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FZ2400R17HP4B29BOSA2
IGBT Module, Single Switch, 2.4 kA, 1.9 V, 15.5 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:2.4kA; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:15.5kW; Collector Emitter Voltage V(br)ceo:1.7kV;
- SVHC: No SVHC (25-Jun-2025)
- Product Range: IHM B
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 15.5kW
- IGBT Configuration: Single Switch
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 2.4kA
- Power Dissipation Pd: 15.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 2.4kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.9V
- Collector Emitter Saturation Voltage Vce(on): 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1121.43 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FZ2400R17HP4_B29
VCES = 1700V IC nom = 2400A / ICRM = 4800A
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- CEsat
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- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit
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- AlSiC Base Plate for increased Thermal Cycling Capability
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## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FZ2400R17HP4_B29
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FZ2400R17HP4_B29<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:WB<br>approvedby:IB<br>dateofpublication:2013-11-05<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>2400<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>4800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>16,0<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 2400 A, VGE= 15 V<br>IC= 2400 A, VGE= 15 V<br>IC= 2400 A, VGE= 15 V<br>VCE sat<br>1,90<br>2,30<br>2,40<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 96,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>25,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,65<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>195<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>6,30<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 2400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>td on<br>0,41<br>0,46<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 2400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>tr<br>0,17<br>0,175<br>0,185<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 2400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,4Ω<br>td off<br>1,15<br>1,30<br>1,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 2400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,4Ω<br>tf<br>0,28<br>0,46<br>0,50<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 2400 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 13500 A/µs (Tvj= 150°C)<br>RGon= 0,6Ω<br>Eon<br>300<br>450<br>470<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 2400 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 0,4Ω<br>Eoff<br>660<br>870<br>920<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>11000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>9,30 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>10,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FZ2400R17HP4_B29
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|2400|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|4800|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1400<br>1350|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|3600|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 2400 A, VGE= 0 V<br>IF= 2400 A, VGE= 0 V<br>IF= 2400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 2400 A, - diF/dt = 13500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||2800<br>3200<br>3300||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 2400 A, - diF/dt = 13500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||665<br>1150<br>1300||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 2400 A, - diF/dt = 13500 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||470<br>840<br>950||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||12,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||11,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�WB date�of�publication:�2013-11-05 approved�by:�IB revision:�2.3
3
IGBT-Module IGBT-modules
## FZ2400R17HP4_B29
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>AlSiC||kV|
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||32,2<br>32,2||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,1<br>19,1||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|min.<br>typ.<br>max.<br>6,0<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,10||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee~~<br>Schraube M6<br>- Montage gem. giltiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|Tstg<br>M|-40<br>4,25|-|150<br>5,75|°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1200||g|
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## IGBT-Module IGBT-modules Technische Information FZ2400R17HP4_B29 / Technical Information
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>4800 4800<br>Tvj = 25°C VGE = 20V<br>4400 m Tvj = 125°C VW eee) 4400 IR VGE = 15V<br>Tvj = 150°C VGE = 12V<br>4000 Joe 4000 VGE = 10V pita<br>VGE = 9V<br>3600 3600 VGE = 8V<br>ee e e | pAet<br>3200 3200<br>2800 2800<br>ee ee ee ee eee<br>ee<br>2400 2400<br>ee ee ee eee eee<br>2000 2000<br>1600 1600<br>ee ee ee eee eee<br>1200 1200<br>ee ee<br>ff Vv<br>800 800<br>400 400<br>ee<br>0 | ta | | | | 0 PLATT T tT<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =06 Ω ,R Goff =04 Ω ,V CE =900V<br>4800 2500<br>Tvj = 25°C Eon, Tvj = 125°C<br>4400 me Tvj = 125°C tLe fe = Eon, Tvj = 150°C |<br>Tvj = 150°C Eoff, Tvj = 125°C<br>4000 = [i a Eoff, Tvj = 150°C<br>2000<br>ee — IE EERERED<br>3600<br>i BERE R RRREEA<br>3200<br>1500<br>2800<br>PPP ye) LL EL<br>2400<br>Oo Ee<br>2000 2 eee cee<br>1000<br>1600<br>tttAt tf PTT Te<br>1200<br>Peete<br>500<br>800<br>pt | wt | tt aa<br>P acer<br>400<br>po YE || LarT | | tT I<br>0 Per | | | | | 0 TT ETLTET<br>5 6 7 8 9 10 11 12 13 0 800 1600 2400 3200 4000 4800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## FZ2400R17HP4_B29
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Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =4+15V,1 C =2400A,V CE =900V<br>5000 100<br>a pe<br>Eon, Tvj = 125°C ZthJC : IGBT<br>HH— EE HH} tH<br>4500 Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>4000 = P} ) ft | df e e ell<br>3500 TTT T ILT o PT ETE ETT<br>10<br>PPT | |) ee24 PtCUMIN CI<br>3000<br>7 Daearaea (ae ue 321 (Reet ie east eel<br>iti<br>2500<br>2000 P} ) ft | beatie dd|)| be6TH te TH<br>1<br>1500 eeeP| Ala| | bee- eT a a ee eeeeee<br>1000 Z Ie rT TTT rT TTT TTT TT<br>i: 1 2 3 4<br>500 TAT | r τ ii[K/kW]: [s]: 0,76185 0,0011769 2,123722 0,0126394 | 5,05441 0,0683424 1,29129 2,397378<br>PETE pt too l<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE - ee V,R Goff =04 Ω ,T vj =150°C<br>5600 4800<br>IC, Modul Tvj = 25°C<br>FU IC, Chip 4400 Mm Tvj = 125°C L LL. ve<br>4800 a | e T e vj = 150°C<br>4000<br>PLT TTT ETT Ey EET 3600 PT] . LIA TT<br>4000<br>PLP EEE Sacseeeeae<br>3200<br>3200 P LE EEEOC 2800 EE |<br>2400<br>PEPE EE SRR eee<br>2400 PEPEEE 2000 Pi ttt EEL At<br>PECEEEECEECCER | 1600 Se<br>1600<br>PLETE TE EEE TTT TAT<br>1200<br>PLE EEE SaaS Ae<br>800<br>800<br>PLE EEE RAT<br>400<br>PLP EE EE A<br>0 PET TTT TTT EE 0 EERE Zane<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FZ2400R17HP4_B29
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**----- Start of picture text -----**<br>
E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon 4 Ω ,V CE =900V IF = S400 A, V CE =900V<br>1200 1200<br>E es rec, Tvj = 125°C uw 7 ya s Erec, Tvj s = 125°C<br>1100 Erec, Tvj = 150°C 1100 Erec, Tvj = 150°C<br>Ee.Ure) fe<br>1000 P TT ere}“i A 1000 TeLT<br>e e<br>900800 PT [rye)] / | a 900800 OEReee\<br>700 PervZL LIA 700 EE EE<br>600 Py, Ey 600 LAKE<br>500 Fa 7 ee ee 500<br>400 PYE TTT] 400 OLLRREEETT<br>a<br>300 300<br>cc<br>200 200<br>0 600 1200 1800 2400 3000 3600 4200 4800 0,0 1,0 2,0 3,0 4,0 5,0 6,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>Z transient thJC thermal impedance Diode, Inverter I safe R operation R) area Diode, Inverter (SOA)<br>of Tvj Sor<br>100 5600<br>ZthJC : Diode IR, Modul<br>oro or [L] [ETT] TT<br>4800<br>ASS EEEE EE<br>PT ETE ET<br>4000<br>CUT EH H<br>10<br>J} 3200 PEELE<br>eS ENV ELE<br>PA SERRE RRRRREDNEEEEE<br>UATE 2400<br>1 a ETE eeeLIME TRIM, = EEEPP ANY<br>1600<br>e T i: 1 EE 2 3 4 800 PPP EEE<br>ri[K/kW]: 1,456682 3,496105 6,153592 1,469539<br>τ i[s]: 0,0010967 0,0125806 0,0698717 2,250957<br>an | eeeee<br>|<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FZ2400R17HP4_B29
## **Schaltplan�/�circuit_diagram_headline**
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## **Vorläufige�Daten Preliminary�Data**
## **Gehäuseabmessungen�/�package�outlines**
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prepared�by:�WB date�of�publication:�2013-11-05 approved�by:�IB revision:�2.3
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FZ2400R17HP4_B29
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**----- Start of picture text -----**<br>
Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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