GB05MPS17-263

**TM** GB05MPS17-263 1700V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = 1700 V IF (TC = 135°C) = 13 A QC = 54 nC Features Package •  Low VF for High Temperature Operation **Case** •  Enhanced Surge and Avalanche Robustness •  Superior Figure of Merit QC/IF **RoHS** •  Low Thermal Resistance •  Low Reverse Leakage Current •  Temperature Independent Fast Switching •  Positive Temperature Coefficient of VF me ~~-~~ •  Low VF for High Temperature Operation **TO-263-7 K A REACH** Advantages Applications •  Improved System Efficiency •  EV Fast Chargers 

- High System Reliability •  Solar Inverters 

- Optimal Price Performance •  Anti-Parallel / Free-Wheeling Diode •  Reduced Cooling Requirements •  Motor Drives 

- Increased System Power Density 

- Zero Reverse Recovery Current 

   - High Frequency Rectifiers 

   - Switched Mode Power Supply (SMPS) 

- Easy to Parallel without Thermal Runaway •  Induction Heating and Welding •  Improved System Efficiency •  Medical Imaging 

Absolute Maximum Ratings (At Tc = 25°C Unless Otherwise Stated) **Parameter Symbol Conditions Values Unit Note** Repetitive Peak Reverse Voltage VRRM 1700 V TC = 100°C, D = 1 18 Continuous Forward Current IF TC = 135°C, D = 1 13 A Fig. 4 TC = 168°C, D = 1 5 Non-Repetitive Peak Forward Surge Current, Half Sine TC = 25°C, tP = 10 ms 54 Wave IF,SM TC = 150°C, tP = 10 ms 44 A TC = 25°C, tP = 10 ms 33 Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM A TC = 150°C, tP = 10 ms 24 Non-Repetitive Peak Forward Surge Current IF,MAX TC = 25°C, tP = 10 µs 270 A i2t Value ∫i2dt TC = 25°C, tP = 10 ms 14 A2s Non-Repetitive Avalanche Energy EAS L = 10.4 mH, IAS = 5 A 131 mJ Diode Ruggedness dV/dt VR = 0 ~ 1360 V 200 V/ns Power Dissipation PTOT TC = 25°C 214 W Fig. 3 Operating and Storage Temperature T  , Tj stg -55 to 175 °C 

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**TM** 

## GB05MPS17-263 1700V 5A SiC Schottky MPS™ Diode 

## Electrical Characteristics 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>IF = 5 A, T  = 25°C j 1.5  1.8<br>Diode Forward Voltage  VF V  Fig. 1<br>IF = 5 A, T  = 175°C j 2.1<br>VR = 1700 V, T  = 25°C j 1  5<br>Reverse Current  IR µA  Fig. 2<br>VR = 1700 V, T  = 175°C j 5<br>VR = 600 V  37<br>Total Capacitive Charge  QC nC  Fig. 7<br>IF ≤ IF,MAX VR = 1200 V  54<br>dIF/dt = 200 A/µs  VR = 600 V<br>Switching Time  tS < 10  ns<br>VR = 1200 V<br>VR = 1 V, f = 1MHz  470<br>Total Capacitance  C  pF  Fig. 6<br>VR = 1200 V, f = 1MHz  26<br>**----- End of picture text -----**<br>


## Thermal/Package Characteristics 

|**Parameter**<br>**Symbol**<br>**Conditions**|**Values**<br>**Unit**<br>**Note**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|
|Thermal Resistance, Junction - Case<br>R<br>thJC|0.7<br>°C/W<br>Fig. 9|
|Weight<br>W <br>T|1.45<br>g|



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Figure 1: Typical Forward Characteristics 

## IF = f(VF,T ); tj P = 250 µs 

Figure 3: Power Derating Curves 

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PTOT = f(TC); T  = 175°C j<br>**----- End of picture text -----**<br>


Figure 2: Typical Reverse Characteristics 

## IR = f(VR,T )j 

Figure 4: Current Derating Curves (Typical VF) 

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IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br>


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Figure 5: Current Derating Curves (Maximum VF) 

## IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz 

Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics 

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QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics 

C = f(VR); f = 1MHz 

Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics 

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EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


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Figure 9: Transient Thermal Impedance 

Zth,jc = f(tP,D); D = tP/T 

Figure 10: Forward Curve Model 

## Forward Curve Model Equation: 

IF = (VF - VBI)/RDIFF (A) 

Built-In Voltage (VBI): |ee VBI(T ) = j m × T  + j n (V) m = -0.00128 (V/°C) n = 0.99 (V) 

## Differential Resistance (RDIFF): 

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1/RDIFF<br>VBI<br>Forward<br>IF = f(VF,T )j<br>**----- End of picture text -----**<br>


- RDIFF(T ) = j a × Tj[2] + b × T  + j c (Ω) a = 2.03e-06 (Ω/°C2) b = 0.000711 (Ω/°C) c = 9.30e-02 (Ω) 

## Forward Power Loss Equation: 

PLOSS = VBI(T ) × Ij AVG + RDIFF(T ) × Ij RMS[2] 

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## Package Dimensions 

## TO-263-7 Package Outline 

## Package View 

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Case (K) Case (K)<br>od<br>NC A<br>**----- End of picture text -----**<br>


## NOTE 

1. CONTROLLED DEIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. 

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## RoHS Compliance 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. 

## REACH Compliance 

REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. 

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

## Related Links 

- SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GB05MPS17-263/GB05MPS17-263_SPICE.zip 

- PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GB05MPS17-263/GB05MPS17-263_PLECS.zip 

- CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GB05MPS17-263/GB05MPS17-263_3D.zip 

- Evaluation Boards: https://www.genesicsemi.com/technical-support 

- Reliability: https://www.genesicsemi.com/reliability 

- Compliance: https://www.genesicsemi.com/compliance 

- Quality Manual: https://www.genesicsemi.com/quality 

## www.genesicsemi.com/sic-schottky-mps/ 

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**Apr. 20 Rev 1.4 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. The information in this document is subject to change without notice.** 

**Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7**