FS950R08A6P2BBPSA1

IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 870 W, 150 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
SVHC: No SVHC (25-Jun-2025)
Product Range: HybridPACK
IGBT Technology: IGBT EDT2 [Trench/Field Stop]
IGBT Termination: Press Fit
Power Dissipation: 870W
IGBT Configuration: Six Pack [Full Bridge]
Transistor Mounting: Panel
DC Collector Current: 450A
Power Dissipation Pd: 870W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 450A
Collector Emitter Voltage Max: 750V
Collector Emitter Voltage V(br)ceo: 750V
Collector Emitter Saturation Voltage: 1.1V
Collector Emitter Saturation Voltage Vce(on): 1.1V

Delivery and price
Units per pack	5
Price	302.89 €
Current stock	10+
Lead time	30 days

Datasheet

# FS950R08A6P2B 

HybridPACK™ **FS950R08A6P2B** Drive Module 

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VCES = 750 V<br>IC = 950 A<br>**----- End of picture text -----**<br>


## Typical Applications 

- •Automotive Applications 

- •Hybrid Electrical Vehicles (H)EV 

- •Motor Drives 

- •Commercial Agriculture Vehicles 

## Electrical Features 

- •Blocking voltage 750V 

- •Low VCEsat 

- •Low Switching Losses 

- •Low Qg and Crss 

- •Low Inductive Design 

•Tvj op = 150°C • Short-time extended Operation Temperature vj op 

## Mechanical Features 

- •4.2kV DC 1sec Insulation 

- •High Creepage and Clearance Distances 

- •Compact design 

- •High Power Density 

- •Direct Cooled PinFin Base Plate 

- •Guiding elements for PCB and cooler assembly 

- •Integrated NTC temperature sensor 

- •PressFIT Contact Technology 

- •RoHS compliant 

## Description 

The HybridPACK[TM] Drive is a very compact six-pack module (750V/950A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. 

The new HybridPACK[TM] Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure and optimized ceramic material  in the FS950R08A6P2B product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. 

- •UL 94 V0 module frame 

|Product Name|OrderingCode|
|---|---|
|FS950R08A6P2B|SP001720776|



Final Data Sheet 

2 

FS950R08A6P2B HybridPACK™ Drive Module 

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## 2     IGBT,Inverter 

## 2.1    Maximum Rated Values 

|2     IGBT,Inverter<br>2.1    Maximum Rated Values|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Collector-emitter voltage|Tvj= 25°C|VCES||750||V|
|Implemented collector current||ICN||950||A|
|Continuous DC collector current|TF= 95°C, Tvj max= 175°C|IC nom||4501)||A|
|Repetitive peak collector current|tP= 1 ms|ICRM||1900||A|
|Total power dissipation|TF= 75°C, Tvj max= 175°C|Ptot||8701)||W|
|Gate-emitter peak voltage||VGES||+/-20||V|
|2.2    Characteristic Values|||min.|typ.|max.||
|Collector-emitter saturation voltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 950 A, VGE= 15 V                                       Tvj= 25°C<br>IC= 950 A, VGE= 15 V                                       Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.10<br>1.15<br>1.15<br>1.35<br>1.55|1.35|V|
|Gate threshold voltage|IC= 9.60 mA, VCE= VGE<br>Tvj= 175°C<br>Tvj= 25°C|VGEth|4.90|5.80<br>4,10|6.50|V|
|Gate charge|VGE= -8 V ... 15 V, VCE= 400V|QG||4.40||µC|
|Internal gate resistor|Tvj= 25°C|RGint||0.7||Ω|
|Input capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cies||80.0||nF|
|Output capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Coes||1.00||nF|
|Reverse transfer capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.30||nF|
|Collector-emitter cut-off current|VCE= 750 V, VGE= 0 V<br>VCE= 750 V, VGE= 0 V                                     Tvj= 175°C<br>Tvj= 25°C|ICES||5|1.0|mA|
|Gate-emitter leakage current|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA|
|Turn-on delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.28<br>0.29<br>0.30||µs|
|Rise time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.07<br>0.08<br>0.08||µs|
|Turn-off delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.94<br>1.05<br>1.05||µs|
|Fall time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.04<br>0.05<br>0.06||µs|
|Turn-on energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>di/dt (Tvj25°C) = 5500 A/µs<br>di/dt (Tvj150°C) = 5000 A/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||13.5<br>17.5<br>18.0||mJ|
|Turn-off energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>dv/dt (Tvj25°C) = 3100 V/µs<br>dv/dt (Tvj150°C) = 2500 V/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||23.5<br>29.0<br>30.0||mJ|
|SC data|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 175°C<br>tP ≤6 µs,<br>tP ≤3 µs,|ISC||4800<br>3900||A|
|Thermal resistance, junction to cooling fluid|per IGBT;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.1002)|0.1152)|K/W|
|Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C|



> 1) Verified by characterization / design not by test. 

2) Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 

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FS950R08A6P2B HybridPACK™ Drive Module 

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## 3     Diode, Inverter 

## 3.1    Maximum Rated Values 

|3     Diode, Inverter<br>3.1    Maximum Rated Values|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Repetitive peak reverse voltage|Tvj= 25°C|VRRM||750||V|
|Implemented forward current||IFN||950||A|
|Continuous DC forward current||IF||4501)||A|
|Repetitive peak forward current|tP= 1 ms|IFRM||1900||A|
|I²t - value|VR= 0 V, tP= 10 ms, Tvj= 150°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t||19000<br>16000||A²s<br>A²s|
|3.2    Characteristic Values|||min.|typ.|max.||
|Forward voltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 950 A, VGE= 0 V                                          Tvj= 25°C<br>IF= 950 A, VGE= 0 V                                          Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.45<br>1.30<br>1.25<br>1.80<br>1.70|1.65|V|
|Peak reverse recovery current|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||250<br>350<br>370||A|
|Recovered charge|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||20.0<br>40.0<br>45.0||µC|
|Reverse recovery energy|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||7.00<br>13.0<br>15.0||mJ|
|Thermal resistance, junction to cooling fluid|per diode;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.1402)|0.1602)|K/W|
|Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C|



## - 4     NTC Thermistor 

||||||||
|---|---|---|---|---|---|---|
|4     NTC-Thermistor|||min.|typ.|max.||
|Parameter|Conditions|Symbol||Value||Unit|
|Rated resistance|TC= 25°C|R25||5.00||kΩ|
|Deviation of R100|TC= 100°C, R100= 493Ω|∆R/R|5||5|%|
|Power dissipation|TC= 25°C|P25|||20.0|mW|
|B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Specification according to the valid application note. 

> 1) Verified by characterization / design not by test. 

2) Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. 

V3.0,  2019-09-10 

Final Data Sheet 

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FS950R08A6P2B HybridPACK™ Drive Module 

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## 5     Module 

|5     Module|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Isolation test voltage|RMS, f = 0 Hz, t = 1 sec|VISOL||4.2<br>||kV|
|Maximum RMS module terminal current|TF= 75°C, TCt= 105°C|ItRMS||550||A|
|Material of module baseplate||||Cu+Ni1)|||
|Internal isolation|basic insulation (class 1, IEC 61140)|||Si3N4|||
|Creepage distance|terminal to heatsink<br>terminal to terminal|dCreep||9.0<br>9.0||mm|
|Clearance|terminal to heatsink<br>terminal to terminal|dClear||4.5<br>4.5||mm|
|Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Pressure drop in cooling circuit|∆V/∆t = 10.0 dm³/min; TF= 75°C|∆p||642)||mbar|
|Maximum pressure in cooling circuit|Tbaseplate< 40°C<br>Tbaseplate> 40°C<br>(relative pressure)|p|||2.5<br>2.0|bar|
|Stray inductance module||LsCE||8.0||nH|
|Module lead resistance, terminals - chip|TF= 25 °C, per switch|RCC'+EE'||0.75||mΩ|
|Storage temperature||Tstg|-40||125|°C|
|Mounting torque for modul mounting|Screw M4 baseplate to heatsink|M|1.80|2.00|2.203)|Nm|
|Weight||G||720||g|



1) Ni plated Cu baseplate. 

2) Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) According to application note AN-HPDPERF-ASSEMBLY. Final Data Sheet 5 

V3.0,  2019-09-10 

5 

FS950R08A6P2B HybridPACK™ Drive Module 

## 6     Characteristics Diagrams 

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**----- Start of picture text -----**<br>
output characteristic IGBT,Inverter (typical) output characteristic IGBT,Inverter (typical)<br>IC = f (VCE) IC = f (VCE)<br>VGE = 15 V Tvj = 150°C<br>1800 1800<br>Tvj = 25°C VGE = 19V<br>Tvj = 150°C VGE = 17V<br>1600 EJ Tvj = 175°C A 1600 fF VVGEGE = 15V = 13V Uo<br>VGE = 11V<br>1400 1400 VGE = 9V<br>S| Ep<br>1200 1200<br>A ) e ye<br>1000 1000<br>a e e<br>800 800<br>OA) Co ee<br>600 600<br>s/s ee) An<br>ny ee ey Ze<br>400 400<br>200 200<br>| eee<br>> Ae ee? Ace<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC = f (VGE) Eon = f (IC), Eoff = f (IC),<br>VCE = 20 V VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V<br>1800 70<br>Tvj = 25°C Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 150°C<br>1600 E T T vj = 175°C ILf| 60 — EEonoff, T, Tvjvj = 175°C = 175°C<br>1400<br>eA Ee<br>50<br>1200<br>anv en ,<br>40<br>1000<br>PO LA<br>800 PT 30 Le<br>600<br>a eee<br>20<br>400<br>poe) ae<br>10<br>200<br>fan//eeeeeees<br>let<br>0 0<br>5 TL 6 7 V 8 [TTT] 9 10 11 12 13 0 100 200 300 4 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


V3.0,  2019-09-10 

Final Data Sheet 

6 

FS950R08A6P2B HybridPACK™ Drive Module 

switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V 

transient thermal impedance IGBT,Inverter ZthJF = f (t),    ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol Tf = 75°C;  cooler design according to AN-HPDPERF-ASSEMBLY 

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140 1<br>Eon, Tvj = 150°C ZthJF : IGBT<br>Eoff, Tvj = 150°C<br>Eon, Tvj = 175°C<br>120 Eoff, Tvj = 175°C 5 n e el<br>100<br>0,1<br>e e e)<br>80<br>60<br>ELLE ATLL LE) GRR<br>0,01<br>40<br>ope eer) eect<br>20 i: 1 2 3 4<br>ri[K/W]: 0,007 0,038 0,05 0,02<br>τ i[s]: 0,001 0,03 0,25 1,5<br>Ao) GE eet !<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>reverse bias safe operating area IGBT,Inverter (RBSOA) thermal impedance IGBT,Inverter<br>C = f (VCE) = f (VCE)CE)) RthJF = f (∆V/∆t),    Tf = 75°C; 50% water / 50% ethylenglycol<br>GE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°CGoff = 5,1 Ω, Tvj = 175°C = 5,1 Ω, Tvj = 175°CΩ, Tvj = 175°C, Tvj = 175°Cvj = 175°C = 175°C cooler design according to AN-HPDPERF-ASSEMBLY<br>2000 0,129<br>1900 RthJF: IGBT<br>1800 0,127<br>a<br>1700<br>1600 0,125<br>1500<br>1400 oe PTS 0,123 JAOe eepe<br>1300<br>ne<br>1200 0,121<br>1100<br>1000 0,119<br>EERE RH CON<br>900<br>es<br>800 0,117<br>700<br>600 0,115<br>Se PONE<br>500<br>400 0,113<br>HE IC, Modul RE COCO Sec<br>300<br>IC, Chip<br>200 0,111<br>E s<br>100<br>o n<br>0 0,109<br>0 100 200 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 13 14<br>VCE  [V] ∆ V/ ∆ t [dm³/min]<br> [K/W]<br>E [mJ] thJF<br>Z<br> [A]  [K/W]<br>IC<br>thJF<br>R<br>**----- End of picture text -----**<br>


reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) = f (VCE)CE)) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°CGoff = 5,1 Ω, Tvj = 175°C = 5,1 Ω, Tvj = 175°CΩ, Tvj = 175°C, Tvj = 175°Cvj = 175°C = 175°C 

V3.0,  2019-09-10 

Final Data Sheet 

7 

FS950R08A6P2B HybridPACK™ Drive Module 

capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz 

gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) 

VCE = 400 V, IC = 450 A, Tvj = 25°C 

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100 15<br>QG<br>Cies<br>Coes 12<br>Cres<br>a<br>5 Pe<br>9<br>10<br>|<br>6<br>a n —<br>3<br>Baas Eft<br>0<br>1<br>-3<br>esses Ot<br>-6<br>SS S] Vo<br>0,1 -9<br>0 100 200 300 400 500 0 1 2 3 4 5<br>VCE [V] QG [µC]<br>maximum allowed collector-emitter voltage forward characteristic of Diode, Inverter (typical)<br>CES = f(Tvj),       verified by characterization / design not by test = f(Tvj),       verified by characterization / design not by testvj),       verified by characterization / design not by test),       verified by characterization / design not by test IF = f (VF)<br>CES = 1 mA for Tvj = 1 mA for Tvjvj ≤  25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C<br>800 1800<br>VCES Tvj = 25°C<br>Tvj = 150°C<br>1600 Tvj = 175°C<br>Rit) Et<br>775 ye<br>e ee<br>1400 ee<br>750 1200<br>1000<br>725<br>f aa<br>800 An<br>700 600<br>400<br>675<br>200<br>ELLE) |p|eeA |<br>650 0<br>-50 -25 0 25 50 75 100 125 150 175 200 0,0 0,4 0,8 1,2 1,6 2,0 2,4<br>Tvj [°C] VF [V]<br> [V]<br>GE<br>C [nF] V<br> [V]<br> [A]<br>CES IF<br>V<br>**----- End of picture text -----**<br>


maximum allowed collector-emitter voltage VCES = f(Tvj),       verified by characterization / design not by test = f(Tvj),       verified by characterization / design not by testvj),       verified by characterization / design not by test),       verified by characterization / design not by test ICES = 1 mA for Tvj = 1 mA for Tvjvj ≤ 25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C 

V3.0,  2019-09-10 

Final Data Sheet 

8 

FS950R08A6P2B HybridPACK™ Drive Module 

switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω, VCE = 400 V 

switching losses Diode, Inverter (typical) Erec = f (RG), 

IF = 450 A, VCE = 400 V 

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**----- Start of picture text -----**<br>
22 20<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>20 FETTJ Erec, Tvj = 175°C T} 18 Erec, Tvj = 175°C<br>18<br>16<br>Pt | tery U NE<br>16<br>ete 14 AR E<br>14 Dl peer] OAS Ee<br>12<br>12<br>10<br>Hoe KET<br>10<br>8<br>8 coo, HESS<br>6<br>6 4ee eee oe<br>4<br>4<br>2 ee 2 e<br>TeEEEEE<br>0 EE ) 0 Eee ee<br>0 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


transient thermal impedance Diode, Inverter ZthJF = f (t),    ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol Tf = 75°C;  cooler design according to AN-HPDPERF-ASSEMBLY 

thermal impedance Diode, Inverter RthJF = f (∆V/∆t),    Tf = 75°C; 50% water / 50% ethylenglycol cooler design according to AN-HPDPERF-ASSEMBLY 

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1 0,174<br>ZthJC : Diode RthJF: Diode<br>0,172<br>0,170<br>ELTA LTT EEE EE :<br>0,1 0,168<br>UMCrm = LAE EL EE EL<br>0,166<br>FEET HHE HEH 0,164<br>0,01 0,162<br>2000 0|<br>0,160<br>i: 1 2 3 4<br>ri[K/W]: 0,015 0,07 0,055 0,02 0,158<br>a τ i[s]: 0,001 0,03 0,25 1,5 lil ==<br>0,001 l ho) 0,156 «= CCCs<br>0,001 0,01 0,1 1 10 4 5 6 7 8 9 10 11 12 13 14<br>t [s] ∆ V/ ∆ t [dm³/min]<br> [K/W]  [K/W]<br>thJC thJF<br>Z R<br>**----- End of picture text -----**<br>


V3.0,  2019-09-10 

Final Data Sheet 

9 

FS950R08A6P2B HybridPACK™ Drive Module 

NTC-Thermistor-temperature characteristic (typical) R = f (T) 

pressure drop in cooling circuit ∆p = f (∆V/∆t),    Tf = 75°C; 50% water / 50% ethylenglycol cooler design according to AN-HPDPERF-ASSEMBLY 

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100000 120<br>Rtyp ∆ p: Modul<br>SSE Ae”<br>100<br>CREPE P PP<br>10000 INTETT ET 80 PP<br>pees) LATE<br>60<br>i<br>1000 40<br>LT} TXEEEE) ED<br>PSS) Ee<br>20<br>a<br>100 PPtttte E R Y 0 OEE<br>-40 -20 0 20 40 60 80 100 120 140 160 4 5 6 7 8 9 10 11 12 13 14<br>TC [°C] ∆ V/ ∆ t [dm³/min]<br>] Ω<br>R[<br>p [mbar]<br>∆<br>**----- End of picture text -----**<br>


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## 7     Circuit diagram 

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**----- Start of picture text -----**<br>
P1  P2  P3<br>T1<br>C1  C3  C5<br>T<br>T2<br>G1 G3 G5<br>E1 E3 E5 T3<br>U V W T<br>C2 C4 C6<br>T4<br>G2 G4 G6 T5<br>E2 E4 E6 T<br>T6<br>N1 N2 N3<br>**----- End of picture text -----**<br>


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## 8     Package outlines 

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**----- Start of picture text -----**<br>
Ø5,3±0,15 {<br>B<br>n 0,6 F G<br>j A<br>Ø1,2 D E<br>F G 6x(N1-N3;P1-P3)<br>6x D 14±0,26x 6x n 5,5±0,1<br>1±0,15 22,25±0,4 16±0,2 6x<br>16,25 n 0,5 D E<br>j A<br>9,75±0,4 Y Ø1,6 B C<br>B 5±0,4 N1 P1 N2 P2 N3 P3 8x<br>0 0 X 0<br>15,5±0,5<br>C2 E2 G2 C4 E4 G4 C6 E6 G6<br>4±0,3<br>T1 T3 T5<br>6,35±0,5 T2 T4 T6<br>66,5±0,5 G1 E1 C1 G3 E3 C3 G5 E5 C5<br>A<br>82 82<br>C 90,75±0,487±0,4 U V W C<br>1±0,15<br>3x 98,25<br>104,25±0,4 E 3x n 5,5±0,1<br>H 14±0,23x n 0,6 H I<br>j A<br>Ø1,2 D E<br>I 3x(U;V;W)<br>B<br>S<br>X-Y ( 1 : 1 )<br>9,3±0,28x LD1 Y N1 P1 D2 N2 P2 D3 N3 P3 D4 j 8x n 0,8 A L M<br>0 Ø1,6 B C<br>c 0,3 CZ A 8 M<br>6x common zones: X<br>D2-D3D1-D2 dimensioned for 18,85 C2 E2 G2 C4 E4 G4 C6 E6 G6<br>D3-D4D8-D7 EJOT Delta PTWN5451 30 x J Z K [origin axis generated by ] C2;E2;G2;C4;E4;G4;C6;E6;G6<br>D7-D6D6-D5 R<br>T<br>51,85 T1 T3 T5<br>59,35 T2 T4 T6<br>67,15 G1 E1 C1 G3 E3 C3 G5 E5 D5<br>69,85 C5<br>3,94±0,5 74,1<br>refers 82<br>to local CZ D8 U V W C<br>D7 D6<br>Area R;S or T<br>(19,75)<br>Z ( 1,5 : 1 )<br>Drawing: D00138581_04<br>edges gen. tolerances surface<br>DIN ISO 13715 2. DIN ISO167421. DIN-TG4 DIN EN ISO1302 j **** A KB CJ<br>2768-mK 24x<br>All dimensions refer to module in C2 E2 G2   ** Pin positions checked<br>delivery condition with pin gauge<br>according to Application<br>Note AN-HPD-ASSEMBLY<br>(119,553)<br>(43,305°)<br>8x<br>26±0,3 10,1±0,4 7,6±0,4 06 0-0,2 26,25±0,4 25±0,4 20 5,7 0 13,3 27,33 41,3 60,3 74,67 88,3 107,3 122 127±0,4 128,25±0,4<br>8,5±0,3<br>8x<br>4,5±0,15<br>n<br>4,3±0,15<br>3x 16±0,2<br>reference plane 22.000 7,6±0,4 0 20 0 8,3 27,33 55,3 74,67 87 102,3 122<br>23,25 12,2 0 4 8,05 27,35 34,8 51 55,05 74,65 81,8 98 102,05 125,25<br>12,8±0,2 0<br>23,25 10,25 6,2 0 21,95 23,35 27,35 36,75 40,8 68,95 70,35 74,65 83,75 87 87,8 115,95 117,35 125,25<br>**----- End of picture text -----**<br>


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## 9     Label Codes 

## 9.1    Module Code 

|9     Label Codes<br>9.1    Module Code||||
|---|---|---|---|
|Code Format|Data Matrix|||
|Encoding|ASCII Text|||
|Symbol Size|16x16|||
|Standard|IEC24720 and IEC16022|||
|Code Content|Content<br>Module Serial Number<br>Module Material Number<br>Production Order Number<br>Datecode (Production Year)<br>Datecode (Production Week)|Digit<br>1 - 5<br>6 - 11<br>12 - 19<br>20 - 21<br>22 - 23|Example (below)<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530|||



## 9.2    Packing Code 

|9.2    Packing Code|||||
|---|---|---|---|---|
|9.2    Packing Code<br>Code Format|Code128||||
|Encoding|Code Set A||||
|Symbol Size|34 digits||||
|Standard|IEC8859-1||||
|Code Content|Content<br>Backend Construction Number<br>Production Lot Number<br>Serial Number<br>Date Code<br>Box Quantity<br>~~Sn~~|Identifier<br>X<br>1T<br>S<br>9D<br>Q<br>~~Sn~~|Digit<br>2 - 9<br>12 - 19<br>21 - 25<br>28 - 31<br>33 - 34<br>~~Sn~~|Example (below)<br>95056609<br>2X0003E0<br>754389<br>1139<br>15<br>~~Sn~~|
|Example|X950566091T2X0003E0S754389D1139Q15<br>~~Sn~~||||



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## Revision History 

Major changes since previous revision 

|Revision History|Revision History||
|---|---|---|
|Reference|Date|Description|
|V2.0|2018-08-23|First edition preliminary datasheet|
|V3.0|2019-09-10|Final datasheet|



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## Terms & Conditions of usage 

Edition 2018-08-01 

Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## Information 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. 

Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

## Trademarks 

## Trademarks of Infineon Technologies AG 

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 

## Other Trademarks 

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. 

Last update 2011-11-11 

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15 

w w w . i n f i n e o n . c o m 

Published by Infineon Technologies AG

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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