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FZ3600R17HP4B2BOSA2
IGBT Module, Single Switch, 3.6 kA, 1.9 V, 19.5 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:3.6kA; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:19.5kW; Collector Emitter Voltage V(br)ceo:1.7kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 19.5kW
- IGBT Configuration: Single Switch
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 3.6kA
- Power Dissipation Pd: 19.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 3.6kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.9V
- Collector Emitter Saturation Voltage Vce(on): 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1559.04 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module ## FZ3600R17HP4_B2 VCES = 1700V IC nom = 3600A / ICRM = 7200A - - Hochleistungsumrichter - • Traktionsumrichter • Windgeneratoren - - - - - - CEsat - - - CEsat - - - AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit - - - - - - - AlSiC base plate for increased thermal cycling capability - - - - - **==> picture [23 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Digit<br>**----- End of picture text -----**<br> 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FZ3600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FZ3600R17HP4_B2<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:WB<br>approvedby:IB<br>dateofpublication:2016-01-21<br>revision:V3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>3600<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>7200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>19,5<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 3600 A, VGE= 15 V<br>IC= 3600 A, VGE= 15 V<br>IC= 3600 A, VGE= 15 V<br>VCE sat<br>1,90<br>2,30<br>2,40<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 145 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>38,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,54<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>295<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>9,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>td on<br>0,55<br>0,63<br>0,65<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>tr<br>0,28<br>0,29<br>0,295<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,5Ω<br>td off<br>1,60<br>1,70<br>1,75<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 3600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,5Ω<br>tf<br>0,21<br>0,315<br>0,345<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 3600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 12000 A/µs (Tvj= 150°C)<br>RGon= 0,6Ω<br>Eon<br>780<br>980<br>1050<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 3600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 2350 V/µs (Tvj= 150°C)<br>RGoff= 0,5Ω<br>Eoff<br>1200<br>1450<br>1500<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>14000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>5,70 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,70<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Modul IGBT-Module FZ3600R17HP4_B2 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|3600|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|7200|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2100<br>2000|||kA²s<br>kA²s| |Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|4900|||kW| |Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 3600 A, VGE= 0 V<br>IF= 3600 A, VGE= 0 V<br>IF= 3600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||2900<br>3400<br>3650||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||850<br>1550<br>1750||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 3600 A, - diF/dt = 12000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||550<br>1050<br>1250||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||8,06|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||10,5||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�WB date�of�publication:�2016-01-21 approved�by:�IB revision:�V3.1 3 IGBT-Modul IGBT-Module FZ3600R17HP4_B2 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||AlSiC|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||32,2<br>32,2<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,1<br>19,1<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||6,0||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,085||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||1200||g| prepared�by:�WB date�of�publication:�2016-01-21 approved�by:�IB revision:�V3.1 4 ## Technische�Information�/�Technical�Information ## IGBT-Modul IGBT-Module FZ3600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7200 7200<br>Tvj = 25°C VGE = 20V<br>6600 Tvj = 125°C 6600 VGE = 15V<br>Tvj = 150°C VGE = 12V<br>6000 6000 VVGEGE = 10V = 9V<br>VGE = 8V<br>5400 5400<br>4800 4800<br>4200 4200<br>3600 3600<br>3000 3000<br>2400 2400<br>1800 1800<br>1200 1200<br>600 600<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.6� Ω ,�RGoff�=�0.5� Ω ,�VCE�=�900�V **==> picture [489 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 7200 4000<br>6600 T T Tvj vj vj = 25°C = 125°C = 150°C 3600 E EEononoff , T ,, T Tvjvvjj = 125°C = 1 = 125°C50°C<br>6000 Eoff, Tvj = 150°C<br>3200<br>5400<br>2800<br>4800<br>2400<br>4200<br>3600 2000<br>3000<br>1600<br>2400<br>1200<br>1800<br>800<br>1200<br>400<br>600<br>0 0<br>5 6 7 8 9 10 11 12 13 0 800 1600 2400 3200 4000 4800 5600 6400 7200<br>VGE [V] IC [A]<br>prepared�by:�WB date�of�publication:�2016-01-21<br>approved�by:�IB revision:�V3.1<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 ## IGBT-Modul IGBT-Module FZ3600R17HP4_B2 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =3600A,V CE =900V<br>6000 100<br>Eon, Tvj = 125°C ZthJC : IGBT<br>5500 Eon, Tvj = 150°C Sf / [Sa] | a<br>SE [D] Eoff, Tvj = 125°C [OA] i a<br>5000 Eoff, Tvj = 150°C Pe) aEEEeee<br>4500<br>4000 10<br>3500<br>3000 CEA EEE HH Eee<br>y // Pr rrnie -barerr<br>2500<br>7 weerees Sy<br>2000 y, wees 1<br>fn een Vi<br>1500 i= (2 eee<br>1000 / Cr Ee i: 1 2 3 4<br>ri[K/kW]: 1 3,16 0,95 0,59<br>500 τ i[s]: 0,00161 0,0401 0,412 6,7<br>0 0,1<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =05 Ω ,T vj =150°C<br>8400 7200<br>IC, Modul 6800 Tvj = 25 ° C<br>7800 IC, Chip Tvj = 125°C<br>6400 T vj = 150°C<br>7200<br>6000<br>6600 5600<br>6000 5200<br>4800<br>5400<br>4400<br>4800<br>4000<br>4200 3600<br>3200<br>3600<br>2800<br>3000<br>2400<br>2400 Seeeeeees 2000 Hf<br>1800 Pp | | te tt 1600 /4<br>1200<br>1200<br>800<br>600<br>400<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Modul IGBT-Module FZ3600R17HP4_B2 **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f il F) Erec =f(R G)<br>RGon =0.6 Ω ,V CE =900V IF =3600A,V CE =900V<br>1600 1500<br>1500 EErecrec, T, Tvjvj = 125°C = 150°C 1400 E E rec rec , T , T vj vj = 125°C = 150°C<br>==— =|<br>1400<br>1300<br>1300 —— 4 _ =<=a (eeeje \ ee<br>1200<br>> Pt | PT EE<br>1200<br>1100<br>1100 PML | TP TE<br>1000 1000<br>900 P| vv | | | 900 PINEEP tt<br>800 800<br>700<br>700<br>600<br>600<br>// ~<br>500<br>500<br>400<br>300 400<br>200 300<br>0 900 1800 2700 3600 4500 5400 6300 7200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f (t) IR =f(V R)<br>Tvj = 150°C<br>100 8400<br>ZthJC : Diode IR, Modul<br>7800<br>7200<br>6600<br>6000<br>10<br>5400<br>a<br>4800<br>Sees esiemeriieeeneat! 4200 oo<br>email peciiiiaaatiiiamaaiil<br>3600<br>3000<br>1<br>ACAI ELIMI AM EL<br>2400<br>SSte<br>1800<br>i: 1 2 3 4 1200<br>ri[K/kW]: 1,65 4,2 1,4 0,81<br>τ i[s]: 0,0015 0,0379 0,342 6,21<br>600<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FZ3600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [68 x 64] intentionally omitted <==** **==> picture [48 x 45] intentionally omitted <==** **==> picture [139 x 53] intentionally omitted <==** **==> picture [49 x 46] intentionally omitted <==** prepared�by:�WB date�of�publication:�2016-01-21 approved�by:�IB revision:�V3.1 8 ## IGBT-Modul IGBT-Module ## FZ3600R17HP4_B2 ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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