![FS75R17W2E4PB11BPSA1 — IGBT Module, Six Pack [Full Bridge], 45 A, 1.95 V, 20 mW, 150 °C, Module](/media/4/2/2/76CBFB5BD0E70224.webp)
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FS75R17W2E4PB11BPSA1
IGBT Module, Six Pack [Full Bridge], 45 A, 1.95 V, 20 mW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 20mW
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 45A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 46.03 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FS75R17W2E4P_B11** **EasyPACK[™] module** ## **EasyPACK[™] module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode and PressFIT / NTC / TIM** ## **Features** - Electrical features - VCES = 1700 V - IC nom = 75 A / ICRM = 150 A - Low switching losses - Low V CE,sat - Mechanical features - Al2O3 substrate with low thermal resistance - PressFIT contact technology - Rugged mounting due to integrated mounting clamps - Compact design - Pre-applied thermal interface material ## **Potential applications** - UPS systems - Air conditioning - Motor drives - Servo drives ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2022-06-27 **FS75R17W2E4P_B11 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**7**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**8**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| Datasheet Revision 1.00 2022-06-27 2 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|4.0|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.5|mm| |Creepage distance|_d_Creep|terminal to terminal|6.3|mm| |Clearance|_d_Clear|terminal to heatsink|10.0|mm| |Clearance|_d_Clear|terminal to terminal|5.0|mm| |Comparative tracking<br>index|_CTI_||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||40||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch||4||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Maximum baseplate<br>operation temperature|_T_BPmax||||125|°C| |Mounting force per clamp|_F_||40||80|N| |Weight|_G_|||42||g| _Note: The current under continuous operation is limited to 25 A_ rms _per connector pin. Storage and shipment of modules with TIM => see AN2012-07._ ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1700|V| |Implemented collector<br>current|_I_CN|||75|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_H= 65 °C|45|A| **(table continues...)** Datasheet Revision 1.00 2022-06-27 3 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**| |---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op|150|A| |Gate-emitter peak voltage|_V_GES||±20|V| |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 75 A,_V_GE= 15 V|_T_vj= 25 °C||1.95|2.30|V| ||||_T_vj= 125 °C||2.35||| ||||_T_vj= 150 °C||2.45||| |Gate threshold voltage|_V_GEth|_I_C= 3 mA, VCE= VGE,_T_vj= 25 °C||5.35|5.80|6.25|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 900 V|||0.9||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||8.5||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||6.8||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.22||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1700 V,_V_GE= 0 V|_T_vj= 25 °C|||35|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 1 Ω|_T_vj= 25 °C||0.170||µs| ||||_T_vj= 125 °C||0.188||| ||||_T_vj= 150 °C||0.193||| |Rise time (inductive load)|_t_r|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 1 Ω|_T_vj= 25 °C||0.031||µs| ||||_T_vj= 125 °C||0.035||| ||||_T_vj= 150 °C||0.036||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 1 Ω|_T_vj= 25 °C||0.405||µs| ||||_T_vj= 125 °C||0.532||| ||||_T_vj= 150 °C||0.568||| |Fall time (inductive load)|_t_f|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 1 Ω|_T_vj= 25 °C||0.288||µs| ||||_T_vj= 125 °C||0.526||| ||||_T_vj= 150 °C||0.598||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 1 Ω, di/dt = 1800<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||17.8||mJ| ||||_T_vj= 125 °C||24.8||| ||||_T_vj= 150 °C||27.3||| ## **(table continues...)** Datasheet Revision 1.00 2022-06-27 4 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 1 Ω, dv/dt = 3050<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||15.7||mJ| ||||_T_vj= 125 °C||25.4||| ||||_T_vj= 150 °C||28.2||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 1000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj=150 °C||350||A| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT, Valid with IFX pre-applied Thermal<br>Interface Material||||0.632|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1700|V| |Continuous DC forward<br>current|_I_F|||50|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|425|A²s| ||||_T_vj= 150 °C|390|| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,_V_GE= 0 V|_T_vj= 25 °C||1.80|2.20|V| ||||_T_vj= 125 °C||1.90||| ||||_T_vj= 150 °C||1.95||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1600 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||145||A| ||||_T_vj= 125 °C||152||| ||||_T_vj= 150 °C||154||| |Recovered charge|_Q_r|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1600 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||12.6||µC| ||||_T_vj= 125 °C||19||| ||||_T_vj= 150 °C||21.6||| ## **(table continues...)** Datasheet Revision 1.00 2022-06-27 5 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 NTC-Thermistor** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Reverse recovery energy|_E_rec|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1600 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||9.1||mJ| ||||_T_vj= 125 °C||15.8||| ||||_T_vj= 150 °C||17.9||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode, Valid with IFX pre-applied<br>Thermal Interface Material||||1.16|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 NTC-Thermistor** |**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet Revision 1.00 2022-06-27 6 **FS75R17W2E4P_B11 EasyPACK[™] module** **5 Characteristics diagrams** **5 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 150 150<br>135 135<br>120 120<br>105 105<br>90 90<br>75 75<br>60 60<br>45 45<br>30 30<br>15 15<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 1 Ω, RGon = 1 Ω, VCC = 900 V, VGE = ± 15 V<br>150 80<br>135<br>70<br>120<br>60<br>105<br>50<br>90<br>75 40<br>60<br>30<br>45<br>20<br>30<br>10<br>15<br>0 0<br>5 6 7 8 9 10 11 12 13 0 15 30 45 60 75 90 105 120 135 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-06-27 7 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** **Switching losses (typical), IGBT, Inverter Transient thermal impedance , IGBT, Inverter** E = f(RG) Zth = f(t) IC = 75 A, VCC = 900 V, VGE = ± 15 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 40 1<br>35<br>30<br>25<br>20 0.1<br>15<br>10<br>5<br>0 0.01<br>0 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1 10<br>Reverse bias safe operating area (RBSOA), IGBT, Forward characteristic (typical), Diode, Inverter<br>Inverter IF = f(VF)<br>IC = f(VCE)<br>RGoff = 1 Ω, VGE = ±15 V, Tvj = 150 °C<br>180 100<br>160<br>140<br>75<br>120<br>100<br>50<br>80<br>60<br>25<br>40<br>20<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-06-27 8 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Switching losses (typical), Diode, Inverter** Erec = f(IF) VCE = 900 V, RG = 1 Ω ## **Switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 900 V, IF = 50 A **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 25 20<br>20 18<br>15 16<br>10 14<br>5 12<br>0 10<br>0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 10<br>Transient thermal impedance, Diode, Inverter Temperature characteristic (typical), NTC-Thermistor<br>Zth = f(t) R = f(TNTC)<br>100000<br>1<br>10000<br>1000<br>0.1<br>100<br>0.001 0.01 0.1 1 10 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-06-27 9 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Circuit diagram** **6 Circuit diagram** **==> picture [251 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2022-06-27 10 **FS75R17W2E4P_B11 EasyPACK[™] module** **7 Package outlines** **7 Package outlines** **==> picture [105 x 47] intentionally omitted <==** **==> picture [108 x 35] intentionally omitted <==** **==> picture [180 x 185] intentionally omitted <==** **==> picture [84 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [143 x 56] intentionally omitted <==** **==> picture [192 x 222] intentionally omitted <==** **==> picture [100 x 72] intentionally omitted <==** ## **Figure 2** Datasheet Revision 1.00 2022-06-27 11 **FS75R17W2E4P_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Module label code** ## **8 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2022-06-27 12 **FS75R17W2E4P_B11 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-09-21|Initial version| |0.20|2022-04-12|Preliminary datasheet| |1.00|2022-06-27|Final datasheet| Datasheet Revision 1.00 2022-06-27 13 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-06-27 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABB291-003** Infineon Technologies in customer’s applications. ## 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For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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