FSB50450AS

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July 2016 

## **FSB50450A / FSB50450AS / FSB50450AT Motion SPM[®] 5 Series** 

## **Related Source** 

## **Features** 

- UL Certified No. E209204 (UL1557) 

   - _RD-FSB50450A - Reference Design for Motion SPM 5 Series Ver.2_ 

- 500 V RDS(on) = 2.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection 

   - _AN-9082 - Motion SPM5 Series Thermal Performance by Contact Pressure_ 

- Built-In Bootstrap Diodes Simplify PCB Layout 

   - _AN-9080 - User’s Guide for Motion SPM 5 Series V2_ 

- Separate Open-Source Pins from Low-Side MOSFETs for Three-Phase Current-Sensing 

## **General Description** 

- Active-HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt-trigger Input 

The FSB50450A/AS/AT is an advanced Motion SPM **[®]** 5 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in MOSFETs (FRFET **[®]** technology) to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts and thermal monitoring. The built-in high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open-source MOSFET terminals are available for each phase to support the widest variety of control algorithms. 

- Optimized for Low Electromagnetic Interference 

- HVIC Temperature-Sensing Built-In for Temperature Monitoring 

- HVIC for Gate Driving and Under-Voltage Protection 

- Isolation Rating: 1500 Vrms / min. 

- Moisture Sensitive Level (MSL) 3 

- RoHS Compliant 

## **Applications** 

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## **Absolute Maximum Ratings** 

**Inverter Part** (each MOSFET unless otherwise specified.) 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage of Each MOSFET||500|V|
|*ID 25|Each MOSFET Drain Current, Continuous|TC= 25°C|1.5|A|
|*ID 80|Each MOSFET Drain Current, Continuous|TC= 80°C|1.1|A|
|*IDP|Each MOSFET Drain Current, Peak|TC= 25°C, PW < 100s|3.9|A|
|*IDRMS|Each MOSFET Drain Current, Rms|TC= 80°C, FPWM< 20 kHz|0.8|Arms|
|*PD|Maximum Power Dissipation|TC= 25°C, For Each MOSFET|14|W|



**Control Part** (each HVIC unless otherwise specified.) 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VCC|Control Supply Voltage|Applied between VCCand COM|20|V|
|VBS|High-side Bias Voltage|Applied between VBand VS|20|V|
|VIN|Input Signal Voltage|Applied between VINand COM|-0.3 ~ VCC+ 0.3|V|



**Bootstrap Diode Part** (each bootstrap diode unless otherwise specified.) 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VRRMB|Maximum Repetitive Reverse Voltage||500|V|
|* IFB|Forward Current|TC= 25°C|0.5|A|
|* IFPB|Forward Current (Peak)|TC= 25°C, Under 1ms Pulse Width|1.5|A|



## **Thermal Resistance** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|RJC|Junction to Case Thermal Resistance|Each MOSFET under Inverter Oper-<br>ating Condition (1st Note 1)|8.9|°C/W|
|**Total System**|||||
|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|TJ|Operating Junction Temperature||-40 ~ 150|°C|
|TSTG|Storage Temperature||-40 ~ 125|°C|
|VISO|Isolation Voltage|60 Hz, Sinusoidal, 1 Minute, Con-<br>nect Pins to Heat Sink Plate|1500|Vrms|



## **1st Notes:** 

1. For the measurement point of case temperature TC, please refer to Figure 4. 

2. Marking  “ * “ is  calculation value or design factor. 

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## **Pin descriptions** 

|**Pin Number**|**Pin Name**|**Pin Description**|
|---|---|---|
|1|COM|IC Common Supply Ground|
|2|VB(U)|Bias Voltage for U-Phase High-Side MOSFET Driving|
|3|VCC(U)|Bias Voltage for U-Phase IC and Low-Side MOSFET Driving|
|4|IN(UH)|Signal Input for U-Phase High-Side|
|5|IN(UL)|Signal Input for U-Phase Low-Side|
|6|N.C|No Connection|
|7|VB(V)|Bias Voltage for V-Phase High Side MOSFET Driving|
|8|VCC(V)|Bias Voltage for V-Phase IC and Low Side MOSFET Driving|
|9|IN(VH)|Signal Input for V-Phase High-Side|
|10|IN(VL)|Signal Input for V-Phase Low-Side|
|11|VTS|Output for HVIC Temperature Sensing|
|12|VB(W)|Bias Voltage for W-Phase High-Side MOSFET Driving|
|13|VCC(W)|Bias Voltage for W-Phase IC and Low-Side MOSFET Driving|
|14|IN(WH)|Signal Input for W-Phase High-Side|
|15|IN(WL)|Signal Input for W-Phase Low-Side|
|16|N.C|No Connection|
|17|P|Positive DC-Link Input|
|18|U, VS(U)|Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving|
|19|NU|Negative DC-Link Input for U-Phase|
|20|NV|Negative DC-Link Input for V-Phase|
|21|V, VS(V)|Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving|
|22|NW|Negative DC-Link Input for W-Phase|
|23|W, VS(W)|Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving|



|(1) COM<br>(2) VB(U)<br>(3) VCC(U)<br>(4) IN (UH)<br>(5) IN (UL)<br>(6) N.C<br>(7) VB(V)<br>(8) VCC(V)<br>(9) IN (VH)<br>(10) IN (VL)<br>(11) VTS<br>(12) V B(W)<br>(13) VCC(W)<br>(14) IN (WH)<br>(15) IN (WL)<br>(16)<br>N.C|||||||||(17) P<br>(18) U, VS(U)<br>(19) NU<br>(20) NV<br>(21) V, VS(V)<br>(22) NW<br>(23) W, VS(W)|
|---|---|---|---|---|---|---|---|---|---|
|||VCC<br>VB||||||||
||||COM<br>LIN<br>HIN<br>HO<br>VS<br>LO|||||||
|||||||||||
|||||||||||
|||||||||||
||||COM<br>VCC<br>LIN<br>HIN<br>VB<br>HO<br>VS<br>LO<br>VTS|||||||
|||||||||||
|||||||||||
|||||||||||
|||||||||||
|||||||||||
|||VCC<br>VB||||||||
||||COM<br><br>LIN<br>HIN<br><br>HO<br>VS<br>LO|||||||
|||||||||||
|||||||||||
|||||||||||



## **Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)** 

**1st Notes:** 

3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM[®] 5 product. External connections should be made as indicated in Figure 3. 

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**Electrical Characteristics** (TJ = 25°C, VCC = VBS = 15 V unless otherwise specified.) 

**Inverter Part** (each MOSFET unless otherwise specified.) 

|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain - Source<br>Breakdown Voltage|VIN= 0 V, ID= 1 mA (2nd Note 1)||500|-|-|V|
|IDSS|Zero Gate Voltage<br>Drain Current|VIN= 0 V, VDS= 500 V||-|-|1|mA|
|RDS(on)|Static Drain - Source<br>Turn-On Resistance|VCC= VBS= 15 V, VIN= 5 V, ID= 1.0 A||-|1.9|2.4||
|VSD|Drain - Source Diode<br>Forward Voltage|VCC= VBS= 15V, VIN= 0 V, ID= -1.0 A||-|-|1.2|V|
|tON|Switching Times|VPN= 300 V, VCC= VBS= 15 V, ID= 1.0 A<br>VIN= 0 V5 V, Inductive Load L = 3 mH<br>High- and Low-Side MOSFET Switching<br>(2nd Note 2)||-|1250|-|ns|
|tOFF||||-|680|-|ns|
|trr||||-|200|-|ns|
|EON||||-|60|-|J|
|EOFF||||-|10|-|J|
|RBSOA|Reverse Bias Safe Oper-<br>ating Area|VPN= 400 V, VCC= VBS= 15 V, ID= IDP, VDS= BVDSS,<br>TJ= 150°C<br>High- and Low-Side MOSFET Switching (2nd Note 3)||Full Square||||
|**Control Part**(each HVIC unless otherwise specified.)||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|IQCC|Quiescent VCCCurrent|VCC= 15 V,<br>VIN= 0 V|Applied between VCCand COM|-|-|200|A|
|IQBS|Quiescent VBSCurrent|VBS= 15 V,<br>VIN= 0 V|Applied between VB(U)- U,<br>VB(V)- V, VB(W)- W|-|-|100|A|
|IPCC|Operating<br>VCC<br>Supply<br>Current|VCC- COM|VCC= 15 V, fPWM= 20 kHz, duty<br>= 50%, Applied to One PWM Sig-<br>nal Input for Low-Side|-|-|800|A|
|IPBS|Operating<br>VBS<br>Supply<br>Current|VB(U)- VS(U), VB(V)<br>- VS(V), VB(W)-<br>VS(W)|VCC= VBS= 15 V, fPWM= 20 kHz,<br>Duty = 50%, Applied to One PWM<br>Signal Input for High-Side|-|-|700|A|
|UVCCD|Low-Side Under-Voltage<br>Protection (Figure 8)|VCCUnder-Voltage Protection Detection Level||7.4|8.0|9.4|V|
|UVCCR||VCCUnder-Voltage Protection Reset Level||8.0|8.9|9.8|V|
|UVBSD|High-Side Under-Voltage<br>Protection (Figure 9)|VBSUnder-Voltage Protection Detection Level||7.4|8.0|9.4|V|
|UVBSR||VBSUnder-Voltage Protection Reset Level||8.0|8.9|9.8|V|
|VTS|HVIC Temperature Sens-<br>ing Voltage Output|VCC= 15 V, THVIC= 25°C (2nd Note 4)||600|790|980|mV|
|VIH|ON Threshold Voltage|Logic HIGH Level|Applied between VINand COM|-|-|2.9|V|
|VIL|OFF Threshold Voltage|Logic LOW Level||0.8|-|-|V|



|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VFB|Forward Voltage|IF= 0.1 A, TC= 25°C (2nd Note 5)|-|2.5|-|V|
|trrB|Reverse Recovery Time|IF= 0.1 A, TC= 25°C|-|80|-|ns|



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## **Recommended Operating Condition** 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P and N|-|300|400|V|
|VCC|Control Supply Voltage|Applied between VCCand COM|13.5|15.0|16.5|V|
|VBS|High-Side Bias Voltage|Applied between VBand VS|13.5|15.0|16.5|V|
|VIN(ON)|Input ON Threshold Voltage|Applied between VINand COM|3.0|-|VCC|V|
|VIN(OFF)|Input OFF Threshold Voltage||0|-|0.6|V|
|tdead|Blanking Time for Preventing<br>Arm-Short|VCC= VBS= 13.5 ~ 16.5 V, TJ 150°C|1.0|-|-|s|
|fPWM|PWM Switching Frequency|TJ 150°C|-|15|-|kHz|



## **Built-In Bootstrap Diode VF-IF Characteristic** 

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1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>VF [V]                    TC = 25°C<br> [A]<br>IF<br>**----- End of picture text -----**<br>


## **Figure 2. Built-In Bootstrap Diode Characteristics (Typical)** 

## **2nd Notes:** 

1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM[®] 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 

2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 

3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test circuit that is same as the switching test circuit. 

4. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically. 

5. Built-in bootstrap diode includes around 15 Ω resistance characteristic. Please refer to Figure 2. 

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These values depend on PWM control algorithm<br>+15 V C1 * Example Circuit : V phase<br>Sh<br>VDC<br>P HIN LIN Output Note<br>VCC VB Inverter 0 0 Z Both FRFET Off<br>R5 HIN HO V Output 0 1 0 Low side FRFET On<br>—— foe LIN VS | C3 1 0 VDC High side FRFET On<br>C5 e s COM LO ? 1 1 Forbidden Shoot through<br>VTS N R3 Open Open Z Same as (0,0)<br>l am us<br>10 F C2 C4 One Leg Diagram of Motion  SPM [®]  5 Product<br>* Example of Bootstrap Paramters:<br>C1 = C2  = 1 F Ceramic Capacitor<br>Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters<br>3rd Notes:<br>1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.<br>2. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.  and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. ) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.  at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.<br>3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C11, C2<br>and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current. 3 should have good high-frequency characteristics to absorb high-frequency ripple-current.  should have good high-frequency characteristics to absorb high-frequency ripple-current.<br>ARATARALARERARAAURORORAREROROLE,<br>a, uo<br>MOSFET Case Temperature(Tc)<br>Detecting Point<br>Figure 4. Case Temperature Measurement<br>3rd Notes:<br>4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.<br>3.5<br>3.0<br>Pf | ft<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>20 40 60 80 100 120 140 160<br>THVIC [oC]<br>MCU<br>[V]<br>TS<br>V<br>**----- End of picture text -----**<br>


2. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.  and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. ) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.  at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 

3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C11, C2 and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current. 3 should have good high-frequency characteristics to absorb high-frequency ripple-current.  should have good high-frequency characteristics to absorb high-frequency ripple-current. 

**Figure 5. Temperature Profile of VTS (Typical)** 

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VIN VIN<br>Irr<br>100% of ID 120% of ID<br>VDS ID<br>10% of ID<br>ID VDS<br>tON trr tOFF<br>(a) Turn-on (b) Turn-off<br>Figure 6. Switching Time Definitions<br>CBS<br>VCC ID<br>VCC VB<br>HIN HO L VDC<br>LIN VS<br>+<br>COM LO V DS<br>VTS -<br>One Leg Diagram of Motion  SPM [®]  5 Product<br>**----- End of picture text -----**<br>


**Figure 7. Switching and RBSOA (Single-Pulse) Test Circuit (Low-side)** 

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Input Signal<br>UV Protection<br>RESET DETECTION RESET<br>Status<br>Low-side Supply, VCC UVCCD UVCCR<br>MOSFET Current<br>Figure 8. Under-Voltage Protection (Low-Side)<br>Input Signal<br>UV Protection<br>RESET DETECTION RESET<br>Status<br>High-side Supply, VBS UVBSD UVBSR<br>MOSFET Current<br>**----- End of picture text -----**<br>


**Figure 9. Under-Voltage Protection (High-Side)** 

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C1<br>(1) COM<br>(2) VB(U) (17) P<br>(3) VCC(U)<br>VCC VB<br>R5 (4) IN(UH)<br>(5) IN(UL) HINLIN HOVS (18) U, VS(U) C3 VDC<br>C5 C2 COM LO<br>(6) N.C<br>(19) NU<br>(7) VB(V)<br>(8) VCC(V) (20) NV<br>VCC VB<br>(9) IN(VH)<br>HIN HO<br>(10) IN(VL) (21) V, VS(V)<br>LIN VS M<br>COM LO<br>(11) VTS<br>VTS<br>(12) VB(W)<br>(13) VCC(W) (22) NW<br>VCC VB<br>(14) IN(WH)<br>HIN HO<br>(15) IN(WL) (23) W, VS(W)<br>LIN VS<br>COM LO<br>(16) N.C<br>C4<br>For current-sensing and protection R4<br>15 V<br>Supply C6 R3<br>Micom<br>**----- End of picture text -----**<br>


**Figure 10. Example of Application Circuit** 

## **4th Notes:** 

1. About pin position, refer to Figure 1. 

2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM[®] 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 

3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the lowside MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state. 

4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC. 

5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current. 

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## **Detailed Package Outline Drawings(FSB50450A)** 

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_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_- https://www.fairchildsemi.com/package drawings/MO/MOD23DC.pdf_ 

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## **Detailed Package Outline Drawings(FSB50450AS)** 

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_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_- https://www.fairchildsemi.com/package drawings/MO/MOD23DG.pdf_ 

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## **Detailed Package Outline Drawings(FSB50450AT)** 

**==> picture [424 x 507] intentionally omitted <==**

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: - https://www.fairchildsemi.com/package drawings/MO/MOD23DF.pdf_ 

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## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower F-PFS OPTOPLANAR[®] AX-CAPAttitudeEngine™ AwindaBitSiC ~~™~~[®][®] * ™ Global Power ResourceGreenBridgeGreen FPSFRFET ™[®] ~~™~~ ™ SM Power Supply WebDesignerPowerTrench®[®] ™ TinyBoostTinyBuckTinyCalc iS GENERALSYSTEM[®][®] ®* Build it Now ~~™~~ Green FPS ™ e-Series ™ PowerXS™ TinyLogic[®] CorePLUS ~~™~~ G _max_ ~~™~~ Programmable Active Droop TINYOPTO CorePOWER ™ GTO ™ QFET[®] TinyPower ™ _CROSSVOLT_ ™ IntelliMAX ™ QS ™ TinyPWM ™ CTL ™ ISOPLANAR ™ Quiet Series TinyWire Current Transfer Logic ™ Making Small Speakers Sound Louder RapidConfigure ™ TranSiC ™ DEUXPEED[®] and Better™ ™ TriFault Detect ™ Dual Cool™ MegaBuck ™2 TRUECURRENT[®] * EfficientMaxEcoSPARK[®] ™ MICROCOUPLERMicroFET ™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise ™ M SerDes ™ ESBC® ™ MicroPakMicroPak2 ™ SMART STARTSmartMax ™ ™ UHC "24...[®] ~~-~~ MillerDrive **™** Solutions for Your Success ™ Ultra FRFET FACT Quiet SeriesFACTFairchildFastvCoreFETBenchFairchild SemiconductorFPS ™[®][®] ™™ ™[®] MotionGridMTiMTxMVNmWSaverOptoHiTMotionMax[®][®][®] ™[®][®] ™ SuperFETSPMSTEALTHSuperSOTSuperSOTSuperSOTSupreMOS[®] ™™™[®] ™™[®] -3 -6 -8 Xsens™UniFETVCXVisualMaxVoltagePlusXS™ hsry™ ® ™ ™wa OPTOLOGIC[®] SyncFET Sync-Lock™ 

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **AUTHORIZED USE** 

Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

**Datasheet Identification Product Status Definition** Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 

Rev. I77 

© Fairchild Semiconductor Corporation 

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