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FW389-TL-2W
Dual MOSFET, Complementary N and P Channel, 100 V, 2 A, 0.165 ohm, SOIC, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 2.2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.165ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2A
- Power Dissipation N Channel: 2.2W
- Power Dissipation P Channel: 2.2W
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 2A
- Continuous Drain Current Id P Channel: 2A
- Drain Source On State Resistance N Channel: 0.165ohm
- Drain Source On State Resistance P Channel: 0.165ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.867 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Ordering number : ENA2066A ## **FW389** ## **Power MOSFET** ## **100V, 2A, 225m** Ω **,[–] 100V,[–] 2A, 300m** Ω **, Complementary Dual SOIC8** http://onsemi.com ## **Features** - ON-resistance Nch : RDS(on)1=165mΩ(typ.) Pch : RDS(on)1=230mΩ(typ.) - Input Capacitance Nch : Ciss=490pF(typ.) Pch : Ciss=1000pF(typ.) - 4V drive - Halogen free compliance - Protection diode in ## **Specifications** **Absolute Maximum Ratings** at Ta=25°C ~~Rs~~ Parameter Symbol Conditions N-channel P-channel Unit ~~RQ~~ Drain-to-Source Voltage VDSS 100 --100 V ~~eG~~ Gate-to-Source Voltage VGSS ±20 ±20 V ~~es~~ Drain Current (DC) ~~Q~~ ID 2 --2 A ~~Rs~~ Drain Current (PW≤100ms) ~~Qe~~ IDP Duty cycle≤1% 5 --5 A ~~RseeGr~~ Total DissipationDrain Current (PWAllowable Power Dissipation≤10μs) ~~GRG~~ PTIDPPD When mounted on ceramic substrate (2000mmWhen mounted on ceramic substrate (2000mmDuty cycle≤1% 2×0.8mm) 1unit, (PW2×0.8mm), (PW≤≤10s)10s) 81.82.2 --8 WWA ~~Gr~~ Channel Temperature Tch 150 °C ~~rs~~ Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 5.3 5.3 mJ ~~rsGs Gr~~ Avalanche Current *2 IAV 2 --2 A *1 N-Channel:VDD=10V, L=2mH, IAV=2A(Fig.1) P-Channel:VDD=--10V, L=2mH, IAV=--2A(Fig.1) - *2 L≤2mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **lectrical Characteristics** at Ta=25°C |Parameter<br>~~es~~|Symbol<br>~~es~~<br>~~es ee~~|Conditions<br>~~f~~<br>~~es~~<br>~~ee~~|Ratings<br>~~f~~<br>~~es~~<br>~~eeeeer~~|Ratings<br>~~f~~<br>~~es~~<br>~~eeeeer~~|Ratings<br>~~f~~<br>~~es~~<br>~~eeeeer~~|Unit<br>~~es~~| |---|---|---|---|---|---|---| ||||min<br>~~f~~<br>~~es~~<br>~~eee~~|typ<br>~~es~~<br>~~eee~~|max<br>~~es~~<br>~~eer~~|| |[N-channel]<br>~~es ee~~<br>~~eee eer~~<br>~~|~~||||||| |Drain-to-Source Breakdown Voltage<br>~~|~~<br>~~a~~|V(BR)DSS<br>~~|~~<br>~~a~~<br>~~Q~~<br>~~Qe~~|ID=1mA, VGS=0V<br>~~|~~<br>~~a~~|100<br>~~|~~<br>~~a~~|~~|~~<br>~~a~~|~~|~~<br>~~a~~|V<br>~~|~~<br>~~a~~| |Zero-Gate Voltage Drain Current<br>~~Rs~~|IDSS<br>~~Rs~~<br>~~Qe~~|VDS=100V, VGS=0V<br>~~Rs~~|~~Rs~~|~~Rs~~|1<br>~~Rs~~|μA<br>~~Rs~~| |Gate-to-Source Leakage Current<br>~~GG~~<br>~~Rs~~|IGSS<br>~~Qe~~<br>~~GG~~<br>~~Gs~~|VGS=±16V, VDS=0V<br>~~GG~~<br>~~Gs~~|~~GG~~|~~GG~~|±10<br>~~GG~~|μA<br>~~GG~~| |Cutoff Voltage<br>~~Rs~~|VGS(off)<br>~~Gs~~|VDS=10V, ID=1mA<br>~~Gs~~|1.5||2.6|V| |Forward Transfer Admittance<br>~~Rs~~<br>~~RQ~~|| yfs|<br>~~Gs~~<br>~~RQ~~<br>~~Rs~~|VDS=10V, ID=2A<br>~~Gs~~<br>~~QO~~<br>~~ss~~|~~QO~~<br>~~ss~~|2.9<br>~~QO~~<br>~~ss~~|~~QO~~<br>~~ss~~|S<br>~~ss~~| |Static Drain-to-Source On-State Resistance<br>~~ee~~<br>~~ee~~|RDS(on)1<br>~~Rs~~<br>~~Rs~~|ID=2A, VGS=10V<br>~~ss~~<br>|~~ss~~<br>|165<br>~~ss~~<br>|225<br>~~ss~~<br>|mΩ<br>~~ss~~<br>| ||RDS(on)2<br>~~Rs~~<br>~~Rs~~|ID=1A, VGS=4.5V<br>~~ss~~<br>|~~ss~~<br>|180<br>~~ss~~<br>|254<br>~~ss~~<br>|mΩ<br>~~ss~~<br>| ||RDS(on)3<br>~~Rses~~|ID=1A, VGS=4V<br>~~es~~|~~es~~<br>~~es~~|190<br>~~es~~<br>~~ee~~|275<br>~~es~~<br>~~ee~~|mΩ<br>~~es~~<br>~~ee~~| |Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ciss<br>~~es~~|VDS=10V, f=1MHz<br>~~es~~<br>~~ee~~|~~es~~<br>~~es~~<br>~~ee~~|490<br>~~es~~<br>~~ee~~<br>~~ee~~|~~es~~<br>~~ee~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~<br>~~ee~~| |Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Coss<br>~~es~~<br>||~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|34<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Crss<br>~~ee~~||~~es ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Turn-ON Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|td(on)<br>~~ee~~|See specified Test Circuit.<br>~~ee~~|~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.3<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Rise Time<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|tr<br> ~~ee~~||~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|5.4<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~| |Turn-OFF Delay Time<br> <br>~~ee~~<br>~~ee~~<br>~~ee~~|td(off)<br> ~~ee~~||~~ee ~~<br>~~ee~~<br>~~**ee**~~|42<br> ~~ee ~~<br>~~ee~~<br>~~**ee**~~|~~ee ~~<br>~~ee~~<br>~~**ee**~~|ns<br> ~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~| |Fall Time<br>~~ee~~<br>~~ee~~|tf||~~ee ~~<br>~~**ee**~~|26<br> ~~ee ~~<br>~~**ee**~~|~~ee ~~<br>~~**ee**~~|ns<br> ~~ee~~<br>~~eee~~<br>~~ee~~| ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2014 **February, 2014** 21314HK TC-00003093/61312TKIM PA No. A2066-1/8 **FW389** ## Continued from preceding page ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |N-channel]||||||| |Total Gate Charge|Qg|VDS=50V, VGS=10V, ID=2A||10||nC| |Gate-to-Source Charge|Qgs|||1.4||nC| |Gate-to-Drain “Miller” Charge|Qgd|||2.1||nC| |Diode Forward Voltage|VSD|IS=2A, VGS=0V||0.78|1.2|V| |Gata Resistance|Rg|VDS=0V, VGS=0V, f=1MHz|0||12|Ω| |[P-channel]||||||| |Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--100|||V| |Zero-Gate Voltage Drain Current|IDSS|VDS=--100V, VGS=0V|||--1|μA| |Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA| |Cutoff Voltage|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.6|V| |Forward Transfer Admittance|| yfs||VDS=--10V, ID=--2A||4.7||S| |Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--2A, VGS=--10V||230|300|mΩ| ||RDS(on)2|ID=--1A, VGS=--4.5V||240|336|mΩ| ||RDS(on)3|ID=--1A, VGS=--4V||250|355|mΩ| |Input Capacitance|Ciss|VDS=--20V, f=1MHz||1000||pF| |Output Capacitance|Coss|||77||pF| |Reverse Transfer Capacitance|Crss|||47||pF| |Turn-ON Delay Time|td(on)|See specifed Test Circuit.||12||ns| |Rise Time|tr|||16||ns| |Turn-OFF Delay Time|td(off)|||110||ns| |Fall Time|tf|||40||ns| |Total Gate Charge|Qg|VDS=--50V, VGS=--10V, ID=--2A||21||nC| |Gate-to-Source Charge|Qgs|||2.8||nC| |Gate-to-Drain “Miller” Charge|Qgd|||4.4||nC| |Diode Forward Voltage|VSD|IS=--2A, VGS=0V||--0.79|--1.2|V| |Gata Resistance|Rg|VDS=0V, VGS=0V, f=1MHz|0||50|Ω| ## **Fig.1 Unclamped Inductive Switching Test Circuit** [N-channel] [P-channel] **==> picture [482 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> D L D L<br>≥50Ω ≥50Ω<br>RG G FW389 RG G FW389<br>10V0V 50Ω S VDD --10V0V 50Ω S VDD<br>**----- End of picture text -----**<br> No. A2066-2/8 **FW389** ## **Fig.2 Switching Time Test Circuit** [N-channel] **==> picture [156 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> VIN VDD=50V<br>10V<br>0V<br>ID=2A<br>VIN RL=25Ω<br>D VOUT<br>PW=10μs<br>D.C.≤1%<br>G<br>FW389<br>P.G 50Ω S<br>**----- End of picture text -----**<br> **==> picture [226 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS [Nch]<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>Drain-to-Source Voltage, VDS -- V IT16906<br>RDS(on) -- VGS [Nch]<br>450 Ta=25°C<br>400<br>350 2A<br>300<br>250<br>200 ID=1A<br>150<br>100<br>50<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>Gate-to-Source Voltage, VGS -- V IT16908<br>VGS=3.0V<br>3.5V<br>4.0V<br>4.5V<br>6.0V<br>8.0V<br>10.0V<br>Drain Current, ID -- A<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>**----- End of picture text -----**<br> [P-channel] **==> picture [158 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> VIN VDD= --50V<br>0V<br>--10V<br>ID= --2A<br>VIN RL=25Ω<br>D VOUT<br>PW=10μs<br>D.C.≤1%<br>G<br>FW389<br>P.G 50Ω S<br>**----- End of picture text -----**<br> **==> picture [227 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VGS [Nch]<br>10<br>VDS=10V<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>Gate-to-Source Voltage, VGS -- V IT16907<br>RDS(on) -- Ta [Nch]<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>--60 --40 --20 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta -- °C IT16909<br>VGS=4.5V, ID=1.0A<br>VGS=10.0V, ID=2.0A<br>VGS=4.0V, ID=1.0A<br>25°C<br>°C<br>Ta=75<br>°C<br>--25<br>Drain Current, ID -- A<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>**----- End of picture text -----**<br> No. A2066-3/8 **FW389** **==> picture [474 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> 10 | yfs | -- ID [Nch] 10 IS -- VSD [Nch]<br>7 VDS=10V 75 VGS=0V<br>3<br>5<br>2<br>3 1.0<br>7<br>5<br>2<br>3<br>2<br>1.0 0.1<br>7<br>7 5<br>5 3<br>2<br>3 0.01<br>7<br>5<br>2<br>3<br>2<br>0.1 0.001<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Drain Current, ID -- A IT16910 Diode Forward Voltage, VSD -- V IT16911<br>SW Time -- ID [Nch] Ciss, Coss, Crss -- VDS [Nch]<br>100 1000<br>VDD=50V 7 f=1MHz<br>7<br>VGS=10V 5<br>5<br>3<br>2<br>3<br>2 100<br>7<br>5<br>10 td(on) 3<br>7 2<br>5 10<br>7<br>3 5<br>2 3<br>2<br>1.0 1.0<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0 5 10 15 20 25 30<br>Drain Current, ID -- A IT16912 Drain-to-Source Voltage, VDS -- V IT16913<br>VGS -- Qg [Nch] S O A [Nch]<br>10 100<br>VDS=50V 5 [7]<br>9 ID=2A 32<br>8 10<br>5 [7]<br>7 3<br>2<br>6 1.0<br>5 [7]<br>5 3<br>2<br>4 0.1<br>5 [7]<br>3 3 Operation in this<br>2 area is limited by RDS(on).<br>2 0.01 Ta=25°C<br>5 [7] Single pulse<br>1 3 When mounted on ceramic substrate<br>2<br>0 0.001 (2000mm [2] ×0.8mm) 1unit<br>0 2 4 6 8 10 11 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7100<br>Total Gate Charge, Qg -- nC IT16914 Drain-to-Source Voltage, VDS -- V IT16915<br>ID -- VDS [Pch] ID -- VGS [Pch]<br>--8 --8<br>VDS= --10V<br>--7 --7<br>--6 --6<br>--5 --5<br>--4 --4<br>VGS= --3.0V<br>--3 --3<br>--2 --2<br>--1 --1<br>0 0<br>0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5<br>Drain-to-Source Voltage, VDS -- V IT16916 Gate-to-Source Voltage, VGS -- V IT16917<br>IDP=8A(PW≤10μs)<br>ID=2A<br>Ciss<br>td(off)<br>tf<br>Coss<br>tr<br>Crss<br>25°C<br>75°C<br>°C<br>Ta= --25<br>100<br>μs<br>--3.5V<br>DC operation(PW100ms≤10s)<br>10ms<br>1ms<br>--4.5V<br> --4.0V<br>--6.0V<br>--8.0V<br>--10.0V<br>25°C<br>°C<br>Ta=75<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>°C<br>--25<br>| -- S<br>fs<br>y<br>|<br>Source Current, IS -- A<br>Forward Transfer Admittance,<br>Ciss, Coss, Crss -- pF<br>Switching Time, SW Time -- ns<br>Drain Current, ID -- A<br>Gate-to-Source Voltage, VGS -- V<br>Drain Current, ID -- A Drain Current, ID -- A<br>**----- End of picture text -----**<br> No. A2066-4/8 **FW389** **==> picture [226 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> RDS(on) -- VGS [Pch]<br>500<br>Ta=25°C<br>450<br>400<br>--2A<br>350<br>300<br>250 ID= --1A<br>200<br>150<br>100<br>50<br>0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20<br>Gate-to-Source Voltage, VGS -- V IT16918<br>| yfs | -- ID [Pch]<br>100<br>7 VDS= --10V<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10<br>Drain Current, ID -- A IT16920<br>1000 SW Time -- ID [Pch]<br>7 VDD= --50V<br>5 VGS= --10V<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>1.0<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10<br>Drain Current, ID -- A IT16922<br>VGS -- Qg [Pch]<br>--10<br>VDS= --50V<br>--9 ID= --2A<br>--8<br>--7<br>--6<br>--5<br>--4<br>--3<br>--2<br>--1<br>0<br>0 5 10 15 20 25<br>Total Gate Charge, Qg -- nC IT16924<br>td(off)<br>td(on)<br>tr<br>tf<br>°C<br>75<br>°C<br>25<br>°C<br>Ta= --25<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>| -- S<br>fs<br>y<br>|Forward Transfer Admittance,<br>Switching Time, SW Time -- ns<br>Gate-to-Source Voltage, VGS -- V<br>**----- End of picture text -----**<br> **==> picture [229 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> RDS(on) -- Ta [Pch]<br>500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>--60 --40 --20 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta -- °C IT16919<br>IS -- VSD [Pch]<br>--10<br>75 VGS=0V<br>3<br>2<br>--1.0<br>7<br>5<br>3<br>2<br>--0.1<br>7<br>5<br>3<br>2<br>--0.01<br>7<br>5<br>3<br>2<br>--0.001<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Diode Forward Voltage, VSD -- V IT16921<br>Ciss, Coss, Crss -- VDS [Pch]<br>10000<br>7 f=1MHz<br>5<br>3<br>2<br>Ciss<br>1000<br>7<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>0 --5 --10 --15 --20 --25 --30<br>Drain-to-Source Voltage, VDS -- V IT13923<br>S O A [Pch]<br>--100<br>5 [7]<br>3<br>2<br>--10<br>5 [7]<br>3<br>2<br>--1.0<br>7<br>5<br>3<br>2<br>--0.1<br>5 [7]<br>3 Operation in this<br>2 area is limited by RDS(on).<br>--0.01 Ta=25°C<br>7<br>5 Single pulse<br>3 When mounted on ceramic substrate<br>2<br>--0.001 (2000mm [2] ×0.8mm) 1unit<br>--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100 2 3 5 7--100<br>Drain-to-Source Voltage, VDS -- V IT16925<br>IDP= --8A(PW≤10μs)<br>ID= --2A<br>Crss<br>Coss<br>VGS= --4.5V, ID= --1.0A<br>VGS= --10.0V, ID= --1.0A<br>VGS= --4.0V, ID= --1.0A<br>DC operation(PW≤10s)<br>100ms<br>100<br>μs<br>10ms<br>1ms<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>Source Current, IS -- A<br>Ciss, Coss, Crss -- pF<br>Drain Current, ID -- A<br>**----- End of picture text -----**<br> No. A2066-5/8 **FW389** **==> picture [472 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> PD -- Ta [Nch/Pch] PD (FET1) -- PD (FET2) [Nch/Pch]<br>2.4 2.0<br>When mounted on ceramic substrate When mounted on ceramic substrate<br>2.2 (2000mm [2] ×0.8mm), PW≤10s 1.8 (2000mm [2] ×0.8mm), PW≤10s<br>2.0<br>1.6<br>1.8<br>1.4<br>1.6<br>1.4 1.2<br>1.2 1.0<br>1.0 0.8<br>0.8<br>0.6<br>0.6<br>0.4<br>0.4<br>0.2 0.2<br>0 0<br>0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>Ambient Temperature, Ta -- °C IT16926 Allowable Power Dissipation(FET2), PD -- W IT16927<br>EAS -- Ta [Nch/Pch]<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature, Ta -- °C IT14160<br>1unit<br>Total dissipation<br>Allowable Power Dissipation, PD -- W<br>Allowable Power Dissipation(FET1), PD -- W<br>Avalanche Energy derating factor -- %<br>**----- End of picture text -----**<br> No. A2066-6/8 **FW389** **Package Dimensions** FW389-TL-2W **==> picture [61 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> SOIC-8<br>CASE 751CR<br>ISSUE O<br>unit : mm<br>1:Source1<br>2:Gate1<br>3:Source2<br>4:Gate2<br>5:Drain<br>6:Drain<br>7:Drain<br>8:Drain<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [115 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 0.65<br>1.27<br>1.75<br>5.60<br>**----- End of picture text -----**<br> ## **Ordering & Package Information Packing Type:TL Marking** |Device|Package|Shipping| |---|---|---| |FW389-TL-2W|SOIC8,<br>SC-87, SOT-96|2,500<br>pcs. / reel| ## **Electrical Connection** **==> picture [169 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> FW389<br>TL<br>LOT No.<br>**----- End of picture text -----**<br> **==> picture [110 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> 8 7 6 5<br>1 2 3 4<br>**----- End of picture text -----**<br> No. A2066-7/8 **FW389** Note on usage : Since the FW389 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A2066-8/8
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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