![FS75R12KE3GBOSA1 — IGBT Module, Six Pack [Full Bridge], 100 A, 1.7 V, 355 W, 125 °C, Module](/media/F/1/A/6EE5194ACEEE0A1F.webp)
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FS75R12KE3GBOSA1
IGBT Module, Six Pack [Full Bridge], 100 A, 1.7 V, 355 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 355W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Power Dissipation Pd: 355W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 73.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules FS75R12KE3G ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FS75R12KE3G<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:MM<br>approvedby:RS<br>dateofpublication:2013-10-02<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>75<br>100<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>355<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,70<br>2,00<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,70<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>10<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>5,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,20<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 4,7Ω<br>td on<br>0,26<br>0,29<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 4,7Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGon= 4,7Ω<br>Eon<br>7,00<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>Eoff<br>9,50<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>300<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,35<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:MM|dateofpublication:2013-10-02| |---|---| |approvedby:RS|revision:3.1| 1 ## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FS75R12KE3G **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|1200<br>|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||90,0<br>100||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 2000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||7,00<br>14,0||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||3,00<br>6,00||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,58|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�MM date�of�publication:�2013-10-02 approved�by:�RS revision:�3.1 2 IGBT-Module IGBT-modules ## FS75R12KE3G |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Innere Isolation<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br>Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~||2,5<br>AI203||kV| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W| |Modulstreuinduktivität||LsCE||21||nH| |Modulleitungswiderstand, Anschlusse -||||||| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee eee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~eee~~||||°C<br>Nm| |Gewicht<br>Weight||G||300||g| 3 IGBT-Module IGBT-modules ## FS75R12KE3G **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>150 a | 7 150 es | 0<br>Tvj = 25°C VGE = 19V<br>135 F Tvj = 125°C J fy .| 135 VVGEGE = 17V = 15V Lae |<br>VGE = 13V<br>120 120 | VGE = 11V ey eT<br>ee [ee] 7 az _"<br>VGE = 9V<br>e e<br>105 105<br>/ ee e e<br>|PAA E e<br>90 90<br>Pt 7 a fs<br>/ 1 fy J<br>75 75<br>60 en ee eee) 60 A e<br>45 ee ee 45 2WA | |<br>ee<br>30 30<br>15 15<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =47 Ω ,R Goff =47 Ω ,V CE =600V<br>150 20<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 FELs) Tvj = 125°C 18 IR Eoff, Tvj = 125°C<br>120 16<br>105 e e 14 A<br>90 Fe 2 12 Pe<br>75 10<br>ee) ee eeeee<br>60 8<br>45 6<br>30 ee ee 4 ee<br>Si ><br>15 2<br>poy<br>0 0<br>| | | | | hE<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 IGBT-Module IGBT-modules ## FS75R12KE3G **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 a 1 rr<br>Eon, Tvj = 125°C ZthJC : IGBT<br>18 ( Eoff, Tvj = 125°C | ms H—= Soo PT TT fT TTT<br>16 ry] ].| | | Lt | ||<br>14 Pf | ff} feva | a St ee ee<br>12 soe) E e<br>10864 is PrtPf Z fF ffanff dd 0,1 |ESAFoo7TATTETETE ETT<br>i: 1 2 3 4<br>2 on of fof pt ff PAL A r τ ii[K/W]: [s]: EET 0,00663 0,0000119 0,0202 0,002364 PEI 0,17619 0,02601 0,14698 0,06499 ET T<br>aa<br>0 PE [TTT] re 0,01 488) tA<br>0 5 10 15 20 25 30 35 40 45 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =4.7 Ω ,T vj =125°C<br>175 150<br>IC, Modul Tvj = 25°C<br>IC, Chip 135 Tvj = 125°C<br>150 ee ee ee<br>120<br>125<br>105<br>BEREREEEP<br>90<br>100<br>75<br>75 ee ee ee Aa<br>| BERR ee<br>60<br>ee 45 eee<br>50<br>30<br>25<br>Saeeee BERES7EREREE<br>15<br>ptt Ty EEREAwVAREEEE<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## FS75R12KE3G **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon J h7 Ω ,V CE =600V IF 76K CE = 600 V<br>10 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 a 7 ee|<br>8<br>pot ft | T<br>6<br>7<br>TT rye} 5 ENELT<br>6<br>5 4<br>4 A pe<br>3<br>3<br>2<br>2<br>1<br>1<br>0 0<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [238 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC =f (t)<br>1<br>Le<br>ZthJC : Diode<br>H— Foo ccc<br>|<br>Pot Te<br>| | el<br>PTIAoE EIT TT<br>TIMIEEE TT<br>0,1<br>ey ee<br>| TATU TT [TT)]<br>a |<br>PATTTT<br>VA ET |<br>aPP P i: EEE 1 2 3 4 ET| I<br>ri[K/W]: 0,01097 0,03294 0,29244 0,24365<br>τ i[s]: 0,0000119 0,002364 0,02601 0,06499<br>homo<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FS75R12KE3G **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [6 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen�/�package�outlines** **==> picture [125 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [51 x 49] intentionally omitted <==** **==> picture [65 x 61] intentionally omitted <==** prepared�by:�MM date�of�publication:�2013-10-02 approved�by:�RS revision:�3.1 7 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FS75R12KE3G ## **Nutzungsbedingungen** application. 8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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