![FS820R08A6P2BPSA1 — IGBT Module, Six Pack [Full Bridge], 820 A, 1.3 V, 714 W, 150 °C, Module](/media/0/2/8/72E20E4ECFED0820.webp)
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FS820R08A6P2BPSA1
IGBT Module, Six Pack [Full Bridge], 820 A, 1.3 V, 714 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: HybridPACK
- IGBT Technology: IGBT EDT2
- IGBT Termination: Press Fit
- Power Dissipation: 714W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 820A
- Power Dissipation Pd: 714W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 820A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Voltage V(br)ceo: 750V
- Collector Emitter Saturation Voltage: 1.3V
- Collector Emitter Saturation Voltage Vce(on): 1.3V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 552.35 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# FS820R08A6P2
**FS820R08A6P2** HybridPACK™ Drive Module
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T<br>T<br>T<br>VCES = 750 V<br>IC = 820 A<br>**----- End of picture text -----**<br>
## Typical Applications
- •Automotive Applications
- •Hybrid Electrical Vehicles (H)EV
- •Motor Drives
- •Commercial Agriculture Vehicles
## Electrical Features
- •Blocking voltage 750V
- •Low VCEsat
- •Low Switching Losses
- •Low Qg and Crss
- •Low Inductive Design
- •Tvj op = 150°C
• Short-time extended Operation Temperature vj op
## Mechanical Features
- •4.2kV DC 1sec Insulation
- •High Creepage and Clearance Distances
- •Compact design
- •High Power Density
- •Direct Cooled PinFin Base Plate
- •Guiding elements for PCB and cooler assembly
- •Integrated NTC temperature sensor
- •PressFIT Contact Technology
## Description
The HybridPACK[TM] Drive is a very compact six-pack module (750V/820A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
The new HybridPACK[TM] Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure in the FS820R08A6P2 product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches.
- •RoHS compliant
- •UL 94 V0 module frame
|Product Name|OrderingCode|
|---|---|
|FS820R08A6P2|SP001499702|
Final Data Sheet
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## 2 IGBT,Inverter
## 2.1 Maximum Rated Values
|2 IGBT,Inverter<br>2.1 Maximum Rated Values|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Collector-emitter voltage|Tvj= 25°C|VCES||750||V|
|Implemented collector current||ICN||820||A|
|Continuous DC collector current|TF= 80°C, Tvj max= 175°C|IC nom||4501)||A|
|Repetitive peak collector current|tP= 1 ms|ICRM||1640||A|
|Total power dissipation|TF= 75°C, Tvj max= 175°C|Ptot||7141)||W|
|Gate-emitter peak voltage||VGES||+/-20||V|
|2.2 Characteristic Values|||min.|typ.|max.||
|Collector-emitter saturation voltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 820 A, VGE= 15 V Tvj= 25°C<br>IC= 820 A, VGE= 15 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.10<br>1.15<br>1.15<br>1.30<br>1.50|1.35|V|
|Gate threshold voltage|IC= 9.60 mA, VCE= VGE<br>Tvj= 175°C<br>Tvj= 25°C|VGEth|4.90|5.80<br>4,10|6.50|V|
|Gate charge|VGE= -8 V ... 15 V, VCE= 400V|QG||4.40||µC|
|Internal gate resistor|Tvj= 25°C|RGint||0.7||Ω|
|Input capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cies||80.0||nF|
|Output capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Coes||1.00||nF|
|Reverse transfer capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.30||nF|
|Collector-emitter cut-off current|VCE= 750 V, VGE= 0 V<br>VCE= 750 V, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C|ICES||5|1.0|mA|
|Gate-emitter leakage current|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA|
|Turn-on delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.28<br>0.29<br>0.30||µs|
|Rise time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.07<br>0.08<br>0.08||µs|
|Turn-off delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.94<br>1.05<br>1.05||µs|
|Fall time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.04<br>0.05<br>0.06||µs|
|Turn-on energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>di/dt (Tvj25°C) = 5500 A/µs<br>di/dt (Tvj150°C) = 5000 A/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||13.5<br>17.5<br>18.0||mJ|
|Turn-off energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>dv/dt (Tvj25°C) = 3100 V/µs<br>dv/dt (Tvj150°C) = 2500 V/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||23.5<br>29.0<br>30.0||mJ|
|SC data|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 175°C<br>tP ≤6 µs,<br>tP ≤3 µs,|ISC||4800<br>3900||A|
|Thermal resistance, junction to cooling fluid|per IGBT;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.1202)|0.1402)|K/W|
|Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C|
> 1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3
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## 3 Diode, Inverter
## 3.1 Maximum Rated Values
|3 Diode, Inverter<br>3.1 Maximum Rated Values|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Repetitive peak reverse voltage|Tvj= 25°C|VRRM||750||V|
|Implemented forward current||IFN||820||A|
|Continuous DC forward current||IF||4501)||A|
|Repetitive peak forward current|tP= 1 ms|IFRM||1640||A|
|I²t - value|VR= 0 V, tP= 10 ms, Tvj= 150°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t||19000<br>16000||A²s<br>A²s|
|3.2 Characteristic Values|||min.|typ.|max.||
|Forward voltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 820 A, VGE= 0 V Tvj= 25°C<br>IF= 820 A, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.45<br>1.30<br>1.25<br>1.70<br>1.60|1.65|V|
|Peak reverse recovery current|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||250<br>350<br>370||A|
|Recovered charge|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||20.0<br>40.0<br>45.0||µC|
|Reverse recovery energy|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||7.00<br>13.0<br>15.0||mJ|
|Thermal resistance, junction to cooling fluid|per diode;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.1752)|0.2002)|K/W|
|Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C|
## - 4 NTC Thermistor
||||||||
|---|---|---|---|---|---|---|
|4 NTC-Thermistor|||min.|typ.|max.||
|Parameter|Conditions|Symbol||Value||Unit|
|Rated resistance|TC= 25°C|R25||5.00||kΩ|
|Deviation of R100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Power dissipation|TC= 25°C|P25|||20.0|mW|
|B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Specification according to the valid application note.
> 1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
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Final Data Sheet
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FS820R08A6P2 HybridPACK™ Drive Module
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## 5 Module
|5 Module|||||||
|---|---|---|---|---|---|---|
|Parameter|Conditions|Symbol||Value||Unit|
|Isolation test voltage|RMS, f = 0 Hz, t = 1 sec|VISOL||4.2<br>||kV|
|Maximum RMS module terminal current|TF= 75°C, TCt= 105°C|ItRMS||5001)||A|
|Material of module baseplate||||Cu+Ni2)|||
|Internal isolation|basic insulation (class 1, IEC 61140)|||Al2O33)|||
|Creepage distance|terminal to heatsink<br>terminal to terminal|dCreep||9.0<br>9.0||mm|
|Clearance|terminal to heatsink<br>terminal to terminal|dClear||4.5<br>4.5||mm|
|Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Pressure drop in cooling circuit|∆V/∆t = 10.0 dm³/min; TF= 75°C|∆p||644)||mbar|
|Maximum pressure in cooling circuit|Tbaseplate< 40°C<br>Tbaseplate> 40°C<br>(relative pressure)|p|||2.5<br>2.0|bar|
|Stray inductance module||LsCE||8.0||nH|
|Module lead resistance, terminals - chip|TF= 25 °C, per switch|RCC'+EE'||0.75||mΩ|
|Storage temperature||Tstg|-40||125|°C|
|Mounting torque for modul mounting|Screw M4 baseplate to heatsink<br>Screw EJOT Delta PCB to frame|M|1.80<br>0.45|2.00<br>0.50|2.20<br>0.555)|Nm|
|Weight||G||720||g|
> 1) Continous, steady state. Verified by characterization / design not by test.
> 2) Ni plated Cu baseplate.
> 3) Improved Al2O3 ceramic.
> 5) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY
4) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
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Final Data Sheet
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FS820R08A6P2 HybridPACK™ Drive Module
## 6 Characteristics Diagrams
output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V
output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C
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1600 1600<br>1500 L Tvj = 25°C LL 1500 S VGE = 19V one<br>Tvj = 150°C VGE = 17V<br>1400 —Ef T e vj = 175°C epeceA 1400 | VGE = 15V<br>VGE = 13V<br>1300 b e 1300 | VGE = 11V EE<br>VGE = 9V<br>1200 | 1200 a<br>1100 1100<br>Cee eee, ( So<br>1000 a 1000<br>a<br>900 900<br>a<br>800 800<br>a AY<br>Se A<br>700 700<br>a 7AeyA<br>600 600<br>a A7<br>500 500<br>400 2 400 /<br>a<br>300 300<br>200 CHEAPEST) 200 6S pee SS<br>100 100<br>CHeeray7EEE Ey) =Ee<br>ey<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V
switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V
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1600 70<br>1500 S Tvj = 25°C LL LL = Eon, Tvj = 150°C :<br>Tvj = 150°C Eoff, Tvj = 150°C<br>1400 Tvj = 175°C Eon, Tvj = 175°C<br>60 Eoff, Tvj = 175°C<br>1300<br>e e e e a Z<br>1200<br>e e e e<br>50<br>1100 A :<br>1000<br>900 eeee eeeee / 40 yt) ty | ye<br>800<br>700 30<br>600 Te TT ro?<br>500<br>ee A A<br>20<br>400<br>ee 7 PA<br>300<br>10<br>200 a ae<br>100<br>ee<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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Final Data Sheet
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FS820R08A6P2 HybridPACK™ Drive Module
switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V
transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol
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140 1<br>Eon, Tvj = 150°C ZthJF : IGBT<br>Eoff, Tvj = 150°C<br>Eon, Tvj = 175°C<br>120 Eoff, Tvj = 175°C<br>100 Toh). |) 14 CEE AEA<br>0,1<br>80<br>60<br>0,01<br>40<br>20 i: 1 2 3 4<br>ri[K/W]: 0,005 0,05 0,065 0,02<br>τ i[s]: 0,001 0,03 0,25 1,5<br>ATLL) t ito<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ] thJF<br>Z<br>**----- End of picture text -----**<br>
reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C
thermal impedance IGBT,Inverter
RthJF = f (∆V/∆t), cooler design according to AN-HPD-Assembly Tf = 75°C; 50% water / 50% ethylenglycol
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1700 0,152<br>1600 RthJF: IGBT<br>1500 SSSSearHy 0,150 LEE | ee<br>1400<br>1300 0,148<br>1200<br>0,146<br>1100<br>a<br>1000<br>0,144<br>900<br>800<br>SERRE TTP NTT<br>0,142<br>700<br>600 ae EEA<br>0,140<br>500 Se —<br>400 meee LEAK<br>0,138<br>300 IC, Modul<br>200 F IC, Chip a tete 0,136 of<br>100<br>0 SFSeeeeeet 0,134 COLE LEE ETT<br>0 100 200 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 13 14<br>VCE [V] ∆ V/ ∆ t [dm³/min]<br> [A] [K/W]<br>IC<br>thJF<br>R<br>**----- End of picture text -----**<br>
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Final Data Sheet
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FS820R08A6P2 HybridPACK™ Drive Module
capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz
gate charge characteristic IGBT,Inverter (typical) VGE = f(QG)
VCE = 400 V, IC = 450 A, Tvj = 25°C
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100 15<br>QG<br>Cies<br>Coes 12<br>Cres<br>—— 7] PY<br>9<br>10<br>6<br>3<br>ee 0 ee<br>.<br>1 a eee<br>-3<br>-6<br>a ee ee ee ee<br>S s OP<br>0,1 -9<br>0 100 200 300 400 500 0 1 2 3 4 5<br>VCE [V] QG [µC]<br>maximum allowed collector-emitter voltage forward characteristic of Diode, Inverter (typical)<br>CES = f(Tvj), verified by characterization / design not by test = f(Tvj), verified by characterization / design not by testvj), verified by characterization / design not by test), verified by characterization / design not by test IF = f (VF)<br>CES = 1 mA for Tvj = 1 mA for Tvjvj ≤ 25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C<br>800 1600<br>—_ VCES 1500 [ Tvj = 25°C pee<br>Tvj = 150°C<br>1400 Tvj = 175°C<br>775 FA TT) Eee<br>1300<br>1200<br>750 y y LP Pry. 1100 P|pot| |ft}{| | tf| ctTt lL LA<br>1000<br>900<br>725 Y/ T TT TTT 800 f F |p| | de[| | yyft ft RALape|<br>700600 YF | | | [| | | WA Lf<br>700 ALE ELLE) Geeeeeoee<br>500 fF | | | [| | | AZ Lf<br>400<br>675 yy LP Pry. 300 P |o | || |[| | AYwy lt tf<br>200<br>100<br>650 ALLELE ELE ) » 0 |PtFRR| [L | | baibet7EY| | | [lf<br>-50 -25 0 25 50 75 100 125 150 175 200 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>Tvj [°C] VF [V]<br> [V]<br>GE<br>C [nF] V<br> [V]<br> [A]<br>CES IF<br>V<br>**----- End of picture text -----**<br>
maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test = f(Tvj), verified by characterization / design not by testvj), verified by characterization / design not by test), verified by characterization / design not by test ICES = 1 mA for Tvj = 1 mA for Tvjvj ≤ 25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C
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Final Data Sheet
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FS820R08A6P2 HybridPACK™ Drive Module
switching losses Diode, Inverter (typical) Erec = f (IF),
switching losses Diode, Inverter (typical) Erec = f (RG),
RGon = 2.4 Ω, VCE = 400 V
IF = 450 A, VCE = 400 V
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22 20<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>20 re Erec, Tvj = 175°C 18 ee Erec, Tvj = 175°C<br>18<br>16<br>He e OE<br>16<br>14<br>fii ety A A<br>14<br>Hee PA<br>12<br>12<br>Hage) PENCE<br>10<br>Pe) EN<br>10<br>8<br>8 coo, HESS<br>6<br>6 4ee eee oe<br>4<br>4<br>2 A 2 Eee<br>0 0<br>0 2 100 200 300 400 500 600 700 800 900 ee 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>transient thermal impedance Diode, Inverter thermal impedance Diode, Inverter<br>thJF = f (t), cooler design according to AN-HPD-ASSEMBLY = f (t), cooler design according to AN-HPD-ASSEMBLY RthJF = f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY<br>V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycolt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol Tf = 75°C; 50% water / 50% ethylenglycol<br>1 0,214<br>ZthJC : Diode RthJF: Diode<br>0,212<br>0,210<br>S C H<br>ceie iy AN<br>0,208<br>0,1 meemeom = APE Pe<br>0,206<br>0,204<br>0,202<br>0,01<br>Nt Se<br>0,200<br>0,198<br>i: 1 2 3 4<br>A r τ ii[K/W]:[s]: 0,0150,001 0,10,03 0,0650,25 0,021,5 0,196<br>0,001 0,194<br>0,001 TMT 0,01 ero 0,1 1 ! 10 «= 4 EE 5 6 7 8 9 10 11 12 13 14<br>t [s] ∆ V/ ∆ t [dm³/min]<br>E [mJ] E [mJ]<br> [K/W] [K/W]<br>thJC thJF<br>Z R<br>**----- End of picture text -----**<br>
transient thermal impedance Diode, Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY = f (t), cooler design according to AN-HPD-ASSEMBLY ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycolt = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol
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FS820R08A6P2 HybridPACK™ Drive Module
|NTC-Thermistor-temperature characteristic (typical)|pressure drop in cooling circuit||
|---|---|---|
|R = f (T)|∆p = f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY||
||Tf = 75°C; 50% water / 50% ethylenglycol||
|100000|120||
|Rtyp|∆p: Modul||
|10000<br>80<br>100<br>Sa~~O~~O<br>REET<br>EL) PPP|||
|R[Ω]<br>1000<br>i<br>PP ITXNEELELE)|∆p [mbar]<br>40<br>60<br>POOCYeee||
|100<br>FESS <br>ee|0<br>20<br> ee<br> eene||
|0<br>20<br>40<br>60<br>80<br>100<br>120<br>140<br>160<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>12<br>13<br>14|||
|TC[°C]|∆V/∆t [dm³/min]||
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**==> picture [146 x 64] intentionally omitted <==**
## 7 Circuit diagram
**==> picture [461 x 216] intentionally omitted <==**
**----- Start of picture text -----**<br>
P1 P2 P3<br>T1<br>C1 C3 C5<br>T<br>T2<br>G1 G3 G5<br>E1 E3 E5 T3<br>U V W T<br>C2 C4 C6<br>T4<br>G2 G4 G6 T5<br>E2 E4 E6 T<br>T6<br>N1 N2 N3<br>**----- End of picture text -----**<br>
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**==> picture [146 x 64] intentionally omitted <==**
## 8 Package outlines
**==> picture [508 x 628] intentionally omitted <==**
**----- Start of picture text -----**<br>
n5,3 c0,15~<br>B<br>1 c0,15 22,25 c0,4 D 14 c0,2 6x 16 c0,2<br>6x 6x<br>6x<br>B 9,75 c0,4 N1 Y P1 N2 P2 N3 P3 m qq01,6,5 A DB EC<br>5 c0,4<br>8x<br>0 0 X 0<br>15,5 c0,5 D<br>C2 E2G2 C4 E4G4 C6 E6G6<br>4 c0,3<br>+ 0<br>6 - 0,2<br>T1 T3 T5<br>T2 T4 T6<br>G1 E1 G3 E3 G5 E5<br>6,5 c0,5<br>C1 C3 C5<br>A<br>82 82<br>87 c0,4<br>C 1 c0,15 90,75 c0,4 U V E W C<br>3x<br>104,25 c0,4 14 c0,2<br>3x 3x<br>B<br>M-N ( 1 : 1 ) L D2 D3 D4 8x<br>9,3 c8x0,2 D1 N N1 P1 N2 P2 N3 P3 m q0,8 A L M<br>0 q1,6 B C<br>f 0,3 CZ A 8 M<br>M<br>6x common zones<br>D1-D2 dimensioned for 18,85 C2 E2 G2 C4 E4 G4 C6 E6 G6<br>D2-D3 EJOT Delta PT WN5451 30 x J L K<br>D3-D4 origin axis generated by<br>D8-D7 C2;E2;G2;C4;E4;G4;C6;E6;G6<br>D7-D6<br>D6-D5 51,85 T1 T3 T5<br>59,35 T2 T4 T6<br>67,15 G1 E1 C1 G3 E3 C3 G5 E5<br>+ 0,4 69,85 C5<br>3,94<br>- 0,5 74,1<br>refers 82<br>to lokal CZ U V W C<br>Areas R,S or T D8 D7 D6 D5<br>(19,75)<br>L ( 1,5 : 1 )<br>Drawing: D00105698_01<br>edges general toler surface m q ** A K J<br>DIN ISO 13715 167421. DIN -TG4 DIN EN ISO 1302 q ** B C<br>24x<br>2. DIN ISO C2 E2 G2<br>2768-mK ** Pin position<br>checked with pin gauge<br>All dimensions refer to module in<br>according to Application<br>delivery condition<br>Note AN-HPD_ASSEMBLY<br>0,3 0,4 0,4 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c 0,4 c<br> c c c 26,25 25 20 12,7 0 6,3 27,33 34,3 53,3 74,67 81,3 100,3 122 127 128,25<br>26 10,1 7,6 0<br>30,<br> c<br>58,<br>0,15<br> c<br>4,5 8x<br>q<br>0,15<br> c<br>4,3<br>0,2<br> c<br>3x 16<br>22 0,4 c 0,5 c 0 20 0 0,4 0,4 )(87 0,4 122<br>reference plane 7,6 6,35 c 27,33 c 74,67 c<br>1,3 48,3 95,3<br>0,2 c 23,25 12,2 0 4 8,05 27,35 34,8 51 55,05 74,65 81,8 98 102,05 125,25<br>12,8 0<br>23,25 10,25 6,2 0 21,95 23,35 27,35 36,75 40,8 68,95 70,35 74,65 83,75 87 87,8 115,95 117,35 125,25<br>**----- End of picture text -----**<br>
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FS820R08A6P2 HybridPACK™ Drive Module
## 9 Label Codes
## 9.1 Module Code
|9 Label Codes<br>9.1 Module Code||||
|---|---|---|---|
|Code Format|Data Matrix|||
|Encoding|ASCII Text|||
|Symbol Size|16x16|||
|Standard|IEC24720 and IEC16022|||
|Code Content|Content<br>Module Serial Number<br>Module Material Number<br>Production Order Number<br>Datecode (Production Year)<br>Datecode (Production Week)|Digit<br>1 - 5<br>6 - 11<br>12 - 19<br>20 - 21<br>22 - 23|Example (below)<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530|||
## 9.2 Packing Code
|9.2 Packing Code|||||
|---|---|---|---|---|
|9.2 Packing Code<br>Code Format|Code128||||
|Encoding|Code Set A||||
|Symbol Size|34 digits||||
|Standard|IEC8859-1||||
|Code Content|Content<br>Backend Construction Number<br>Production Lot Number<br>Serial Number<br>Date Code<br>Box Quantity<br>~~Sn~~|Identifier<br>X<br>1T<br>S<br>9D<br>Q<br>~~Sn~~|Digit<br>2 - 9<br>12 - 19<br>21 - 25<br>28 - 31<br>33 - 34<br>~~Sn~~|Example (below)<br>95056609<br>2X0003E0<br>754389<br>1139<br>15<br>~~Sn~~|
|Example|X950566091T2X0003E0S754389D1139Q15<br>~~Sn~~||||
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FS820R08A6P2 HybridPACK™ Drive Module
**==> picture [146 x 64] intentionally omitted <==**
## Revision History
Major changes since previous revision
|Revision History|Revision History||
|---|---|---|
|Reference|Date|Description|
|V3.0|2017-06-29|Final datasheet|
|V3.1|2019-06-18|Adjustment of package outlines|
|V3.2|2019-07-25|Adjustment of package outlines|
|V3.3|2019-10-09|Adjustment of package outlines. Correction of typing errors.|
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**==> picture [146 x 64] intentionally omitted <==**
## Terms & Conditions of usage
Edition 2018-08-01
Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com)
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing.
Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
## Trademarks
## Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
## Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last update 2011-11-11
V3.3, 2019-10-09
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15
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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