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GB10SLT12-220
Silicon Carbide Schottky Diode, Silicon, 1200V, Single, 1.2 kV, 10 A, 37 nC, TO-220AC
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- Manufacturer: GENESIC SEMICONDUCTOR
- Product type: Silicon Carbide Schottky Diodes
- No. of Pins: 2 Pin
- Product Range: 1200V
- Diode Mounting: Through Hole
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Average Forward Current: 10A
- Total Capacitive Charge: 37nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.839 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **GB10SLT12-220** ~~@cereSiC—idY~~ **Silicon Carbide Power VRRMRRM = 1200 V Schottky Diode IF (Tc = 25°C)F (Tc = 25°C) = 25 A** **VRRMRRM = 1200 V IF (Tc = 25°C)F (Tc = 25°C) = 25 A IF (Tc** ≤ **150°C) = 10 A QC = 31 nC** ~~oe~~ ## **Features** ## **Package** RoHS Compliant - Industry’s leading low leakage currents - 175 °C maximum operating temperature **==> picture [215 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> case<br>PIN 1<br>CASE<br>2 PIN 2<br>e@ 1<br>TO – 220AC<br>**----- End of picture text -----**<br> - Temperature independent switching behavior - Superior surge current capability - Positive temperature coefficient of VF - Extremely fast switching speeds - Superior figure of merit QC/IF ## **Advantages** - Low standby power losses - Improved circuit efficiency (Lower overall cost) - Low switching losses - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Low reverse recovery current - Low device capacitance - Low reverse leakage current at operating temperature ## **Applications** - Power Factor Correction (PFC) - Switched-Mode Power Supply (SMPS) - Solar Inverters - Wind Turbine Inverters - Motor Drives - Induction Heating - Uninterruptible Power Supply (UPS) - High Voltage Multipliers ## **Maximum Ratings at Tj = 175 °C, unless otherwise specified** |**Parameter**|**Symbol**|**Conditions**|**Values**|**Unit**| |---|---|---|---|---| |Repetitive peak reversevoltage|VRRM||1200|V| |Continuousforward current|IF|TC = 25 °C|25|A| |Continuous forward current|IF|TC ≤ 150 °C|10|A| |RMS forward current|IF(RMS)|TC ≤ 150 °C|17|A| |Surge non-repetitive forward current, Half Sine<br>Wave|IF,SM|TC= 25 °C, tP= 10 ms<br>TC = 150 °C,tP= 10 ms|65<br>55|A| |Non-repetitive peak forward current|IF,max|TC = 25 °C,tP= 10µs|280|A| |I2t value|∫i2 dt|TC= 25 °C, tP= 10 ms<br>TC = 150 °C,tP= 10 ms|21<br>15|A2s| |Powerdissipation|Ptot|TC = 25 °C|190|W| |Operatingand storage temperature|Tj ,Tstg||-55 to 175|°C| ## **Electrical Characteristics at Tj = 175 °C, unless otherwise specified** |**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Values**|**Unit**| |---|---|---|---|---|---| |**Parameter**<br>**Symbol**<br>**Conditions**<br>**min.**||||**typ. **<br>~~-~~|**Unit**<br>**max.**<br>~~-~~| |Diode forward voltage<br>VF<br>IF= 10 A, Tj= 25 °C<br>IF= 10 A,Tj= 175 °C||||1.5<br>2.6<br>~~-~~|1.8<br>V<br>3.0<br>~~-~~| |Reverse current<br>IR<br>VR= 1200 V, Tj= 25 °C<br>VR = 1200 V,Tj= 175 °C||||5<br>10<br>~~-~~|50<br>µA<br>100<br>~~-~~| |Total capacitive charge|QC<br>~~=~~|IF≤ IF,MAX<br>dIF/dt = 200 A/μs<br>Tj = 175 °C<br>~~=~~|VR= 400 V<br>VR= 960 V<br>~~=~~|31<br>52<br>~~-~~<br>~~=~~|nC<br>~~-~~| |Switching time|ts<br>~~=~~||VR= 400 V<br>VR= 960 V<br>~~=~~|< 25<br>~~=~~|ns| |Total capacitance<br>C<br>VR= 1 V, f = 1 MHz, Tj= 25 °C<br>VR= 400 V, f = 1 MHz, Tj= 25 °C<br>VR = 1000 V,f = 1 MHz,Tj= 25 °C<br>~~=~~||||490<br>45<br>33<br>~~=~~|pF| http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg **1** of 4 Aug 2014 **GB10SLT12-220** **Figure 1: Typical Forward Characteristics** **==> picture [229 x 180] intentionally omitted <==** **Figure 3: Power Derating Curve** **==> picture [226 x 181] intentionally omitted <==** **Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics** **Figure 2: Typical Reverse Characteristics** **==> picture [230 x 180] intentionally omitted <==** **Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions )** **==> picture [227 x 181] intentionally omitted <==** **Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics** http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg **2** of 4 Aug 2014 **GB10SLT12-220** **Figure 7: Current vs Pulse Duration Curves at TC = 150 °C** **Figure 8: Transient Thermal Impedance** ## **Package Dimensions:** **TO-220AC PACKAGE OUTLINE** **==> picture [503 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> Ref. 0.171 (4.343)<br>0.103 (2.616) 0.400 (10.160) Ø 0.146 (3.708) Ref. 0.181 (4.597)<br>0.113 (2.870) 0.420 (10.668) 0.156 (3.962)<br>0.045 (1.143)<br>0.055 (1.397)<br>0.248<br>(6.299) 0.308<br>(7.823)<br>0.585 0.487<br>0.595 (12.387)<br>(14.859)<br>(15.113)<br>0.351 0.256 (6.502)<br>0.361<br>(8.915)<br>GB10SLT12-220 (9.169)<br>0.300 (7.620)<br>XXXXXX<br>0.047 (1.194) 0.250 (6.350)<br>Lot Code 0.053 (1.346) MAX.<br>0.028 (0.711) 0.080 (2.032) 0.500 (12.700)<br>0.035 (0.965) 0.120 (3.048) 0.580 (14.732)<br>0.012 (0.305)<br>0.100 BSC. 0.018 (0.457)<br>(2.540) BSC.<br>**----- End of picture text -----**<br> ## **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg **3** of 4 Aug 2014 **GB10SLT12-220** ||**Revision History**|**Revision History**|| |---|---|---|---| |Date|Revision|Comments|Supersedes| |2014/08/26|4|Updated Electrical Characteristics|| |2013/06/12|3|Updated Electrical Characteristics|| |2012/12/18|2|Secondgeneration update|| |2012/05/22|1|Secondgeneration release|| |2010/12/14|0|Initial release|| ||||| Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg **4** of 4 Aug 2014 **GB10SLT12-220** ## **SPICE Model Parameters** This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/GB10SLT12-220_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GB10SLT12-220. ``` * MODEL OF GeneSiC Semiconductor Inc. ``` - ``` * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ ``` - - `GeneSiC Semiconductor Inc.` ``` * 43670 Trade Center Place Ste. 155 ``` - `Dulles, VA 20166` - - `COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.` - `ALL RIGHTS RESERVED` - - `These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY` - `OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED` - `TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A` - `PARTICULAR PURPOSE."` - `Models accurate up to 2 times rated drain current.` - - `Start of GB10SLT12-220 SPICE Model` - ``` .SUBCKT GB10SLT12 ANODE KATHODE ``` ``` D1 ANODE KATHODE GB10SLT12_SCHOTTKY ``` ``` D2 ANODE KATHODE GB10SLT12_PIN ``` ``` .MODEL GB10SLT12_SCHOTTKY D ``` ``` + IS 4.55E-15 RS 0.0736 + N 1 IKF 1000 + EG 1.2 XTI -2 + TRS1 0.0054347826 TRS2 2.71739E-05 + CJO 6.40E-10 VJ 0.469 + M 1.508 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 10 TYPE SiC_Schottky + MFG GeneSiC_Semi .MODEL GB10SLT12_PIN D + IS 1.54E-22 RS 0.19 + TRS1 -0.004 N 3.941 + EG 3.23 IKF 19 + XTI 0 FC 0.5 + TT 0 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 10 TYPE SiC_PiN .ENDS ``` ``` * ``` ``` * End of GB10SLT12-220 SPICE Model ``` Sep 2013 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg **1** of 1
Updated at February 9, 2023
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