FZ250R65KE3NPSA1

IGBT-模块 IGBT-Module 

## FZ250R65KE3 

## 高绝缘等级模块 

VCES = 6500V 

IC nom = 250A / ICRM = 500A 

## **典型应用** 

- 中压变流器 

- 牵引变流器 

- 

- 

## **电气特性** 

- CEsat 

- CEsat 

## **机械特性** 

- 碳化硅铝（AlSiC）基板提供更高的温度循环能力 

- stg 

- 

- 

- 高爬电距离和电气间隙 

- AlSiC Base Plate for increased Thermal Cycling Capability 

- Extended Storage Temperature down to Tstg = -55°C 

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- Package with enhanced Insulation of 10.2kV AC 1min 

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## **Digit** 

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技术信息�/�Technical�Information IGBT-模块IGBT-Module FZ250R65KE3 

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## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FZ250R65KE3<br>IGBT-模块<br>IGBT-Module||
|---|---|
|preparedby:DTH<br>approvedby:DTS<br>dateofpublication:2014-06-16<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 125°C<br>Tvj= 25°C<br>Tvj= -50°C<br>VCES<br>6500<br>6500<br>5900<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>IC nom<br>250<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>500<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150°C<br>Ptot<br>4,80<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 250 A, VGE= 15 V<br>IC= 250 A, VGE= 15 V<br>VCE sat<br>3,00<br>3,70<br>3,40<br>4,20<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 35,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,4<br>6,0<br>6,6<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 3600V<br>QG<br>10,0<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,3<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>69,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 6500 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 250 A, VCE= 3600 V<br>VGE= ±15 V<br>RGon= 3,0Ω<br>td on<br>0,70<br>0,80<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 250 A, VCE= 3600 V<br>VGE= ±15 V<br>RGon= 3,0Ω<br>tr<br>0,33<br>0,40<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 250 A, VCE= 3600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>td off<br>7,30<br>7,60<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 250 A, VCE= 3600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>tf<br>0,40<br>0,50<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 250 A, VCE= 3600 V, LS= 280 nH<br>VGE= ±15 V<br>RGon= 3,0Ω<br>Eon<br>1400<br>2200<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 250 A, VCE= 3600 V, LS= 280 nH<br>VGE= ±15 V<br>RGoff= 20Ω<br>Eoff<br>1200<br>1400<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 4500 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1500<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>26,1 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>26,5<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-50<br>125<br>°C||



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技术信息�/�Technical�Information IGBT-模块IGBT-Module FZ250R65KE3 

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## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 125°C<br>Tvj= 25°C<br>Tvj= -50°C|VRRM|6500<br>6500<br>5900|6500<br>6500<br>5900||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|250|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|500|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|52,0|||kA²s|
|最大损耗功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|1000|||kW|
|最小开通时间<br>Minimumturn-ontime||ton min|10,0|||µs|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 250 A, VGE= 0 V<br>IF= 250 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||3,00<br>2,95|3,50<br>3,50|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 250 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||370<br>400||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 250 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||290<br>540||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 250 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 3600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||470<br>1000||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||56,0|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||42,0||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-50||125|°C|



prepared�by:�DTH date�of�publication:�2014-06-16 approved�by:�DTS revision:�3.0 

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IGBT-模块 IGBT-Module 

## 技术信息�/�Technical�Information 

## FZ250R65KE3 

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## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|10,2|||kV|
|局部放电停止电压<br>Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPDtyp 10 pC (acc. to IEC 1287)|VISOL|5,1|||kV|
|DC稳定性<br>DCstability|Tvj= 25°C, 100 fit|VCE D|3800|||V|
|模块基板材料<br>Materialofmodulebaseplate|||AlSiC||||
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||AlN||||
|爬电距离<br>Creepagedistance|端子至散热器/terminaltoheatsink<br>端子至端子/terminaltoterminal||56,0<br>56,0|||mm|
|电气间隙<br>Clearance|端子至散热器/terminaltoheatsink<br>端子至端子/terminaltoterminal||26,0<br>26,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||25||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||0,36<br>0,36||mΩ|
|储存温度<br>Storagetemperature||Tstg|-55||125|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M6根据相应的应用手册进行安装<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25|-|5,75|Nm|
|端子联接扭距<br>Terminalconnectiontorque|螺丝M8根据相应的应用手册进行安装<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|8,0|-|10|Nm|
|重量<br>Weight||G||500||g|



prepared�by:�DTH date�of�publication:�2014-06-16 approved�by:�DTS revision:�3.0 

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## IGBT-模块 IGBT-Module $& 7K (5 & / Technical Information 

## FZ250R65KE3 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>500 500<br>Tvj = 25°C VGE = 20 V o<br>450 | Tvj = 125°C Jf 450 VGE = 15 V<br>J | VGE = 12 V Pi e T t<br>VGE = 10 V<br>400 A  0 400 |<br>ee<br>350 350<br>eee eee<br>300 300<br>250 250 ~<br>ee ee ee e ee<br>/ /|<br>/ /<br>200 200<br>/’ , [ima/ :// f<br>150 150<br>/<br>100 100<br>50 50<br>a2 ee) ee<br>A ee ee<br>0 0<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =3 Ω ,R Goff =204 Ω ,V CE =3600V<br>500 6000<br>Tvj = 25°C Eon, Tvj = 125°C<br>450 E Tvj = 125°C O] Eoff, Tvj = 125°C<br>5000<br>| A’ Sy<br>400<br>~ TT f/f | JE y<br>350<br>4000<br>300<br>250 3000<br>200<br>2000<br>150<br>pf | ye | 7 ane<br>100<br>1000<br>v le?<br>50<br>i ae x, for<br>0 0<br>6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400 450 500<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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## $&713 IGBT-模块 IGBT-Module & / Technical Information 

## FZ250R65KE3 

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switchingFFRIRE IGBT,losses HAIGBT,Inverter( A) (typical) transientBeASTARAithermalIGBT, iimpedance 3535 IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =250A,V CE =3600V<br>5000 a 100 Y__{_{[[{{{jfj_{[[<br>Eon, Tvj = 125°C q1 #H— ZthJC : IGBT |<br>Eoff, Tvj = 125°C oo o<br>= { f ii fT Pia ey<br>4000 A PTPTE TT TTTTU,CoCTT o<br>7 | | |tt ee<br>a vl<br>10 ee<br>3000 LY Ceee Ze<br>aa a | | |<br>a<br>2000<br>1<br>(7YotT|t TT [Ti] Tt tT tieeTTTeeTT<br>a<br>1000 LE eefaye ApINPT [TT] eTTTape UTETT|ie<br>i: 1 2 3 4<br>ri[K/kW]: 1,32 16,86 5 2,88<br>τ i[s]: 0,004 0,044 0,405 3,93<br>0 0,1<br>0 3 6 9 12 15 18 21 24 27 30 33 36 0,001 0,01 0,1 1 10 100<br>RG [ Ω ] t [s]<br>Rie22LF K IGBT, #3825 ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =20.4 Ω<br>700 500<br>Tvj = 125°C Tvj = 25°C<br>Tvj = 25°C 450 Tvj = 125°C<br>600 Tvj = -50°C<br>400<br>500<br>350<br>300<br>400<br>250<br>300<br>200<br>150<br>200<br>100<br>100<br>PL ay<br>50<br>0 0<br>0 1000 2000 3000 4000 5000 6000 7000 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-Module 

## FZ250R65KE3 

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Erec =f (I F) Erec =f(R G)<br>RGon a Ω ,V CE =3600V IF = 3508, V CE = 3600 V<br>1500 | 1200<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>1250 E—- a 1000 | ft<br>1000 800<br>750 600<br>500 400<br>250 200<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0<br>IF [A] RG [ Ω ]<br>RAAB RE ees STK —MB, LEE (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f IR =f(V R)<br>Tvj = O5°C<br>100 600<br>ZthJC : Diode IR, Modul<br>Heo —<br>a PC ee ll<br>SSS ST —<br>500<br>EY oT 0 ee | |<br>COTA CAA 400 Py Ap Ly<br>STATI TTA X<br>10 A = 300  EEN<br>a= ee ell \<br>aTn ee ell<br>200<br>a Co on on oon NN<br>AA a Il a<br>Vv] ( LLU VT) 100 Pp) fp Ia.<br>i: 1 2 3 4<br>ri[K/kW]: 8,07 34,47 8,46 4,83<br>τ i[s]: 0,005 0,048 0,313 3,348<br>1 0<br>0,001 0,01 0,1 1 10 100 0 1000 2000 3000 4000 5000 6000 7000<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


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## 技术信息�/�Technical�Information IGBT-模块IGBT-Module FZ250R65KE3 

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prepared�by:�DTH date�of�publication:�2014-06-16<br>approved�by:�DTS revision:�3.0<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-Module 

## FZ250R65KE3 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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