GB01SLT06-214

## **GB01SLT06-214** 

## **Silicon Carbide Power Schottky Diode** 

## **Features** 

## **Package** 

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- Industry’s leading low leakage currents 

|**VRRM**|**=**|**650 V**|
|---|---|---|
|**IF (Tc = 25°C)**|**=**|**2.5 A**|
|**IF (Tc**≤**150°C)**|**=**|**1 A**|
|**QC**|**=**|**7 nC**|



- 175 °C maximum operating temperature 

- Temperature independent switching behavior 

- Superior surge current capability 

- Positive temperature coefficient of VF 

- Extremely fast switching speeds 

- Superior figure of merit QC/IF 

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PIN 1<br>PIN 2<br>**----- End of picture text -----**<br>


**SMB / DO – 214AA** 

## **Advantages** 

- Low standby power losses 

- Improved circuit efficiency (Lower overall cost) 

- Low switching losses 

- Ease of paralleling devices without thermal runaway 

- Smaller heat sink requirements 

- Low reverse recovery current 

- Low device capacitance 

- Low reverse leakage current at operating temperature 

## **Applications** 

- Power Factor Correction (PFC) 

- Switched-Mode Power Supply (SMPS) 

- Solar Inverters 

- Wind Turbine Inverters 

- Motor Drives 

- Induction Heating 

- Uninterruptible Power Supply (UPS) 

- High Voltage Multipliers 

## **Maximum Ratings at Tj = 175 °C, unless otherwise specified** 

|**Parameter**|**Symbol **||**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Repetitivepeak reverse voltage|VRRM|||650|V|
|Continuousforward current|IF||TC = 25 °C|2.5|A|
|Continuousforward current|IF||TC ≤ 150 °C|1|A|
|RMS forward current|IF(RMS)||TC ≤ 150 °C|2|A|
|Surge non-repetitive forward current, Half Sine<br>Wave|IF,SM|TC= 25 °C, t|= 25 °C, tP= 10 ms|10|A|
|Non-repetitive peak forward current|IF,max|TC = 25 °C,tP= 10µs||65|A|
|I<br>2t value|∫i<br>2dt|TC= 25 °C, t|= 25 °C, tP= 10 ms|0.5|A<br>2S|
|Power dissipation|Ptot||TC = 25 °C|64|W|
|Operatingand storage temperature|Tj ,Tstg|||-55 to 175|°C|



## **Electrical Characteristics at Tj = 175 °C, unless otherwise specified** 

|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Electrical Characteristics at Tj = 175 °C, unless otherwise specifiedj = 175 °C, unless otherwise specified = 175 °C, unless otherwise specified**<br>**Parameter**<br>**Symbol**<br>**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Conditions**<br>**min.**|||**typ. **|**Unit**<br>**max.**|
|Diode forward voltage<br>VF<br>IF= 1 A, Tj= 25 °C<br>IF= 1 A,Tj= 175 °C|||1.5<br>2.3<br>~~|~~|2.0<br>V<br>3.0|
|Reverse current<br>IR<br>VR= 650 V, Tj= 25 °C<br>VR = 650 V,Tj= 175 °C|||1<br>5<br>~~|~~|10<br>µA<br>50|
|Total capacitive charge<br>QC|IF≤ IF,MAX<br>dIF/dt = 200 A/μs<br>Tj = 175°C<br>~~eo~~|VR= 400 V<br>~~eo~~|7<br>~~eo~~<br>~~eee~~|nC<br>~~eee~~|
|Switchingtime<br>ts||VR= 400 V<br>~~eo~~<br>~~ee~~|< 20<br>~~eo~~<br>~~ee~~<br>~~eee~~|ns<br>~~eee~~|
|j<br>Total capacitance<br>C<br>VR= 1 V, f = 1 MHz, Tj= 25 °C<br>VR = 400 V,f = 1 MHz,Tj= 25 °C|||76<br>12<br>~~eee~~|pF<br>~~eee~~|



http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ 

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**GB01SLT06-214** 

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**Figure 1: Typical Forward Characteristics** 

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**Figure 3: Power Derating Curve** 

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**Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics** 

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**Figure 2: Typical Reverse Characteristics** 

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Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs)<br>               (Considering worst case Zth conditions )<br>**----- End of picture text -----**<br>


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**Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics** 

http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ 

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## **GB01SLT06-214** 

**Figure 7: Current vs Pulse Duration Curves at TC = 160 °C** 

**Figure 8: Transient Thermal Impedance** 

## **Package Dimensions:** 

## **SMB / DO - 214AA                                     PACKAGE OUTLINE** 

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Lot Code<br>Abbreviated Part Name<br>**----- End of picture text -----**<br>


## **NOTE** 

1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 

http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ 

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## **GB01SLT06-214** 

||**Revision History**|**Revision History**||
|---|---|---|---|
|Date|Revision|Comments|Supersedes|
|2014/08/26|1|Updated Electrical Characteristics||
|2013/09/09|0|Initial release||
|||||



Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 

GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. 

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. 

http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ 

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## **SPICE Model Parameters** 

This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/GB01SLT06-214_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GB01SLT06-214. 

* MODEL OF GeneSiC Semiconductor Inc. 

* 

* $Revision:   1.0 $ * $Date:   09-SEP-2013 $ 

* 

* GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 

- 

- COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. 

* ALL RIGHTS RESERVED 

* 

- These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY 

- OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED 

- TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A 

- PARTICULAR PURPOSE." 

- Models accurate up to 2 times rated drain current. 

- 

- Start of GB01SLT06-214 SPICE Model 

- 

.SUBCKT GB01SLT06 ANODE KATHODE 

D1 ANODE KATHODE GB01SLT06_25C; Call the Schottky Diode Model D2 ANODE KATHODE GB01SLT06_PIN; Call the PiN Diode Model 

.MODEL GB01SLT06_25C D 

+ IS 3.57E-18 RS 0.49751 + TRS1 0.0057 TRS2 2.40E-05 + N 1 IKF 322 + EG 1.2 XTI 3 + CJO 9.12E-11 VJ 0.371817384 + M 1.527759838 FC 0.5 + TT 1.00E-10 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 1 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor 

.MODEL GB01SLT06_PIN D 

+ IS 5.73E-11 RS 0.72994 + N 5 IKF 800 + EG 3.23 XTI -14 + FC 0.5 TT 0 + BV 650 IBV 1.00E-03 + VPK 650 IAVE 1 + TYPE SiC_PiN .ENDS 

* 

* End of GB01SLT06-214 SPICE Model 

Sep 2013 

http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ 

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