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FZ1600R17HP4B2BOSA2
IGBT Module, Dual, 1.6 kA, 1.9 V, 10.5 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 10.5kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 1.6kA
- Power Dissipation Pd: 10.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.6kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.9V
- Collector Emitter Saturation Voltage Vce(on): 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 941.34 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module FZ1600R17HP4_B2 VCES = 1700V IC nom = 1600A / ICRM = 3200A - - Hochleistungsumrichter - • Traktionsumrichter - Windgeneratoren - - - - - - CEsat - - - CEsat - - - AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit - - - - - - - AlSiC base plate for increased thermal cycling capability - - - - - **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FZ1600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FZ1600R17HP4_B2<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:WB<br>approvedby:IB<br>dateofpublication:2016-01-21<br>revision:V3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>1600<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>3200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>10,5<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1600 A, VGE= 15 V<br>IC= 1600 A, VGE= 15 V<br>IC= 1600 A, VGE= 15 V<br>VCE sat<br>1,90<br>2,30<br>2,40<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 64,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>17,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,97<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>130<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,20<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>td on<br>0,52<br>0,59<br>0,65<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,6Ω<br>tr<br>0,14<br>0,15<br>0,155<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,6Ω<br>td off<br>1,05<br>1,20<br>1,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,6Ω<br>tf<br>0,30<br>0,46<br>0,51<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 11000 A/µs (Tvj= 150°C)<br>RGon= 0,6Ω<br>Eon<br>240<br>330<br>370<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1600 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 3250 V/µs (Tvj= 150°C)<br>RGoff= 0,6Ω<br>Eoff<br>420<br>570<br>600<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>7500<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>11,6 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>15,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Modul IGBT-Module FZ1600R17HP4_B2 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1600|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3200|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|630<br>595|||kA²s<br>kA²s| |Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|2400|||kW| |Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 1600 A, VGE= 0 V<br>IF= 1600 A, VGE= 0 V<br>IF= 1600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||2000<br>2350<br>2400||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 1600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||450<br>740<br>840||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||300<br>520<br>590||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||15,9|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||16,0||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�WB approved�by:�IB date�of�publication:�2016-01-21 revision:�V3.1 3 IGBT-Modul IGBT-Module FZ1600R17HP4_B2 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||AlSiC|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||32,2<br>32,2<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,1<br>19,1<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||9,0||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,15||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||800||g| prepared�by:�WB date�of�publication:�2016-01-21 approved�by:�IB revision:�V3.1 4 ## Technische�Information�/�Technical�Information ## IGBT-Modul IGBT-Module FZ1600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3200 3200<br>Tvj = 25°C VGE = 20V<br>2800 TTvj vj = 125°C = 150°C 2800 VVGE GE = 15V = 12V<br>VGE = 10V<br>VGE = 9V<br>VGE = 8V<br>2400 2400<br>2000 2000<br>1600 1600<br>1200 1200<br>800 800<br>400 400<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.6� Ω ,�RGoff�=�0.6� Ω ,�VCE�=�900�V **==> picture [489 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 3200 1400<br>Tvj = 25°C Eon, Tvj = 125°C<br>2800 TTvj vj = 125°C = 150°C EEonoff, T, Tvjvj = 150°C = 125°C<br>1200 E off , T vj = 150°C<br>2400<br>1000<br>2000<br>800<br>1600<br>600<br>1200<br>400<br>800<br>200<br>400<br>0 0<br>5 6 7 8 9 10 11 12 13 0 400 800 1200 1600 2000 2400 2800 3200<br>VGE [V] IC [A]<br>prepared�by:�WB date�of�publication:�2016-01-21<br>approved�by:�IB revision:�V3.1<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 ## IGBT-Modul IGBT-Module FZ1600R17HP4_B2 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1600A,V CE =900V<br>2600 100<br>2400 e E E onon, T , T vjvj = 125°C = 150°C I) |SSa ZthJC : IGBT a<br>2200 E E off off , T , T vj vj = 125°C = 150 ° C<br>eth eee eent et<br>2000<br>1800<br>10<br>1600 SSrae<br>a eee<br>1400<br>atl<br>nt [aT]<br>1200<br>1000 y<br>1<br>800<br>600<br>400 i: 1 2 3 4<br>ri[K/kW]: 2,2 6,28 2,1 1,02<br>200 τ i[s]: 0,0016 0,037 0,348 5,9<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =06 Ω ,T vj =150°C<br>4000 3200<br>I C , Modul Tvj = 25°C<br>3600 IC, Chip 2800 TTvj vj = 125°C = 150°C<br>3200<br>2400<br>2800<br>2000<br>2400<br>2000 1600<br>1600<br>1200<br>1200<br>800 [<br>800<br>400<br>400<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Modul IGBT-Module FZ1600R17HP4_B2 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =0.6 Ω ,V CE =900V IF =1600A,V CE =900V<br>900 700<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>800<br>600<br>a \<br>700 2 —_] \\<br>500<br>600 \<br>\<br>\<br>500 400<br>400<br>300<br>300<br>/ 200<br>200 iy<br>100 100<br>0 400 800 1200 1600 2000 2400 2800 3200 0,0 1,0 2,0 3,0 4,0 5,0 6,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [489 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC =f (t) IR =f(V R)<br>Tvj = 150°C<br>100 4000<br>ZthJC : Diode I R , Modul<br>3600<br>eg rr HE A<br>3200<br>2800<br>10 ee LL<br>a ee siiimamntit|<br>EE 2400<br>eeee<br>2000<br>vainmat<br>1600<br>1<br>ee 1200<br>a<br>PO<br>800<br>i: 1 2 3 4<br>ri[K/kW]: 3,52 7,79 3,16 1,43<br>tia! τ i[s]: 0,00141 0,0309 0,233 5,4 400<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module FZ1600R17HP4_B2 **==> picture [86 x 38] intentionally omitted <==** **==> picture [160 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Schaltplan�/�Circuit�diagram<br>**----- End of picture text -----**<br> **==> picture [241 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Gehäuseabmessungen�/�Package�outlines<br>**----- End of picture text -----**<br> **==> picture [74 x 70] intentionally omitted <==** **==> picture [52 x 50] intentionally omitted <==** **==> picture [103 x 57] intentionally omitted <==** **==> picture [53 x 50] intentionally omitted <==** prepared�by:�WB date�of�publication:�2016-01-21 approved�by:�IB revision:�V3.1 8 ## IGBT-Modul IGBT-Module ## FZ1600R17HP4_B2 ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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