![FS50R12W2T4B11BOMA1 — IGBT Module, Six Pack [Full Bridge], 50 A, 1.85 V, 335 W, 150 °C, Module](/media/B/6/6/735D8EFA3F80066B.webp)
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FS50R12W2T4B11BOMA1
IGBT Module, Six Pack [Full Bridge], 50 A, 1.85 V, 335 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:1.2kV; Trans
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 18Pins
- Product Range: -
- IGBT Technology: IGBT 4
- IGBT Termination: Press Fit
- Power Dissipation: 335W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Polarity: N Channel
- DC Collector Current: 50A
- Power Dissipation Pd: 335W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 32.15 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS50R12W2T4_B11
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VCES = 1200V IC nom = 50A / ICRM = 100A
- Klimaanlagen
- • Motorantriebe • Servoumrichter
- USV-Systeme
-
-
-
-
-
-
- VCEsat mit
- • Niedriges V CEsat
-
-
- VCEsat with
- • Low V CEsat
- Al2O3 Substrat mit kleinem thermischen Widerstand
-
-
- Robuste Montage durch integrierte Befestigungsklammern
- Al2O3
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-
• Rugged mounting due to integrated mounting clamps
1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS50R12W2T4_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS50R12W2T4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>50<br>83<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>335<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2000 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>3,60<br>5,10<br>5,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 3800 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,50<br>4,10<br>4,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,40<br>0,45<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,65<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS50R12W2T4_B11
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|385<br>355<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||70,0<br>75,0<br>77,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,20<br>3,60||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,65|0,75|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�DK date�of�publication:�2013-11-04 approved�by:�MB revision:�2.1
3
## Technische�Information�/�Technical�Information
## IGBT-Module IGBT-modules FS50R12W2T4_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||40||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin.
date�of�publication:�2013-11-04 revision:�2.1
prepared�by:�DK approved�by:�MB
4
## IGBT-Module IGBT-modules
## FS50R12W2T4_B11
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 a 7 100 es | [ov<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C Tepe} 90 | VGE = 17V L i Aa | be<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>80 ee 80 VGE = 11V ane<br>VGE = 9V<br>Pt a PE e e<br>70 70<br>PP ye: E e—<br>60 fe 60 —<br>50 50<br>PPou Awa TE EEey ee<br>40 SRR ,ARE eee 40 i;22a4<br>vA<br>vA<br>30 30<br>20 20<br>ee eeee<br>10 10<br>PA LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V<br>100 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C 14 Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>80<br>Bop Eby<br>12<br>70<br>10<br>60<br>CCE PAE LE Le<br>50 8<br>o “-<br>40 “OY Atl<br>6<br>30<br>4<br>20<br>2<br>10<br>i Ae a<br>poe CU<br>0 0<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## FS50R12W2T4_B11
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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =600V<br>14 ————__—_— Eon, Tvj = 125°C 10 a | HH— ZthJH e : IGBT EeeE e HH} tHee<br>Eoff, Tvj = 125°C<br>12 F Eon, Tvj = 150°C oo o TTT<br>Eoff, Tvj = 150°C<br>ETT T AT HE t)ee)| Ler eeESTHETeeHHI<br>10<br>et 1 EIEA N<br>Pa LETHE 7<br>8 AKat q P it<br>B a ee<br>6 C a ll<br>2ve poop fp nd<br>0,1 a<br>4 7eth<br>2<br>ee a ee |<br>eeee<br>rr ae ene|| |<br>2 i: 1 2 3 4<br>ri[K/W]: 0,042 0,093 0,387 0,528<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,01<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =15 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>FE _Li TT T FE PLL<br>90<br>80<br>80<br>SR E EHE ai a<br>70<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>oe oe<br>10 ee 10<br>0 PE PP CL ee 0 e eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
## IGBT-Module IGBT-modules
## FS50R12W2T4_B11
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Erec =f(I F) Erec =f(R G)<br>RGon Ns Ω ,V CE =600V IF = 50K V CE = 600 V<br>5,0 4,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 ( Erec, Tvj = 150°C ey 4,0 Erec, Tvj = 150°C<br>Toy ee ee ee<br>4,0<br>3,5<br>Pt eerer -<br>3,5<br>ae LE LEE<br>3,0<br>Baas aeeee PSP<br>3,0<br>2,5<br>2,5 Pt rza EE CUPPaeeKEERELTT<br>a COLLET<br>2,0<br>2,0 PL AT TT TE Treee<br>1,5<br>ZCi / LE<br>1,5<br>1,0<br>1,0<br>PA eeSee<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 100000<br>ZthJH : Diode Rtyp<br>{— et (_— (SSeS<br>eeePT TTee eeTTT l eeTTT Pot Se ft fT tTeefT tTeeft fTeefT tTeetT ft Tt<br>a ll pt ft ft tT | TE<br>PT TUT TENE ETE Pt tt tT te tT tT tT TE | tt<br>Mem o KLEE EEE<br>1 10000<br>eee ae oo oo a<br>Sse ee 280s a ET TT ———<br>PTPT TT re ETT Neee ee<br>ot TTtt beth T T T TT TTTT P|ee[TNTNEeeeeeeetT tT tT tT fT tT tT tT<br>ALR AILI MBA SS<br>0,1 20 1000 SS<br>PEE ECE ——<br>a SS<br>PTPT TTTTT TTTETTTTT Poteeeft fT fT Tt tT ft ft fT RAT TTee<br>ed a a<br>i: 1 2 3 4<br>ri[K/W]: 0,085 0,197 0,605 0,614<br>PT T τ i[s]: 0,0005 0,005 T 0,05 0,2 Pt tt tT te tT ET ET EA<br>ME<br>0,01 | imtoo } 3S 100 LLEE<br>0,001 0,01 0,1 1 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS50R12W2T4_B11
## **Schaltplan�/�circuit_diagram_headline**
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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prepared�by:�DK date�of�publication:�2013-11-04<br>approved�by:�MB revision:�2.1<br>**----- End of picture text -----**<br>
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
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FS50R12W2T4_B11<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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