FZ750R65KE3NOSA1

IGBT Module, Single Switch, 750 A, 3 V, 125 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: IGBT Modules
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 9Pins
Product Range: -
IGBT Technology: IGBT 3 [Trench/Field Stop]
IGBT Termination: Tab
Power Dissipation: -
IGBT Configuration: Single Switch
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 750A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 750A
Collector Emitter Voltage Max: 6.5kV
Collector Emitter Voltage V(br)ceo: 6.5kV
Collector Emitter Saturation Voltage: 3V
Collector Emitter Saturation Voltage Vce(on): 3V

Delivery and price
Units per pack	1
Price	2288.1 €
Current stock	10+
Lead time	30 days

Datasheet

FZ750R65KE3 

VCES = 6500V IC nom = 750A / ICRM = 1500A 

- Mittelspannungsantriebe 

- Traktionsumrichter 

- CEsat 

- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit 

- Erweiterter Lagertemperaturbereich bis zu Tstg = -55°C 

- 

- Gehäuse mit erweiterten 

- 

- 

- 

- CEsat 

- AlSiC base plate for increased thermal cycling capability 

- Extended storage temperature down to Tstg = -55°C 

- 

- Package with enhanced insulation of 10.4kV AC 10s 

- 

**Digit** 

Datasheet www.infineon.com 

2018-01-15 

FZ750R65KE3 

**==> picture [86 x 38] intentionally omitted <==**

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 125°C<br>Tvj= 25°C<br>Tvj= -50°C|VCES|6500<br>6500<br>5900|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 80°C, Tvj max= 150°C|IC nom|750|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1500|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 750 A, VGE= 15 V<br>IC= 750 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C|VCE sat||3,00<br>3,70|3,40<br>4,20|V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 100 mA, VCE= VGE, Tvj= 25°C|VGEth|5,40|6,00|6,60|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 3600V|QG||31,0||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||205||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,20||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 6500 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 750 A, VCE= 3600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C|td on||0,70<br>0,80||µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 750 A, VCE= 3600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C|tr||0,33<br>0,40||µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 750 A, VCE= 3600 V<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>Tvj= 25°C<br>Tvj= 125°C|td off||7,30<br>7,60||µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 750 A, VCE= 3600 V<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>Tvj= 25°C<br>Tvj= 125°C|tf||0,40<br>0,50||µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 750 A, VCE= 3600 V, LS= 280 nH<br>VGE= ±15 V<br>RGon= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C|Eon||4200<br>6500||mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 750 A, VCE= 3600 V, LS= 280 nH<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>Tvj= 25°C<br>Tvj= 125°C|Eoff||3600<br>4200||mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 4500 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 125°C<br>tP ≤10 µs,|ISC||4500||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||8,70|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||8,80||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-50||125|°C|



2 

V�3.2 2018-01-15 

Datasheet 

FZ750R65KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 125°C<br>Tvj= 25°C<br>Tvj= -50°C|VRRM|6500<br>6500<br>5900|6500<br>6500<br>5900||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|750|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1500|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|470|||kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|3000|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 750 A, VGE= 0 V<br>IF= 750 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||3,00<br>2,95|3,50<br>3,50|V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||1100<br>1200||A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||850<br>1600||µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||1400<br>3000||mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||18,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-50||125|°C|



3 

V�3.2 2018-01-15 

Datasheet 

FZ750R65KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 10 s|VISOL|10,4<br>|||kV|
|Teilentladungs-Aussetzspannung<br>Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPDtyp 10 pC|VISOL|5,1<br>|||kV|
|Kollektor-Emitter-Gleichsperrspannung<br>DCstability|Tvj= 25°C, 100 fit|VCE D|3800|||V|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||AlSiC||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AlN||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||56,0<br>56,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||26,0<br>26,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||18||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,12<br>0,12||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-55||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1400||g|



V�3.2 2018-01-15 

Datasheet 

4 

FZ750R65KE3 

**==> picture [86 x 38] intentionally omitted <==**

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�125°C 

**==> picture [484 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
1500 1500<br>Tvj = 25°C VGE = 20 V<br>Tvj = 125°C VGE = 15 V<br>VGE = 12 V<br>VGE = 10 V<br>1250 1250<br>1000 1000<br>750 750<br>500 500<br>250 250<br>0 0<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�1� Ω ,�RGoff�=�6.8� Ω ,�VCE�=�3600�V 

**==> picture [487 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
1500 18000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>16000<br>1250<br>14000<br>1000 12000<br>10000<br>750<br>8000<br>500 6000<br>4000<br>250<br>2000<br>0 0<br>6 7 8 9 10 11 12 13 0 250 500 750 1000 1250 1500<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


V�3.2 2018-01-15 

Datasheet 

5 

FZ750R65KE3 

**==> picture [487 x 656] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =750A,V CE =3600V<br>14000 10 pot TETT EE TT<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>12000<br>10000<br>8000<br>1<br>6000<br>4000<br>2000 i: 1 2 3 4<br>ri[K/kW]: 0,44 5,62 1,67 0,96<br>τ i[s]: 0,004 0,044 0,405 3,93<br>0 0,1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0,001 0,01 0,1 1 10 100<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =68 Ω ,T vj =125°C<br>1750 1500<br>Tvj = 125°C Tvj = 25°C<br>Tvj = 25°C Tvj = 125°C<br>Tvj = -40°C<br>1500<br>1250<br>1250<br>1000<br>1000<br>750 r)<br>/<br>750 /<br>/<br>500<br>/<br>500<br>/<br>/<br>/<br>250 7<br>250 /<br>7<br>7<br>~<br>0 0<br>2000 3000 4000 5000 6000 7000 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

Datasheet 

2018-01-15 

FZ750R65KE3 

**==> picture [489 x 656] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =1 Ω ,V CE =3600V IF =750A,V CE =3600V<br>4400 3300<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4000 3000<br>3600 2700<br>3200 2400<br>2800 2100<br>2400 1800<br>2000 1500<br>1600 1200<br>1200 900<br>800 600<br>400 300<br>0 0<br>0 250 500 750 1000 1250 1500 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f (t) IR =f(V R)<br>Tvj = 125°C<br>100 Aee 1750<br>ZthJC : Diode IR, Modul<br>H—pLASE<br>1500<br>1250<br>10<br>finan<br>Seti cette messi emia 1000<br>750<br>1<br>500<br>i: 1 2 3 4 250<br>ri[K/kW]: 2,69 11,49 2,82 1,61<br>τ i[s]: 0,005 0,048 0,313 3,348<br>0,1 0<br>0,001 0,01 0,1 1 10 100 0 1000 2000 3000 4000 5000 6000 7000<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

7 

2018-01-15 

FZ750R65KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **Schaltplan�/�Circuit�diagram** 

**==> picture [168 x 153] intentionally omitted <==**

## **Gehäuseabmessungen�/�Package�outlines** 

**==> picture [249 x 186] intentionally omitted <==**

8 

V�3.2 2018-01-15 

Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS**

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →