FSBB30CH60C

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [59 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
February 2016<br>**----- End of picture text -----**<br>


## **FSBB30CH60C** 

## **Motion SPM[®] 3 Series** 

## **Features** 

- UL Certified No. E209204 (UL1557) 

- 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection 

- Low-Loss, Short-Circuit Rated IGBTs 

- Very Low Thermal Resistance Using AlN DBC Substrate 

- Built-in Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout 

- Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing 

- Single-Grounded Power Supply 

## **General Description** 

FSBB30CH60C is an advanced Motion SPM[®] 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. 

- Isolation Rating: 2500 Vrms / min. 

## **Applications** 

- Motion Control - Home Appliance / Industrial Motor 

## **Related Resources** 

_• AN-9044 - Motion SPM® 3 Series Users Guide_ 

**Figure 1. Package Overview** 

## **Package Marking and Ordering Information** 

|**Device**|**Device Marking**|**Package**|**Packing Type**|**Quantity**|
|---|---|---|---|---|
|FSBB30CH60C|FSBB30CH60C|SPMEC-027|Rail|10|



1 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Integrated Power Functions** 

- 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) 

## **Integrated Drive, Protection, and System Control Functions** 

- For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting 

   - control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 12 and 13. 

- For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) 

   - control supply circuit Under-Voltage Lock-Out Protection (UVLO) 

- Fault signaling: corresponding to UVLO (low-side supply) and SC faults 

- Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input 

## **Pin Configuration** 

**Figure 2. Top View** 

2 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Pin Descriptions** 

|**Pin Number**|**Pin Name**|**Pin Description**|
|---|---|---|
|1|VCC(L)|Low-Side Common Bias Voltage for IC and IGBTs Driving|
|2|COM|Common Supply Ground|
|3|IN(UL)|Signal Input for Low-Side U-Phase|
|4|IN(VL)|Signal Input for Low-Side V-Phase|
|5|IN(WL)|Signal Input for Low-Side W-Phase|
|6|VFO|Fault Output|
|7|CFOD|Capacitor for Fault Output Duration Selection|
|8|CSC|Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input|
|9|IN(UH)|Signal Input for High-Side U-Phase|
|10|VCC(H)|High-Side Common Bias Voltage for IC and IGBTs Driving|
|11|VB(U)|High-Side Bias Voltage for U-Phase IGBT Driving|
|12|VS(U)|High-Side Bias Voltage Ground for U-Phase IGBT Driving|
|13|IN(VH)|Signal Input for High-Side V-Phase|
|14|VCC(H)|High-Side Common Bias Voltage for IC and IGBTs Driving|
|15|VB(V)|High-Side Bias Voltage for V-Phase IGBT Driving|
|16|VS(V)|High-Side Bias Voltage Ground for V Phase IGBT Driving|
|17|IN(WH)|Signal Input for High-Side W-Phase|
|18|VCC(H)|High-Side Common Bias Voltage for IC and IGBTs Driving|
|19|VB(W)|High-Side Bias Voltage for W-Phase IGBT Driving|
|20|VS(W)|High-Side Bias Voltage Ground for W-Phase IGBT Driving|
|21|NU|Negative DC-Link Input for U-Phase|
|22|NV|Negative DC-Link Input for V-Phase|
|23|NW|Negative DC-Link Input for W-Phase|
|24|U|Output for U-Phase|
|25|V|Output for V-Phase|
|26|W|Output for W-Phase|
|27|P|Positive DC-Link Input|



3 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Internal Equivalent Circuit and Input/Output Pins** 

**==> picture [216 x 302] intentionally omitted <==**

**----- Start of picture text -----**<br>
P (27)<br>(19) VB(W) VB<br>(18) VCC(H) VCC OUT<br>COM<br>(17) IN(WH) IN VS W (26)<br>(20) VS(W)<br>(15) VB(V) VB<br>(14) VCC(H) VCC<br>OUT<br>COM<br>(13) IN(VH) IN VS V (25)<br>(16) VS(V)<br>(11) VB(U) VB<br>(10) VCC(H) VCC OUT<br>(9) IN(UH) COMIN VS U (24)<br>(12) VS(U)<br>(8) CSC C(SC) OUT(WL)<br>(7) C(6) VFOFOD C(FOD)VFO NW (23)<br>(5) IN(WL) IN(WL) OUT(VL)<br>(4) IN(VL)<br>(3) IN(UL) IN(VL)IN(UL) NV (22)<br>(2) COM<br>COM<br>(1) VCC(L) VCC OUT(UL)<br>VSL NU (21)<br>**----- End of picture text -----**<br>


## **Figure 3. Internal Block Diagram** 

## **1st Notes:** 

1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 

2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 

3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. 

4 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Absolute Maximum Ratings** (TJ = 25°C,  unless otherwise specified.) 

## **Inverter Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P - NU, NV, NW|450|V|
|VPN(Surge)|Supply Voltage (Surge)|Applied between P - NU, NV, NW|500|V|
|VCES|Collector - Emitter Voltage||600|V|
|± IC|Each IGBT Collector Current|TC= 25°C, TJ ≤150°C|30|A|
|± ICP|Each IGBT Collector Current (Peak)|TC= 25°C, TJ ≤150°C, Under 1 ms Pulse<br>Width|60|A|
|PC|Collector Dissipation|TC= 25°C per Chip|106|W|
|TJ|Operating Junction Temperature|(2nd Note 1)|-40 ~ 150|°C|



## **2nd Notes:** 

1. The maximum junction temperature rating of the power chips integrated within the Motion SPM[®] 3 product is 150 ° C (at TC ≤ 125 ° C). 

## **Control Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L) - COM|20|V|
|VBS|High-Side Control Bias Voltage|Applied between VB(U)- VS(U), VB(V)- VS(V),<br>VB(W)- VS(W)|20|V|
|VIN|Input Signal Voltage|Applied between IN(UH), IN(VH), IN(WH),<br>IN(UL), IN(VL), IN(WL)- COM|-0.3 ~ VCC+ 0.3|V|
|VFO|Fault Output Supply Voltage|Applied between VFO- COM|-0.3 ~ VCC+ 0.3|V|
|IFO|Fault Output Current|Sink Current at VFOpin|5|mA|
|VSC|Current-Sensing Input Voltage|Applied between CSC- COM|-0.3 ~ VCC+ 0.3|V|



## **Bootstrap Diode Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||600|V|
|IF|Forward Current|TC= 25°C, TJ ≤150°C|0.5|A|
|IFP|Forward Current (Peak)|TC= 25°C, TJ ≤150°C   Under 1 ms Pulse<br>Width|2.0|A|
|TJ|Operating Junction Temperature||-40 ~ 150|°C|



|**Total System**|**Total System**||||||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Conditions**||**Rating**|||**Unit**|
|VPN(PROT)|Self-Protection Supply Voltage Limit<br>(Short-Circuit Protection Capability)||VCC= VBS= 13.5 ~ 16.5 V<br>TJ= 150°C,  Non-Repetitive, < 2μs||400|||V|
|TC|Module Case Operation Temperature||-40°C≤TJ≤150°C, See Figure 2||-40 ~ 125|||°C|
|TSTG|Storage Temperature||||-40 ~ 125|||°C|
|VISO|Isolation Voltage||60 Hz, Sinusoidal, AC 1 Minute, Connect<br>Pins to Heat Sink Plate||2500|||Vrms|
|**Thermal Resistance**|||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**||
|Rth(j-c)Q|Junction to Case Thermal Resistance|Inverter IGBT Part (per 1 / 6 module)||-|-|1.17|°C / W||
|Rth(j-c)F||Inverter FWDi Part (per 1 / 6 module)||-|-|1.87|°C / W||



**2nd Notes:** 

2. For the measurement point of case temperature (TC), please refer to Figure 2. 

5 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**Electrical Characteristics** (TJ = 25°C, unless otherwise specified.) 

## **Inverter Part** 

|**Symbol**|**Symbol**|**Symbol**|**Parameter**|**Parameter**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|VCE(SAT)|||Collector - Emitter Saturation<br>Voltage||VCC= VBS= 15 V<br>VIN= 5 V||IC= 20 A, TJ= 25°C||-|-|2.0|V|
||VF||FWDi Forward Voltage||VIN= 0 V||IF= 20 A, TJ= 25°C||-|-|2.1|V|
|HS|tON||Switching Times||VPN= 300 V, VCC= VBS= 15 V<br>IC= 30 A<br>VIN= 0 V↔5 V, Inductive Load<br>(2nd Note 3)||||-|0.75|-|μs|
||tC(ON)||||||||-|0.2|-|μs|
||tOFF||||||||-|0.4|-|μs|
||tC(OFF)||||||||-|0.1|-|μs|
||trr||||||||-|0.1|-|μs|
|LS|tON||||VPN= 300 V, VCC= VBS= 15 V<br>IC= 30 A<br>VIN= 0 V↔5 V, Inductive Load<br>(2nd Note 3)||||-|0.55|-|μs|
||tC(ON)||||||||-|0.35|-|μs|
||tOFF||||||||-|0.4|-|μs|
||tC(OFF)||||||||-|0.1|-|μs|
||trr||||||||-|0.1|-|μs|
||ICES||Collector - Emitter Leakage<br>Current||VCE= VCES||||-|-|1|mA|
|**2nd Notes:**<br>3. tONand tOFFinclude the propagation delay of the inte<br>the detailed information, please see Figure 4.<br>**Control Part**||||rnal dri|ve IC. tC(ON)and tC(OFF)are the switching time of IGBT itsel|||f u|nder the given gate driving condition internally. For||||
|**Symbol**||**Parameter**|||**Conditions**||||**Min.**|**Typ.**|**Max.**|**Unit**|
|IQCCL||Quiescent VCCSupply<br>Current||VCC= 15 V<br>IN(UL, VL, WL)= 0 V||VCC(L)- COM|||-|-|23|mA|
|IQCCH||||VCC= 15 V<br>IN(UH, VH, WH)= 0 V||VCC(H)- COM|||-|-|600|μA|
|IQBS||Quiescent VBSSupply<br>Current||VBS= 15 V<br>IN(UH, VH, WH)= 0 V||VB(U)- VS(U), VB(V)- VS(V),<br>VB(W)- VS(W)|||-|-|500|μA|
|VFOH||Fault Output Voltage||VSC= 0 V, VFOCircuit: 4.7 kΩto 5 V Pull-up|||||4.5|-|-|V|
|VFOL||||VSC= 1 V, VFOCircuit: 4.7 kΩto 5 V Pull-up|||||-|-|0.8|V|
|VSC(ref)||Short-Circuit Current<br>Trip Level||VCC= 15 V (2nd Note 4)|||||0.45|0.50|0.55|V|
|TSD||Over-Temperature<br>Protection||Temperature at LVIC|||||-|160|-|°C|
|ΔTSD||Over-Temperature<br>Protection Hysterisis||Temperature at LVIC|||||-|5|-|°C|
|UVCCD||Supply Circuit<br>Under-Voltage Protection||Detection Level|||||10.7|11.9|13.0|V|
|UVCCR||||Reset Level|||||11.2|12.4|13.4|V|
|UVBSD||||Detection Level|||||10|11|12|V|
|UVBSR||||Reset Level|||||10.5|11.5|12.5|V|
|tFOD||Fault-Out Pulse Width||CFOD= 33 nF (2nd Note 5)|||||1.0|1.8|-|ms|
|VIN(ON)||ON Threshold Voltage||Applied between IN(UH), IN(VH), IN(WH), IN(UL),<br>IN(VL), IN(WL)- COM|||||2.8|-|-|V|
|VIN(OFF)||OFF Threshold Voltage|||||||-|-|0.8|V|



- **2nd Notes:** 

4. Short-circuit protection is functioning only at the low-sides. 

5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10[-6] x tFOD [F] 

6 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [468 x 506] intentionally omitted <==**

**----- Start of picture text -----**<br>
100% IC 100% IC<br>t<br>rr<br>V I I V<br>CE C C CE<br>V IN V IN<br>tON tOFF<br>t t<br>C(ON) C(OFF)<br>V IN(ON) 10% IC 90% IC 10% V CE V IN(OFF) 10% V CE 10% IC<br>(a) turn-on (b) turn-off<br>Figure 4. Switching Time Definition<br>SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT<br>2200 900<br>VCE=300V VCE=300V<br>2000 V CC =15V 800 V CC =15V<br>18001600 VIN=5V  TJ=25 ℃ 700 VIN=5V  T J =25 ℃<br> TJ=150 ℃ 600  T J =150 ℃<br>1400<br>1200 500<br>1000 400<br>800<br>300<br>600<br>200<br>400<br>200 100<br>0 0<br>0 3 6 9 12 15 18 21 24 27 30 33 0 3 6 9 12 15 18 21 24 27 30 33<br>COLLECTOR CURRENT, Ic [AMPERES] COLLECTOR CURRENT, Ic [AMPERES]<br>0<br> [uJ]  [uJ]<br>SW(ON) SW(OFF)<br>SWITCHING LOSS, E SWITCHING LOSS, E<br>**----- End of picture text -----**<br>


**Figure 5. Switching Loss Characteristics (Typical)** 

7 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [470 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
Bootstrap Diode Part<br>Symbol Parameter Conditions Min. Typ. Max. Unit<br>VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V<br>trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns<br>Built-in Bootstrap Diode VF-IF Characteristic<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>T =25oC<br>0.0 C<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>VF [V]<br> [A]IF<br>**----- End of picture text -----**<br>


**Figure 6. Built-in Bootstrap Diode Characteristics** 

**==> picture [31 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
2nd Notes:<br>**----- End of picture text -----**<br>


6. Built-in bootstrap diode includes around 15 Ω resistance characteristic. 

## **Recommended Operating Conditions** 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P - NU, NV, NW|-|300|400|V|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L) - COM|13.5|15.0|16.5|V|
|VBS|High-Side Bias Voltage|Applied between VB(U)- VS(U), VB(V)- VS(V),<br>VB(W)- VS(W)|13.0|15.0|18.5|V|
|dVCC/ dt,<br>dVBS/ dt|Control Supply Variation||-1|-|1|V /μs|
|tdead|Blanking Time for Preventing<br>Arm-Short|Each Input Signal|2|-|-|μs|
|fPWM|PWM Input Signal|-40°C≤TC ≤125°C, -40°C≤TJ ≤150°C|-|-|20|kHz|
|VSEN|Voltage for Current Sensing|Applied between NU, NV, NW- COM<br>(Including Surge Voltage)|-4||4|V|



8 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Mechanical Characteristics and Ratings** 

|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Mounting Torque|Mounting Screw: M3|Recommended 0.62 N•m|0.51|0.62|0.80|N•m|
|Device Flatness||See Figure 7|0|-|+120|μm|
|Weight|||-|15.00|-|g|



**==> picture [184 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
( + )<br>( + )<br>**----- End of picture text -----**<br>


**Figure 7. Flatness Measurement Position** 

9 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

## **Time Charts of Protective Function** 

**==> picture [348 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVCCR<br>a1 a6<br>Control UVCCD a3<br>Supply Voltage<br>a2<br>a4 a7<br>Output Current<br>a5<br>Fault Output Signal<br>**----- End of picture text -----**<br>


a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. 

a3 : Under-voltage detection (UVCCD). 

a4 : IGBT OFF in spite of control input condition. 

a5 : Fault output operation starts. 

a6 : Under-voltage reset (UVCCR). 

a7 : Normal operation: IGBT ON and carrying current. 

**Figure 8. Under-Voltage Protection (Low-Side)** 

**==> picture [348 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVBSR<br>b1 b5<br>Control UVBSD b3<br>Supply Voltage b6<br>b2<br>b4<br>Output Current<br>High-level (no fault output)<br>Fault Output Signal<br>**----- End of picture text -----**<br>


b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. 

b3 : Under-voltage detection (UVBSD). 

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-voltage reset (UVBSR). 

b6 : Normal operation: IGBT ON and carrying current. 

**Figure 9. Under-Voltage Protection (High-Side)** 

10 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [302 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
Lower Arms<br>c6 c7<br>Control Input<br>Protection<br>Circuit State SET RESET<br>Internal IGBT<br>c4<br>Gate - Emitter Voltage c3<br>c2<br>SC<br>c1<br>Output Current c8<br>SC Reference Voltage<br>Sensing Voltage<br>of Shunt Resistance<br>CR Circuit Time<br>Fault Output Signal c5 Constant Delay<br>**----- End of picture text -----**<br>


(with the external shunt resistance and CR connection) 

c1 : Normal operation: IGBT ON and carrying current. 

c2 : Short-circuit current detection (SC trigger). 

c3 : Hard IGBT gate interrupt. 

c4 : IGBT turns OFF. 

c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “LOW”: IGBT OFF state. 

c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON. 

c8 : IGBT OFF state. 

## **Figure 10. Short-Circuit Protection (Low-Side Operation Only)** 

11 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [428 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
+5 V<br>SPM<br>RPF = 4.7 ㏀<br>100 Ω<br>IN(UH) , IN(VH) , IN(WH)<br>100 Ω<br>MCU IN(UL) , IN(VL) , IN(WL)<br>100 Ω VFO<br>1 nF 1 nF 1 nF<br>CPF = 1 nF<br>COM<br>**----- End of picture text -----**<br>


## **Figure 11. Recommended MCU I/O Interface Circuit** 

## **3rd Notes:** 

1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed circuit board. The  input signal section of the Motion SPM[®] 3 product integrates a 5 k Ω ( typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 

2. The logic input works with standard CMOS or LSTTL outputs. 

## _These values depend on PWM control algorithm._ 

**==> picture [321 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
One-Leg Diagram of<br>Motion SPM 3 Product<br>P<br>Vcc VB<br>15 V 0.1 µF IN H O<br>22 µF COM VS<br>Inverter<br>V cc Output<br>1000 µF 1 µF IN OU T<br>C OM VSL<br>N<br>**----- End of picture text -----**<br>


## **Figure 12. Recommended Bootstrap Operation Circuit and Parameters** 

## **3rd Notes:** 

3. The ceramic capacitor placed between VCC - COM should be over 1 μ F and mounted as close to the pins of the Motion SPM 3 product as possible. 

12 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [468 x 361] intentionally omitted <==**

**----- Start of picture text -----**<br>
+5 V +15 V (19) VB(W) VB P (27)<br>(18) VCC(H) VCC<br>OUT<br>Gating WH RS CPS CBS CBSC (20) V(17) INS(W)(WH) COMIN VS W (26)<br>(15) VB(V) VB<br>(14) VCC(H) VCC OUT<br>Gating VH RS CPS CBS CBSC (13) IN(16) VS(V)(VH) COMIN VS V (25) M<br>M (11) VB(U) VB<br>(10) VCC(H) VCC OUT CDCS Vdc<br>C Gating UH RS CBS CBSC (9) IN(UH) COMIN VS U (24)<br>U CPS RF (12) VS(U)<br>RPF CSC (8) CSC C(SC) OUT(WL)<br>Fault RS CFOD (7) C(6) VFOFOD C(FOD)VFO NW (23) RSW<br>Gating WLGating ULGating VL RRRSSS (4) IN(5) IN(3) IN(VL)(WL)(UL) IN(WL)IN(VL)IN(UL) OUT(VL) NV (22) RSV<br>(2) COM<br>CBPF C PS CPS CPS CPF (1) VCC(L) COMVCC OUT(UL)VSL NU (21) RSU<br>CSP15 CSPC15<br>Input Signal for  R FW<br>W-Phase Current<br>Short-Circuit Protection V-Phase Current RFV<br>U-Phase Current RFU<br>CFW CFV CFU<br>**----- End of picture text -----**<br>


## **Figure 13. Typical Application Circuit** 

## **4th Notes:** 

1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm). 

2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM[®] 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 

3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k Ω resistance (please refer to Figure11). 

4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 

5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms (typ.))  Please refer to the 2nd note 5 for calculation method. 

6. Input signal is active-HIGH type. There is a 5 k Ω resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 Ω , CPS = 1 nF). 

7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 

8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 μ s. 

9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 

10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short  as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 μ F between the P & GND pins is recommended. 

11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there  should be sufficient distance between the MCU and the relays. 

12. CSPC15 should be over 1 μ F and mounted as close to the pins of the Motion SPM 3 product as possible. 

13 

©2008 Fairchild Semiconductor Corporation FSBB30CH60C Rev. 1.7 

www.fairchildsemi.com 

**==> picture [44 x 56] intentionally omitted <==**

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

**1**