FS8K
Standard Recovery Diode, 800 V, 8 A, Single Dual Anode, 1.1 V, 3.37 µs, 230 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-277
- Diode Configuration: Single Dual Anode
- Forward Voltage Max: 1.1V
- Forward Surge Current: 230A
- Reverse Recovery Time: 3.37µs
- Average Forward Current: 8A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.259 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ~~oe~~
## 8 A Standard Recovery Surface Mount Rectifiers FS8G - FS8M
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Anode 1<br>3<br>Surface Mount Rectifiers<br>Cathode<br>—{- Anode 2<br>FS8G - FS8M Rectifier<br>Description<br>3<br>The FS8G to FS8M series offers breakthrough size and<br>yy,<br>performance. It sinks 8 A DC forward current and provides up to<br>230 A surge current capability with only 0.37 A reverse leakage<br>current. All this capability is packed into a small, flat−lead, TO−277 2<br>package, optimized for space−constrained applications. D<Y 1<br>TO−277−3LD<br>CASE 340BQ<br>Features<br>• Very High forward Surge Capability: IFSMFSM = 230 A<br>• Low Leakage Current: 0.37 A at TAA = 25°C°CC MARKING DIAGRAM<br>• Very Low Profile: Typical Height of 1.1 mm<br>• Glass Passivated Junction $Y&Z&3<br>*<br>• HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2 KV<br>• Green Molding Compound as per IEC61249 Standard | |<br>• With DAP Option Only $Y = onsemi Logo<br>&Z = Assembly Plant Code<br>• These Devices are Pb−Free, Halogen Free Free and are RoHS &3 = Date Code (Year & Week)<br>Compliant * = Specific Device Code<br> FS8G, FS8J, FS8K, FS8M<br>**----- End of picture text -----**<br>
## **Description**
## **Features**
- Very High forward Surge Capability: IFSMFSM = 230 A
- Low Leakage Current: 0.37 A at TAA = 25°C°CC
- Very Low Profile: Typical Height of 1.1 mm
- Glass Passivated Junction
- HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2 KV
- Green Molding Compound as per IEC61249 Standard
- With DAP Option Only
- These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant
## **Applications**
- General−Purpose Applications
- Reverse Polarity Protection
- Rectifications
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 3 of this data sheet.
Publication Order Number: **FS8M/D**
**1**
© Semiconductor Components Industries, LLC, 2015 **May, 2023 − Rev. 6**
**FS8G − FS8M**
**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted)
|**ABSOLUT**|**E MAXIMUM RATINGS**(TA= 25°C unless otherwis|e noted)|e noted)|e noted)|e noted)||
|---|---|---|---|---|---|---|
|**Symbol**|**Rating**|**Value**||||**Unit**|
|||**FS8G**|**FS8J**|**FS8K**|**FS8M**||
|VRRM|Maximum Repetitive Peak Reverse Voltage|400|600|800|1000|V|
|VRMS|Maximum RMS Reverse Voltage|280|420|560|700|V|
|VDC|DC Blocking Voltage|400|600|800|1000|V|
|IF(AV)|Maximum Average Rectified Forward Current|8||||A|
|IFSM|Peak Forward Surge Current: 8.3 ms Single Half<br>Sine−Wave Superimposed on Rated Load|230||||A|
|TJ|Operating Junction Temperature Range|−55 to +150||||°C|
|TSTG|Storage Temperature Range|−55 to +150||||°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
**THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Note 1)
|**Symbol**|**Characteristic**|**Minimum**<br>**Land Pattern**|**Maximum**<br>**Land Pattern**|**Unit**|
|---|---|---|---|---|
|R�JA|Junction−to−Ambient Thermal Resistance|100|40|°C/W|
|ΨJL|Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode|20|12|°C/W|
||Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode|6|5||
1. The thermal resistances (R � JA & Ψ JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils.
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F<br>S<br>F F<br>S S<br>**----- End of picture text -----**<br>
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F<br>S<br>F<br>S<br>**----- End of picture text -----**<br>
**Figure 1. Minimum Land Pattern of 2 oz Copper**
**Figure 2. Maximum Land Pattern of 2 oz Copper**
**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRI**|**CAL CHARACTERISTICS**(TA= 25|°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VF|Forward Voltage|IF= 8 A|−|0.951|1.1|V|
|||IF= 8 A, TA= 125°C||0.845|||
|IR|DC Reverse Current|VR= VDC|−|0.37|5|�A|
|||VR= VDC,TA= 125°C||84|||
|Trr|Reverse Recovery Time|IF= 0.5 A, IR= 1 A, Irr= 0.25 A||3.37||�s|
|CJ|Junction Capacitance|VR= 0 V, f = 1 MHz||118||pF|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
**www.onsemi.com**
**2**
**FS8G − FS8M**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Top Mark**|**Package**|**Shipping**†|
|FS8G|FS8G|TO−277 3L<br>(DAP Option)<br>(Pb−Free/Halogen Free)|5000 / Tape & Reel|
|FS8J|FS8J|TO−277 3L<br>(DAP Option)<br>(Pb−Free/Halogen Free)|5000 / Tape & Reel|
|FS8K|FS8K|TO−277 3L<br>(DAP Option)<br>(Pb−Free/Halogen Free)|5000 / Tape & Reel|
|FS8M|FS8M|TO−277 3L<br>(DAP Option)<br>(Pb−Free/Halogen Free)|5000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**3**
**FS8G − FS8M**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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9<br>TL (Cathode, Min. Pad)<br>8<br>7<br>6<br>5<br>4 TA (3 cm x 3 cm Pad)<br>3<br>2 TA (Min. Pad)<br>1<br>0<br>0 25 50 75 100 125 150 175<br>, Average Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>
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Ambient / Lead Temperature ( � C)<br>**----- End of picture text -----**<br>
**Figure 3. Forward Current Derating Curve**
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1000 TA = 150 ° C<br>100<br>TA = 125 ° C<br>10<br>1 T A = 75 ° C<br>0.1 TA = 25 ° C<br>0.01<br>TA = −55 ° C<br>1E−3<br>0 100 200 300 400 500 600 700 800 900 1000<br>VR, Reverse Voltage (V)<br>Figure 5. Typical Reverse Characteristics<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>1 10 100<br>Number of Cycles<br>A)<br>�<br>, Reverse Current (<br>IR<br>Peak Forward Surge Current (A)<br>**----- End of picture text -----**<br>
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1000<br>100<br>10<br>0.1 1 10 100<br>VR, Reverse Voltage (V)<br>Figure 4. Typical Junction Capacitance<br>TA = 75 ° C<br>10<br>TA = 125 ° C<br>TA = 150 ° C<br>TA = 25 ° C<br>TA = −55 ° C<br>1<br>0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VF, Forward Voltage (V)<br>, Junction Capacitance (pF)<br>J<br>C<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>
**Figure 6. Typical Forward Characteristics**
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10000<br>1000<br>100<br>10 100 1000 10000<br>Tp, Square Waveform Pulse Duration ( � s)<br> Surge Current (A)<br>IFSM, Non−Repetitive Forward<br>**----- End of picture text -----**<br>
NOTE: Typical performance bases on a limited sample size, not guarantee rating.
**Figure 7. Maximum Non−Repetitive Peak Forward Surge Current**
**Figure 8. Typical Non−Repetitive Forward Surge Current**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **TO−277−3 5.91x4.44x1.10, 2.10P**
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CASE 340BQ<br>ISSUE A<br>**----- End of picture text -----**<br>
## DATE 16 APR 2026
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**DOCUMENT NUMBER: 98AON13861G**
**DESCRIPTION: TO−277−3 5.91x4.44x1.10, 2.10P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
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Updated at April 14, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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