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FZ3600R17HP4HOSA2
IGBT Module, Three Phase Inverter, 3.6 kA, 1.9 V, 21 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench]
- IGBT Termination: Stud
- Power Dissipation: 21kW
- IGBT Configuration: Three Phase Inverter
- Transistor Mounting: Panel
- DC Collector Current: 3.6kA
- Power Dissipation Pd: 21kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 3.6kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.9V
- Collector Emitter Saturation Voltage Vce(on): 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1212.96 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules
## FZ3600R17HP4
VCES = 1700V IC nom = 3600A / ICRM = 7200A
## **典型应用**
- 大功率变流器
- 电机传动
-
-
## **电气特性**
-
- CEsat
- T
-
- CEsat
- T
## **机械特性**
-
-
- 高爬电距离和电气间隙
- • 高功率密度
-
- 铜基板
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-
-
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-
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1
技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ3600R17HP4
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FZ3600R17HP4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:WB<br>approvedby:PL<br>dateofpublication:2013-11-11<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>3600<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>7200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>21,0<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 3600 A, VGE= 15 V<br>IC= 3600 A, VGE= 15 V<br>IC= 3600 A, VGE= 15 V<br>VCE sat<br>1,90<br>2,30<br>2,40<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 145 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>38,0<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,54<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>295<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>9,50<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,5Ω<br>td on<br>0,66<br>0,74<br>0,78<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,5Ω<br>tr<br>0,28<br>0,29<br>0,295<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,5Ω<br>td off<br>1,60<br>1,70<br>1,75<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,5Ω<br>tf<br>0,21<br>0,315<br>0,345<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 3600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 12000 A/µs (Tvj= 150°C)<br>RGon= 0,5Ω<br>Eon<br>650<br>800<br>900<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 3600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 2350 V/µs (Tvj= 150°C)<br>RGoff= 0,5Ω<br>Eoff<br>1200<br>1450<br>1500<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>14000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>7,20 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>6,30<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-模块IGBT-modules FZ3600R17HP4
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|3600|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|7200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1800<br>1700|||kA²s<br>kA²s|
|最大损耗功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|3600|||kW|
|最小开通时间<br>Minimumturn-ontime||ton min|10,0|||µs|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 3600 A, VGE= 0 V<br>IF= 3600 A, VGE= 0 V<br>IF= 3600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||2600<br>3150<br>3300||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||730<br>1350<br>1550||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||490<br>950<br>1100||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||13,0|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||7,00||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�WB date�of�publication:�2013-11-11 approved�by:�PL revision:�2.2
3
IGBT-模块 IGBT-modules
## FZ3600R17HP4
## **初步数据**
|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>CU<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||32,2<br>32,2||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|19,1<br>19,1<br>> 400<br>typ.<br>max.<br>~~ee~~||mm|
|杂散电感,模块||LsCE||6,0||nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee~~<br>$eM6AHEAD VAY Oy A AET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,085<br>Tstg<br>-40<br>150<br>M<br>4,25<br>-<br>5,75<br>~~tt ff~~||||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting according to valid application note<br>$e MS ARSEAR AVAY bv AEA ETT<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||1900||g|
4
IGBT-模块 IGBT-modules
## FZ3600R17HP4
## **初步数据**
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>7200 7200<br>Tvj = 25°C VGE = 20V<br>6600 m Tvj = 125°C VW eee) 6600 IR VGE = 15V<br>Tvj = 150°C VGE = 12V<br>6000 6000 VGE = 10V<br>VGE = 9V<br>5400 Ee 5400 = VGE = 8V TR<br>4800 4800<br>4200 4200<br>3600 3600<br>3000 3000<br>2400 2400<br>ee ee ee eee eee<br>ee ee<br>1800 1800<br>eeff Vv Ye<br>1200 1200<br>600 600<br>ee<br>0 0<br>| fay | | | | AT<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFRIAK IGBT, Hes ( HB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =05 Ω ,R Goff =05 Ω ,V CE =900V<br>7200 4000<br>Tvj = 25°C Eon, Tvj = 125°C<br>6600 | Tvj = 125°C si 3600 (f= Eon, T beeper vj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>6000 Ee PoAfs Eoff, Tvj = 150°C PEEPva<br>3200<br>a ) e c<br>5400<br>e e e<br>2800<br>TT F Pt tT tT ET TT ET TT tT er<br>4800<br>|ee 2400 ee<br>4200<br>PoP 4 Pt TT TTT TT TT Tey YT<br>PA eee<br>3600 2000<br>Gee eee<br>TTR PT TTT ET TT ET rT Tt<br>3000<br>1600<br>ee ae P tEPERTT TT EET eeeee<br>2400<br>1200<br>1800 PY) BERReee eer<br>800<br>TT) ARES eases<br>1200<br>if eee reer<br>400<br>600 | BRP 4eSeee<br>SERRE<br>0 0<br>Pp peey|a ey)| || dT| | CaerPEREREEEE EE EEE<br>5 6 7 8 9 10 11 12 13 0 800 1600 2400 3200 4000 4800 5600 6400 7200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-模块 IGBT-modules
## FZ3600R17HP4
## **初步数据**
**==> picture [485 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =3600A,V CE =900V<br>6000 Se | 100 a<br>Eon, Tvj = 125°C ZthJC : IGBT<br>5500 Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>5000 | Eoff, Tvj = 150°C ooo or TT TT TTT]<br>ee P| ot TLL | r t ie Ce<br>M oo A EPTE n ETE EEEoe ET<br>4500<br>4000 10<br>P T A<br>3500 Pt | | Pe TL = —_—_<br>3000 P| | TY] | | ff] |<br>2500 Pt ZL LT TUTATTY<br>| Yi tt ft HHP oT<br>2000 1<br>1500 PTAP| /fader bere| ||| | IIeaSmet eat eastEI eeeil<br>1000 PTY)y | tot | ddd] Tce fA) i: eC 1 2 3 4<br>ri[K/kW]: 0,503 5,5949 0,7658 0,3428<br>500 a τ i[s]: 0,00148 0,04283 0,27027 3,9196<br>0 PPE EEE EE) 0,1 sll poo l<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I reverse C CE bias ) safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =0.5 Ω ,T vj =150°C a<br>8400 7200<br>7800 IICC, Modul, Chip 6600 TTvjvj = 25°C = 125°C<br>7200 eya fr a | Tvj = 150°C a ne<br>6000<br>6600<br>P| | tT | te tt 5400 | . . .<br>6000<br>P| | tT ft a<br>4800<br>5400<br>SSE eo<br>4800 Pet tf Ee 4200 a“<br>4200 ee 3600 ee ee ee<br>3600 Pp | | | tT | 3000 eee e eee<br>a<br>3000<br>ee 2400<br>2400<br>1800<br>1800<br>FEEEEEEEH LEAR<br>1200<br>1200<br>600 SHH 600 Pe ee<br>0 PET TP 0 Pea eee<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-模块 IGBT-modules
## FZ3600R17HP4
## **初步数据**
**==> picture [486 x 289] intentionally omitted <==**
**----- Start of picture text -----**<br>
E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon fs Ω ,V CE =900V IF = 3600 A, V CE =900V<br>1500 1500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>1400 Erec, Tvj = 150°C 1400 Erec, Tvj = 150°C<br>1300 e e es e l a eee 1300 F — - ———T<br>1200 Pot | ET eet 1200 ry Ty d E yfTTff |<br>1100<br>pf 1100 CE 4<br>1000<br>pf PP ee 1000 rToP<br>900<br>Pp | ft| te| ae| | 900 PT R TE PPoPPp PT<br>800<br>800<br>700<br>pf} aA | ft | aceeennan<br>700<br>600<br>FP iyx | | ft | NBEO<br>600<br>500<br>400 500<br>pATT EN<br>300 400<br>P7{ | | | fF | pitt | Ps<br>200 | {| | | | | | ft 300 Pt tT tt | | | | ct<br>0 900 1800 2700 3600 4500 5400 6300 7200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Z ren thJC<br>**----- End of picture text -----**<br>
> I rr R R aan ) area Diode, Inverter (SOA) Tvj = 150°C
**==> picture [487 x 252] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 8400<br>ZthJC : Diode IR, Modul<br>7800<br>7200<br>Typ e ess FT pp<br>a ee el 6600 Ft [\; | | | ft<br>6000<br>Haire<br>10<br>ce 5400 PF tf ft AK] ff ff<br>rTPtaTTTT ATaTT| ll 48004200 PF | | | \\ fo fof ff<br>3600<br>PTI TIT ET Pt} PN pe<br>CULE 3000<br>1<br>Ea LATE EET 2400<br>PEASE SEH | | | | | | rr<br>PTETT= Pr FP aah 1800 rT TT dEUTS<br>e e TT T]<br>i: 1 2 3 4 | | 1200 Fo | | ff] TL<br>ri[K/kW]: 0,7642 1,1024 10,1438 1,1968<br>S τ i[s]: 0,0006 M 0,004 0,0409 0,5593 600 ee<br>LMoo o ee<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
7
## 技术信息�/�Technical�Information
> IGBT-模块IGBT-modules FZ3600R17HP4
## **接线图�/�circuit_diagram_headline**
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **封装尺寸�/�package�outlines**
**==> picture [68 x 64] intentionally omitted <==**
**==> picture [48 x 45] intentionally omitted <==**
**==> picture [139 x 53] intentionally omitted <==**
**==> picture [49 x 46] intentionally omitted <==**
prepared�by:�WB date�of�publication:�2013-11-11 approved�by:�PL revision:�2.2
8
IGBT-模块 IGBT-modules
## FZ3600R17HP4
## **初步数据**
## **使用条件和条款**
## 使用条件和条款
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9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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