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FZ1200R12HE4HOSA2
IGBT Module, Dual, 1.825 kA, 1.75 V, 7.15 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 7.15kW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 1.825kA
- Power Dissipation Pd: 7.15kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1.825kA
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 544.74 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## FZ1200R12HE4 **==> picture [128 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 1200V<br>IC nom = 1200A / ICRM = 2400A<br>**----- End of picture text -----**<br> - Hochleistungsumrichter • - • Motorantriebe • **==> picture [274 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> • •<br>• Niedrige Schaltverluste •<br>Mechanische Eigenschaften<br>• Gehause mit CTI > 400 •<br>• Hohe Leistungsdichte •<br>• •<br>**----- End of picture text -----**<br> **==> picture [23 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Digit<br>**----- End of picture text -----**<br> 1 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FZ1200R12HE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FZ1200R12HE4<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:WB<br>approvedby:IB<br>dateofpublication:2015-09-29<br>revision:V2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>1200<br>1825<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>7,15<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 45,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>9,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,6<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>74,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,41<br>0,46<br>0,46<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,20<br>0,20<br>0,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>td off<br>0,82<br>0,93<br>0,96<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>tf<br>0,11<br>0,14<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1200 A, VCE= 600 V, LS= 54 nH<br>VGE= ±15 V, di/dt = 5900 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>115<br>155<br>175<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1200 A, VCE= 600 V, LS= 54 nH<br>VGE= ±15 V, du/dt = 2750 V/µs (Tvj= 150°C)<br>RGoff= 0,62Ω<br>Eoff<br>145<br>180<br>195<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>4800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>21,0 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>13,5<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 > IGBT-ModulIGBT-Module FZ1200R12HE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1200|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2400|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|195<br>190|||kA²s<br>kA²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,75<br>1,70|2,35|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1200 A, - diF/dt = 5900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||535<br>755<br>805||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 1200 A, - diF/dt = 5900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||110<br>220<br>250||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1200 A, - diF/dt = 5900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||50,0<br>105<br>120||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||35,0|K/kW| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,3||K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�WB approved�by:�IB date�of�publication:�2015-09-29 revision:�V2.4 3 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FZ1200R12HE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||32,0<br>32,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||9,0||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,17||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,7<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||1300||g| prepared�by:�WB date�of�publication:�2015-09-29 approved�by:�IB revision:�V2.4 4 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FZ1200R12HE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **==> picture [237 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2400<br>Tvj = 25°C<br>2100 TTvj vj = 125°C = 150°C<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [237 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2400<br>VGE =19 V<br>VGE = 17V<br>2100 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>VGE = 9V<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.6� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V **==> picture [489 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 2400 600<br>Tvj = 25°C Eon, Tvj = 125°C<br>2100 TTvj vj = 125°C = 150°C 550 E E on off , T , T vj vj = 150°C = 125°C<br>500 Eoff, Tvj = 150°C<br>1800 450<br>400<br>1500<br>350<br>1200 300<br>250<br>900<br>200<br>600 150<br>100<br>300<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 400 800 1200 1600 2000 2400<br>VGE [V] IC [A]<br>prepared�by:�WB date�of�publication:�2015-09-29<br>approved�by:�IB revision:�V2.4<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FZ1200R12HE4 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1200A,V CE =600V<br>1400 rs | 100 Lj| |<br>1300 EEonon, T, Tvjvj = 125°C = 150°C HE Z thJC : IGBT<br>Po<br>Eoff, Tvj = 125°C<br>1200 E off , T vj = 150°C<br>1100 Cs J<br>1000<br>900<br>800<br>700 P| of | | 4 10 palLE FFT TTT]<br>600<br>yy, VA<br>500 H<br>Y<br>400<br>300<br>200 i: 1 2 3 4<br>ri[K/kW]: 1,5828 16,88475 1,65525 0,7245<br>τ i[s]: 0,001 0,0365 0,2667 4,0162<br>100<br>0 1<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** **==> picture [486 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC=f(VCE)=f(dI/dtmax‚LS+LSCE WV CE=1200V-LSCE*dI/dtmax)<br>VGE =415V,R Goff =062 Ω ,T vj =150°C<br>2600 2400<br>Ic, Chip Tvj = 25°C<br>2400 I ICC , Modul dI/dt=6kA/us , Modul dI/dt=9kA/us 2100 TTvj vj = 125°C = 150°C<br>2200 IC, Modul dI/dt=12kA/us<br>2000<br>1800<br>1800 i!<br>1600 i a 1500<br>1400 i!<br>1200<br>i!<br>1200 a<br>a<br>1000 900<br>| /<br>800 Ha vf<br>600<br>600<br>i<br>400<br>300<br>200<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Modul IGBT-Module ## FZ1200R12HE4 **==> picture [488 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =1.6 Ω ,V CE =600V IF =1200A,V CE =600V<br>160 140<br>EErecrec, T, Tvjvj = 125°C = 150°C 130 EErecrec, T, Tvjvj = 125°C = 150°C<br>140<br>120<br>110<br>120<br>100<br>yo a \\<br>90<br>100<br>80<br>yo+2 \\ ;<br>80 7 70<br>7<br>/ 60<br>60 /<br>50<br>/<br>/ 40 ~~<br>40<br>30<br>20<br>20<br>10<br>0 0<br>0 400 800 1200 1600 2000 2400 0,0 2,0 4,0 6,0 8,0 10,0 12,0 14,0 16,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter<br>transient thermal impedance Diode, Inverter<br>ZthJC = f(t)<br>100<br>Seria Z thJC : Diode ti at<br>10<br>i: 1 2 3 4<br>ri[K/kW]: 2,90835 4,69065 25,59 1,4145<br>τ i[s]: 0,0004 0,0078 0,0389 1,1775<br>1<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [313 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-ModulIGBT-Module FZ1200R12HE4<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data Schaltplan�/�Circuit�diagram** **==> picture [241 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Gehäuseabmessungen�/�Package�outlines<br>**----- End of picture text -----**<br> **==> picture [67 x 62] intentionally omitted <==** **==> picture [34 x 32] intentionally omitted <==** **==> picture [61 x 58] intentionally omitted <==** **==> picture [43 x 41] intentionally omitted <==** **==> picture [122 x 47] intentionally omitted <==** **==> picture [44 x 42] intentionally omitted <==** **==> picture [320 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�WB date�of�publication:�2015-09-29<br>approved�by:�IB revision:�V2.4<br>**----- End of picture text -----**<br> 8 **==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## FZ1200R12HE4 ## **Nutzungsbedingungen** application. 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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