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FS3L40R12W2H7PB11BPSA1
IGBT Module, 25 A, 1.7 V, 20 mW, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK 2B Series
- IGBT Technology: -
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: -
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 51.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** _— ## **Final datasheet EasyPACK[™] 2B module and PressFIT / pre-applied thermal interface material / NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 40 A / ICRM = 80 A - Ultra fast IGBT chips - Overload operation up to 175°C - Low switching losses - Low V CE,sat - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - 3 kV AC 1 minute insulation - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps - Pre-applied thermal interface material ## ~~**P**~~ **otential applications** - Three-level applications - Solar applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-12-12 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1-T2 / T5-T6 / T9-T10**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, D1-D2 / D5-D6 / D9-D10**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**IGBT, T3-T4 / T7-T8 / T11-T12**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Diode, D3-D4 / D7-D8 / D11-D12**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| |**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18| |**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21| Datasheet Revision 1.00 2023-12-12 2 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.0|kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.0|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3|| |Comparative tracking<br>index|_CTI_||||> 225|| |Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C| **Table 2 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||30||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch|||7||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Maximum baseplate<br>operation temperature|_T_BPmax|||||125|°C| |Mounting force per clamp|_F_|||40||80|N| |Weight|_G_||||39||g| _**Note** : Storage and shipment of modules with TIM => see AN2012-07_ _The current under continuous operation is limited to 25 A rms per connector pin._ ## **2 IGBT, T1-T2 / T5-T6 / T9-T10** ## **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||40|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|25|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||80|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2023-12-12 3 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1-T2 / T5-T6 / T9-T10** |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 40 A,_V_GE= 15 V|_T_vj= 25 °C||1.70|2.25|V| ||||_T_vj= 125 °C||1.90||| ||||_T_vj= 175 °C||2.00||| |Gate threshold voltage|_V_GEth|_I_C= 8.16 mA, VCE= VGE,_T_vj= 25 °C||4.85|5.5|6.15|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V|||0.59||µC| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||4.54||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.086||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||3.5|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 40 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.021||µs| ||||_T_vj= 125 °C||0.025||| ||||_T_vj= 175 °C||0.026||| |Rise time (inductive load)|_t_r|_I_C= 40 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gon= 0.51 Ω|_T_vj= 25 °C||0.017||µs| ||||_T_vj= 125 °C||0.020||| ||||_T_vj= 175 °C||0.022||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 40 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gof= 0.62 Ω|_T_vj= 25 °C||0.110||µs| ||||_T_vj= 125 °C||0.140||| ||||_T_vj= 175 °C||0.160||| |Fall time (inductive load)|_t_f|_I_C= 40 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gof= 0.62 Ω|_T_vj= 25 °C||0.080||µs| ||||_T_vj= 125 °C||0.150||| ||||_T_vj= 175 °C||0.180||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 40 A,_V_CC= 350 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gon= 0.51 Ω, di/dt =<br>1130 A/ns (Tvj= 175 °C)|_T_vj= 25 °C||0.36||mJ| ||||_T_vj= 125 °C||0.51||| ||||_T_vj= 175 °C||0.58||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 40 A,_V_CC= 350 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gof= 0.62 Ω, dv/dt =<br>5300 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.81||mJ| ||||_T_vj= 125 °C||1.22||| ||||_T_vj= 175 °C||1.45||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT, Valid with IFX pre-applied Thermal<br>Interface Material||||1.68|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| Datasheet Revision 1.00 2023-12-12 4 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, D1-D2 / D5-D6 / D9-D10** _**Note** : Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ ## **3 Diode, D1-D2 / D5-D6 / D9-D10** |**3**<br>**Diode, D1-D2 / D5-D6 / D9-D10**|**3**<br>**Diode, D1-D2 / D5-D6 / D9-D10**|**3**<br>**Diode, D1-D2 / D5-D6 / D9-D10**||||| |---|---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C||1200|V| |Implemented forward<br>current|_I_FN||||40|A| |Continuous DC forward<br>current|_I_F||||25|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|||80|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||61|A²s| ||||_T_vj= 175 °C||35|| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 40 A,_V_GE= 0 V|_T_vj= 25 °C||2.50|3.05|V| ||||_T_vj= 125 °C||2.18||| ||||_T_vj= 175 °C||1.98||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 350 V,_I_F= 40 A,<br>_V_GE= -15 V, -diF/dt = 2.1<br>kA/µs (Tvj= 175 °C)|_T_vj= 25 °C||36.4||A| ||||_T_vj= 125 °C||52.2||| ||||_T_vj= 175 °C||58.6||| |Recovered charge|_Q_r|_V_CC= 350 V,_I_F= 40 A,<br>_V_GE= -15 V, -diF/dt = 2.1<br>kA/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.68||µC| ||||_T_vj= 125 °C||1.61||| ||||_T_vj= 175 °C||2.22||| |Reverse recovery energy|_E_rec|_V_CC= 350 V,_I_F= 40 A,<br>_V_GE= -15 V, -diF/dt = 2.1<br>kA/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.214||mJ| ||||_T_vj= 125 °C||0.503||| ||||_T_vj= 175 °C||0.647||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode, Valid with IFX pre-applied<br>Thermal Interface Material||||2.07|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ Datasheet Revision 1.00 2023-12-12 5 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** **4 IGBT, T3-T4 / T7-T8 / T11-T12** ## **4 IGBT, T3-T4 / T7-T8 / T11-T12** |**4**<br>**IGBT, T3-T4 / T7-T8 / T11-T12**|**4**<br>**IGBT, T3-T4 / T7-T8 / T11-T12**|**4**<br>**IGBT, T3-T4 / T7-T8 / T11-T12**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C||650|V| |Implemented collector<br>current|_I_CN||||35|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C||20|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op|||70|A| |Gate-emitter peak voltage|_V_GES||||±20|V| **Table 8 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 35 A,_V_GE= 15 V|_T_vj= 25 °C||1.42|1.90|V| ||||_T_vj= 125 °C||1.53||| ||||_T_vj= 175 °C||1.62||| |Gate threshold voltage|_V_GEth|_I_C= 6.5 mA, VCE= VGE,_T_vj=|25 °C|3.25|4|4.75|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 400 V|||0.143||µC| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||25.2||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.078||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||24|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 35 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gon= 1.5 Ω|_T_vj= 25 °C||0.010||µs| ||||_T_vj= 125 °C||0.011||| ||||_T_vj= 175 °C||0.012||| |Rise time (inductive load)|_t_r|_I_C= 35 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gon= 1.5 Ω|_T_vj= 25 °C||0.013||µs| ||||_T_vj= 125 °C||0.015||| ||||_T_vj= 150 °C||0.015||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 35 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gof= 1.5 Ω|_T_vj= 25 °C||0.075||µs| ||||_T_vj= 125 °C||0.092||| ||||_T_vj= 175 °C||0.099||| **(table continues...)** Datasheet Revision 1.00 2023-12-12 6 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D3-D4 / D7-D8 / D11-D12** |**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 35 A,_V_CC= 350 V,<br>_V_GE= ±15 V,_R_Gof= 1.5 Ω|_T_vj= 25 °C||0.036||µs| ||||_T_vj= 125 °C||0.051||| ||||_T_vj= 175 °C||0.071||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 35 A,_V_CC= 350 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gon= 1.5 Ω, di/dt =<br>1790 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.13||mJ| ||||_T_vj= 125 °C||0.2||| ||||_T_vj= 175 °C||0.26||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 35 A,_V_CC= 350 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gof= 1.5 Ω, dv/dt =<br>7570 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.432||mJ| ||||_T_vj= 125 °C||0.625||| ||||_T_vj= 175 °C||0.737||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT, Valid with IFX pre-applied Thermal<br>Interface Material||||2.59|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| ## **5 Diode, D3-D4 / D7-D8 / D11-D12** **Table 9 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||50|A| |Continuous DC forward<br>current|_I_F|||25|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|87|A²s| ||||_T_vj= 175 °C|69.7|| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,_V_GE= 0 V|_T_vj= 25 °C||1.65|2.15|V| ||||_T_vj= 125 °C||1.55||| ||||_T_vj= 175 °C||1.45||| ## **(table continues...)** Datasheet Revision 1.00 2023-12-12 7 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **6 NTC-Thermistor** |**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Peak reverse recovery<br>current|_I_RM|_V_CC= 350 V,_I_F= 50 A,<br>-diF/dt = 1430 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||25.4||A| ||||_T_vj= 125 °C||33.3||| ||||_T_vj= 175 °C||37.8||| |Recovered charge|_Q_r|_V_CC= 350 V,_I_F= 50 A,<br>-diF/dt = 1430 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||0.9||µC| ||||_T_vj= 125 °C||1.71||| ||||_T_vj= 175 °C||2.22||| |Reverse recovery energy|_E_rec|_V_CC= 350 V,_I_F= 50 A,<br>-diF/dt = 1430 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||0.223||mJ| ||||_T_vj= 125 °C||0.428||| ||||_T_vj= 175 °C||0.555||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode, Valid with IFX pre-applied<br>Thermal Interface Material||||1.83|K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| ## **6 NTC-Thermistor** |**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 11**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4_ Datasheet Revision 1.00 2023-12-12 8 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **Output characteristic (typical), IGBT, T1-T2 / T5-T6 / T9-T10** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, T1-T2 / T5T6 / T9-T10** IC = f(VCE) T = 175 °C vj **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0<br>Transfer characteristic (typical), IGBT, T1-T2 / T5-T6 / Gate charge characteristic (typical), IGBT, T1-T2 / T5-<br>T9-T10 T6 / T9-T10<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 40 A, Tvj = 25 °C<br>80 15<br>70<br>10<br>60<br>5<br>50<br>40 0<br>30<br>-5<br>20<br>-10<br>10<br>0 -15<br>5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0.00 0.10 0.20 0.30 0.40 0.50 0.60<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 9 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **Capacity characteristic (typical), IGBT, T1-T2 / T5-T6 / T9-T10** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **Switching times (typical), IGBT, T1-T2 / T5-T6 / T9-T10** t = f(RG) VGE = ±15 V, IC = 40 A, VCC = 350 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1-T2 / T5-T6 / T9-T10** t = f(IC) VCC = 350 V, RGoff = 0.62 Ω, RGon = 0.51 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, T1-T2 / T5-T6 / T9-T10** E = f(IC) RGoff = 0.62 Ω, RGon = 0.51 Ω, VCC = 350 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3.00<br>2.75<br>2.50<br>2.25<br>2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>0.00<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 10 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T1-T2 / T5-T6 / T9-T10** E = f(RG) ## IC = 40 A, VCC = 350 V, VGE = ± 15 V **Reverse bias safe operating area (RBSOA), IGBT, T1T2 / T5-T6 / T9-T10** IC = f(VCE) RGoff = 0.62 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [540 x 569] intentionally omitted <==** **----- Start of picture text -----**<br> 3.00 90<br>2.75<br>80<br>2.50<br>70<br>2.25<br>2.00 60<br>1.75<br>50<br>1.50<br>40<br>1.25<br>1.00 30<br>0.75<br>20<br>0.50<br>10<br>0.25<br>0.00 0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 200 400 600 800 1000 1200 1400<br>Transient thermal impedance, IGBT, T1-T2 / T5-T6 / T9- Forward characteristic (typical), Diode, D1-D2 / D5-<br>T10 D6 / D9-D10<br>Zth = f(t) IF = f(VF)<br>10 80<br>70<br>60<br>50<br>1 40<br>30<br>20<br>10<br>0.1 0<br>0.001 0.01 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 11 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **==> picture [540 x 646] intentionally omitted <==** **----- Start of picture text -----**<br> Switching losses (typical), Diode, D1-D2 / D5-D6 / D9- Switching losses (typical), Diode, D1-D2 / D5-D6 / D9-<br>D10 D10<br>Erec = f(IF) Erec = f(RG)<br>VCE = 350 V, RG = 1.5 Ω VCE = 350 V, IF = 40 A<br>0.80 0.80<br>0.75 0.75<br>0.70 0.70<br>0.65 0.65<br>0.60 0.60<br>0.55 0.55<br>0.50 0.50<br>0.45 0.45<br>0.40 0.40<br>0.35 0.35<br>0 10 20 30 40 50 60 70 80 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0<br>Transient thermal impedance, Diode, D1-D2 / D5-D6 / Output characteristic (typical), IGBT, T3-T4 / T7-T8 /<br>D9-D10 T11-T12<br>Zth = f(t) IC = f(VCE)<br>VGE = 15 V<br>10 70<br>60<br>50<br>40<br>1<br>30<br>20<br>10<br>0.1 0<br>0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 12 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **Output characteristic field (typical), IGBT, T3-T4 / T7T8 / T11-T12** IC = f(VCE) ## T = 175 °C vj ## **Transfer characteristic (typical), IGBT, T3-T4 / T7-T8 / T11-T12** IC = f(VGE) VCE = 20 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>Gate charge characteristic (typical), IGBT, T3-T4 / T7- Capacity characteristic (typical), IGBT, T3-T4 / T7-T8 /<br>T8 / T11-T12 T11-T12<br>VGE = f(QG) C = f(VCE)<br>IC = 35 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 100<br>10<br>10<br>5<br>0 1<br>-5<br>0.1<br>-10<br>-15 0.01<br>0.000 0.030 0.060 0.090 0.120 0.150 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 13 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **==> picture [248 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Switching times (typical), IGBT, T3-T4 / T7-T8 / T11-<br>T12<br>**----- End of picture text -----**<br> **==> picture [32 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> t = f(IC)<br>**----- End of picture text -----**<br> RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCC = 350 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T3-T4 / T7-T8 / T11T12** E = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VCC = 350 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.80<br>1.60<br>1.40<br>1.20<br>1.00<br>0.80<br>0.60<br>0.40<br>0.20<br>0.00<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> **==> picture [248 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Switching times (typical), IGBT, T3-T4 / T7-T8 / T11-<br>T12<br>**----- End of picture text -----**<br> t = f(RG) VGE = ±15 V, IC = 35 A, VCC = 350 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, T3-T4 / T7-T8 / T11T12** E = f(RG) IC = 35 A, VCC = 350 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.80<br>1.60<br>1.40<br>1.20<br>1.00<br>0.80<br>0.60<br>0.40<br>0.20<br>0.00<br>0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 14 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **Reverse bias safe operating area (RBSOA), IGBT, T3T4 / T7-T8 / T11-T12** IC = f(VCE) **Transient thermal impedance, IGBT, T3-T4 / T7-T8 / T11-T12** Zth = f(t) RGoff = 1.5 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> ## **Forward characteristic (typical), Diode, D3-D4 / D7D8 / D11-D12** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D3-D4 / D7-D8 / D11D12** Erec = f(IF) VCE = 350 V, RG = 0.51 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.90<br>0.80<br>0.70<br>0.60<br>0.50<br>0.40<br>0.30<br>0.20<br>0.10<br>0.00<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 15 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **==> picture [540 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> Switching losses (typical), Diode, D3-D4 / D7-D8 / D11- Transient thermal impedance, Diode, D3-D4 / D7-D8 /<br>D12 D11-D12<br>Erec = f(RG)rec = f(RG) = f(RG)G)) Zth = f(t)th = f(t) = f(t)<br>VCE = 350 V, IF = 50 ACE = 350 V, IF = 50 A = 350 V, IF = 50 AF = 50 A = 50 A<br>1.00 10<br>0.90<br>0.80<br>0.70<br>0.60<br>0.50 1<br>0.40<br>0.30<br>0.20<br>0.10<br>0.00 0.1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.001 0.01 0.1 1 10<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)NTC))<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [540 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> Switching losses (typical), Diode, D3-D4 / D7-D8 / D11- Transient thermal impedance, Diode, D3-D4 / D7-D8 /<br>D12 D11-D12<br>Erec = f(RG)rec = f(RG) = f(RG)G)) Zth = f(t)th = f(t) = f(t)<br>VCE = 350 V, IF = 50 ACE = 350 V, IF = 50 A = 350 V, IF = 50 AF = 50 A = 50 A<br>1.00 10<br>0.90<br>0.80<br>0.70<br>0.60<br>0.50 1<br>0.40<br>0.30<br>0.20<br>0.10<br>0.00 0.1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.001 0.01 0.1 1 10<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)NTC))<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-12-12 16 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Circuit diagram** ## **8 Circuit diagram** **==> picture [523 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> P1<br>D4 E3 G3T3 T1 D1 D8 E7 G7T7 T5 D5 D12 E11 G11T11 T9 D9<br>G1 G5 G9<br>X7<br>E1 E5 E9<br>X2 X1 X4 X3 X6 X5 J NTC<br>X8<br>T2 T6 T10<br>T4 G4 E4 D3 G2 D2 T8 G8 E8 D7 G6 D6 T12G12 E12 D11 G10 D10<br>E2 E6<br>N1<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2023-12-12 17 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Package outlines** **==> picture [541 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Package outlines<br>26,5<br>21,25 21,25<br>G3 E3 E1 G1 G7 E7 G5 E5 G9 E9 E11<br>16<br>12,8 G11<br>P1 P1<br>9,6<br>X8 X7<br>6,4<br>Y 3,2 X1 X3 X5<br>X<br>0 0<br>X2 X4 X6<br>6,4<br>4x ( n 2,3) E2 N1 E6<br>12,8<br>j n 0,4 A<br>16<br>G4 E4 G2 G8 E8 N1 G6G10 E12 G12<br>21,25 B 21,25<br>26,5<br>56,7 ` 0,3<br>A j 0,7CZ A<br>j 1 A<br>(47,5)<br>Restricted area for Thermal Interface Material<br>25,5 0 25,5 25,5 24 20,8 17,6 14,4 11,2 8 4,8 1,6 0 1,6 4,8 8 11,2 14,4 17,6 20,8 24 25,5<br>0,3<br> `<br>48<br>12<br>16,4<br>(33)<br>W00215113.05<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2023-12-12 18 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Module label code** ## **10 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2023-12-12 19 **FS3L40R12W2H7P_B11 EasyPACK[™] 2B module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2023-01-26|Initial version| |1.00|2023-12-12|Final datasheet| Datasheet Revision 1.00 2023-12-12 20 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-12-12 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABF403-002** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
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