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FZ1200R45HL4B8BPSA1
IGBT MODULE, 4.3KV, 1.2KA, PANEL
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (04-Feb-2026)
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1371.99 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FZ1200R45HL4_B8 IHV-B Module** Se Geneon ## **Final datasheet** ## **IHV-B Module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode** ## **Features** - Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High dynamic robustness - High short-circuit capability - Low V CE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient - Mechanical features - Package with CTI > 600 - Standard housing - AlSiC base plate for increased thermal cycling capability - IHV-B housing - Isolated base plate ## **Potential applications** - High-power converters - Medium-voltage converters - Power transmission and distribution ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2025-10-17 **FZ1200R45HL4_B8 IHV-B Module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**6**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**7**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| Datasheet Revision 1.00 2025-10-17 2 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||6.0|kV| |Partial discharge<br>extinction voltage|_V_isol|RMS, f = 50 Hz, QPD≤ 10 pC|||3.5|kV| |DC stability|_V_CE(D)|Tvj= 25 °C, 100 Fit|||2900|V| |Material of module<br>baseplate|||||AlSiC|| |Comparative tracking<br>index|_CTI_||||> 600|| **Table 2 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||9||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC= 25 °C, per switch|||0.12||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||0.14||mΩ| |Storage temperature|_T_stg|||-40||150|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M6, Screw|4.25||5.75|Nm| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M4, Screw|1.8||2.1|Nm| ||||M8, Screw|8||10|| |Weight|_G_||||800||g| ## **2 IGBT, Inverter** |**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**||||| |---|---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= -40 °C||4300|V| ||||_T_vj= 150 °C||4500|| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_C= 100 °C||1200|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op|||2400|A| |Gate-emitter peak voltage|_V_GES||||±20|V| Datasheet Revision 1.00 2025-10-17 3 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 1200 A,_V_GE= 15 V|_T_vj= 25 °C||2.35|2.80|V| ||||_T_vj= 125 °C||2.85|3.40|| ||||_T_vj= 150 °C||2.95|3.50|| |Gate threshold voltage|_V_GEth|_I_C= 99 mA, VCE= VGE,_T_vj=|25 °C|5.50|6.00|6.50|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 2800 V, Tvj= 25 °C|||31||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.19||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||198||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||3.6||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 4500 V,_V_GE= 0 V|_T_vj= 25 °C|||5|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||400|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 1200 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gon= 1.1 Ω|_T_vj= 25 °C||0.260||µs| ||||_T_vj= 125 °C||0.290||| ||||_T_vj= 150 °C||0.310||| |Rise time (inductive load)|_t_r|_I_C= 1200 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gon= 1.1 Ω|_T_vj= 25 °C||0.210||µs| ||||_T_vj= 125 °C||0.230||| ||||_T_vj= 150 °C||0.230||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 1200 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gof= 7 Ω|_T_vj= 25 °C||6.600||µs| ||||_T_vj= 125 °C||6.950||| ||||_T_vj= 150 °C||7.050||| |Fall time (inductive load)|_t_f|_I_C= 1200 A,_V_CC= 2800 V,<br>_V_GE= ±15 V,_R_Gof= 7 Ω|_T_vj= 25 °C||1.150||µs| ||||_T_vj= 125 °C||2.150||| ||||_T_vj= 150 °C||2.450||| |Turn-on time (resistive<br>load)|_t_on_R|_I_C= 500 A,_V_CC= 2000 V,<br>_V_GE= ±15 V,_R_Gon= 1.1 Ω|_T_vj= 25 °C|0.98|||µs| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 1200 A,_V_CC= 2800 V,<br>_L_σ= 110 nH,_V_GE= ±15 V,<br>_R_Gon= 1.1 Ω, di/dt =<br>4350 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3850||mJ| ||||_T_vj= 125 °C||5400||| ||||_T_vj= 150 °C||6050||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 1200 A,_V_CC= 2800 V,<br>_L_σ= 110 nH,_V_GE= ±15 V,<br>_R_Gof= 7 Ω, dv/dt = 1250<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||4700||mJ| ||||_T_vj= 125 °C||6000||| ||||_T_vj= 150 °C||6450||| **(table continues...)** Datasheet Revision 1.00 2025-10-17 4 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |SC data|_I_SC|_V_GE= 15 V,_V_CC= 3000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj= 150 °C||5400||A| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||10.8|K/kW| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)|||5.40||K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= -40 °C|4300|V| ||||_T_vj= 150 °C|4500|| |Continuous DC forward<br>current|_I_F|||1200|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||2400|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|415|kA²s| ||||_T_vj= 150 °C|380|| |Maximum power<br>dissipation|_P_RQM||_T_vj= 150 °C|2650|kW| |Minimum turn-on time|_t_onmin|||10|µs| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 1200 A,_V_GE= 0 V|_T_vj= 25 °C||2.60|3.05|V| ||||_T_vj= 125 °C||2.50|2.95|| ||||_T_vj= 150 °C||2.45|2.90|| |Peak reverse recovery<br>current|_I_RM|_V_CC= 2800 V,_I_F= 1200 A,<br>_V_GE= -15 V, -diF/dt =<br>4350 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1600||A| ||||_T_vj= 125 °C||1750||| ||||_T_vj= 150 °C||1750||| ## **(table continues...)** Datasheet Revision 1.00 2025-10-17 5 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Recovered charge|_Q_r|_V_CC= 2800 V,_I_F= 1200 A,<br>_V_GE= -15 V, -diF/dt =<br>4350 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1050||µC| ||||_T_vj= 125 °C||2050||| ||||_T_vj= 150 °C||2400||| |Reverse recovery energy|_E_rec|_V_CC= 2800 V,_I_F= 1200 A,<br>_V_GE= -15 V, -diF/dt =<br>4350 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1550||mJ| ||||_T_vj= 125 °C||3450||| ||||_T_vj= 150 °C||4050||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||19.1|K/kW| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||7.95||K/kW| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet Revision 1.00 2025-10-17 6 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 2400 2400<br>2000 2000<br>1600 1600<br>1200 1200<br>800 800<br>400 400<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Gate charge characteristic (typical), IGBT, Inverter<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 1200 A, Tvj = 25 °C<br>2400 15<br>12<br>2000 10<br>8<br>1600 5<br>2<br>1200 0<br>-2<br>800 -5<br>-8<br>400 -10<br>-12<br>0 -15<br>5 6 7 8 9 10 11 12 13 0 4 8 12 16 20 24 28 32<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-10-17 7 **FZ1200R45HL4_B8 IHV-B Module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Capacity characteristic (typical), IGBT, Inverter** ## C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.1 1 10 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** ## t = f(RG) VGE = ±15 V, IC = 1200 A, VCC = 2800 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** ## t = f(IC) RGoff = 7 Ω, RGon = 1.1 Ω, VGE = ±15 V, VCC = 2800 V, T = 150 °C vj **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 400 800 1200 1600 2000 2400<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, Inverter** E = f(IC) RGoff = 7 Ω, RGon = 1,1 Ω, VGE = ±15 V, VCC = 2800 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16000<br>15000<br>14000<br>13000<br>12000<br>11000<br>10000<br>9000<br>8000<br>7000<br>6000<br>5000<br>4000<br>3000<br>2000<br>1000<br>0<br>0 400 800 1200 1600 2000 2400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-10-17 8 **FZ1200R45HL4_B8 IHV-B Module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, Inverter** ## E = f(RG) IC = 1200 A, VGE = ±15 V, VCC = 2800 V **Reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) RGoff = 7 Ω, VGE = ±15 V, VCC ≤ 3000 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15000<br>13500<br>12000<br>10500<br>9000<br>7500<br>6000<br>4500<br>3000<br>1500<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, Inverter** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2800<br>2400<br>2000<br>1600<br>1200<br>800<br>400<br>0<br>0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, Inverter** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2400<br>2000<br>1600<br>1200<br>800<br>400<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-10-17 9 **FZ1200R45HL4_B8 IHV-B Module** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), Diode, Inverter** Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) **Switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 2800 V, IF = 1800 A **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 6000 6000<br>5000 5000<br>4000 4000<br>3000 3000<br>2000 2000<br>1000 1000<br>0 0<br>0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>Safe operating area (SOA), Diode, Inverter Transient thermal impedance, Diode, Inverter<br>IR = f(VR) Zth = f(t)<br>T = 150 °C<br>vj<br>2800 100<br>2400<br>2000<br>10<br>1600<br>1200<br>1<br>800<br>400<br>0 0.1<br>0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2025-10-17 10 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Circuit diagram** **5 Circuit diagram** **Figure 1** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Package outlines<br>**----- End of picture text -----**<br> **==> picture [79 x 75] intentionally omitted <==** **==> picture [56 x 53] intentionally omitted <==** **==> picture [110 x 61] intentionally omitted <==** **==> picture [57 x 53] intentionally omitted <==** **Figure 2** Datasheet Revision 1.00 2025-10-17 11 **FZ1200R45HL4_B8 IHV-B Module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Module label code** ## **7 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2025-10-17 12 **FZ1200R45HL4_B8 IHV-B Module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2025-06-27|Target datasheet| |0.20|2025-09-19|Preliminary datasheet| |1.00|2025-10-17|Final datasheet| Datasheet Revision 1.00 2025-10-17 13 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2025-10-17 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2025 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABO303-003** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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