FS3L200R10W3S7FB94BPSA1

IGBT Module, Three level Inverter, 70 A, 1.33 V, 150 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
SVHC: No SVHC (25-Jun-2025)
Product Range: EasyPACK Series
IGBT Technology: IGBT7 [Trench Stop]
IGBT Termination: Press Fit
Power Dissipation: -
IGBT Configuration: Three level Inverter
Transistor Mounting: Panel
DC Collector Current: 70A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 70A
Collector Emitter Voltage Max: 950V
Collector Emitter Voltage V(br)ceo: 950V
Collector Emitter Saturation Voltage: 1.33V
Collector Emitter Saturation Voltage Vce(on): 1.33V

Delivery and price
Units per pack	1
Price	122.06 €
Current stock	10+
Lead time	30 days

Datasheet

**FS3L200R10W3S7F_B94 EasyPACK[™] module** _ 

## **EasyPACK[™] module with TRENCHSTOP[™] IGBT7 and CoolSiC[™] Schottky diode and PressFIT / NTC** 

## **Features** 

- Electrical features 

- VCES = 950 V 

- IC nom = 100 A / ICRM = 200 A 

- CoolSiC[TM] Schottky diode gen 5 

- Low switching losses 

- TRENCHSTOP[TM] IGBT7 

- Mechanical features 

- Al2O3 substrate with low thermal resistance 

- Compact design 

- Integrated NTC temperature sensor 

- PressFIT contact technology 

## **Potential applications** 

- UPS systems 

- Three-level applications 

- Solar applications 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 

## **Description** 

Please read the sections "Important notice" and "Warnings" at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2022-02-16 

**FS3L200R10W3S7F_B94 EasyPACK[™] module** 

**Table of contents** 

**==> picture [105 x 47] intentionally omitted <==**

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT, Boost**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**3**|**Diode, Boost**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5|
|**4**|**Bypass-diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**5**|**Inverse-polarity protection diode A**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7|
|**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14|
|**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|



Datasheet 

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## **1 Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|
|---|---|---|---|---|
|**Table 1**<br>**Insulation coordination**|||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**|
|Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.2|kV|
|Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3||
|Creepage distance|_d_Creep|terminal to heatsink|11.2|mm|
|Creepage distance|_d_Creep|terminal to terminal|6.8|mm|
|Clearance|_d_Clear|terminal to heatsink|9.4|mm|
|Clearance|_d_Clear|terminal to terminal|5.5|mm|
|Comparative tracking<br>index|_CTI_||>400||
|Relative thermal index<br>(electrical)|_RTI_|housing|140|°C|



|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Stray inductance module|_L_sCE||||22||nH|
|Storage temperature|_T_stg|||-40||125|°C|
|Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm|
|Weight|_G_||||78||g|



_Note: The current under continuous operation is limited to 25A rms per connector pin._ 

## **2 IGBT, Boost** 

**Table 3 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V|
|Implemented collector<br>current|_I_CN|||100|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|70|A|
|Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||200|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



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## **2 IGBT, Boost** 

|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 30 A,_V_GE= 15 V|_T_vj= 25 °C||1.33|1.53|V|
||||_T_vj= 125 °C||1.39|||
||||_T_vj= 150 °C||1.40|||
|Gate threshold voltage|_V_GEth|_I_C= 1.67 mA, VCE= VGE,_T_vj= 25 °C||4.35|5.10|5.85|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||0.23||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.5||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||6.48||nF|
|Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.02||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.031|mA|
|Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 30 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 10 Ω|_T_vj= 25 °C||0.060||µs|
||||_T_vj= 125 °C||0.060|||
||||_T_vj= 150 °C||0.060|||
|Rise time (inductive load)|_t_r|_I_C= 30 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 10 Ω|_T_vj= 25 °C||0.020||µs|
||||_T_vj= 125 °C||0.020|||
||||_T_vj= 150 °C||0.020|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 30 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 10 Ω|_T_vj= 25 °C||0.180||µs|
||||_T_vj= 125 °C||0.220|||
||||_T_vj= 150 °C||0.240|||
|Fall time (inductive load)|_t_f|_I_C= 30 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 10 Ω|_T_vj= 25 °C||0.080||µs|
||||_T_vj= 125 °C||0.120|||
||||_T_vj= 150 °C||0.130|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 30 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 10 Ω, di/dt = 1900<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.525||mJ|
||||_T_vj= 125 °C||0.557|||
||||_T_vj= 150 °C||0.567|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 30 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 10 Ω, dv/dt = 3500<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.72||mJ|
||||_T_vj= 125 °C||1.21|||
||||_T_vj= 150 °C||1.37|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m*K)|||0.667||K/W|



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## **3 Diode, Boost** 

|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Temperature under<br>switching conditions|_T_vj op||-40||150|°C|



## **3 Diode, Boost** 

|**3**<br>**Diode, Boost**|**3**<br>**Diode, Boost**|**3**<br>**Diode, Boost**||||
|---|---|---|---|---|---|
|**Table 5**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V|
|Implemented forward<br>current|_I_FN|||40|A|
|Continuous DC forward<br>current|_I_F|||30|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||80|A|
|I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|200|A²s|
||||_T_vj= 150 °C|111||



## **Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 6**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 30 A,_V_GE= 0 V|_T_vj= 25 °C||1.29|1.63|V|
||||_T_vj= 125 °C||1.49|||
||||_T_vj= 150 °C||1.61|||
|Peak reverse recovery<br>current|_I_RM|_I_F= 30 A,_V_R= 500 V,<br>-diF/dt = 1900 A/µs<br>(Tvj= 150 °C)|_T_vj= 25 °C||16.4||A|
||||_T_vj= 125 °C||16.4|||
||||_T_vj= 150 °C||16.4|||
|Recovered charge|_Q_r|_I_F= 30 A,_V_R= 500 V,<br>-diF/dt = 1900 A/µs<br>(Tvj= 150 °C)|_T_vj= 25 °C||0.74||µC|
||||_T_vj= 125 °C||0.74|||
||||_T_vj= 150 °C||0.74|||
|Reverse recovery energy|_E_rec|_I_F= 30 A,_V_R= 500 V,<br>-diF/dt = 1900 A/µs<br>(Tvj= 150 °C)|_T_vj= 25 °C||0.249||mJ|
||||_T_vj= 125 °C||0.249|||
||||_T_vj= 150 °C||0.249|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.979||K/W|



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## **4 Bypass-diode** 

|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Temperature under<br>switching conditions|_T_vj op||-40||150|°C|



## **4 Bypass-diode** 

|**4**<br>**Bypass-diode**|**4**<br>**Bypass-diode**|**4**<br>**Bypass-diode**||||
|---|---|---|---|---|---|
|**Table 7**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C||1200|V|
|Maximum RMS forward<br>current per chip|_I_FRMSM|_T_H= 95 °C||50|A|
|Maximum RMS current at<br>rectifier output|_I_RMSM|_T_H= 95 °C||50|A|
|Surge forward current|_I_FSM|_t_P= 10 ms|_T_vj= 25 °C|1070|A|
||||_T_vj= 110 °C|957||
|I2t - value|_I_2_t_|_t_P= 10 ms|_T_vj= 25 °C|5770|A²s|
||||_T_vj= 110 °C|4580||



**Table 8 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 45 A|_T_vj= 110 °C||0.88||V|
|Reverse current|_I_r|_T_vj= 150 °C,_V_R= 1200 V|||1||mA|
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.549||K/W|
|Temperature under<br>switching conditions|_T_vj, op|||-40||110|°C|



## **5 Inverse-polarity protection diode A** 

**Table 9 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|
|Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C|1200|V|
|Maximum RMS forward<br>current per chip|_I_FRMSM|_T_H= 95 °C|50|A|



**(table continues...)** 

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## **6 NTC-Thermistor** 

|**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Maximum RMS current at<br>rectifier output|_I_RMSM|_T_H= 95 °C||50|A|
|Surge forward current|_I_FSM|_t_P= 10 ms|_T_vj= 125 °C|395|A|
||||_T_vj= 150 °C|378||
|I2t - value|_I_2_t_|_t_P= 10 ms|_T_vj= 125 °C|780|A²s|
||||_T_vj= 150 °C|714||



|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 30 A|_T_vj= 150 °C||0.88||V|
|Reverse current|_I_r|_T_vj= 150 °C,_V_R= 1200 V|||0.1||mA|
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.934||K/W|
|Temperature under<br>switching conditions|_T_vj, op|||-40||150|°C|



## **6 NTC-Thermistor** 

**Table 11 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ|
|Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%|
|Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW|
|B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K|
|B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K|
|B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K|



_Note: Specification according to the valid application note._ 

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## **7 Characteristics diagrams** 

## **7 Characteristics diagrams** 

**Output characteristic (typical), IGBT, Boost** IC = f(VCE) VGE = 15 V 

**Output characteristic field (typical), IGBT, Boost** IC = f(VCE) T = 150 °C vj 

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**----- Start of picture text -----**<br>
60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5<br>Transfer characteristic (typical), IGBT, Boost Switching losses (typical), IGBT, Boost<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 10 Ω, RGon = 10 Ω, VCE = 500 V, VGE = ± 15 V<br>60 2.5<br>50<br>2.0<br>40<br>1.5<br>30<br>1.0<br>20<br>0.5<br>10<br>0 0.0<br>4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50 55 60<br>**----- End of picture text -----**<br>


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**7 Characteristics diagrams** 

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## **Switching losses (typical), IGBT, Boost** 

## E = f(RG) 

## IC = 30 A, VCE = 500 V, VGE = ± 15 V 

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3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


## **Switching times (typical), IGBT, Boost** 

## t = f(RG) 

## **Switching times (typical), IGBT, Boost** 

## t = f(IC) 

RGoff = 10 Ω, RGon = 10 Ω, VCE = 500 V, VGE = ± 15 V, Tvj = 150 °C 

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**Transient thermal impedance , IGBT, Boost** Zth = f(t) 

IC = 30 A, VCE = 500 V, VGE = ± 15 V, Tvj = 150 °C 

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**7 Characteristics diagrams** 

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## **Reverse bias safe operating area (RBSOA), IGBT, Boost** 

IC = f(VCE) 

RGoff = 10 Ω, VGE = ±15.0 V, Tvj = 150 °C 

**Capacity characteristic (typical), IGBT, Boost** C = f(VCE) 

f = 100 kHz, VGE = 0 V, Tvj = 25 °C 

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240 100<br>220<br>200<br>180 10<br>160<br>140<br>120 1<br>100<br>80<br>60 0.1<br>40<br>20<br>0 0.01<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>Gate charge characteristic (typical), IGBT, Boost Forward characteristic (typical), Diode, Boost<br>VGE = f(QG) IF = f(VF)<br>IC = 100 A, Tvj = 25 °C<br>15 60<br>10 50<br>5 40<br>0 30<br>-5 20<br>-10 10<br>-15 0<br>0.00 0.05 0.10 0.15 0.20 0.25 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br>


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## **7 Characteristics diagrams** 

## **Switching losses (typical), Diode, Boost** 

Erec = f(IF) 

RGon = 10 Ω, VCE = 500 V 

**Switching losses (typical), Diode, Boost** Erec = f(RG) VCE = 500 V, IF = 30 A 

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**----- Start of picture text -----**<br>
0.50 0.50<br>0.45 0.45<br>0.40 0.40<br>0.35 0.35<br>0.30 0.30<br>0.25 0.25<br>0.20 0.20<br>0.15 0.15<br>0.10 0.10<br>0.05 0.05<br>0.00 0.00<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 80 90 100<br>Transient thermal impedance, Diode, Boost Forward characteristic (typical), Bypass-diode<br>Zth = f(t) IF = f(VF)<br>10 90<br>75<br>1 60<br>45<br>0.1 30<br>15<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>**----- End of picture text -----**<br>


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**7 Characteristics diagrams** 

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## **Transient thermal impedance, Bypass-diode** 

Zth = f(t) 

## **Forward characteristic (typical), Inverse-polarity protection diode A** 

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IF = f(VF)<br>**----- End of picture text -----**<br>


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10<br>1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


**Transient thermal impedance, Inverse-polarity protection diode A** Zth = f(t) 

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10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


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60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>**----- End of picture text -----**<br>


**Temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) 

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100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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## **8 Circuit diagram** 

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8 Circuit diagram<br>**----- End of picture text -----**<br>


**Figure 1** 

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**FS3L200R10W3S7F_B94 EasyPACK[™] module** 

## **9 Package outlines** 

## **9 Package outlines** 

**==> picture [504 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
dimensioned for EJOT Delta PT WN5451 25<br>choose length according to pcb thickness<br>B 4x 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>\\ U (IT I g g<br>26<br>DC1+ DC1N DC1- DC2- DC2N DC2+<br>24<br>oO 14 eP iQ Se} pee0()s000100000000000||loooo @000| | 008(_Cj o c@e00K0Kee|o0e 00000000 | ||| 12|e oa = 14,4 co 17,611,2 CH / QD po _o + PVA+ t a.7 f 22 t 4 GE { AA22 aef 25 al aaeneenI | +?5 EC i a 2 B f STC-GC t 2 2 f See ot PVC+ |r o \\\<br>8<br>“oF 0 a 9 ge00000000 sec0 o j p900Qo0000000900 9 i“ e Sj 4,8 C}—4§ esireg BSTA- a iy fri Lt1 | | ; 8<br>D ———— 2 | C= | O 0 Nee BSTA+ ttt ft li ann |<br>14 A ||loooc00ee0ed |  poo00000000||| |. 5 11,2 C 4,88 S E eee GEA1A1 NTC1 cp PVC- ppt EC1 GC1 ppt<br>8 \ i] EB1 GB1 NTC2 Ibo d itd ! | /<br>( 100000000000 ; (00000000000 N) la CH 1 rT re e | biti i | /<br>26 20,8 BSTB- GB2<br>\ 100000000008 | (e0000000008 is 24 P A TT] Pt i i i | /<br>PVB+ BSTB+ PVA- PVB- EB2 BSTC+ \<br>Ou 109,9 0,45 AO} C |<br>WU ULE Qe<br>C] A<br>Sg<br>TIT 7 T\_1/7_I<br>recommended design hight TUG DOVER UTPUTRTthCit<br>,2)<br>4)<br>BC<br>A<br>0,25<br>2x<br>0,1 2x<br>12<br>5,4<br>2x  according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>36,08 32,88 29,68 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 29,68 32,88 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>


## **Figure 2** 

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## **10 Module label code** 

## **10 Module label code** 

|**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**|
|---|---|---|---|---|
|Code format|Data Matrix||Barcode Code128||
|Encoding|ASCII text||Code Set A||
|Symbol size|16x16||23 digits||
|Standard|IEC24720 and IEC16022||IEC8859-1||
||||||
|Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530<br>71549142846550549911530||||



## **Figure 3** 

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**Revision history** 

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## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|0.10|2020-12-15||
|1.00|2022-02-16|Final datasheet|



Datasheet 

Revision 1.00 2022-02-16 

16 

## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2022-02-16 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

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## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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