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FZ1000R33HE3BPSA1
IGBT Module, Single Switch, 1 kA, 2.55 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:1kA; Collector Emitter Saturation Voltage Vce(on):2.55V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:3.3kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- Product Range: IHM-B
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: -
- IGBT Configuration: Single Switch
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 1kA
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1kA
- Collector Emitter Voltage Max: 3.3kV
- Collector Emitter Voltage V(br)ceo: 3.3kV
- Collector Emitter Saturation Voltage: 2.55V
- Collector Emitter Saturation Voltage Vce(on): 2.55V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1483.35 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules ## FZ1000R33HE3 VCES = 3300V IC nom = 1000A / ICRM = 2000A ## **典型应用** - 斩波应用 - • 中压变流器 • 电机传动 • 牵引变流器 • UPS系统 • 风力发电机 - - - - - - ## **电气特性** - 高直流电压稳定性 - • 高短路能力，自限制短路电流 - - High Short Circuit Capability, Self Limiting Short - 低开关损耗 - CEsat - • 无与伦比的坚固性 • T - VCEsat - - CEsat - - T vjop - • VCEsat ## **机械特性** - 碳化硅铝（AlSiC）基板提供更高的温度循环能力 - - - 绝缘的基板 • AlSiC Base Plate for increased Thermal Cycling Capability - - - 1 > IGBT-模块IGBT-modules FZ1000R33HE3 ## 技术信息�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** |技术信息/TechnicalInformation<br>FZ1000R33HE3<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:SB<br>approvedby:DTS<br>dateofpublication:2013-12-11<br>revision:3.1<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= -40°C<br>Tvj= 150°C<br>VCES<br>3300<br>3300<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 150°C<br>IC nom<br>1000<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2000<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150°C<br>Ptot<br>11,5<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>VCE sat<br>2,55<br>3,00<br>3,15<br>3,10<br>3,45<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 48,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 1800V<br>QG<br>28,0<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,63<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>190<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,00<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 3300 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 1000 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,5Ω, CGE= 220 nF<br>td on<br>0,60<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 1000 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,5Ω, CGE= 220 nF<br>tr<br>0,55<br>0,55<br>0,55<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 1000 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 2,3Ω, CGE= 220 nF<br>td off<br>3,00<br>3,20<br>3,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 1000 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 2,3Ω, CGE= 220 nF<br>tf<br>0,30<br>0,35<br>0,35<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 1000 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 0,71Ω, CGE= 220 nF<br>Eon<br>1250<br>1700<br>1950<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 1000 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, du/dt = 2100 V/µs (Tvj= 150°C)<br>RGoff= 2,3Ω, CGE= 220 nF<br>Eoff<br>1050<br>1400<br>1550<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>4200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>11,0 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,5<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ1000R33HE3 **==> picture [86 x 38] intentionally omitted <==** ## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 150°C|VRRM|3300<br>3300|3300<br>3300||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|1000|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2000|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|260<br>245|||kA²s<br>kA²s| |最大损耗功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|1600|||kW| |最小开通时间<br>Minimumturn-ontime||ton min|10,0|||µs| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||3,10<br>2,75<br>2,65|3,85<br>3,25|V<br>V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 1000 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1000<br>1200<br>1250||A<br>A<br>A| |恢复电荷<br>Recoveredcharge|IF= 1000 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||450<br>900<br>1050||µC<br>µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 1000 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||450<br>1100<br>1300||mJ<br>mJ<br>mJ| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||20,0|K/kW| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||16,5||K/kW| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�SB date�of�publication:�2013-12-11 approved�by:�DTS revision:�3.1 3 IGBT-模块 IGBT-modules ## FZ1000R33HE3 |#tk | Module|||||| |---|---|---|---|---|---| |绝缘测试电压<br>局部放电停止电压<br>~~Isolation test voltage~~<br>~~Partial discharge extinction voltage ~~<br>DC faett<br>DC stability|RMS, f = 50 Hz, t = 1 min.<br>RMS, f = 50 Hz, QPD ≤10 pC (acc. to IEC 1287)<br>Tvj= 25°C, 100 fit<br>~~ee ~~<br> ~~ee ~~|VISOL<br>VISOL<br>VCE D<br> ~~ee~~<br> ~~ee~~||6,0<br>2,6<br>2100|kV<br>kV<br>V| |模块基板材料<br>爬电距离<br>~~Material of module baseplate ~~<br>Creepage distance|~~ee ~~<br>im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|~~ee~~||AlSiC<br>32,2<br>~~ee~~|mm| |电气间隙<br>Clearance|im-BEXH /terminaltoheatsink<br>iim F-Um / terminal to terminal|||19,1|mm| |相对电痕指数<br>~~Comperative tracking index~~|~~ee ~~|CTI<br> ~~ee~~|min.|> 400<br>typ.<br>max.<br>~~ee~~|| |杂散电感,模块||LsCE||9,0|nH| |模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,19<br>Tstg<br>-40<br>150<br>M<br>4,25<br>-<br>5,75<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm| |端子联接扭距<br>Terminal<br>connection torque|BeeM4AHEAD AVAY OV EAETR<br>ScrewM4 -Say aSmevalid application note<br>$e MS HEAR VAY bv AEADE<br>TT<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-<br>2,1<br>10|Nm<br>Nm| |重量<br>Weight||G||800|g| 4 ## IGBT-模块 IGBT-modules ## FZ1000R33HE3 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>2000 2000<br>Tvj = 25°C VGE = 20V<br>1800 Tvj = 125°C 1800 VGE = 15V<br>F Tvj = 150°C LO) P VGE = 12V eo<br>VGE = 10V<br>1600 1600 VGE = 9V<br>VGE = 8V<br>mo Va © ICP<br>1400 1400<br>CCC oe e ae<br>1200 1200 LT ee<br>1000 1000<br>PPT TT [VEE)]<br>800 BOGS 800<br>e Geen ee cenee Leeneene<br>600 600<br>PPECVRELE OLEeC<br>pt ye /<br>400 400<br>SEE, ZeeeeeeeeLye<br>200 200<br>Pli4tT<br>0 0<br>it it | LA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [489 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =071 Ω ,R Goff =23 Ω ,V CE =1800V,C GE =220<br>nF<br>2000 7000<br>Tvj = 25°C Eon, Tvj = 150°C<br>1800 Tvj = 125°C Eon, Tvj = 125°C<br>Tvj = 150°C 6000 Eoff, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>1600<br>r e e E<br>5000<br>1400<br>1200<br>pt | ttt fs | y<br>4000<br>1000<br>3000<br>800<br>| |} tA | y be<br>600<br>pt} | YE 2000 ca<br>400<br>pt} tA ger<br>1000<br>200<br>pt r]<br>| at | TTT<br>0 0<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200 1400 1600 1800 2000<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-模块 IGBT-modules ## FZ1000R33HE3 **==> picture [486 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> switchingFFRIRE IGBT,losses HAIGBT,Inverter( A) (typical) transientBeASTARAithermalIGBT, iimpedance 3535 IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1000A,V CE =1800V,C GE =220nF<br>10000 i Eon, Tvj = 150°C Yo.‘ 100 | U== Z =_—— thJC : IGBT ee0... S00; oes sana<br>9000 Eon, Tvj = 125°C ly | Ayz | | HH— ror eEE eeHH} tHee<br>Eoff, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>80007000 Ee PTT.) VEEL 4 l/s PTa | TT TT a | |<br>CUA TAM VTE ELT<br>10<br>ee<br>6000 ; i<br>5000 Pf | AR]’ pt fd eePT TT |<br>7, Et<br>4000<br>1<br>3000 PAT/ ‘ | tt EEEaa A|<br>) A<br>2000 aned : ee PTPT TT TTTTee eee<br>i: 1 2 3 4<br>1000 r τ ii[K/kW]: [s]: 1,36 0,002 5,618 0,036 2,629 0,227 1,49 4,942<br>0 0,1<br>0 1 2 3 4 5 6 7 8 9 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rie22LF K IGBT, #3825 ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =2.3 Ω ,T vj =150°C,C GE =220nF<br>2500 IC Ld , Modul 2000 S Tvj S = 150°C | / |:ji :<br>IC, Chip 1800 Tvj = 125°C<br>Tvj = 25°C<br>2000 1600<br>—_ T p | LAD<br>1400<br>1500 1200<br>1000<br>ERE 2a<br>1000 800<br>Sali ee si<br>600<br>500 400<br>Saeeeali P | teaEAYfd<br>Uf Z<br>200<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-模块 IGBT-modules ## FZ1000R33HE3 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon fo, Ω ,V CE =1800V IF = 000A, V CE = 1800 V<br>2000 2000<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>1800 FeLl Erec, Tvj = 125°C 1800 IRF Erec, Tvj = 125°C T<br>1600 1600<br>1400 PE | || peaT]= 1400 ft<br>PPL<br>1200 1200<br>yapei eter] ELT<br>pt ZO<br>1000 1000<br>800 PPYTpet Et 800 eae | |<br>600 2 Ee ey 600 EAR FE<br>waje e e e e ee eePS LT<br>400 400<br>PPE te<br>200 200<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 2 4 6 8 10 12 14<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [489 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC 0 IR R)<br>Tvj = 50°C<br>100 2500<br>Pe —<br>$ ZthJC : Diode F SIP — IR, Modul<br>oro or [L] [ETT]<br>PT E TTTT<br>a TTT]<br>ee el = =<br>a ee 2000<br>ey |<br>10 INLer TE Il<br>1500<br>PT a TT TT TT<br>PATIeea ee ee ll<br>TTI TTT PT<br>LAMM TIT \<br>1000<br>1 PME CINE ETAL TE ~~<br>PT<br>PTTTT<br>PTETT TTT] 500 Pa<br>ey<br>i: 1 2 3 4<br>At Se ri[K/kW]: 2,915 5,496 8,721 || 2,631<br>0,1 LE | ortoco τ i[s]: 0,002 0,017 0,095 c 4,5 l 0 PTE ELL |.<br>0,001 0,01 0,1 1 10 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC [A]IR<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [523 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FZ1000R33HE3<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br> **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�SB date�of�publication:�2013-12-11<br>approved�by:�DTS revision:�3.1<br>**----- End of picture text -----**<br> 8 IGBT-模块 IGBT-modules ## FZ1000R33HE3 ## **使用条件和条款** 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 保留产品规格书的修改权 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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