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GA03SLT12-220
Silicon Carbide Schottky Diode, Silicon, 1200V, Single, 1.2 kV, 3 A, 11 nC, TO-220AC
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- Manufacturer: GENESIC SEMICONDUCTOR
- Product type: Silicon Carbide Schottky Diodes
- No. of Pins: 2 Pin
- Product Range: 1200V
- Diode Mounting: Through Hole
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Average Forward Current: 3A
- Total Capacitive Charge: 11nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1.64 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **GB03SLT12-220** ## **Silicon Carbide Power Schottky Diode** ## **Features** - 1200 V Schottky rectifier ## **Package** - RoHS Compliant **==> picture [93 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> VRRM = 1200 V<br> IF = 3 A<br> QC = 11 nC<br>**----- End of picture text -----**<br> - 175 °C maximum operating temperature - Zero reverse recovery charge - Positive temperature coefficient of VF - Extremely fast switching speeds - • Temperature independent switching behavior • Lowest figure of merit QC/IF **==> picture [224 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Case<br>PIN 1<br>CASE<br>1 PIN 2<br>2<br>**----- End of picture text -----**<br> ## **TO – 220AC** ## **Advantages** - Improved circuit efficiency (Lower overall cost) - Low switching losses - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Industry's lowest reverse recovery charge - Industry's lowest device capacitance - Ideal for output switching of power supplies - Best in class reverse leakage current at operating temperature ## **Applications** - Power Factor Correction (PFC) - Switched-Mode Power Supply (SMPS) - Solar Inverters - Wind Turbine Inverters - Motor Drives - Induction Heating - Uninterruptible Power Supply (UPS) - Voltage Clamping - High Voltage Multipliers ## **Maximum Ratings, at Tj = 175 °C, unless otherwise specified** |**Parameter**|**Symbol**||**Conditions**|**Values**|**Unit**| |---|---|---|---|---|---| |Repetitivepeak reverse voltage|VRRM|||1200|V| |Continuous forward current|IF||TC≤ 150 °C|3|A| |RMS forward current|IF(RMS)||TC≤ 150 °C|5|A| |Surge non-repetitive forward current, Half Sine<br>Wave|IF,SM|TC= 25 °C, tp= 10 ms||10|A| |Non-repetitivepeak forward current|IF,max|TC= 25 °C, tp= 10 µs||45|A| |i2t value|∫i2dt|TC= 25 °C, t|= 25 °C, tp= 10 ms|0.5|A2s| |Power dissipation|Ptot||TC= 25 °C|85|W| |Operatingand storage temperature|Tj, Tstg|||-55 to 175|°C| ## **Electrical Characteristics, at Tj = 175 °C, unless otherwise specified** |**Parameter**|**Symbol**|**Conditions**|**min.**|**Values**<br>**typ.**|**max.**|**Unit**| |---|---|---|---|---|---|---| |Diode forward voltage|VF|IF= 3 A, Tj= 25 °C<br>IF= 3 A, Tj= 175 °C||1.65<br>2.90<br>~~_~~||V| |Reverse current|IR|VR= 1200 V, Tj= 25 °C<br>VR= 1200 V, Tj= 175 °C||3<br>10<br>~~_~~||µA| |Total capacitive charge<br>Switchingtime|QC<br>ts|11<br>< 15<br> VR= 950 V, IF≤ IF,max<br>dIF/dt = 330 A/μs, Tj = 150 °C<br>~~ee~~||||nC<br>ns| |Total capacitance|C|VR= 3 V, f = 1 kHz, Tj= 25 °C<br>VR= 200 V, f = 1 kHz, Tj= 25 °C||102<br>18<br>~~|~~||pF| |**Thermal Characteristics**||||||| |Thermal resistance, junction - case|RthJC|||1.76||°C/W| |**Mechanical Properties**||||||| |Mountingtorque|M|||0.6||Nm| 1. Considering worst case Zth conditions http://www.genesicsemi.com/index.php/sic-products/schottky Preliminary Datasheet http://www.genesicsemi.com Page 1 of 4 November 2010 **GB03SLT12-220** **==> picture [230 x 174] intentionally omitted <==** Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics **==> picture [230 x 175] intentionally omitted <==** Figure 3: Typical Power Derating Curve Figure 4: Typical Current Derating Curves (D = tP/T, tP = 400 µs[1] ) **==> picture [230 x 174] intentionally omitted <==** Figure 5: Typical Junction Capacitance versus Reverse Voltage Characteristics Figure 6: Typical Switching Energy versus Reverse Voltage Characteristics Preliminary Datasheet http://www.genesicsemi.com Page 2 of 4 November 2010 **GB03SLT12-220** Figure 7: Typical Current versus Pulse Duration Curves at TC =150[O] C Figure 8: Typical Transient Thermal Impedance ## **Package Dimensions:** ## **TO-220AC** ## **PACKAGE OUTLINE** ## **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Preliminary Datasheet http://www.genesicsemi.com Page 3 of 4 November 2010 **==> picture [496 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> GB03SLT12-220<br>**----- End of picture text -----**<br> ||**GB03SLT12-220**|**GB03SLT12-220**|**GB03SLT12-220**|**GB03SLT12-220**| |---|---|---|---|---| |||||| ||**Revision History**|||| ||Date|Revision|Comments|Supersedes| ||2010/11/20|1|Secondgeneration release|GA03SLT12-220| |||||| ||Published by<br>GeneSiC Semiconductor, Inc.<br>43670 Trade Center Place Suite 155<br>Dulles, VA 20166<br>GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.<br>GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any<br>intellectual property rights is granted by this document.<br>Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft<br>navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury<br>and/or property damage.|||| GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Preliminary Datasheet Page 4 of 4 November 2010 http://www.genesicsemi.com
Updated at February 9, 2023
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