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FS650R08A4P2BPSA1
IGBT Module, Six Pack [Full Bridge], 375 A, 1.10 V, 488 W, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: HybridPACK
- IGBT Technology: IGBT EDT2 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 488W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Module
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 375A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Saturation Voltage: 1.10V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 230.88 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
# FS650R08A4P2 HybridPACK™ **FS650R08A4P2** DC6 Module **==> picture [215 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> T<br>T<br>-E =-E<br>T<br>| | |<br>VCES = 750 V<br>IC = 650 A<br>**----- End of picture text -----**<br> ## Typical Applications - •Automotive Applications - •Hybrid Electrical Vehicles (H)EV - •Motor Drives - •Commercial Agriculture Vehicles - Optimized for automotive applications with DC link voltages up to 470 V ## Electrical Features - •Blocking voltage 750V - •Low VCEsat - •Low Switching Losses - •Low Qg and Crss - •Low Inductive Design - •Tvj op = 150°C • Short-time extended Operation Temperature vj op ## Mechanical Features - •2.5kV AC 1min Insulation - •High Creepage and Clearance Distances - •Compact design - •High Power Density - •Direct Cooled Base Plate with Ribbon Bonds ## Description The HybridPACK[TM] DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. The new HybridPACK[TM] DC6i power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with ribbon bonds structure in the FS650R08A4P2 product shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. - •Guiding elements for PCB and cooler assembly - •Integrated NTC temperature sensor - •PressFIT Contact Technology - •RoHS compliant |Product Name|OrderingCode| |---|---| |FS650R08A4P2|SP001714512| Final Data Sheet 2 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## 2 IGBT,Inverter ## 2.1 Maximum Rated Values |2 IGBT,Inverter<br>2.1 Maximum Rated Values||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Collector-emitter voltage|Tvj= 25°C|VCES||750||V| |Implemented collector current||ICN||650||A| |Continuous DC collector current|TF= 65°C, Tvj max= 175°C|IC nom||3751)||A| |Repetitive peak collector current|tP= 1 ms|ICRM||1300||A| |Total power dissipation|TF= 75°C, Tvj max= 175°C|Ptot||4881)||W| |Gate-emitter peak voltage||VGES||+/-20||V| |2.2 Characteristic Values|||min.|typ.|max.|| |Collector-emitter saturation voltage|IC= 375 A, VGE= 15 V<br>IC= 375 A, VGE= 15 V<br>IC= 375 A, VGE= 15 V<br>IC= 650 A, VGE= 15 V Tvj= 25°C<br>IC= 650 A, VGE= 15 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VCE sat||1.10<br>1.15<br>1.15<br>1.30<br>1.45|1.35|V| |Gate threshold voltage|IC= 11.5 mA, VCE= VGE<br>Tvj= 175°C<br>Tvj= 25°C|VGEth|4.90|5.80<br>4,10|6.50|V| |Gate charge|VGE= -8 V ... 15 V, VCE= 400V|QG||3.55||µC| |Internal gate resistor|Tvj= 25°C|RGint||1.0||Ω| |Input capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cies||65.0||nF| |Output capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Coes||0.83||nF| |Reverse transfer capacitance|f = 1 MHz, VCE= 50 V, VGE= 0 V<br>Tvj= 25°C|Cres||0.25||nF| |Collector-emitter cut-off current|VCE= 750 V, VGE= 0 V<br>Tvj= 25°C|ICES|||1.0|mA| |Gate-emitter leakage current|VCE= 0 V, VGE= 20 V<br>Tvj= 25°C|IGES|||400|nA| |Turn-on delay time, inductive load|IC= 375 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td on||0.30<br>0.32<br>0.33||µs| |Rise time, inductive load|IC= 375 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tr||0.07<br>0.08<br>0.08||µs| |Turn-off delay time, inductive load|IC= 375 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|td off||0.80<br>0.88<br>0.92||µs| |Fall time, inductive load|IC= 375 A, VCE= 400 V<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|tf||0.06<br>0.07<br>0.08||µs| |Turn-on energy loss per pulse|IC= 375 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGon= 2.4Ω<br>di/dt (Tvj25°C) = 7000 A/µs<br>di/dt (Tvj175°C) = 4000 A/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eon||8.00<br>11.5<br>13.0||mJ| |Turn-off energy loss per pulse|IC= 375 A, VCE= 400 V, LS= 20 nH<br>VGE= -8 V / +15 V<br>RGoff= 5.1Ω<br>dv/dt (Tvj25°C) = 3800 V/µs<br>dv/dt (Tvj175°C) = 3300 V/µs<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Eoff||18.0<br>23.5<br>24.5||mJ| |SC data|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 25°C<br>Tvj= 175°C<br>tP ≤6 µs,<br>tP ≤3 µs,|ISC||3900<br>3200||A| |Thermal resistance, junction to cooling fluid|per IGBT;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.1702)|0.2052)|K/W| |Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| > 1) Verified by characterization / design not by test. > 2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 V3.0, 2020-05-06 3 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## 3 Diode, Inverter ## 3.1 Maximum Rated Values |3 Diode, Inverter<br>3.1 Maximum Rated Values||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Repetitive peak reverse voltage|Tvj= 25°C|VRRM||750||V| |Implemented forward current||IFN||650||A| |Continuous DC forward current||IF||3751)||A| |Repetitive peak forward current|tP= 1 ms|IFRM||1300||A| |I²t - value|VR= 0 V, tP= 10 ms, Tvj= 150°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t||16500<br>14000||A²s<br>A²s| |3.2 Characteristic Values|||min.|typ.|max.|| |Forward voltage|IF= 375 A, VGE= 0 V<br>IF= 375 A, VGE= 0 V<br>IF= 375 A, VGE= 0 V<br>IF= 650 A, VGE= 0 V Tvj= 25°C<br>IF= 650 A, VGE= 0 V Tvj= 175°C<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|VF||1.45<br>1.35<br>1.30<br>1.70<br>1.60|1.65|V| |Peak reverse recovery current|IF= 375 A, - diF/dt = 4000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|IRM||205<br>320<br>345||A| |Recovered charge|IF= 375 A, - diF/dt = 4000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Qr||24.5<br>47.5<br>56.0||µC| |Reverse recovery energy|IF= 375 A, - diF/dt = 4000 A/µs (Tvj= 150°C)<br>VR= 400 V<br>VGE= -8 V<br>Tvj= 25°C<br>Tvj= 150°C<br>Tvj= 175°C|Erec||8.60<br>16.0<br>19.0||mJ| |Thermal resistance, junction to cooling fluid|per diode;∆V/∆t = 10 dm³/min, TF= 75°C|RthJF||0.2302)|0.2752)|K/W| |Temperature under switching conditions|topcontinuous<br>for 10s within a period of 30s, occurence maximum 3000<br>times over lifetime|Tvj op|-40<br>150||1503)<br>175|°C| ## - 4 NTC Thermistor |||||||| |---|---|---|---|---|---|---| |4 NTC-Thermistor|||min.|typ.|max.|| |Parameter|Conditions|Symbol||Value||Unit| |Rated resistance|TC= 25°C|R25||5.00||kΩ| |Deviation of R100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Power dissipation|TC= 25°C|P25|||20.0|mW| |B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Specification according to the valid application note. > 1) Verified by characterization / design not by test. 2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. 3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. V3.0, 2020-05-06 Final Data Sheet 4 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## 5 Module |5 Module||||||| |---|---|---|---|---|---|---| |Parameter|Conditions|Symbol||Value||Unit| |Isolation test voltage|RMS, f = 50 Hz, t = 1 min|VISOL||2.5<br>||kV| |Material of module baseplate|||Cu/Ni/Al1)|||| |Internal isolation|basic insulation (class 1, IEC 61140)|||Al2O32)||| |Creepage distance|terminal to heatsink<br>terminal to terminal|dCreep||18.2<br>8.2||mm| |Clearance|terminal to heatsink<br>terminal to terminal|dClear||18.2<br>5.9||mm| |Comperative tracking index||CTI||> 200||| ||||min.|typ.|max.|| |Pressure drop in cooling circuit|∆V/∆t = 10.0 dm³/min; TF= 75°C|∆p||903)||mbar| |Maximum pressure in cooling circuit|Tbaseplate< 40°C<br>Tbaseplate ≥40°C<br>(relative pressure)|p|||2.5<br>2.0|bar| |Stray inductance module||LsCE||15||nH| |Storage temperature||Tstg|-40||125|°C| |Mounting torque for modul mounting|Screw M5 baseplate to heatsink|M|3.00||6.00|Nm| |Terminal connection torque|Screw M5|M|3.0|-|6.0|Nm| |Weight||G||490||g| 1) Ni plated Cu baseplate with Al ribbon bonds. 2) Improved Al2O3 ceramic. 3) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. V3.0, 2020-05-06 Final Data Sheet 5 FS650R08A4P2 HybridPACK™ DC6 Module ## 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C **==> picture [502 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 1300 1300<br>Tvj = 25°C VGE = 19V<br>1200 Tvj = 150°C 1200 VGE = 17V<br>Tvj = 175°C VGE = 15V<br>E b ol yw ee<br>1100 1100 VGE = 13V<br>a n | ana PAY] | TT<br>VGE = 11V<br>1000 P| | tt tL | LA WL 1000 VGE = 9V ay<br>900800 P|PPTi | tlTE deea 900800 P P| TTWAye | | |<br>700 700<br>Pitt ee<br>600 P| tT TAY | 600 ieee) 4a<br>500 P| || || dtdt || iseVA ft 500 PtPt ||weeWAAL |<br>400 Bae Azneee 400 ie Ae<br>300 eee ee 300 an42g<br>200100 P|P| ct LA LE 200100 ||Wert| |<br>0 || |Le| ywt| t L |t | 0 i| TAAe| | tt td<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0<br>VCE [V] VCE [V]<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>C = f (VGE) = f (VGE)GE)) Eon = f (IC), Eoff = f (IC),<br>CE = 20 V = 20 V VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V<br>1300 55<br>Tvj = 25°C Eon, Tvj = 150°C<br>1200 (een Tvj = 150°C ee 50 —_— Eoff, Tvj = 150°C 1.<br>Tvj = 175°C Eon, Tvj = 175°C<br>1100 By) Eoff, Tvj = 175°C | |g<br>45<br>en EBpe<br>1000<br>40<br>900 ttt ee a a<br>tA Pere<br>35<br>800<br>700 30<br>| ft | | pt | | ta<br>600 eeieee eee 25 eae<br>500<br>20<br>400 i<br>7 ee 15 ae ae<br>300<br>10<br>200<br>5<br>100 tL AZT) eer<br>ee)<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> transfer characteristic IGBT,Inverter (typical) IC = f (VGE) = f (VGE)GE)) VCE = 20 V = 20 V V3.0, 2020-05-06 Final Data Sheet 6 FS650R08A4P2 HybridPACK™ DC6 Module switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPDC6i ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol **==> picture [500 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 80 1<br>Eon, Tvj = 150°C ZthJF : IGBT<br>Eoff, Tvj = 150°C<br>70 Eon, Tvj = 175°C<br>Eoff, Tvj = 175°C<br>60<br>0,1<br>50<br>p o a iii bee<br>40<br>30<br>0,01<br>20 zero) |~4ey<br>10 i:ri[K/W]: 10,01 20,07 30,08 40,045<br>τ i[s]: 0,001 0,03 0,25 1,5<br>ACE) t rol<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ] thJF<br>Z<br>**----- End of picture text -----**<br> reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C thermal impedance IGBT,Inverter RthJF = f (∆V/∆t), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol **==> picture [500 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 1400 0,225<br>1300 RthJF: IGBT<br>1200<br>0,220<br>cee NI A<br>1100<br>1000<br>PERE EAH LINE ELE<br>0,215<br>900<br>PEEEEEEY prs<br>800<br>700 0,210<br>600<br>500<br>0,205<br>400 Soe ELLE NL<br>300<br>PES IC, Modul EEEA 0,200 COTES<br>200 IC, Chip<br>E OE ~<br>100<br>PEE EFEHY LEE<br>0 0,195<br>0 100 200 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 13 14<br>VCE [V] ∆ V/ ∆ t [dm³/min]<br> [A] [K/W]<br>IC<br>thJF<br>R<br>**----- End of picture text -----**<br> V3.0, 2020-05-06 Final Data Sheet 7 FS650R08A4P2 HybridPACK™ DC6 Module capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C **==> picture [501 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 100 15<br>QG<br>Cies 12<br>Coes<br>Cres<br>e d<br>9<br>10<br>6<br>|_| |_| PT TALLl<br>3<br>SSS eA<br>0<br>1<br>-3<br>S ees Ott<br>SS -6<br>P S} VEE<br>0,1 -9<br>0 100 200 300 400 500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] QG [µC]<br>maximum allowed collector-emitter voltage voltage slope IGBT,Inverter (typical)<br>CES = f(Tvj), verified by characterization / design not by test = f(Tvj), verified by characterization / design not by testvj), verified by characterization / design not by test), verified by characterization / design not by test dv/dt = f (RG)<br>CES = 1 mA for Tvj = 1 mA for Tvjvj ≤ 25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj = 150°C<br>800 3,5<br>VCES dv/dtoff: IGBT<br>dv/dton: IGBT<br>775 Fa yiyyiy) 3,0 (JA eo<br>2,5<br>TTT CENCE<br>750<br>2,0<br>TTT ALE ENG ELLED<br>725<br>/ ACCCEPSSCEEL<br>1,5<br>700<br>ALLELE) PSOPAE<br>1,0<br>675<br>PLL 0,5 Pees<br>POPPER) CECEEPPcnFF<br>650 0,0<br>-50 -25 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 20 22 24<br>Tvj [°C] RG [ Ω ]<br> [V]<br>GE<br>C [nF] V<br> [V]<br>CES<br>V<br>dv/dt [kV/µs]<br>**----- End of picture text -----**<br> maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test = f(Tvj), verified by characterization / design not by testvj), verified by characterization / design not by test), verified by characterization / design not by test ICES = 1 mA for Tvj = 1 mA for Tvjvj ≤ 25°C; ICES = 30 mA for Tvj > 25°CCES = 30 mA for Tvj > 25°C = 30 mA for Tvj > 25°Cvj > 25°C > 25°C V3.0, 2020-05-06 Final Data Sheet 8 FS650R08A4P2 HybridPACK™ DC6 Module current slope IGBT,Inverter (typical) di/dt = f (RG), VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj= 150°C forward characteristic of Diode, Inverter (typical) IF = f (VF) **==> picture [501 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 6 1300<br>di/dtoff: IGBT Tvj = 25°C<br>di/dton: IGBT 1200 Tvj = 150°C<br>Tvj = 175°C<br>5 fi SS— 1100 ee= LLLLLL<br>1000<br>mr T I TEL<br>900<br>yean eee<br>4<br>800<br>700<br>PRON) EEE<br>3<br>600<br>SSE ECP<br>500<br>2<br>UPSUESN FREE<br>400<br>300<br>1 CPTTEEES§ EE<br>200<br>100<br>EPEC) CC [E] eOaed [ES] eeTaAZ<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>RG [ Ω ] VF [V]<br>switching losses Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>rec = f (IF), = f (IF),F),), Erec = f (RG),<br>Gon = 2.4 Ω, VCE = 400 V = 2.4 Ω, VCE = 400 VΩ, VCE = 400 V, VCE = 400 VCE = 400 V = 400 V IF = 375 A, VCE = 400 V<br>28 22<br>= Erec, Tvj = 150°C Erec, Tvj = 150°C<br>26 L Erec, Tvj = 175°C L) 20 «No Erec, T e vj = 175°C<br>24<br>18<br>22 Se er LAC oe<br>20 a 16 ON<br>es rT IN N<br>18 Pee) 14 OLINN ITE<br>Wa \<br>16<br>12<br>Roe) NSS<br>14<br>10<br>12<br>Se a oe,<br>10 IEE 8 Pt PEAKE<br>8 TWIT2ee 6 OPES<br>6<br>4<br>4<br>ee<br>2<br>2 es<br>0 Fa OO 0<br>0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br> [A]<br>IF<br>di/dt [kA/µs]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> switching losses Diode, Inverter (typical) Erec = f (IF), = f (IF),F),), RGon = 2.4 Ω, VCE = 400 V = 2.4 Ω, VCE = 400 VΩ, VCE = 400 V, VCE = 400 VCE = 400 V = 400 V V3.0, 2020-05-06 Final Data Sheet 9 FS650R08A4P2 HybridPACK™ DC6 Module transient thermal impedance Diode, Inverter ZthJF = f(t), cooler design according to AN-HPDC6i ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol safe operation area Diode, Inverter (SOA) IR = f(VR) Tvj = 150°C **==> picture [508 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1400<br>ZthJF : Diode 1300<br>1200<br>1100<br>1000<br>0,1<br>900<br>SUI, | Eb<br>Se a ea 800 Pt tf fF tf tt<br>CERT CC 700 Pt | | [ | | Te<br>600<br>Boe a jf —<br>500<br>0,01<br>= ==<br>400<br>IR, RGon = 0.50 Ω<br>300 IR, RGon = 0.75 Ω<br>IR, RGon = 1.00 Ω<br>i: 1 2 3 4 200<br>ri[K/W]: 0,017 0,12 0,1 0,038<br>τ i[s]: 0,001 0,03 0,25 1,5 100<br>0,001 CCool ) © 0 EE S<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800<br>t [s] VR [V]<br>thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>RthJF = f(∆V/∆t), cooler design according to AN-HPDC6i R = f (T)<br>Tf = 75°C; 50% water / 50% ethylenglycol<br>0,295 100000<br>RthJF: Diode Rtyp<br>0,290<br>NEL | ==<br>0,285 10000<br>NEE) Geer<br>0,280 iiif=—_=—=—<br>-ELENELE GS<br>0,275 1000<br>ANOLE) ESSE<br>0,270 FN)oN ===a ee eS<br>EEL a e e e e eeee<br>0,265 ELL ) 100 (p pee<br>4 5 6 7 8 9 10 11 12 13 14 0 20 40 60 80 100 120 140 160<br>∆ V/ ∆ t [dm³/min] TC [°C]<br> [K/W] [A]<br>IR<br>thJF<br>Z<br>] Ω<br> [K/W]<br>R[<br>thJF<br>R<br>**----- End of picture text -----**<br> V3.0, 2020-05-06 Final Data Sheet 10 FS650R08A4P2 HybridPACK™ DC6 Module pressure drop in cooling circuit ∆p = f (∆V/∆t), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol **==> picture [244 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>∆ p: Modul<br>f= _LLLLLLL<br>140 DaefF | ee | es| ee | [ ft ft | Ue]<br>120 |P|| || || || [|[| || |[YA]Yt |<br>100 |P|| || || || [|[| |Yl |]| [|<br>80<br>P| Pt ty<br>fF | | | dT ALL LL Lf<br>60 PFP|| || |Ytyl[| |ft ft[ ||]ft<br>40 |Pt]| YE| || ct[ hdl| hctft || fl<br>20 ||| || || tl| tl[ ct| ht[ ff| [|<br>0 F | | | | [ | ft fff<br>4 5 6 7 8 9 10 11 12 13 14<br>∆ V/ ∆ t [dm³/min]<br>p [mbar]<br>∆<br>**----- End of picture text -----**<br> V3.0, 2020-05-06 Final Data Sheet 11 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## 7 Circuit diagram H _ P _DC6i **==> picture [506 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> P1 P2 P3<br>T1<br>C1 C3 C5<br>T<br>T2<br>G1 G3 G5<br>E1 E3 E5 T3<br>U V W T<br>T4<br>T5<br>G2 G4 G6<br>E2 E4 E6 T<br>T6<br>N1 N2 N3<br>**----- End of picture text -----**<br> V3.0, 2020-05-06 Final Data Sheet 12 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## 8 Package outlines **==> picture [510 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> 140 � 0,4<br>63,55<br>62,85<br>102,4 max. Reserved area<br>A<br>3,05 max. loop height 47,6<br>43,5 43 � 0,3<br>36,8<br>29,05<br>A ( 2 : 1 ) C ( 5 : 1 )<br>21,75<br>(4)<br>C 14 � 0,3<br>6,9<br>0 0<br>5,85<br>6,55<br>** Pin positions checked<br> with pin gauge according<br>� ** A B C to Application Note<br>� 6,6 � 0,1 21x<br>� � 1,0 A B C (15)<br>9x<br>W V U D-D ( 1 : 1 )<br>77,5 � � 1,0 A B C<br>D � 3x � 0,2 A B C 9,8 min. B<br>57<br>E5 E3 A E1 D<br>G5 G3 G1<br>C5 C3 C1 C<br>T6 T4 T2 for Ejot PT30x10<br>(23,57) T5 T3 T1<br>G6 G4 G2<br>E6 E4 E2 B ( 2 : 1 ) 10,5 min.<br>0<br>B<br>20,5<br>P3 N3 P2 N2 P1 N1<br>12,85 � 0,2 (4x) (Control board height)<br>All dimensions are measured in the delivered state.<br>Sprue area, max. height 0,6mm<br>(<br>)<br>�<br>6,2<br>0,5 � 0,5 � 0,5 �<br>22,35 0 1,5 126,5<br>0,5 (9x)<br> �<br>17,05 0,4<br> �<br>112,6<br>(2)<br>0 7,1 23,65 25,5 27,35 44,8 62,15 64 65,85 83,2 100,65 102,5 104,35 120,9<br>0,15<br> �<br>0,1 4,9<br> �<br>2,4<br>0,05+ -0,15<br>5,5 max. Reserved area<br>48,4 0,15<br> �<br>5,4<br>M5<br>0 11 17 32 53 )(56 64 75 96 111 117 128<br>�<br>�<br>�<br>�<br>**----- End of picture text -----**<br> V3.0, 2020-05-06 Final Data Sheet 13 FS650R08A4P2 HybridPACK™ DC6 Module ## 9 Label Codes ## 9.1 Module Code |9 Label Codes<br>9.1 Module Code|||| |---|---|---|---| |Code Format|Data Matrix||| |Encoding|ASCII Text||| |Symbol Size|16x16||| |Standard|IEC24720 and IEC16022||| |Code Content|Content<br>Module Serial Number<br>Module Material Number<br>Production Order Number<br>Datecode (Production Year)<br>Datecode (Production Week)|Digit<br>1 - 5<br>6 - 11<br>12 - 19<br>20 - 21<br>22 - 23|Example (below)<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530||| ## 9.2 Packing Code |9.2 Packing Code||||| |---|---|---|---|---| |9.2 Packing Code<br>Code Format|Code128|||| |Encoding|Code Set A|||| |Symbol Size|34 digits|||| |Standard|IEC8859-1|||| |Code Content|Content<br>Backend Construction Number<br>Production Lot Number<br>Serial Number<br>Date Code<br>Box Quantity<br>~~Sn~~|Identifier<br>X<br>1T<br>S<br>9D<br>Q<br>~~Sn~~|Digit<br>2 - 9<br>12 - 19<br>21 - 25<br>28 - 31<br>33 - 34<br>~~Sn~~|Example (below)<br>95056609<br>2X0003E0<br>754389<br>1139<br>15<br>~~Sn~~| |Example|X950566091T2X0003E0S754389D1139Q15<br>~~Sn~~|||| V3.0, 2020-05-06 Final Data Sheet 14 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## Revision History Major changes since previous revision |Revision History|Revision History|| |---|---|---| |Reference|Date|Description| |V1.0|2017-08-31|Target datasheet| |V1.1|2018-01-18|Change of package designation| |V1.2|2018-06-25|Extention of target data (E, Rth, ...)| |V1.3|2019-02-12|New package outlines / pinning| |V2.0|2019-10-30|Preliminary datasheet| |V3.0|2020-05-06|Final datasheet| V3.0, 2020-05-06 Final Data Sheet 15 FS650R08A4P2 HybridPACK™ DC6 Module **==> picture [146 x 64] intentionally omitted <==** ## Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ## Trademarks ## Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. ## Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update 2011-11-11 V3.0, 2020-05-06 Final Data Sheet 16 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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