Image not available
Illustrative purposes only
FW217A-TL-2W.
Dual MOSFET, N Channel, 35 V, 6 A, 0.03 ohm, SOIC, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.8W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.03ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 35V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6A
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 35V
- Drain Source Voltage Vds P Channel: 35V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.03ohm
- Drain Source On State Resistance P Channel: 0.03ohm
| Delivery and price | |
|---|---|
| Units per pack | 37500 |
| Price | 0.199 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Ordering number : EN8994B FW217A** ~~—_~~ @ **N-Channel Power MOSFET** http://onsemi.com **35V, 6A, 39m** Ω **, Dual SOIC8**
## **Features**
- On-state resistance RDS(on)1=30mΩ (typ.)
- 4.5V drive
- Halogen free compliance
- Protection Diode in
## **Specifi cations**
## **Absolute Maximum Ratings** at Ta=25°C
|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain-to-Source Voltage|VDSS||35|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||6|A|
|Drain Current(PW≤10s)|IDP|Dutycycle≤1%|6.5|A|
|Drain Current(PW≤10μs)|IDP|Dutycycle≤1%|24|A|
|Allowable Power Dissipation|PD|When mounted on ceramic substrate (2000mm<br>2×0.8mm) 1unit, PW≤10s|1.8|W|
|Total Dissipation|PT|When mounted on ceramic substrate (2000mm<br>2×0.8mm), PW≤10s|2.2|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
## **Product & Package Information**
## **Package Dimensions**
**==> picture [464 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
• Package : SOIC8<br>• JEITA, JEDEC : SC-87, SOT-96<br>• Minimum Packing Quantity : 2,500 pcs./reel<br>4.9 FW217A-TL-2W<br>8 5 0.22 Packing Type : TL Marking<br>FW217<br>1 : Source1<br>2 : Gate1 TL<br>A LOT No.<br>1 4 3 : Source2<br>4 : Gate2<br>1.27 0.445 0.254 (GAGE PLANE) 5 : Drain2<br>6 : Drain2 Electrical Connection<br>7 : Drain1<br>8 : Drain1 8 7 6 5<br>SOIC8<br>ESREE ag<br>1 2 3 4<br>6.0 3.9<br>0.375<br>0.715<br>1.375 1.55<br>0.175<br>**----- End of picture text -----**<br>
unit : mm (typ) 7072-001
Semiconductor Components Industries, LLC, 2013 **July, 2013**
61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7
**FW217A**
## **Electrical Characteristics** at Ta=25°C
|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|35|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=35V, VGS=0V|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|1.7||2.6|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=6A||3||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=6A, VGS=10V||30|39|mΩ|
||RDS(on)2|ID=3A, VGS=4.5V||50|70|mΩ|
|Input Capacitance|Ciss|VDS=20V, f=1MHz||470||pF|
|Output Capacitance|Coss|||70||pF|
|Reverse Transfer Capacitance|Crss|||35||pF|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||8||ns|
|Rise Time|tr|||34||ns|
|Turn-OFF Delay Time|td(off)|||31||ns|
|Fall Time|tf|||30||ns|
|Total Gate Charge|Qg|VDS=20V, VGS=10V, ID=6A||10||nC|
|Gate-to-Source Charge|Qgs|||2||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||2||nC|
|Diode Forward Voltage|VSD|IS=6A, VGS=0V||0.84|1.2|V|
## **Switching Time Test Circuit**
**==> picture [156 x 162] intentionally omitted <==**
**----- Start of picture text -----**<br>
VIN VDD=20V<br>10V<br>0V<br>ID=6A<br>VIN RL=3 Ω<br>D VOUT<br>PW=10 μ s<br>D.C. ≤ 1%<br>G<br>FW217A<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>
## **Ordering Information**
|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|FW217A-TL-2W|SOIC8|2,500pcs./reel|Pb Free and Halogen Free|
No.8994-2/7
**FW217A**
**==> picture [226 x 736] intentionally omitted <==**
**----- Start of picture text -----**<br>
ID -- VDS<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>Drain-to-Source Voltage, VDS -- V IT16778<br>RDS(on) -- VGS<br>100<br>Ta=25°C<br>ID=3A<br>80<br>6A<br>60<br>40<br>20<br>0<br>0 2 4 6 8 10 12 14 16<br>Gate-to-Source Voltage, VGS -- V IT16780<br>| yfs | -- ID<br>10<br>VDS=10V<br>7<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Drain Current, ID -- A IT16784<br>SW Time -- ID<br>100<br>VDD=20V<br>7<br>5<br>3<br>2<br>10 td(on)<br>7<br>5<br>3<br>2<br>1.0<br>0.1 2 3 5 7 1.0 2 3 5 7 10<br>Drain Current, ID -- A IT16784<br>VGS=2.5V<br>td(off)<br>tf<br>3.0V<br>tr<br>3.5V<br>°C<br>25<br>°C<br>75<br>°C<br>Ta= --25<br>10.0V 6.0V 4.5V4.0V<br>16.0V<br>Drain Current, ID -- A<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>| -- S<br>fs<br>y<br>|Forward Transfer Admittance,<br>Switching Time, SW Time -- ns<br>**----- End of picture text -----**<br>
**==> picture [227 x 736] intentionally omitted <==**
**----- Start of picture text -----**<br>
ID -- VGS<br>10<br>VDS=10V<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5<br>Gate-to-Source Voltage, VGS -- V IT16779<br>RDS(on) -- Ta<br>100<br>80<br>60<br>40<br>20<br>0<br>--60 --40 --20 0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta -- °C IT16781<br>IS -- VSD<br>10<br>7 VGS=0V<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>7<br>5<br>3<br>2<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>Diode Forward Voltage, VSD -- V IT16783<br>Ciss, Coss, Crss -- VDS<br>1000<br>f=1MHz<br>7<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>0 5 10 15 20 25 30 35<br>Drain-to-Source Voltage, VDS -- V IT16785<br>Ciss<br>Coss<br>Crss<br>VGS=10.0V, ID=6.0A<br>VGS=4.5V, ID=3.0A<br>25°C<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>°C<br>Ta=75<br>°C<br>Drain Current, ID -- A --25<br>Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>Ciss, Coss, Crss -- pF<br>**----- End of picture text -----**<br>
No.8994-3/7
**FW217A**
**==> picture [474 x 368] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGS -- Qg A S O<br>10 100<br>VDS=10V 7<br>9 ID=4.5A LY 53 [ | | Ty] ft J | tty ft tty ft ft ft<br>8 eee 2 Poot | yy<br>10<br>7 75 PEEa eaNwNOSH><br>es SH<br>6 ee [ae] 32 SRSetmee nen OeNSSa SO NEEly | |<br>5 a 1.0 ee NN SY fan<br>7<br>a ee 5 mbesSe, NENE S ASS<br>4 Po 3 |Lt | ‘A aN| INO NUPTT<br>2 Operation in this<br>3 area is limited by RDS(on).<br>0.1<br>2 7 75 Ta=25 ° C NSE<br>1 [fy 32 a Single pulse1unit eeEES<br>0 / | | | 0.01 | When mounted on ceramic substrate (2000mm ESSERE [2] ×0.8mm)<br>0 f | 2 | 4 {| 6 | 8 | 10 0.01 2 3 5 7 0.1 eee 2 3 5 7 1.0 2 3 5 7 10 2 3 eero 5 7100<br>Total Gate Charge, Qg -- nC IT16786 Drain-to-Source Voltage, VDS -- V IT16787<br>PD -- Ta PD (FET1) -- PD (FET2)<br>2.4 2.4<br>When mounted on ceramic substrate When mounted on ceramic substrate<br>2.2 2.2<br>(2000mm [2] × 0.8mm), PW ≤ 10s (2000mm [2] × 0.8mm), PW ≤ 10s<br>2.0 SoSPN 2.0 |6| | ft a<br>1.8 Ne eee eee 1.8 Pit} | de | EE | Tf<br>1.6 NNN eee 1.6 Pi NET Tt et<br>1.4 Poo} 1.4 te<br>1.2 1.2<br>pf NAN P| SeeNeEe Eee<br>1.0 HtINN | 1.0 See eNeEeeeeee<br>0.8 ™ | | 0.8 See eeNEeeeee<br>0.6 Ne 0.6 eee eeNeEeee<br>0.4 ee Ne 0.4 PoNN<br>0.2 0.2<br>0 0<br>0 PE 25 50 75 100 EN 125 150 175 0 F 0.2 it 0.4 0.6 tet 0.8 1.0 1.2 EE 1.4 rE 1.6 1.8 Yt 2.0 ft 2.2 2.4<br>Ambient Temperature, Ta -- °C IT16789 Allowable Power Dissipation(FET2), PD -- W IT16790<br>IDP=24A(PW≤10μs)<br>ID=6A<br>100<br>1msμs<br>10ms<br>DC operation10s<br>100ms<br>1unitTotal dissipation<br>Drain Current, ID -- A<br>Gate-to-Source Voltage, VGS -- V<br>Allowable Power Dissipation, PD -- W<br>Allowable Power Dissipation(FET1), PD -- W<br>**----- End of picture text -----**<br>
## **Taping Specifi cation**
FW217A-TL-2W
No.8994-4/7
**FW217A**
**==> picture [148 x 245] intentionally omitted <==**
**----- Start of picture text -----**<br>
••• ••••••• + ©<br>wo<br>| lO<br>4 +0.1 ~<br>00 ="<br> Ilst4—s<br>| 8 +0.1 o1K6 +0.1<br>Pin 1 Index<br>Feed D i rec t ion<br>**----- End of picture text -----**<br>
No.8994-5/7
**FW217A**
## **Outline Drawing** FW217A-TL-2W
## **Land Pattern Example**
**==> picture [481 x 370] intentionally omitted <==**
**----- Start of picture text -----**<br>
Mass (g) Unit Unit: mm<br>0.082<br>* For reference [mm]<br>0.65<br>1.27<br>1.75<br>5.60<br>**----- End of picture text -----**<br>
No.8994-6/7
**FW217A**
Note on usage : Since the FW217A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.8994-7/7
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →