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FZ825R33HE4DBPSA1
IGBT Module, Dual, Common Emitter, 825 A, 2.4 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: IHM-B
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Dual, Common Emitter
- Transistor Mounting: Panel
- DC Collector Current: 825A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 825A
- Collector Emitter Voltage Max: 3.3kV
- Collector Emitter Voltage V(br)ceo: 3.3kV
- Collector Emitter Saturation Voltage: 2.4V
- Collector Emitter Saturation Voltage Vce(on): 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1078.8 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FZ825R33HE4D IHM-B module** ES Gifteon ## **IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode** ## **Features** - Electrical features - VCES = 3300 V - IC nom = 825 A / ICRM = 1650 A - Low Qg and Cres - High DC stability - High short-circuit capability - Low switching losses - Low VCEsat - T = 150 °C vj op - Trench IGBT 4 - Unbeatable robustness - VCEsat with positive temperature coefficient - High current density - Mechanical features - AlSiC base plate for increased thermal cycling capability - High power density - Isolated base plate - Package with CTI > 600 - RoHS compliant ## **Potential applications** - High power converters - Medium voltage converters - Motor drives - Traction drives - UPS systems - Active frontend (energy recovery) - Commercial Agriculture Vehicles ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**6**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**7**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| Datasheet 2 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz|6.0|kV| |Partial discharge extinction<br>voltage|_V_isol|RMS, f = 50 Hz, QPD≤ 10 pC|2.6|kV| |DC stability|_V_CE(D)|Tvj=25°C, 100 Fit|2100|V| |Material of module<br>baseplate|||AlSiC|| |Creepage distance|_d_Creep|terminal to heatsink|32.2|mm| |Clearance|_d_Clear|terminal to heatsink|19.1|mm| |Comparative tracking index|_CTI_||> 600|| **Table 2 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||9||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC=25°C, per switch|||0.12||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC=25°C, per switch|||0.2||mΩ| |Storage temperature|_T_stg|||-40||150|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note|M6, Screw|4.25||5.75|Nm| |Terminal connection torque|_M_|- Mounting according to<br>valid application note|M4, Screw|1.8||2.1|Nm| ||||M8, Screw|8||10|| |Weight|_G_||||800||g| ## **2 IGBT, Inverter** ## **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= -40 °C|3300|V| ||||_T_vj= 150 °C|3300|| |Continous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_C= 105 °C|825|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||1650|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet 3 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 825 A,_V_GE= 15 V|_T_vj= 25 °C||2.40|2.65|V| ||||_T_vj= 125 °C||3.00||| ||||_T_vj= 150 °C||3.13|3.28|| |Gate threshold voltage|_V_GEth|_I_C= 32 mA, VCE= VGE,_T_vj=|25 °C|5.20|5.80|6.40|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 1800 V|||14||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.5||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||93.5||nF| |Reverse transfer capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||2.67||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 3300 V,_V_GE= 0 V|_T_vj= 25 °C|||5|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||400|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 825 A,_V_CE= 1800 V,<br>_V_GE= ±15 V,_R_Gon= 0.5 Ω|_T_vj= 25 °C||0.560||µs| ||||_T_vj= 125 °C||0.605||| ||||_T_vj= 150 °C||0.615||| |Rise time (inductive load)|_t_r|_I_C= 825 A,_V_CE= 1800 V,<br>_V_GE= ±15 V,_R_Gon= 0.5 Ω|_T_vj= 25 °C||0.130||µs| ||||_T_vj= 125 °C||0.150||| ||||_T_vj= 150 °C||0.160||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 825 A,_V_CE= 1800 V,<br>_V_GE= ±15 V,_R_Gof= 7 Ω|_T_vj= 25 °C||3.200||µs| ||||_T_vj= 125 °C||3.450||| ||||_T_vj= 150 °C||3.500||| |Fall time (inductive load)|_t_f|_I_C= 825 A,_V_CE= 1800 V,<br>_V_GE= ±15 V,_R_Gof= 7 Ω|_T_vj= 25 °C||0.900||µs| ||||_T_vj= 125 °C||1.450||| ||||_T_vj= 150 °C||1.650||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 825 A,_V_CE= 1800 V,<br>_L_σ= 85 nH,_V_GE= ±15 V,<br>_R_Gon= 0.5 Ω, di/dt =<br>4700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||920||mJ| ||||_T_vj= 125 °C||1450||| ||||_T_vj= 150 °C||1630||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 825 A,_V_CE= 1800 V,<br>_L_σ= 85 nH,_V_GE= ±15 V,<br>_R_Gof= 7 Ω, dv/dt = 1700<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||1100||mJ| ||||_T_vj= 125 °C||1470||| ||||_T_vj= 150 °C||1580||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 2400 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,_T_vj≤<br>150 °C||3600||A| |Thermal resistance, junction<br>to case|_R_thJC|per IGBT||||18.0|K/kW| Datasheet 1.10 4 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance, case to<br>heatsink|_R_thCH|per IGBT,λgrease= 1 W/(m*K)||7.17||K/kW| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= -40 °C|3300|V| ||||_T_vj= 150 °C|3300|| |Continous DC forward<br>current|_I_F|||825|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||1650|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|280|kA²s| ||||_T_vj= 150 °C|253|| |Maximum power dissipation|_P_RQM|_T_vj= 150 °C||2400|kW| |Minimum turn-on time|_t_onmin|||10|µs| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 825 A,_V_GE= 0 V|_T_vj= 25 °C||2.55|2.95|V| ||||_T_vj= 125 °C||2.30||| ||||_T_vj= 150 °C||2.20|2.50|| |Peak reverse recovery<br>current|_I_RM|_V_R= 1800 V,_I_F= 825 A,<br>_V_GE= -15 V, -diF/dt =<br>4700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1180||A| ||||_T_vj= 125 °C||1240||| ||||_T_vj= 150 °C||1250||| |Recovered charge|_Q_r|_V_R= 1800 V,_I_F= 825 A,<br>_V_GE= -15 V, -diF/dt =<br>4700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||430||µC| ||||_T_vj= 125 °C||830||| ||||_T_vj= 150 °C||970||| |Reverse recovery energy|_E_rec|_V_R= 1800 V,_I_F= 825 A,<br>_V_GE= -15 V, -diF/dt =<br>4700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||390||mJ| ||||_T_vj= 125 °C||875||| ||||_T_vj= 150 °C||1050||| Datasheet 1.10 5 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance, junction<br>to case|_R_thJC|per diode|||25.2|K/kW| |Thermal resistance, case to<br>heatsink|_R_thCH|per diode,λgrease= 1 W/(m*K)||9.43||K/kW| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| Datasheet 6 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [539 x 361] intentionally omitted <==** **----- Start of picture text -----**<br> output characteristic (typical), IGBT, Inverter output characteristic (typical), IGBT, Inverter<br>IC = f(VCE) IC = f(VCE)<br>VGE = 15 V Tvj = 150 °C<br>1650 1650<br>1375 1375<br>1100 1100<br>825 825<br>550 550<br>275 275<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 7 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1650 4800<br>4200<br>1375<br>3600<br>1100<br>3000<br>825 2400<br>1800<br>550<br>1200<br>275<br>600<br>0 0<br>5 6 7 8 9 10 11 12 13 0 275 550 825 1100 1375 1650<br>**----- End of picture text -----**<br> Datasheet 1.10 2021-03-16 7 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **switching losses (typical), IGBT, Inverter** E = f(RG) IC = 825 A, VCE = 1800 V, VGE = ± 15 V **switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 7 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [539 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 4000 10<br>3500<br>3000<br>1<br>2500<br>2000<br>1500<br>0.1<br>1000<br>500<br>0 0.01<br>0 2 4 6 8 10 12 14 16 18 20 0 275 550 825 1100 1375 1650<br>switching times (typical), IGBT, Inverter transient thermal impedance , IGBT, Inverter<br>t = f(RG) Zth = f(t)<br>IC = 825 A, VCE = 1800 V, VGE = ± 15 V, Tvj = 150 °C<br>10 100<br>10<br>1<br>1<br>0.1 0.1<br>0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 8 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) ## **capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C RGoff = 7 Ω, VGE = 15 V, Tvj = 150 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2200<br>1925<br>1650<br>1375<br>1100<br>825<br>550<br>275<br>0<br>0 500 1000 1500 2000 2500 3000 3500<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 825 A, Tvj = 25 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>120<br>90<br>60<br>30<br>0<br>0.1 1 10 100<br>**----- End of picture text -----**<br> **forward characteristic of (typical), Diode, Inverter** IF = f(VF) **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 15 1650<br>12<br>1375<br>9<br>6<br>1100<br>3<br>0 825<br>-3<br>550<br>-6<br>-9<br>275<br>-12<br>-15 0<br>0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br> Datasheet 9 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **switching losses (typical), Diode, Inverter** Erec = f(IF) VCE = 1800 V, RGon = RGon(IGBT) ## **switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 1800 V, IF = 825 A **==> picture [539 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1600 1600<br>1400 1400<br>1200 1200<br>1000 1000<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0 275 550 825 1100 1375 1650 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transient thermal impedance , Diode, Inverter safe operation area (SOA), Diode, Inverter<br>Zth = f(t) IR = f(VR)<br>T = 150 °C<br>vj<br>100 2200<br>1925<br>1650<br>10<br>1375<br>1100<br>825<br>1<br>550<br>275<br>0.1 0<br>0.001 0.01 0.1 1 10 0 500 1000 1500 2000 2500 3000 3500<br>**----- End of picture text -----**<br> Datasheet 10 1.10 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Circuit diagram** **5 Circuit diagram** ## **Figure 2** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Package outlines<br>**----- End of picture text -----**<br> **==> picture [79 x 74] intentionally omitted <==** **==> picture [56 x 54] intentionally omitted <==** **==> picture [110 x 61] intentionally omitted <==** **==> picture [57 x 54] intentionally omitted <==** ## **Figure 3** Datasheet 1.10 11 2021-03-16 **FZ825R33HE4D IHM-B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Module label code** ## **7 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 12 1.10 2021-03-16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-03-16 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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