![FS500R17OE4DB81BPSA1 — IGBT Module, Six Pack [Full Bridge], 500 A, 1.95 V, 150 °C, Module](/media/7/2/8/82C31163D3E50827.webp)
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FS500R17OE4DB81BPSA1
IGBT Module, Six Pack [Full Bridge], 500 A, 1.95 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK TrenchStop
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 500A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 500A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1253.67 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FS500R17OE4D_B81 VCES = 1700V IC nom = 500A / ICRM = 1000A - Hilfsumrichter • - • Hochleistungsumrichter • • Motorantriebe • • Windgeneratoren • - - - - T - - - - T - • - H2 - H2 - • - • - • - • - • **Digit** Datasheet www.infineon.com 2019-10-21 FS500R17OE4D_B81 **==> picture [86 x 38] intentionally omitted <==** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 95°C, Tvj max= 175°C|ICDC|500|||A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1000|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 500 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,95<br>2,35<br>2,45|2,30|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 20,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V| |Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||5,10||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||40,0||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,28||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||3,0|mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,19<br>0,23<br>0,24||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,08<br>0,08<br>0,09||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,70<br>0,85<br>0,90||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,11<br>0,16<br>0,18||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 500 A, VCE= 900 V, Lσ= 35 nH<br>di/dt = 6200 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||123<br>166<br>176||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 500 A, VCE= 900 V, Lσ= 35 nH<br>du/dt = 3100 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||94,0<br>156<br>174||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||2100||A| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||0,0500|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0361||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 2 V�3.0 2019-10-21 Datasheet FS500R17OE4D_B81 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|500|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1000|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|40800<br>37000<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 500 A, VGE= 0 V<br>IF= 500 A, VGE= 0 V<br>IF= 500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,76<br>1,80|2,05|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 500 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||701<br>815<br>855||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 500 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||144<br>240<br>267||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 500 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||82,0<br>149<br>170||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,0840|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0394||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 3 V�3.0 2019-10-21 Datasheet FS500R17OE4D_B81 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,4<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||18,5<br>12,6<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||16,0<br>10,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| |RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||924||g| V�3.0 2019-10-21 Datasheet 4 FS500R17OE4D_B81 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>900 T vj = 150°C 900 V GE = 12V<br>VGE = 10V<br>VGE = 9V<br>800 800 V GE = 8V<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.8� Ω ,�RGoff�=�1.8� Ω ,�VCE�=�900�V **==> picture [487 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 500<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>900 T vj = 150°C 450 E off , T vj = 125°C<br>Eoff, Tvj = 150°C<br>800 400<br>700 350<br>600 300<br>500 250<br>400 200<br>300 150<br>200 100<br>100 50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800 900 1000<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�3.0 2019-10-21 Datasheet 5 FS500R17OE4D_B81 **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =500A,V CE =900V<br>700 0,1 pot TT<br>Eon, Tvj = 125°C 4 ZthJC : IGBT<br>Eon, Tvj = 150°C y [—<br>600 EEoff off , T, Tvj vj = 125°C = 150°C<br>500<br>400<br>0,01<br>300<br>200<br>100 i: 1 2 3 4<br>ri[K/W]: 0,0037 0,0226 0,0191 0,0046<br>τ i[s]: 0,001 0,027 0,053 0,9<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **(RBSOA)** > IF =f(V F) **==> picture [486 x 301] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE)<br>VGE =415V,R Goff =1.8 Ω ,T vj =150°C<br>1050 1000<br>IC, Modul Tvj = 25°C //<br>IC, Chip Tvj = 125°C /}<br>900 T vj = 150°C /}<br>900<br>800 !<br>750<br>700<br>600<br>600 Eli<br>500<br>450<br>400<br>300<br>300<br>200<br>150<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 Datasheet 2019-10-21 FS500R17OE4D_B81 **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon 15 Ω ,V CE =900V IF = 500A, V CE = 900 V<br>220 200<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>200 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>180<br>180<br>160<br>160<br>140<br>140 sine<br>~<br>120 120 NX N<br> N<br>100 100<br>80<br>80<br>60<br>60<br>40<br>40<br>20<br>0 20<br>0 100 200 300 400 500 600 700 800 900 1000 0 2 4 6 8 10 12 14 16 18 20<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [487 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f (t) R=f(T)<br>1 a ee eee 100000 a a a a a<br>HES ZthJC : Diode Hp Rtyp<br>ee ee a ee<br>Po a ee<br>0,1 10000<br>Seer emeenitl eerie ee ee ee ee<br>0,01 1000<br>i: 1 2 3 4<br>ri[K/W]: 0,009 0,0325 0,0332 0,0096<br>τ i[s]: 0,00095 0,0247 0,0493 0,9<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> Datasheet 7 2019-10-21 FS500R17OE4D_B81 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** **==> picture [432 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [44 x 36] intentionally omitted <==** **==> picture [44 x 52] intentionally omitted <==** **==> picture [44 x 52] intentionally omitted <==** **==> picture [44 x 36] intentionally omitted <==** **==> picture [44 x 36] intentionally omitted <==** **==> picture [44 x 52] intentionally omitted <==** **==> picture [44 x 52] intentionally omitted <==** **==> picture [44 x 36] intentionally omitted <==** 8 V�3.0 2019-10-21 Datasheet ## **Trademarks** ## **WARNHINWEIS** ## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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