![FS75R17KE3BOSA1 — IGBT Module, Six Pack [Full Bridge], 130 A, 2 V, 465 W, 125 °C, Module](/media/2/2/6/7AC90B54D1E70622.webp)
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FS75R17KE3BOSA1
IGBT Module, Six Pack [Full Bridge], 130 A, 2 V, 465 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 35Pins
- Product Range: -
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 465W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: Six N Channel
- DC Collector Current: 130A
- Power Dissipation Pd: 465W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 130A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 2V
- Collector Emitter Saturation Voltage Vce(on): 2V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 76.67 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R17KE3 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** **初步数据 Preliminary�Data** |技术信息/TechnicalInformation<br>FS75R17KE3<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:MW<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>75<br>130<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>465<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,40<br>2,45<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,90<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>8,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,22<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 6,8Ω<br>td on<br>0,37<br>0,40<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 75 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 6,8Ω<br>tr<br>0,04<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>td off<br>0,65<br>0,80<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 75 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>tf<br>0,18<br>0,30<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V<br>RGon= 6,8Ω<br>Eon<br>16,5<br>24,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V<br>RGoff= 6,8Ω<br>Eoff<br>16,0<br>23,5<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>300<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,27<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:MW|dateofpublication:2013-10-03| |---|---| |approvedby:WR|revision:2.0| 1 技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R17KE3 **==> picture [86 x 38] intentionally omitted <==** **初步数据 Preliminary�Data** ## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|1050|||A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,90|2,20|V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||115<br>125||A<br>A| |恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||22,0<br>36,5||µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||11,5<br>20,5||mJ<br>mJ| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,48|K/W| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **负温度系数热敏电阻�/�NTC-Thermistor** ## **特征值�/�Characteristic�Values** |**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**特征值/CharacteristicValues**|||min.<br>typ.||max.|| |额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| |根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.||||||| prepared�by:�MW date�of�publication:�2013-10-03 approved�by:�WR revision:�2.0 2 IGBT-模块 IGBT-modules ## FS75R17KE3 ## **初步数据** |#tk | Module|||||| |---|---|---|---|---|---| |绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||3,4<br>Cu<br>AI203|kV| |爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0<br>10,0|mm| |电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>7,5<br>> 225<br>typ.<br>max.<br>~~ee~~|mm| |外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W| |杂散电感,模块||LsCE||21|nH| |模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm| |重量<br>Weight||G||300|g| 3 IGBT-模块 IGBT-modules ## FS75R17KE3 ## **初步数据** **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC CE) IC CE)<br>VGE “as Tvj =125°C<br>150 150<br>140 Tvj = 25°C 140 VGE = 20V<br>Tvj = 125°C VGE = 15V<br>130 f=efAe 130 [ee VGE = 12V iEl ee ae<br>VGE = 10V<br>120 ee ee 120 VGE = 9V PttA<br>110 ee 110 VGE = 8V tf<br>100 Pp | | | hE AT eee 100 ne ePT Adeeee Tey<br>90 Pot | | A 90 Pot | | A<br>80 ee ee 80 Pot | | ee<br>70 70<br>re ee po | tT er<br>60 Pot te 60 po |<br>50 Pot tT vy 50 en Ae<br>40 ee eee 40 Pot | ees |<br>30 Pr eee 30 Pot | eae |<br>20 P| tA | 20 | | tv tT<br>10 10<br>Fo | |At | ft | | i)<br>0 | ote | TT | 0 | pA}Cee| Tt<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eStE IGBT, EBS (FRA) FFI IGBT, WBE ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC GE) Eon C off C)<br>VCE GOV VGE TMBVR Gon 568 Ω .R Goff =68 Ω ,V CE =900V<br>150 60<br>140 Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 55 Eoff, Tvj = 125°C<br>Se<br>130<br>Eo Ty 50 aoe<br>120 ee e ee a<br>ee eee2 45 4 Z<br>110<br>100 40<br>90 HERES| 35 EEREAo)<br>80 ee<br>30<br>70 Pot ee eeee<br>25 J<br>60 Pot ee<br>50 20<br>fi<br>40 FEARS ESE<br>15<br>30<br>re ae TTA<br>10<br>20 P| TT EO<br>5<br>10 P| [EA] | hy | ae<br>0 0<br>Poe r E<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 IGBT-模块 IGBT-modules ## FS75R17KE3 ## **初步数据** **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =900V<br>80 _____..] 1 (ee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>TT |<br>7060 Pf ff ff yy Pi a e r CCITa lTl|<br>LAN E<br>50 Pf |ff)| re| | ee LUMilerninmmm to EN<br>40 ef Te] 0,1 UM A<br>Tr | TT 7 TTTTT<br>| Tta | lo Aa |TTT<br>3020 Pfet7 t t |)a | |<br>10 e e e ee ee PLLeGVAM E TE i: ri[K/W]: 1 0,027 ETE 2 0,081 3 0,108 EE 4 0,054 T<br>τ i[s]: 0,01 0,04 0,06 0,3<br>0 0,01<br>0 5 10 15 20 25 30 35 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RwRELIEK IGBT, #2 ( RBSOA ) Fa mESstt Re ee ( BB)<br>I reverse C CE bias ) safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =6.8 Ω ,T vj =125°C WV<br>160 150<br>IC, Modul 140 Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>f+ | fF<br>140 [ee 130 [he en<br>120<br>120 F e tter E+ ae<br>110<br>100<br>Fide a a ee ee ee<br>100 ei) 6 -eReeePee<br>90 rr<br>80<br>80 PP PE TP Py ya eeee<br>a es<br>70<br>60<br>60 PP PP TP pp Rp (eee [ye] ee ee<br>50 ee ee<br>re ae<br>40<br>40<br>30<br>20 PTTL) 20 Eeea #Ae<br>10<br>0 ee 0 eea ee eeea ee e e<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 IGBT-模块 IGBT-modules ## FS75R17KE3 ## **初步数据** **==> picture [485 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon 268 Ω ,V CE =900V IF =75AV CE =900V<br>40 22<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>21<br>35 Sv == a<br>20<br>PE P) Ge e se<br>30 19<br>18<br>25 CCC a N<br>17<br>PEP ee) Ee PeeeSe SEE<br>20 a 16 Pt tt Er<br>15<br>COR) PEER<br>15<br>14<br>CACC) eee<br>10 Lo 13 Pt Et EE<br>12<br>CeCe) Pee<br>5<br>11<br>0 10 Pit | tt tt tt<br>PEEP PPT ) EERE EEE<br>0 20 40 60 80 100 120 140 0 4 8 12 16 20 24 28 32 36 40<br>IF [A] RG [ Ω ]<br>EAS RB ees<br>Z ren thJC impedance Diode, Inverter<br>1<br>ZthJC : Diode<br>To<br>a EE<br>o n<br>a ess en<br>PL TI TA ETI ET<br>EAEAE EET<br>ATT<br>0,1 IIA ETI EU<br>ntoon on<br>aen lll<br>PMEa a E TE ETE ET|| |<br>i: 1 2 3 4<br>ri[K/W]: 0,048 0,144 0,192 0,096<br>τ i[s]: 0,01 0,04 0,06 0,3<br>n el<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R17KE3 ## **接线图�/�circuit_diagram_headline** **==> picture [86 x 38] intentionally omitted <==** ## **初步数据 Preliminary�Data** **==> picture [6 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **封装尺寸�/�package�outlines** **==> picture [125 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [51 x 49] intentionally omitted <==** **==> picture [65 x 61] intentionally omitted <==** prepared�by:�MW approved�by:�WR date�of�publication:�2013-10-03 revision:�2.0 7 IGBT-模块 IGBT-modules ## FS75R17KE3 ## **初步数据** ## **使用条件和条款** ## 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 保留产品规格书的修改权 8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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