![FS660R08A6P2FBBPSA1 — IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 1.053 kW, 175 °C, Module](/media/1/2/6/86BC0A51D4E30621.webp)
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FS660R08A6P2FBBPSA1
IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 1.053 kW, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: HybridPACK
- IGBT Technology: IGBT EDT2 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1.053kW
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 450A
- Power Dissipation Pd: 1.053kW
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 450A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Voltage V(br)ceo: 750V
- Collector Emitter Saturation Voltage: 1.1V
- Collector Emitter Saturation Voltage Vce(on): 1.1V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 300.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# FS660R08A6P2FB HybridPACK™ **FS660R08A6P2FB** Drive Module **==> picture [2 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> T<br>T<br>T<br>**----- End of picture text -----**<br> **==> picture [58 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 750 V<br>IC = 660 A<br>**----- End of picture text -----**<br> ## Typical Applications - •Automotive Applications - •Hybrid Electrical Vehicles (H)EV - •Motor Drives - •Commercial Agriculture Vehicles ## Electrical Features - •Blocking voltage 750V - •Low VCEsat - •Low Switching Losses - •Low Qg and Crss - •Low Inductive Design - •Tvj op = 150°C • Short-time extended Operation Temperature vj op ## Mechanical Features - •4.2kV DC 1sec Insulation - •High Creepage and Clearance Distances - •Compact design - •High Power Density - •Copper Base Plate - •Guiding elements for PCB and cooler assembly - •Integrated NTC temperature sensor - •PressFIT Contact Technology - •RoHS compliant ## Description The HybridPACK[TM] Drive is a very compact six-pack module optimized for hybrid and electric vehicles. The product FS660R08A6P2FB comes with a flat baseplate and is a 750V/660A module derivate within the HybridPACK Drive family. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new The HybridPACK[TM] Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The two products in the The HybridPACK[TM] Drive family with flat baseplate in the FS660R08A6P2FB and PinFin baseplate in the FS820R08A6P2B allow a very cost effective scaling for different inverter power levels at a minimum inverter design effort. - •UL 94 V0 module frame Product Name Ordering Code FS660R08A6P2FB SP001632426 Final Data Sheet 2 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## 2 IGBT,Inverter ## 2.1 Maximum Rated Values |2 IGBT,Inverter<br>2.1 Maximum Rated Values||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Collector-emitter voltage|Tvj= 25°C|VCES||750||V| |Implemented collector current||ICN||660||A| |Continuous DC collector current|TC= 80°C, Tvj max= 175°C|IC nom||4501)||A| |Repetitive peak collector current|tP= 1 ms|ICRM||1320||A| |Total power dissipation|TC= 75°C, Tvj max= 175°C|Ptot||10531)||W| |Gate-emitter peak voltage||VGES||+/-20||V| |2.2 Characteristic Values|||min.|typ.|max.|| |Collector-emitter saturation voltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 660 A, VGE= 15 V Tvj= 25°C<br>IC= 660 A, VGE= 15 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.10<br>1.15<br>1.15<br>1.25<br>1.35|1.35|V| |Gate threshold voltage|IC= 9.60 mA, VCE= VGE<br>Tvj= 175°C<br>Tvj= 25°C|VGEth|4.90|5.80<br>4,10|6.50|V| |Gate charge|VGE= -8 V ... 15 V, VCE= 400V|QG||4.40||µC| |Internal gate resistor|Tvj= 25°C|RGint||0.7||Ω| |Input capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cies||80.0||nF| |Output capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Coes||1.00||nF| |Reverse transfer capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.30||nF| |Collector-emitter cut-off current|VCE= 750 V, VGE= 0 V<br>VCE= 750 V, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C|ICES||5|1.0|mA| |Gate-emitter leakage current|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA| |Turn-on delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.28<br>0.29<br>0.30||µs| |Rise time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.07<br>0.08<br>0.08||µs| |Turn-off delay time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.94<br>1.05<br>1.05||µs| |Fall time, inductive load|IC= 450 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.04<br>0.05<br>0.06||µs| |Turn-on energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>di/dt (Tvj25°C) = 5500 A/µs<br>di/dt (Tvj150°C) = 5000 A/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||13.5<br>17.5<br>18.0||mJ| |Turn-off energy loss per pulse|IC= 450 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>dv/dt (Tvj25°C) = 3100 V/µs<br>dv/dt (Tvj150°C) = 2500 V/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||23.5<br>29.0<br>30.0||mJ| |SC data|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 175°C<br>tP ≤6 µs,<br>tP ≤3 µs,|ISC||4800<br>3900||A| |Thermal resistance, junction to case|per IGBT|RthJC||0.080|0.095|K/W| |Thermal resistance, case to heatsink|per IGBT<br>λPaste= 1 W/(m·K) /λgrease= 1 W/(m·K)|RthCH||0.0502)||K/W| |Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| - 1) Verified by characterization / design not by test. - 2) cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W - 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. V3.0, 2019-05-20 Final Data Sheet 3 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## 3 Diode, Inverter ## 3.1 Maximum Rated Values |3 Diode, Inverter<br>3.1 Maximum Rated Values||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Repetitive peak reverse voltage|Tvj= 25°C|VRRM||750||V| |Implemented forward current||IFN||660||A| |Continuous DC forward current||IF||4501)||A| |Repetitive peak forward current|tP= 1 ms|IFRM||1320||A| |I²t - value|VR= 0 V, tP= 10 ms, Tvj= 150°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t||19000<br>16000||A²s<br>A²s| |3.2 Characteristic Values|||min.|typ.|max.|| |Forward voltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 660 A, VGE= 0 V Tvj= 25°C<br>IF= 660 A, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.45<br>1.30<br>1.25<br>1.60<br>1.45|1.65|V| |Peak reverse recovery current|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||250<br>350<br>370||A| |Recovered charge|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||20.0<br>40.0<br>45.0||µC| |Reverse recovery energy|IF= 450 A, - diF/dt = 5000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||7.00<br>13.0<br>15.0||mJ| |Thermal resistance, junction to case|per diode|RthJC||0.125|0.150|K/W| |Thermal resistance, case to heatsink|per diode<br>λPaste= 1 W/(m·K) /λgrease= 1 W/(m·K)|RthCH||0.0502)||K/W| |Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| ## - 4 NTC Thermistor |||||||| |---|---|---|---|---|---|---| |4 NTC-Thermistor|||min.|typ.|max.|| |Parameter|Conditions|Symbol||Value||Unit| |Rated resistance|TC= 25°C|R25||5.00||kΩ| |Deviation of R100|TC= 100°C, R100= 493Ω|∆R/R|5||5|%| |Power dissipation|TC= 25°C|P25|||20.0|mW| |B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Specification according to the valid application note. > 1) Verified by characterization / design not by test. > 2) cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. V3.0, 2019-05-20 Final Data Sheet 4 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## 5 Module |5 Module||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Isolation test voltage|RMS, f = 0 Hz, t = 1 sec|VISOL||4.2<br>||kV| |Maximum RMS module terminal current|TF= 75°C, TCt= 105°C<br>TC= 85°C, TCt= 105°C|ItRMS||500<br>500||A| |Material of module baseplate||||Cu+Ni1)||| |Internal isolation|basic insulation (class 1, IEC 61140)|||Al2O32)||| |Creepage distance|terminal to heatsink<br>terminal to terminal|dCreep||9.0<br>9.0||mm| |Clearance|terminal to heatsink<br>terminal to terminal|dClear||4.5<br>4.5||mm| |Comperative tracking index||CTI||> 200||| ||||min.|typ.|max.|| |Maximum pressure in cooling circuit|Tbaseplate< 40°C<br>Tbaseplate> 40°C<br>(relative pressure)|p|||3.03)<br>2.5|bar| |Stray inductance module||LsCE||8.0||nH| |Module lead resistance, terminals - chip|TC= 25 °C, per switch|RCC'+EE'||0.75||mΩ| |Storage temperature||Tstg|-40||125|°C| |Mounting torque for modul mounting|Screw M4 baseplate to heatsink<br>Screw EJOT Delta PCB to frame|M|1.80<br>0.45|2.00<br>0.50|2.20<br>0.554)|Nm| |Weight||G||600||g| - 1) Ni plated Cu baseplate. > 2) Improved Al2O3 ceramic. 3) According to application note AN-HPD-ASSEMBLY 4) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY V3.0, 2019-05-20 Final Data Sheet 5 FS660R08A6P2FB HybridPACK™ Drive Module ## 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C **==> picture [504 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 1300 1300<br>Tvj = 25°C VGE = 19V<br>1200 Tvj = 150°C 1200 VGE = 17V<br>E Tvj = 175°C o e VGE = 15V a<br>1100 Ee Te 1100 IE VGE = 13V Gee<br>VGE = 11V<br>1000 S y 1000 VGE = 9V Epo<br>900 COCA 900 Be ier<br>COOPER C ee<br>800 800<br>700 700<br>COPE CE<br>CEPECET<br>600 600<br>Seeees ES COE<br>500 500<br>Sone) 4c eee ee<br>400 Sees 400 see<br>300 300<br>COOPER CE pesterre<br>200 200<br>COCA EE COE<br>100 COA 100 Ee<br>Ee<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC = f (VGE) Eon = f (IC), Eoff = f (IC),<br>VCE = 20 V VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V<br>1300 70<br>Tvj = 25°C Eon, Tvj = 150°C<br>1200 Tvj = 150°C Eoff, Tvj = 150°C<br>Ss Lolo] Fe<br>Tvj = 175°C Eon, Tvj = 175°C<br>1100 60 Eoff, Tvj = 175°C<br>iEF -7 OEOIL<br>1000<br>50<br>900 o o /<br>800<br>ee eee<br>40<br>700<br>s/o ne<br>ee Att<br>600<br> se a a<br>30<br>500<br>oe oF<br>400 a oe<br>20<br>300<br>so A<br>200 10<br>100 HSA eet<br>ey la<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V3.0, 2019-05-20 Final Data Sheet 6 FS660R08A6P2FB HybridPACK™ Drive Module switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V transient thermal impedance IGBT,Inverter ZthJC = f (t) thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K) **==> picture [502 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 140 1<br>Eon, Tvj = 150°C ZthJC : IGBT<br>Eoff, Tvj = 150°C<br>Eon, Tvj = 175°C<br>120 Eoff, Tvj = 175°C<br>By PSHE SE TEE yi<br>100<br>0,1<br>80<br>60 Al“a aa)Imie mi ae<br>0,01<br>40<br>20 tertt || ||) | S HES i: 1 2 3 4<br>ri[K/W]: 0,005 0,055 0,022 0,013<br>τ i[s]: 0,001 0,03 0,25 1,5<br>ATELY) t ice<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>reverse bias safe operating area IGBT,Inverter (RBSOA) capacity characteristic IGBT,Inverter (typical)<br>C = f (VCE) = f (VCE)CE)) C = f(VCE)<br>GE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°CGoff = 5,1 Ω, Tvj = 175°C = 5,1 Ω, Tvj = 175°CΩ, Tvj = 175°C, Tvj = 175°Cvj = 175°C = 175°C VGE = 0 V, Tvj = 25°C, f = 1MHz<br>1400 100<br>1300 Cies<br>Coes<br>1200 Cres<br>a<br>Se<br>1100<br>1000<br>re 10<br>900<br>800<br>700 a<br>600 Pot | rE ET a a<br>500<br>1<br>400 SSE eEEHY ER<br>300<br>IC, Modul<br>200 n IC, Chip o<br>100<br>S SE aee e<br>0 et h 0,1 [O CC S ES E=<br>0 100 200 300 400 500 600 700 800 0 100 200 300 400 500<br>VCE [V] VCE [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br> reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) = f (VCE)CE)) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°CGoff = 5,1 Ω, Tvj = 175°C = 5,1 Ω, Tvj = 175°CΩ, Tvj = 175°C, Tvj = 175°Cvj = 175°C = 175°C V3.0, 2019-05-20 Final Data Sheet 7 FS660R08A6P2FB HybridPACK™ Drive Module gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C **==> picture [502 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 15 800<br>QG VCES<br>12<br>775<br>ST<br>9<br>750<br>PI eee<br>6<br>3 725<br>PP LLL<br>0<br>700<br>SA ear<br>-3<br>675<br>PATE Creer<br>-6<br>PrP} LE<br>-9 650<br>0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 175 200<br>QG [µC] Tvj [°C]<br>forward characteristic of Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>F = f (VF) = f (VF)F)) Erec = f (IF),<br>RGon = 2.4 Ω, VCE = 400 V<br>1300 22<br>Tvj = 25°C Erec, Tvj = 150°C<br>1200 Tvj = 150°C 20 Erec, Tvj = 175°C<br>S Tvj = 175°C eow CEO<br>1100<br>18<br>1000<br>BE, Pe er<br>16<br>900 er / Le<br>14<br>800<br>coo Eee<br>700 12<br>CHeeeccyye) =r<br>POPPE<br>600 BREP A) 10 Dae<br>500 ppit<br>PT ti tTdAt ts 8 oPPye<br>400<br>Ee 6 TW TT PT Td<br>300<br>OOO Ap<br>4<br>200<br>poeta 2 Pec<br>100<br>Plea} OE<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0 100 200 300 400 500 600 700 800 900<br>VF [V] IF [A]<br> [V] [V]<br>GE CES<br>V V<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br> forward characteristic of Diode, Inverter (typical) IF = f (VF) = f (VF)F)) V3.0, 2019-05-20 Final Data Sheet 8 FS660R08A6P2FB HybridPACK™ Drive Module switching losses Diode, Inverter (typical) Erec = f (RG), IF = 450 A, VCE = 400 V transient thermal impedance Diode, Inverter ZthJC = f (t) thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K) **==> picture [500 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 20 1<br>Erec, Tvj = 150°C ZthJC : Diode<br>18 Erec, Tvj = 175°C<br>16 ToT ooty| ) llUd [Ee]<br>\<br>14<br>AREER Pricepe Baill<br>0,1<br>1210 BRN See) mn<br>8 --NSSEEEH E H FRR HSS<br>0,01<br>Coos CSIC<br>6<br>4 Litt To<br>i: 1 2 3 4<br>2 PL EEE PSEL a H ri[K/W]: e 0,015 0,1 0,025 0,01<br>LEE EIcor τ i[s]: 0,001 0,03 0,25 o 1,5<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> NTC-Thermistor-temperature characteristic (typical) R = f (T) **==> picture [250 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>=<br>—————_——<br>a ee eeee<br>10000<br>nt ft |<br>SS<br>ee Ne eee<br>1000<br>ERRNEEEE<br>ee<br>ee<br>EEE<br>100 Pt ee ee eeEE<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> V3.0, 2019-05-20 Final Data Sheet 9 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## 7 Circuit diagram **==> picture [461 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> P1 P2 P3<br>T1<br>C1 C3 C5<br>T<br>T2<br>G1 G3 G5<br>E1 E3 E5 T3<br>U V W T<br>C2 C4 C6<br>T4<br>G2 G4 G6 T5<br>E2 E4 E6 T<br>T6<br>N1 N2 N3<br>**----- End of picture text -----**<br> V3.0, 2019-05-20 Final Data Sheet 10 FS660R08A6P2FB HybridPACK™ Drive Module ## 8 Package outlines V3.0, 2019-05-20 Final Data Sheet 11 FS660R08A6P2FB HybridPACK™ Drive Module ## 9 Label Codes ## 9.1 Module Code |9 Label Codes<br>9.1 Module Code|||| |---|---|---|---| |Code Format|Data Matrix||| |Encoding|ASCII Text||| |Symbol Size|16x16||| |Standard|IEC24720 and IEC16022||| |Code Content|Content<br>Module Serial Number<br>Module Material Number<br>Production Order Number<br>Datecode (Production Year)<br>Datecode (Production Week)|Digit<br>1 - 5<br>6 - 11<br>12 - 19<br>20 - 21<br>22 - 23|Example (below)<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530||| ## 9.2 Packing Code |9.2 Packing Code||||| |---|---|---|---|---| |9.2 Packing Code<br>Code Format|Code128|||| |Encoding|Code Set A|||| |Symbol Size|34 digits|||| |Standard|IEC8859-1|||| |Code Content|Content<br>Backend Construction Number<br>Production Lot Number<br>Serial Number<br>Date Code<br>Box Quantity<br>~~Sn~~|Identifier<br>X<br>1T<br>S<br>9D<br>Q<br>~~Sn~~|Digit<br>2 - 9<br>12 - 19<br>21 - 25<br>28 - 31<br>33 - 34<br>~~Sn~~|Example (below)<br>95056609<br>2X0003E0<br>754389<br>1139<br>15<br>~~Sn~~| |Example|X950566091T2X0003E0S754389D1139Q15<br>~~Sn~~|||| V3.0, 2019-05-20 Final Data Sheet 12 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## Revision History Major changes since previous revision |Revision History|Revision History|| |---|---|---| |Reference|Date|Description| |V1.0|2017-05-08|Target datasheet| |V2.0|2018-03-07|-| |V3.0|2019-05-20|-| V3.0, 2019-05-20 Final Data Sheet 13 FS660R08A6P2FB HybridPACK™ Drive Module **==> picture [146 x 64] intentionally omitted <==** ## Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ## Trademarks ## Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. ## Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update 2011-11-11 V3.0, 2019-05-20 Final Data Sheet 14 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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