![FS75R12KT4B15BPSA1 — IGBT Module, Six Pack [Full Bridge], 75 A, 1.85 V, 385 W, 150 °C, Module](/media/7/2/8/7ECC1363D2E60827.webp)
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FS75R12KT4B15BPSA1
IGBT Module, Six Pack [Full Bridge], 75 A, 1.85 V, 385 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 385W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 75A
- Power Dissipation Pd: 385W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 53.06 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS75R12KT4_B15
VCES = 1200V IC nom = 75A / ICRM = 150A
- Hilfsumrichter
- Motorantriebe
- Servoumrichter
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- CEsat
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- T
- VCEsat
- CEsat
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- T
- VCEsat
- Al2O3 Substrat mit kleinem thermischen Widerstand
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- Kupferbodenplatte
- Standardgehäuse
- Al2O3
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1
IGBT-Module IGBT-modules FS75R12KT4_B15
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,Wechselrichter�/�IGBT,Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS75R12KT4_B15<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:NK<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:3.0<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>75<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>385<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 2,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,57<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>10<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,16<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2800 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>4,70<br>7,20<br>8,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 3800 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>3,90<br>6,10<br>6,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>270<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,39<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,195<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
IGBT-Module IGBT-modules FS75R12KT4_B15
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|960<br>|A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>120<br>125||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||8,60<br>14,0<br>16,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,60<br>4,50<br>5,50||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,62|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,31||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�NK date�of�publication:�2013-11-04 approved�by:�RS revision:�3.0
3
IGBT-Module IGBT-modules
## FS75R12KT4_B15
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|19<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|
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## IGBT-Module IGBT-modules Technische Information FS75R12KT4_B15 / Technical Information
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 a 7 150 es | [ov<br>Tvj = 25°C VGE = 19V<br>135 (ene Tvj = 125°C | a 135 VGE = 17V L i Ae/ Le a<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>120 re | 120 VGE = 11V fanaa<br>VGE = 9V<br>Pi t<br>105 105<br>ppeeye: EE J e e—<br>90 fe 90 —<br>75 de 75<br>ppdaw Lay eT<br>60 60<br>pti veea , Pt ELeei;vA 4<br>vA<br>45 ieefaq 45 oo7wl/ 7 ‘<br>30 30<br>15 15<br>PA LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+H15V,R Gon =22 Ω ,R Goff =2.2 Ω ,V CE =600V<br>150<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C 20 Eoff, Tvj = 125°C<br>r Tvj = 150°C r e Eon, Tvj = 150°C a<br>18 Eoff, Tvj = 150°C<br>120 ea Ee f ro<br>16<br>i e ee ee e<br>105<br>14<br>e eeee e e e<br>90<br>12<br>PPT if Pp} Ey ee<br>75<br>TP 4<br>é 10 “| i<br>60<br>BRR eu<br>8<br>PE A o<br>45<br>6<br>i pee<br>30<br>4<br>/'ee Je<br>a ee 2<br>15 2<br>ee ee<br>poe<br>0 0<br>ee | | | | |<br>5 6 7 8 9 10 11 12 13 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
## IGBT-Module IGBT-modules
## FS75R12KT4_B15
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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 a 1 rr<br>Eon, Tvj = 125°C ZthJC : IGBT<br>18 = Eoff, Tvj = 125°C r it tf fo |A eee e ee ooe<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16 elS o ea | a a<br>14 Pt Ty ft) Lapeer]= a | |) | |<br>— TI E<br>12<br>Pt EVAIIE ETI ET<br>10 0,1<br>pt tTeteteTT TT a /A0il000<br>86 PtyPi]4 ft ft| ffTE |}dedd pPPt7 T TTA 00TT<br>4 PT | | | td dd dd |a tAEE| ||<br>i: 1 2 3 4<br>2 CCOCETeeloA e e r τ ii[K/W]: [s]: 0,0234 0,01 0,1287 0,02 e 0,1248 0,05 0,1131 0,1<br>PEE Co<br>0 0,01<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE Aen V,R Goff =2.2 Ω ,T vj =150°C<br>180 150<br>IC, Modul Tvj = 25°C<br>165 IC, Chip 135 Tvj = 125°C<br>Tvj = 150°C<br>Et] PW<br>150<br>120<br>135<br>105<br>120<br>90<br>105<br>90 75<br>75<br>60<br>60<br>45<br>45<br>30<br>30 ee ee eee A/|<br>15<br>15 Pot | | | lt Saeee sane/<br>4<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FS75R12KT4_B15
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Erec =f(I F) Erec =f(R G)<br>RGon 39 Ω ,V CE =600V IF 76K CE = 600 V<br>8 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>7 7<br>a ee|<br>Ht BERERREEEEE<br>6 6<br>5 lt 5<br>er bere yp EBLE EEL<br>4 Lor)“A 4 LAA| eR><br>Lee EEE LEE<br>3 3<br>2 AEEVA 2 Pee<br>ET ET EP LE EEE [EEL]<br>1 1<br>PCO)ALLELE TEL) EEEEeeETT<br>0 0<br>0 15 30 45 60 75 90 105 120 135 150 0 2 4 6 8 10 12 14 16 18 20 22<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>[ ZthJC : Diode ee [ Rtyp =<br>a a [J p<br>| es s e<br>| ll es ee<br>PIE AT TE ry.<br>EME ALUM AM 10000 XE<br>! a<br>0,1<br>SSS ON<br>Pta ALT aN\ eee<br>a ll 1000 ————_————<br>a | || es ee ec<br>i: 1 2 3 4<br>ri[K/W]: 0,0372 0,2046 0,1984 0,1798<br>Co τ i[s]: 0,01 0,02 0,05 0,1 pot NT<br>0,01 Toon 100 Pt [ete]<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules
## FS75R12KT4_B15
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## **Schaltplan�/�circuit_diagram_headline**
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J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
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In fin e o n<br>**----- End of picture text -----**<br>
prepared�by:�NK date�of�publication:�2013-11-04 approved�by:�RS revision:�3.0
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS75R12KT4_B15
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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