<br>~~EG~~|||||||pF<br>~~EG~~|
|Typical Thermal Resistance, Junction to Case (Note 3)<br>~~EG~~|R JC<br>~~EG~~|1.4<br>~~EG~~|||||||°C/W<br>~~EG~~|
|Operating and Storage Temperature Range<br>~~a~~|Tj, TSTG<br>~~a~~|-65 to +150<br>~~a~~|||||||C<br>~~a~~|



Notes:     1.   Non-repetitive, for t > 1.0ms and < 8.3ms. 

2.    Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 

3.   Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. 

4. RoHS revision 13.2.2003.  Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. 

DS21218 Rev. 7 - 2 

GBJ10005-GBJ1010 

1 of 3 **www.diodes.com** 

Diodes Incorporated 

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**----- Start of picture text -----**<br>
12 10 ————SS<br>=<br>10<br>with heatsink<br>8 TJ = 25°C<br>1.0<br>A oO<br>6 A<br>4 Pie TT te TT TY] | 0.1 SSS ESS<br>without heatsink<br>2 N\A a |<br>Resistive or N ee T<br>Inductive load Pulse width = 300us<br>0<br>| N 0.01 Pt ttl<br>25 50 75 100 125 150<br>0 0.4 0.8 1.2 1.6 1.8<br>TC, CASE TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics (per element)<br>180 Single half-sine-wave 100 a ee Tf = 1MHzjf = 1MHzjj = 25°C°CC I<br>160 Ti ee<br>TJ = 150°C<br>ee ||| aeeee a |ii<br>120 NT ee |TlTl<br>NIE | IER<br>10<br>80 |LN| | LENBNI allmat FeeapTaapTapTaa  CTee CT TTee CT TT CT TT TT nileeEEeeEEEE<br>40 COIS ese<br>— Ps ee |<br>0 ee 1 LEE EET<br>1 10 100 1 10 100<br>NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)R, REVERSE VOLTAGE (V), REVERSE VOLTAGE (V)<br>Fig. 3 Maximum Non-Repetitive Surge Current Fig. 4 Typical Total Capacitance, Per Element<br>, AVERAGE RECTIFIED CURRENT (A)<br>I<br>, PEAK FORWARD SURGE CURRENT (A)<br>I<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>I<br>, TOTAL CAPACITANCE (pF)<br>CT<br>O<br>FSM<br>F<br>T<br>**----- End of picture text -----**<br>


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100<br>a ee Tf = 1MHzjf = 1MHzjj = 25°C°CC I<br>ee<br>aeeee a |ii<br>ee |TlTl<br>IER<br>10<br>FeeapTaapTapTaa  CTee CT TTee CT TT CT TT TT nileeEEeeEEEE<br>ese<br>ee |<br>1 LEE EET<br>1 10 100<br>VR, REVERSE VOLTAGE (V)R, REVERSE VOLTAGE (V), REVERSE VOLTAGE (V)<br>Fig. 4 Typical Total Capacitance, Per Element<br>, TOTAL CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


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< 1000 _——<br>TJ = 150°C<br>5 e e<br>i ——__|<br>2 100 LE TJ = 125°C ere<br>a) |  e e<br>lw eSeS TJ = 100 ES °C SgA ae |<br>= 10 Lo ff | | tt<br>a _—— a<br>op) eS SS<br>> a es|<br>o ae<br><xZ 1.0 esEes ee eseee ee ay Ae<br>E eS SS |<br>Zz TJ = 25°C = eee ee eee eee<br>~« 0.1 L~ElTt{ft | [ | |<br>0 20 40 60 80 100 120 140<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>Fig. 5 Typical Reverse Characteristics<br>**----- End of picture text -----**<br>


DS21218 Rev. 7 - 2 

GBJ10005-GBJ1010 

2 of 3 

**www.diodes.com** 

## **Ordering Information**[(Note 5)] 

|**Ordering Information** [(Note 5)]|||
|---|---|---|
|**Device**|**Packaging**|**Shipping**|
|GBJ10005-F|GBJ|15/Tube|
|GBJ1001-F|GBJ|15/Tube|
|GBJ1002-F|GBJ|15/Tube|
|GBJ1004-F|GBJ|15/Tube|
|GBJ1006-F|GBJ|15/Tube|
|GBJ1008-F|GBJ|15/Tube|
|GBJ1010-F|GBJ|15/Tube|



Notes:     5.   For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. 

## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages. 

## LIFE SUPPORT 

DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe PresidentofDiodesIncorporated. 

DS21218 Rev. 7 - 2 

GBJ10005-GBJ1010 

3 of 3 **www.diodes.com**