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FZ1200R45KL3B5NOSA1
IGBT Module, Single Switch, 1.2 kA, 2.5 V, 13.5 kW, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.2kA; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:13.5kW; Collector Emitter Voltage V(br)ceo:4.5kV;
- SVHC: Lead (25-Jun-2025)
- Product Range: IVH 190
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 13.5kW
- IGBT Configuration: Single Switch
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.2kA
- Power Dissipation Pd: 13.5kW
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 1.2kA
- Collector Emitter Voltage Max: 4.5kV
- Collector Emitter Voltage V(br)ceo: 4.5kV
- Collector Emitter Saturation Voltage: 2.5V
- Collector Emitter Saturation Voltage Vce(on): 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2065.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules FZ1200R45KL3_B5
VCES = 4500V IC nom = 1200A / ICRM = 2400A
## **典型应用**
- 大功率变流器
- • 中压变流器 • 电机传动 • 多电平逆变器
- 大功率变流器
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## **电气特性**
- 高直流稳定性
- • 高短路能力，自限制短路电流
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• High Short Circuit Capability, Self Limiting Short
- 高动态坚固性
- CEsat
- • 沟槽栅IGBT3
- VCEsat
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- CEsat
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- VCEsat
## **机械特性**
-
- AlSiC基板提供更高的温度周次能力
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- 高爬电距离和电气间隙
- 绝缘的基板
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- AlSiC Base Plate for increased Thermal Cycling Capability
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1
## 技术信息�/�Technical�Information IGBT-模块 IGBT-modules FZ1200R45KL3_B5
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FZ1200R45KL3_B5<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MW<br>approvedby:DTS<br>dateofpublication:2013-05-27<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= -40°C<br>Tvj= 25°C<br>Tvj= 125°C<br>VCES<br>4500<br>4500<br>4500<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj= 125°C<br>IC nom<br>1200<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2400<br>A<br>总损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 125°C<br>Ptot<br>13,5<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>VCE sat<br>2,50<br>3,10<br>2,85<br>3,70<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 105 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,4<br>6,0<br>6,6<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 2800V<br>QG<br>39,5<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,75<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>280<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,70<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 4500 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 1200 A, VCE= 2800 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,75<br>0,75<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 1200 A, VCE= 2800 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,30<br>0,30<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 1200 A, VCE= 2800 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>6,60<br>6,90<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 1200 A, VCE= 2800 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,35<br>0,45<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 1200 A, VCE= 2800 V, LS= 110 nH<br>VGE= ±15 V, di/dt = 5000 A/µs (Tvj=125°C)<br>RGon= 0,68Ω<br>Eon<br>4600<br>6150<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 1200 A, VCE= 2800 V, LS= 110 nH<br>VGE= ±15 V, du/dt = 2000 V/µs (Tvj=125°C)<br>RGoff= 5,1Ω<br>Eoff<br>4200<br>5100<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 2800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>6900<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>7,40 K/kW<br>壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,00<br>K/kW||
|preparedby:MW|dateofpublication:2013-05-27|
|---|---|
|approvedby:DTS|revision:3.0|
2
IGBT-模块 IGBT-modules FZ1200R45KL3_B5
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 25°C<br>Tvj= 125°C|VRRM|4500<br>4500<br>4500|4500<br>4500<br>4500||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|1200|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2400|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|570|||kA²s|
|最大耗散功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|2400|||kW|
|最小开通时间<br>Minimumturn-ontime||ton min|10,0|||µs|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||2,50<br>2,50|3,10<br>3,00|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 1200 A, - diF/dt = 5000 A/µs (Tvj=125°C)<br>VR= 2800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||1500<br>1700||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 1200 A, - diF/dt = 5000 A/µs (Tvj=125°C)<br>VR= 2800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1150<br>2100||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 1200 A, - diF/dt = 5000 A/µs (Tvj=125°C)<br>VR= 2800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||1750<br>3550||mJ<br>mJ|
|结－壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||17,0|K/kW|
|壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,0||K/kW|
prepared�by:�MW date�of�publication:�2013-05-27 approved�by:�DTS revision:�3.0
3
IGBT-模块 IGBT-modules
## 技术信息�/�Technical�Information
## FZ1200R45KL3_B5
**==> picture [86 x 38] intentionally omitted <==**
## **模块�/�Module**
|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 10 sec|VISOL|10,2|||kV|
|局部放电熄灭电压<br>Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPD ≤10 pC (acc. to IEC 1287)|VISOL|3,5|||kV|
|DC稳定性<br>DCstability|Tvj= 25°C, 100 fit|VCE D|3000|||V|
|模块基板材料<br>Materialofmodulebaseplate|||AlSiC||||
|内部绝缘材料<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||AlN||||
|爬电距离<br>Creepagedistance|如何与取得联系-散热片/terminaltoheatsink<br>如何与取得联系-如何与取得联系/terminaltoterminal||56,0<br>56,0|||mm|
|电气间隙<br>Clearance|如何与取得联系-散热片/terminaltoheatsink<br>如何与取得联系-如何与取得联系/terminaltoterminal||26,0<br>26,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||18||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||0,12||mΩ|
|最大结温<br>Maximumjunctiontemperature|逆变器,制动-斩波器/inverter,brake-chopper|Tvj max|||125|°C|
|在开关状态下温度<br>Temperatureunderswitchingconditions|逆变器,制动-斩波器/inverter,brake-chopper|Tvj op|-50||125|°C|
|储存温度<br>Storagetemperature||Tstg|-55||125|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M6根据相应的应用手册进行安装<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25|-|5,75|Nm|
|端子联接扭距<br>Terminalconnectiontorque|螺丝M8根据相应的应用手册进行安装<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||1400||g|
Das maximal zulässige du/dt, definiert zwischen 0,6 und 1×Vce, beträgt 2400V/µs. The maximum allowed dv/dt measured between 0,6 and 1×Vce is 2400V/µs.
prepared�by:�MW date�of�publication:�2013-05-27 approved�by:�DTS revision:�3.0
4
## IGBT-模块 IGBT-modules
## FZ1200R45KL3_B5
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>2400 a , 2400 as , _<br>Tvj = 25°C / VGE = 8V / a<br>Tvj = 125°C VGE = 9V<br>2100 Ee 2100 VGE = 10V<br>| IR yer<br>VGE = 12V<br>VGE = 15V<br>1800 1800 VGE = 20V<br>1500 LEP ’ 1500 j |<br> LALR EL) E e<br>1200 iY 1200 Ay f<br>900 900<br>fils<br>Ye) ee<br>600 600<br>/ Mf 2<br>300 300<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =068 Ω ,R Goff =5.1 Ω ,V CE =2800V<br>2400 16000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>EJ<br>2100 14000<br>fF) fe<br>1800 12000<br>1500 10000<br>1200 8000<br>Pitt ty yy Et ee<br>900 6000<br>600 4000<br>300 2000<br>0 0<br>5 6 7 8 9 10 11 12 0 400 800 1200 1600 2000 2400<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules
## FZ1200R45KL3_B5
**==> picture [485 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1200A,V CE =2800V<br>24000 100<br>Eon, Tvj = 125°C i ZthJC : IGBT ee<br>HH— ee<br>Eoff, Tvj = 125°C<br>21000 TELL /{-a—_ —s ] aoo o EETTTee HH} tH<br>18000 PEVL EL LEER) eeem ee ine<br>10<br>15000<br>PYLE[/ ELL |eSPt| T TT 6 TATEheT T TT T T T TT]<br>12000<br>LTE ||<br>9000<br>] EYELET 1 ROSea A TTIKI MOOIT<br>EH INEHAU CM<br>7 eo<br>6000 | VY Tt fT ii<br>LPT EE Ya7 TT aeoT yTTT i: TTT 1 2 g 3 4 |<br>3000 ri[K/kW]: 0,991 4,481 1,048 0,876<br>τ i[s]: 0,005 0,05 0,24 4,27<br>0 0,1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
IC =f(V CE) C=fV CE)<br>VGE =+15V,R Goff =51 Ω ,T vj =125°C VGE =OV,T vj = 25°C,f= 1MHz<br>2500 a ee ee ee ee ee ee 1000 eT<br>[|<br>ee<br>a a eeee ee<br>2000 a<br>100<br>1500 pp<br>eea a eeee eeeee eeeee ee<br>1000<br>10<br>| | | ANERee ee<br>SS<br>IC, Modul<br>500 | IC, Chip a a ed a<br>Cies<br>Coes<br>Cres<br>0 -iTET y LY 1 peeafF a CCCP Pes ee Cra ee ee<br>0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 10 20 30 40 50 60 70 80 90 100<br>VCE [V] VCE [V]<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FZ1200R45KL3_B5
**==> picture [486 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGE =f(Q G) IF =f(V F)<br>IC = 1200 A, T vj =25°C<br>15 2400<br>VCC = 2800V Tvj = 25°C<br>12 Tvj = 125°C<br>ee YE<br>2000<br>9<br>6<br>1600<br>3<br>0 1200<br>-3<br>800<br>-6<br>-9<br>pi yxy] tt (<br>400<br>-12<br>Ann nnn ERE4nnn<br>-15 0<br>0 5 10 15 20 25 30 35 40 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>QG [µC] VF [V]<br>FRIAR RE EB ( BF) FRA MB Res ( BB)<br>switching losses Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>Erec =f (I F) Erec =f(R G)<br>- di F /dt = 5000A/us, V CE = 2800 V IF =1200A,V CE =2800V<br>5000 4500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4500 [ems 4000 (ee<br>4000 etttt| teber] 3500 Fy y yy<br>3500<br>3000<br>Z| to PATE<br>3000<br>2500<br>ane PAREEEEEEE<br>2500<br>2000<br>_A PPP PN<br>2000<br>1500<br>1500 Pf fe Pity | | PRA<br>1000<br>1000 ( PTT [EEE] Ty<br>500 500<br>0 0<br>0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br> [V]<br> [A]<br>VGE IF<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FZ1200R45KL3_B5
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**----- Start of picture text -----**<br>
ZthJC IR R)<br>Tvj = O5°C<br>100 2800<br>ZthJC : Diode IR, Modul<br>e e<br>2400<br>FT LTTE ETT eeETTellET<br>S S S 2000 P y<br>10<br>a es ee eee ee<br>Pe OE<br>MLaer ll 1600 TY) 7] [i<br>YTTTTeee<br>a eeTTT llTTT] 1200 Pt MY Pd<br>1<br>TTaee ee ee ee 800 PNae<br>eeee ell<br>TT<br>e e i: 1 2 3 eee 4 400 PR<br>ri[K/kW]: 3,522 10,19 2,309 1,178<br>τ i[s]: 0,005 0,048 0,247 4,383<br>0,1 AtEEA tococooo ll 0 Pf op<br>0,001 0,01 0,1 1 10 0 1000 2000 3000 4000 5000<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
8
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**----- Start of picture text -----**<br>
技术信息�/�Technical�Information<br>IGBT-模块<br>IGBT-modules FZ1200R45KL3_B5<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>prepared�by:�MW date�of�publication:�2013-05-27<br>approved�by:�DTS revision:�3.0<br>**----- End of picture text -----**<br>
9
IGBT-模块 IGBT-modules
## FZ1200R45KL3_B5
## **使用条件和条款**
## 使用条件和条款
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10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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