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FZ1200R33HE3BPSA1
IGBT Module, Single Switch, 1.2 kA, 2.7 V, 13 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1.2kA; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:13kW; Collector Emitter Voltage V(br)ceo:3.3kV; Transis
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 13kW
- IGBT Configuration: Single Switch
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1.2kA
- Power Dissipation Pd: 13kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.2kA
- Collector Emitter Voltage Max: 3.3kV
- Collector Emitter Voltage V(br)ceo: 3.3kV
- Collector Emitter Saturation Voltage: 2.7V
- Collector Emitter Saturation Voltage Vce(on): 2.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1455.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules FZ1200R33HE3
VCES = 3300V IC nom = 1200A / ICRM = 2400A
- Chopper-Anwendungen
- Mittelspannungsantriebe
- Motorantriebe
- Traktionsumrichter
- USV-Systeme
- Windgeneratoren
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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom
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- CEsat
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- T
- VCEsat
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- High Short Circuit Capability, Self Limiting Short
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- CEsat
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- T
- VCEsat
- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit
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- AlSiC Base Plate for increased Thermal Cycling Capability
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> IGBT-ModuleIGBT-modules FZ1200R33HE3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,Wechselrichter�/�IGBT,Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FZ1200R33HE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:SB<br>approvedby:DTS<br>dateofpublication:2013-12-11<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= -40°C<br>Tvj= 150°C<br>VCES<br>3300<br>3300<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 150°C<br>IC nom<br>1200<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150°C<br>Ptot<br>13,0<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>VCE sat<br>2,70<br>3,15<br>3,30<br>3,20<br>3,60<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 54,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 1800V<br>QG<br>32,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,44<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>210<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 3300 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,3Ω, CGE= 220 nF<br>td on<br>0,60<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,3Ω, CGE= 220 nF<br>tr<br>0,55<br>0,55<br>0,55<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 2,4Ω, CGE= 220 nF<br>td off<br>3,00<br>3,20<br>3,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1200 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 2,4Ω, CGE= 220 nF<br>tf<br>0,30<br>0,35<br>0,35<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1200 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, di/dt = 4300 A/µs (Tvj= 150°C)<br>RGon= 0,62Ω, CGE= 220 nF<br>Eon<br>1400<br>1950<br>2200<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1200 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, du/dt = 2100 V/µs (Tvj= 150°C)<br>RGoff= 2,4Ω, CGE= 220 nF<br>Eoff<br>1350<br>1800<br>1950<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>4800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>9,55 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>10,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules FZ1200R33HE3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 150°C|VRRM|3300<br>3300|3300<br>3300||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1200|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|330<br>310|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|1800|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||3,25<br>2,90<br>2,80|3,95<br>3,35|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1200 A, - diF/dt = 4300 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1250<br>1400<br>1450||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1200 A, - diF/dt = 4300 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||550<br>1100<br>1300||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1200 A, - diF/dt = 4300 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||550<br>1250<br>1500||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||17,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||11,5||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�SB date�of�publication:�2013-12-11 approved�by:�DTS revision:�3.1
3
IGBT-Module IGBT-modules
## FZ1200R33HE3
|Modul / Module||||||||
|---|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Teilentladungs-Aussetzspannung<br>Kollektor-Emitter-Gleichsperrspannung<br>~~Isolation test voltage~~<br>~~Partial discharge extinction voltage ~~<br>~~DC stability~~|RMS, f = 50 Hz, t = 1 min.<br>RMS, f = 50 Hz, QPD ≤10 pC (acc. to IEC 1287)<br>Tvj= 25°C, 100 fit<br>~~ee ~~<br> ~~ee ~~<br>~~iY~~||VISOL<br>VISOL<br>VCE D<br> ~~ee~~<br> ~~ee~~||6,0<br>2,6<br>2100||kV<br>kV<br>V|
|Material Modulgrundplatte<br>Material of module baseplate|||||AlSiC|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||32,2||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||19,1||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index|||CTI||> 600|||
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~||LsCE<br> ~~ee~~|min.|typ.<br>max.<br>6,0<br>~~ee~~||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch||RCC'+EE'||0,12||mΩ|
|Module lead resistance, terminals - chip||||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note||Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>4,25<br>-<br>5,75<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note||M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight|||G||1200||g|
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## IGBT-Module IGBT-modules
## FZ1200R33HE3
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>2400 2400<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12V<br>2000 2000 VGE = 10V<br>VGE = 9V<br>VGE = 8V<br>1600 1600<br>1200 1200<br>800 800<br>ue fr<br>“ wa<br>400 /| 400 Ce AeJo be<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =062 Ω ,R Goff =24 Ω ,V CE =1800V,C GE =220<br>nF<br>2400 8000<br>Tvj = 25°C Eon, Tvj = 150°C<br>Tvj = 125°C Eon, Tvj = 125°C<br>Tvj = 150°C 7000 Eoff, Tvj = 150°C<br>2000 Eoff, Tvj = 125°C<br>6000<br>1600<br>5000<br>1200 4000<br>3000<br>800<br>f WA :<br>2000<br>400<br>Z a Ane<br>1000<br>LiF<br>y<br>0 0<br>5 6 7 8 9 10 11 12 13 0 400 800 1200 1600 2000 2400<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## FZ1200R33HE3
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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =1200A,V CE =1800V,C GE =220nF<br>12000 100<br>Eon, Tvj = 150°C / ’ a“ i HH— ZthJC : IGBT EEa HH} tH<br>Eon, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>10000 E Eoff, Tvj = 125°C vz 7 7 oo PTU===_——TTo T 0... TTT S00; oessana<br>8000 ~ AT | 10 onion no<br>T Y UUM UTMUTNE<br>/ SES<br>, oS ee<br>PT TTT TT<br>6000 J. , |<br>LZ Pf HE fff<br>4000 Vanna 1 BO ALaRTTTIOMRAAIIMH<br>YZv[i VYVAVAT7t TtTT hyeeeAITTTTLIME CTT<br>7 Zoo<br>. Y [| Tt Tt Titi tt TT<br>Vana PT TTT<br>2000<br>i: 1 2 3 4<br>ri[K/kW]: 1,3 5,03 1,898 1,303<br>τ i[s]: 0,003 0,042 0,256 4,984<br>0 0,1<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =+15V,R Goff =2.4 Ω ,T vj =150°C,C GE =220nF<br>3000 2400<br>IC, Modul Tvj = 150°C<br>IC, Chip Tvj = 125°C<br>Tvj = 25°C<br>2000<br>2400<br>1600<br>1800<br>1200<br>1200<br>800<br>600<br>400<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## FZ1200R33HE3
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Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =1800V IF =1200A,V CE =1800V<br>2400 | 2400 LSES |<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>2000 2000<br>1600 1600<br>1200 1200<br>/ ™~<br>800 800<br>400 400<br>0 0<br>0 400 800 1200 1600 2000 2400 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJC = f (t) IR =f(V R)<br>Tvj = 150°C<br>100 3000<br>et ———<br>ZthJC : Diode IR, Modul<br>H—ooFe e eee o i<br>rT TT T T TT<br>2400<br>EE An Tn =<br>10 eeSemill<br>2 ee<br>Pett 1800<br>Pt ee eee<br>a<br>200<br>1200<br>1<br>ee<br>Poeee<br>rT TT TT TT 600<br>i: 1 2 3 4<br>ri[K/kW]: 3,162 8,208 3,651 1,977<br>τ i[s]: 0,002 0,036 0,252 5,587<br>0,1 CHT roo f 0 PEt ELL |.<br>0,001 0,01 0,1 1 10 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br>
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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FZ1200R33HE3<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
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prepared�by:�SB date�of�publication:�2013-12-11<br>approved�by:�DTS revision:�3.1<br>**----- End of picture text -----**<br>
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FZ1200R33HE3
## **Nutzungsbedingungen**
application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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