![FS75R12KT3BOSA1 — IGBT Module, Six Pack [Full Bridge], 105 A, 1.7 V, 355 W, 125 °C, Module](/media/E/1/C/82CD1F47D3E80C1E.webp)
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FS75R12KT3BOSA1
IGBT Module, Six Pack [Full Bridge], 105 A, 1.7 V, 355 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoPACK 2
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 355W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 105A
- Power Dissipation Pd: 355W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 105A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 78.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FS75R12KT3 **==> picture [86 x 38] intentionally omitted <==** EconoPACK™2�Modul�mit�schnellem�Trench/Feldstop�IGBT3�und�High�Efficiency�Diode� EconoPACK™2�with�fast�trench/fieldstop�IGBT3�and�Emitter�Controlled�High�Efficiency�diode� |TechnischeInformation/TechnicalInformation<br>FS75R12KT3<br>IGBT-Module<br>IGBT-modules|| |---|---| |EconoPACK™2ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode<br>EconoPACK™2withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode<br>preparedby:MK<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>75<br>105<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>355<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,70<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>10<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>5,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,20<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 4,7Ω<br>td on<br>0,26<br>0,29<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 4,7Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGon= 4,7Ω<br>Eon<br>7,00<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>Eoff<br>8,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>300<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,35<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,19<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| 1 > IGBT-ModuleIGBT-modules FS75R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|1200<br>|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2200 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||90,0<br>96,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 2200 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||7,40<br>13,5||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2200 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||3,00<br>5,50||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,58|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,32||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 2 IGBT-Module IGBT-modules ## FS75R12KT3 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||AI203||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|19<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||2,50||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Gewicht<br>Weight||G||180||g| 3 ## IGBT-Module IGBT-modules Technische Information / FS75R12KT3 Technical Information **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>150 a | 7 150 es | V } :<br>Tvj = 25°C VGE = 19V<br>135 Tvj = 125°C 135 VGE = 17V<br>(ee ee | VGE = 15V LekAA TT<br>VGE = 13V<br>120 Se 120 | VGE = 11V ie<br>VGE = 9V<br>ee [__.d e a 2 / | |<br>105 105<br>/, /, : Yo<br>jr / .<br>90 90<br>eee: Sane<br>75 75<br>J<br>/<br>60 60<br>45 /[‘ 45 i i]fi' / 7<br>ee<br>30 30<br>PT A<br>15 15<br>YEP Py) Lee<br>0 0<br>PUA] CLA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =47 Ω ,R Goff =47 Ω ,V CE =600V<br>150 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C Eoff, Tvj = 125°C<br>14<br>=| |<br>120<br>12<br>105<br>10<br>90<br>HSS PL ey<br>75 8<br>a a Y<br>60<br>6<br>TALE “a<br>45<br>4<br>30<br>ee 2<br>15<br>0 0<br>ee eeeee<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 ## IGBT-Module IGBT-modules ## FS75R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 a 1 rr<br>| ee eee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>1816 ry E ] off, Tvj = 125°C ].| | | Ltms | | a a | |<br>14 P| ff ff bey]ZO | aPLT TTI eee t i<br>< UIalll E<br>Va TB TY TUT<br>12<br>10 0,1<br>pi te Wal<br>8 ZWA oeeV<br>6 Pr t fF fF ff ff] ES7<br>PEPE P TAU PTTT<br>4<br>A S Hr<br>i: 1 2 3 4<br>2 r τ ii[K/W]: [s]: 0,03949 0,002345 0,158 0,0282 0,08884 0,1128 0,06139 0,282<br>Le )<br>0 0,01<br>0 5 10 15 20 25 30 35 40 45 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =4.7 Ω ,T vj =125°C<br>200 150<br>IC, Modul Tvj = 25°C<br>a IC, Chip 135 a Tvj = 125°C L<br>120<br>e - P y | FjT TT } TT ge<br>150<br>105<br>Seeeeeeee<br>90<br>eee<br>SESSS000/<br>100 75<br>EEREEREP eee008<br>60<br>Coo eee<br>45<br>50<br>30<br>BEene7A ene<br>15<br>EEREAwVAREEEE<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## FS75R12KT3 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon J h7 Ω ,V CE =600V IF 76K CE = 600 V<br>8 | 8 LS<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>7 —ee —=_| 7 eee _~_T_ES |<br>Se e<br>6 6<br>5 5 aN<br>P| [tet] Z| antT eeeENT<br>4 VA 4 oN<br>SARE eee eee<br>PET<br>3 3<br>2 2<br>Pe7 tt | ty LEPEEPPe<br>1 1<br>0 0<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [238 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC =f (t)<br>1<br>Le<br>ZthJC : Diode<br>H— ccc<br>a a |Foo<br>PT ee<br>a<br>A a<br>EMECEEE TT<br>OE<br>0,1<br>SES TT<br>| | VETTT)<br>P TATTT<br>PV TTT ETTTTT<br>| |<br>ZAIN TTTE<br>PPP rvN| i: CEE 1 2 ETIE 3 ET 4 I<br>ri[K/W]: 0,05906 0,3815 0,1099 0,0348<br>τ i[s]: 0,003333 0,03429 0,1294 0,7662<br>( loll<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FS75R12KT3 ## **Schaltplan�/�circuit_diagram_headline** **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **==> picture [233 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen�/�package�outlines** **==> picture [256 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 7 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FS75R12KT3 ## **Nutzungsbedingungen** ## application. 8
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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