![FS820R08A6P2LBBPSA1 — IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 714 W, 175 °C, Module](/media/4/2/9/86C7115AD4E60924.webp)
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FS820R08A6P2LBBPSA1
IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 714 W, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: HybridPACK
- IGBT Technology: IGBT EDT2 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 714W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 450A
- Power Dissipation Pd: 714W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Voltage V(br)ceo: 750V
- Collector Emitter Saturation Voltage: 1.1V
- Collector Emitter Saturation Voltage Vce(on): 1.1V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 311.57 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# FS820R08A6P2LB HybridPACK™ **FS820R08A6P2LB** Drive Module **==> picture [203 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> T<br>T<br>KE Ke T<br>VCES = 750 V<br>IC = 820 A<br>**----- End of picture text -----**<br> ## **Description** - - - - - • CEsat **==> picture [5 x 3] intentionally omitted <==** • • - T - • T **==> picture [5 x 3] intentionally omitted <==** - - - - - - - The HybridPACK[TM] Drive is a very compact six-pack module (750V/820A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new HybridPACK[TM] Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure in the FS820R08A6P2LB product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. - - FS820R08A6P2LB SP001611366 Final Data Sheet 2 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **2�����IGBT,Inverter** ## **2.1����Maximum�Rated�Values** |**2.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Collector-emittervoltage|Tvj= 25°C|VCES||750||V| |Implementedcollectorcurrent||ICN||820||A| |ContinuousDCcollectorcurrent|TF= 80°C, Tvj max= 175°C|IC nom||4501)||A| |Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM||1640||A| |Totalpowerdissipation|TF= 75°C, Tvj max= 175°C|Ptot||7141)||W| |Gate-emitterpeakvoltage||VGES||+/-20||V| |**2.2CharacteristicValues**|||min.|typ.|max.|| |Collector-emittersaturationvoltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 820 A, VGE= 15 V Tvj= 25°C<br>IC= 820 A, VGE= 15 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.10<br>1.15<br>1.15<br>1.30<br>1.50|1.35|V| |Gatethresholdvoltage|IC= 9.60 mA, VCE= VGE<br>Tvj= 175°C<br>Tvj= 25°C|VGEth|4.90|5.80<br>4,10|6.50|V| |Gatecharge|VGE= -8 V ... 15 V, VCE= 400V|QG||4.40||µC| |Internalgateresistor|Tvj= 25°C|RGint||0.7||Ω| |Inputcapacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cies||80.0||nF| |Outputcapacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Coes||1.00||nF| |Reversetransfercapacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.30||nF| |Collector-emittercut-offcurrent|VCE= 750 V, VGE= 0 V<br>VCE= 750 V, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C|ICES||5|1.0|mA| |Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA| |Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.28<br>0.29<br>0.30||µs| |Risetime,inductiveload|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.07<br>0.08<br>0.08||µs| |Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.94<br>1.05<br>1.05||µs| |Falltime,inductiveload|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.04<br>0.05<br>0.06||µs| |Turn-onenergylossperpulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>di/dt (Tvj25°C) = 5500 A/µs<br>di/dt (Tvj150°C) = 5000 A/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||13.5<br>17.5<br>18.0||mJ| |Turn-offenergylossperpulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>dv/dt (Tvj25°C) = 3100 V/µs<br>dv/dt (Tvj150°C) = 2500 V/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||23.5<br>29.0<br>30.0||mJ| |SCdata|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 175°C<br>tP ≤6 µs,<br>tP ≤3 µs,|ISC||4800<br>3900||A| |Thermalresistance,junctiontocoolingfluid|perIGBT;∆V/∆t=10dm³/min,TF=75°C|RthJF||0.1202)|0.1402)|K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| > 1) Verified by characterization / design not by test. - 2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 V3.3,��2019-07-10 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **3�����Diode,�Inverter** ## **3.1����Maximum�Rated�Values** |**3.1MaximumRatedValues**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Repetitivepeakreversevoltage|Tvj= 25°C|VRRM||750||V| |Implementedforwardcurrent||IFN||820||A| |ContinuousDCforwardcurrent||IF||4501)||A| |Repetitivepeakforwardcurrent|tP= 1 ms|IFRM||1640||A| |I²t-value|VR= 0 V, tP= 10 ms, Tvj= 150°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t||19000<br>16000||A²s<br>A²s| |**3.2CharacteristicValues**|||min.|typ.|max.|| |Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 820 A, VGE= 0 V Tvj= 25°C<br>IF= 820 A, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.45<br>1.30<br>1.25<br>1.70<br>1.60|1.65|V| |Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||250<br>350<br>370||A| |Recoveredcharge|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||20.0<br>40.0<br>45.0||µC| |Reverserecoveryenergy|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||7.00<br>13.0<br>15.0||mJ| |Thermalresistance,junctiontocoolingfluid|perdiode;∆V/∆t=10dm³/min,TF=75°C|RthJF||0.1752)|0.2002)|K/W| |Temperatureunderswitchingconditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| ## **4�����NTC-Thermistor** |||||||| |---|---|---|---|---|---|---| |**4NTC-Thermistor**|||min.|typ.<br>max.||| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Ratedresistance|TC= 25°C|R25||5.00||kΩ| |DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|5||5|%| |Powerdissipation|TC= 25°C|P25|||20.0|mW| |B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Specification�according�to�the�valid�application�note. > 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet V3.3,��2019-07-10 4 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **5�����Module** |**5Module**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**||**Value**||**Unit**| |Isolationtestvoltage|RMS, f = 0 Hz, t = 1 sec|VISOL|4.2<br>|||kV| |MaximumRMSmoduleterminalcurrent|TF= 75°C, TCt= 105°C|ItRMS||5001)||A| |Materialofmodulebaseplate|||Cu+Ni2)|||| |Internalisolation|basicinsulation(class1,IEC61140)||Al2O33)|||| |Creepagedistance|terminaltoheatsink<br>terminaltoterminal|dCreep|9.0<br>9.0<br>|||mm| |Clearance|terminaltoheatsink<br>terminaltoterminal|dClear|4.5<br>4.5<br>|||mm| |Comperativetrackingindex||CTI||> 200||| ||||min.|typ.<br>max.||| |Pressuredropincoolingcircuit|∆V/∆t = 10.0 dm³/min; TF= 75°C|∆p||644)||mbar| |Maximumpressureincoolingcircuit|Tbaseplate< 40°C<br>Tbaseplate> 40°C<br>(relative pressure)|p|||2.5<br>2.0|bar| |Strayinductancemodule||LsCE||8.0||nH| |Moduleleadresistance,terminals-chip|TF=25°C,perswitch|RCC'+EE'||0.75||mΩ| |Storagetemperature||Tstg|-40||125|°C| |Mountingtorqueformodulmounting|ScrewM4baseplatetoheatsink<br>ScrewEJOTDeltaPCBtoframe|M|1.80<br>0.45|2.00<br>0.50|2.20<br>0.555)|Nm| |Weight||G||800||g| > 1) Continous, steady state. Verified by characterization / design not by test. > 2) Ni plated Cu baseplate. > 3) Improved Al2O3 ceramic. > 5) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY 4) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. Final Data Sheet V3.3,��2019-07-10 5 HybridPACK™ **FS820R08A6P2LB** Drive Module **==> picture [504 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> IC CE) IC CE)<br>VGE Tvj<br>: “5 Vv = 150°C<br>1600 1600<br>1500 [e Tvj ee = 25°C a 1500 — VGE = 19V _<br>Tvj = 150°C VGE = 17V<br>1400 = Tvj = 175°C feepe ce 1400 | VGE = 15V I LIF 1<br>VGE = 13V<br>1300 M a o ELL _ 1300 VGE = 11V TWILL<br>VGE = 9V<br>1200 PEEL EET IV 1200 Wey<br>1100 PELE LYALL 1100 r e<br>1000 PETTY ye 1000 W ee<br>ee a Pa ee<br>900 900<br>800 PELL 800 PT i<br>700 PELL EL 700 IZ<br>600 ee 600 PTww<br>500400 nnn)PELL TALL zn 500400 eene 2Ane<br>300 PPE YeELLe Ee 300 neae<br>200 TT AT 200 PT Wee<br>100 100<br>ean Ane aAne<br>0 a 2 ae 0 On 4<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C),<br>VCE =20V VGE =+15V/-8V,R Gon =24 Ω ,R Goff =51 Ω ,V CE =400V<br>1600 70<br>1500 [e Tvj en = 25°C Al a = Eon, Tvj = 150°C 7<br>Tvj = 150°C Eoff, Tvj = 150°C<br>1400 Tvj = 175°C Eon, Tvj = 175°C<br>60 Eoff, Tvj = 175°C<br>1300<br>PS Hf<br>1200<br>e e e e<br>50<br>1100 ee es ;<br>1000<br>900 e es eeee / 40 yt) ty ye<br>800<br>700 ee ee 30 d vA<br>600 ee ee ard<br>500<br>ee sa of Ea<br>20<br>400<br>ee ee PA<br>300<br>10<br>200 TT fT v7 LY<br>1000 ee e eee 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> Final Data Sheet 6 HybridPACK™ **FS820R08A6P2LB** Drive Module **==> picture [502 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G), ZthJF =f(t), cooler design according to AN-HPD-ASSEMBLY<br>VGE =+15V/-8V,| C =450A,V CE =400V ∆ V/ ∆ t = 10 dm*/min; Tf = 75°C; 50% water / 50% ethylenglycol<br>140 1<br>= a<br>Eon, Tvj = 150°C ZthJF : IGBT<br>Eoff, Tvj = 150°C (T [|rionTIT =6T TT =~—hT hE LT TTT<br>Eon, Tvj = 175°C C e<br>120 E Eoff, Tvj = 175°C Le _— e e e el<br>a, Ee Ce<br>100 To h)eA ee o rlll<br>ye CIEL<br>0,1<br>a ee<br>a ee a ee ee<br>80 TEL) | | 4MLay4 eePT TT eerreee eL e e e<br>60 Til) ARLE yy aETE| OTT TT<br>0,01<br>40 Aer)/Ve iad STOCTETeo oo<br>ue [~ (7 | TTI fT TitiTTT]<br>wf [=] ee sae YoPe | Ti I ne<br>20 i: 1 2 3 4<br>ri[K/W]: 0,005 0,05 0,065 0,02<br>τ i[s]: 0,001 0,03 0,25 1,5<br>AEE EEE CHYAio lorl<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>reverse bias safe operating area IGBT,Inverter (RBSOA) thermal impedance IGBT, Inverter<br>IC =f(V CE) RthJF =f ( ∆ V/ ∆ t), cooler design according to AN-HPD-Assembly<br>VGE =+15V/-8V,R Goff =5,1 Ω ,T vj =175°C Tf = 75°C; 50% water / 50% ethylenglycol<br>1700 0,152<br>1600 RthJF: IGBT<br>1500 PtSSEE 7 «C 0,150 ULE LL c e| —T7_|<br>1400<br>ff tts N EE<br>1300 Pot tlEE 0,148<br>1200<br>1100 PtpfEErr 0,146 EN EEE EE<br>1000<br>ee ee<br>0,144<br>900 Pt EE<br>a a<br>800<br>0,142<br>700 Pot tl EE SS<br>600 Ss Oe ee ee eo OO<br>0,140<br>500<br>400 PteEE e aNI<br>0,138<br>300 IC, Modul<br>IC, Chip<br>200 Ae FE teeNT este 0,136 OL LLL Lee~<br>F ee<br>100<br>a EEE<br>0 C OLL 0,134 EEE<br>0 100 200 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 13 14<br>VCE [V] ∆ V/ ∆ t [dm³/min]<br> [K/W]<br>E [mJ] thJF<br>Z<br> [A] [K/W]<br>IC<br>thJF<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 HybridPACK™ **FS820R08A6P2LB** Drive Module **==> picture [503 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> capacity CE) characteristic IGBT,Inverter (typical) V gate GE charge G) characteristic IGBT, Inverter (typical)<br>V oy. GE vj = 25°C, f = 1MHz VCE = MOOV. | C =450A,T vj = 25°C<br>100 15<br>ea a T — QG /<br>Cies<br>a Coes _| 12<br>Cres<br>SS ef HS]<br>ee ee ee ee ee 9<br>10<br>S e 6 ee e ee<br>po<br>[a 3<br>0<br>SO oe|<br>1<br>A | ft<br>a ee<br>-3<br>SSS |/ [|]]<br>a<br>-6<br>eeee<br>SE E} KET<br>0,1 -9<br>0 100 200 300 400 500 0 1 2 3 4 5<br>VCE [V] QG [µC]<br>V maximum CES = f(Tvj allowed ), verified by characterization / design not by test collector-emitter voltage fom. IF F characteristic of ) Diode, Inverter (typical)<br>ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C<br>800 1600<br>=a VCES 1500 S Tvj = 25°C LL LLL<br>Tvj = 150°C<br>1400 Tvj = 175°C<br>| I | tT | | tt<br>775 pr s]<br>1300<br>1200 Pt | | | hdl Lt<br>1100 PF | ftttttct | | |<br>750<br>1000<br>/ FP | tt | | dT |<br>900<br>// Se<br>725 800<br>/ pot | | |<br>700<br>pi i tT | |<br>600 Pt | | | | | ce tt<br>700<br>500 | | tt | | dT AL TT<br>400 Pt | | | | cp |<br>300 Ft | | | dP vA |<br>675<br>200 Pt | tT EY |<br>100<br>Pt | | ber A |<br>650 0 | |f eet| | |<br>-50 -25 0 25 50 75 100 125 150 175 200 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>Tvj [°C] VF [V]<br> [V]<br>GE<br>C [nF] V<br> [V]<br> [A]<br>CES IF<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 8 **FS820R08A6P2LB** HybridPACK™ Drive Module **==> picture [502 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F), Erec =f(R G),<br>RGon =24 Ω ,V CE =400V IF =450A,V CE =400V<br>22 20<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>20 Erec, Tvj = 175°C 18 Erec, Tvj = 175°C<br>1816 Seed | | |ee 16 STE<br>Pt 7 14 \<br>14 | | ppt<br>Pf y L— - 12 ANE ELEEE<br>12 pp 4 EAE<br>ran 10 ERNSEEEEEEEE<br>is A] \\<br>10<br>8<br>8 Pty | | Pt NeA<PEEE<br>6<br>6<br>yee OL EE [Peet]<br>4<br>4 ALLELE] OLE EPS<br>Cee<br>2 2<br>0 0<br>0 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [502 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJF = f(t), cooler design according to AN-HPD-ASSEMBLY RthJF =f( ∆ V/ ∆ t), cooler design according to AN-HPD-ASSEMBLY<br>∆ V/ ∆ t = 10 dm*/min; Tf = 75°C; 50% water / 50% ethylenglycol Tf = 75°C; 50% water / 50% ethylenglycol<br>1 0,214<br>ZthJC : Diode RthJF: Diode<br>H— A i<br>a a ee 0,212 a<br>a a eeel<br>0,210<br>Ha t A\<br>0,208<br>0,1 mim =| EN EE [EE]<br>eTA 0,206 \<br>|PT TTT AZ TTT TT TTT Py NT}\ FP yf]<br>0,204<br>ac \x<br>PAT ETE ET PT Py FPN EY ff<br>0,202<br>ee<br>0,01<br>a ee eeee<br>ee 0,200 aN<br>ee<br>eea el Py fy} PMEm™ dS]<br>0,198<br>i: 1 2 3 4<br>r τ ii[K/W]:[s]: 0,0150,001 0,10,03 0,0650,25 0,021,5 0,196<br>oot ne<br>0,001 0,194<br>0,001 0,01 0,1 1 10 4 5 6 7 8 9 10 11 12 13 14<br>t [s] ∆ V/ ∆ t [dm³/min]<br> [K/W] [K/W]<br>thJC thJF<br>Z R<br>**----- End of picture text -----**<br> Final Data Sheet 9 **FS820R08A6P2LB** HybridPACK™ Drive Module |R=f(T)||∆<br>∆V/∆<br>p=f(<br>t),<br>cooler design according toAN-HPD-ASSEMBLY|∆<br>∆V/∆<br>p=f(<br>t),<br>cooler design according toAN-HPD-ASSEMBLY|| |---|---|---|---|---| |||Tf|= 75°C; 50% water /50% ethylenglycol|| |100000|||120|| ||Rtyp||∆p: Modul|| |R[Ω]<br>1000<br>10000<br>∆p [mbar]<br>40<br>60<br>80<br>100<br>Re<br>e~~e~~<br>rT.<br>~~ee~~ ee ee<br>Pot tt<br>PT<br>I<br>KEEL) te} EPP<br>==<br>enna<br>A<br>/ |<br>Ns<br>PINES<br>CEE EEEL<br>PoE NET<br>A<br>Neeee<br>P|}<br>|<br>ft<br>|<br>vy yf |<br>ERNE<br>/<br>NI<br>Pt<br>| tw<br>tt<br>a||||| |NT<br>po<br>NT<br>oe<br>a|||20<br>WA,<br>WA<br>(el|| |100|||0|| |0<br>20<br>40<br>60<br>80<br>100<br>120<br>140<br>160|||4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>12<br>13<br>14|| ||TC[°C]||∆V/∆t [dm³/min]|| Final Data Sheet 10 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **7�����Circuit�diagram** **==> picture [477 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> P3 P2 P1<br>T11<br>C5 C3 C1<br>T<br>T12<br>G5 G3 G1<br>E5 E3 E1 T21<br>3 2 1 T<br>C6 C4 C2<br>T22<br>G6 G4 G2 T31<br>E6 E4 E2 T<br>T32<br>N3 N2 N1<br>**----- End of picture text -----**<br> Final Data Sheet 11 V3.3,��2019-07-10 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **8�����Package�outlines** **==> picture [507 x 629] intentionally omitted <==** **----- Start of picture text -----**<br> B j5,30 [c][0,15] ~ q0,6 F G<br>m A<br>q1,6 B C<br>F G 6x(N1-N3;P1-P3)<br>6x D 14,006x [c][0,2] q5,50 [c][0,1]<br>1,00 [c][0,15] 22,25 [c][0,4] 16,00 [c][0,2] 6x<br>16,25 6x<br>q0,5 D E<br>B 9,755,00 [c][c][0,4][0,4] N1 Y P1 N2 P2 N3 P3 m q1,6 A B C<br>0,00 0,00 X 0,00 8x<br>15,50 [c][0,5] D<br>C2 E2 G2 C4 E4 G4 C6 E6 G6<br>4,00 [c][0,3]<br>6,00 - 0,2<br>6,35 [c][0,5] T1 T3 T5<br>T2 T4 T6<br>66,50 [c][0,5] G1 E1 C1 G3 E3 C3 G5 E5 C5<br>A<br>82,00 82,00<br>87,00 [c][0,4] U V W<br>C 90,75 [c][0,4] C<br>E<br>1,00 [c][0,15]<br>3x<br>114,25 3x<br>120,25 [c][0,4] H 14,3x00 [c][0,2] q5,50 [c][0,1]<br>m 0,6 A H I<br>1,6 B C<br>I 3x(U;V;W)<br>B<br>X-Y ( 1 : 1 ) L D2 D3 D4 8x<br>9,308x [c][0,2] D1 Y N1 P1 N2 P2 N3 P3 m q0,8 A L M<br>0,00 q1,6 B C<br>f 0,4 CZ A 8,00 M<br>all 8 domes X<br>dimensioned for 18,85 C2 E2 G2 C4 E4 G4 C6 E6 [G6]<br>EJOT Delta PT WN5451 30 x J Z K<br>origin axis generated by<br>C2;E2;G2;C4;E4;G4;C6;E6;G6<br>51,85 T1 T3 T5<br>59,35 T2 T4 T6<br>G1 E1 G3 E3 G5 E5<br>67,15 C1 C3<br>69,85 C5<br>3,94 +- 0,50,3 74,10<br>refers 82,00<br>to CZ U V W C<br>D8 D7 D6 D5<br>(19,75) Z ( 1,5 : 1 )<br>Drawing: D00099554<br>edges general toler surface m q0,8 A K J<br>DIN ISO 13715 167421. DIN -TG4 DIN EN ISO 1302 24xq1,8 B C<br>2. DIN ISO<br>2768-mK C2 E2 G2 Signal Pin to Signal<br>All dimensions refer to module in Pin tolerances<br>delivery condition<br>0,4c 0,4c 0,4 c 0,4 c<br>0,3 c 0,4 c 0,4c<br>26,25 25,00 20,00 5,70 0,00 13,30 27,33 41,30 60,30 74,67 88,30 107,30 122,00 127,00 128,25<br>26,00 10,10 7,60 0,00<br>0,3<br> c<br>508, 0,15<br>c<br>4,50 8x<br>q<br>0,15<br> c<br>4,30<br>0,2<br> c<br>3x<br>32,00<br>0,4<br>22,00 c 0,00 )<br>7,60 20,00 0,00 8,30 27,33 55,30 74,67 (87,00 102,30 122,00<br>reference plane<br>23,25 12,20 0,00 4,00 8,05 27,35 34,80 51,00 55,05 74,65 81,80 98,00 102,05 125,25<br>(15,81) 0,00<br>23,25 10,25 6,20 0,00 21,95 23,35 27,35 36,75 40,80 68,95 70,35 74,65 83,75 87,00 87,80 115,95 117,35 125,25<br>**----- End of picture text -----**<br> Final Data Sheet 12 V3.3,��2019-07-10 **FS820R08A6P2LB** HybridPACK™ Drive Module Data Matrix **Encoding** ASCII Text 16x16 **Standard** IEC24720 and IEC16022 **Content Digit** Module Serial Number 1 - 5 71549 Module Material Number 6 - 11 142846 Production Order Number 12 - 19 55054991 Datecode (Production Year) 20 - 21 15 Datecode (Production Week) 22 - 23 30 ~~_ P| —~~ **Example** ay 71549142846550549911530 9.2 Packing Code Code128 **Encoding** Code Set A 34 digits **Standard** IEC8859-1 **Content Identifier Digit** Backend Construction Number X 2 - 9 95056609 Production Lot Number 1T 12 - 19 2X0003E0 Serial Number S 21 - 25 754389 Date Code 9D 28 - 31 1139 Box Quantity Q 33 - 34 15 ~~_ P| —~~ **Example** X950566091T2X0003E0S754389D1139Q15 Final Data Sheet 13 **FS820R08A6P2LB HybridPACKª�Drive�Module** **==> picture [146 x 64] intentionally omitted <==** ## **Revision�History** Major changes since previous revision |Revision History|Revision History|| |---|---|---| |**Reference**|**Date**|**Description**| |V3.0|2017-03-23|Final datasheet| |V3.1|2019-06-18|Adjustment of package outlines| |V3.2|2019-06-26|Adjustment of package outlines| |V3.3|2019-07-10|Adjustment of package outlines; Correction of typing errors.| Final Data Sheet 14 V3.3,��2019-07-10 ## **FS820R08A6P2LB** HybridPACK™ Drive Module ## **Information** (http://www.infineon.com) ## **Warnings** ## **Trademarks** Last update 2011-11-11 Final Data Sheet 15
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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