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FS3L200R10W3S7FB11BPSA1
IGBT Module, Three level Inverter, 70 A, 1.27 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK TRENCHSTOP
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- DC Collector Current: 70A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 70A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Voltage V(br)ceo: 950V
- Collector Emitter Saturation Voltage: 1.27V
- Collector Emitter Saturation Voltage Vce(on): 1.27V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 88.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FS3L200R10W3S7F_B11
VCES = 950V
IC nom = 100A / ICRM = 200A
- 3-Level-Applikationen
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- USV-Systeme
- CoolSiC[TM]
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- Trenchstop[TM]
- Al2O3 Substrat mit kleinem thermischen Widerstand
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-
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- 3-level-applications
-
-
- CoolSiC[TM]
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- Trenchstop[TM]
- Al2O3
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-
-
**Digit**
Datasheet www.infineon.com
2020-05-08
FS3L200R10W3S7F_B11
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|**IGBT,Hochsetzsteller/IGBT,Boost**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Hochsetzsteller/IGBT,Boost**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|100|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|70|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|200|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,27<br>1,33<br>1,33|1,55|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 1,67 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,23||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||6,48||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,02||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,031|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,074<br>0,071<br>0,062||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,013<br>0,015<br>0,015||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,178<br>0,275<br>0,308||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,107<br>0,139<br>0,161||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 880 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,575<br>0,589<br>0,596||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||1,05<br>1,62<br>1,79||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||300||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,673||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
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## **Diode,�Hochsetzsteller�/�Diode,�Boost Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|30|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|88,4<br>66,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,32<br>1,55<br>1,70|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 880 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||16,4<br>16,4<br>16,4||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 880 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,74<br>0,74<br>0,74||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 880 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,249<br>0,249<br>0,249||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,894||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Bypass-Diode�/�Bypass-Diode Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 75°C|IFRMSM|<br>50|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 75°C|IRMSM|50|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 110°C|IFSM|1070<br>957|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 110°C|I²t|5770<br>4580|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 45 A|VF||0,85||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1200 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,870||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||110|°C|
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## **Verpolschutz�Diode�A�/�Inverse-polarity�protection�diode�A Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 70°C|IFRMSM|<br>30|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 70°C|IRMSM|30|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 110°C|IFSM|378<br>326|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 110°C|I²t|714<br>531|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 15 A|VF||0,89||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1200 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,31||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||110|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,2<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,2<br>6,8<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||9,4<br>5,5<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|Schraube-Montagegem.gültigerApplikationsschrift<br>Screw-Mountingaccordingtovalidapplicationnote|M|1,30||1,50|Nm|
|Gewicht<br>Weight||G||78||g|
IGBT- and diode- RthJH parameters measured with thermal grease of λ Paste = 3.3 W/(m·K) The current under continuous operation is limited to 25 A rms per connector pin.
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## **Ausgangskennlinie�IGBT,�Hochsetzsteller�(typisch) output�characteristic�IGBT,�Boost�(typical)**
IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,�Hochsetzsteller�(typisch) output�characteristic�IGBT,�Boost�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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**----- Start of picture text -----**<br>
50 50<br>Tvj = 25 ° C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>45 T vj = 150°C 45 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>40 40 V GE = 9V<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 0,5 1,0 1,5 2,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,�Hochsetzsteller�(typisch) transfer�characteristic�IGBT,�Boost�(typical)** IC�=�f�(VGE) VCE�=�20�V
## **Schaltverluste�IGBT,�Hochsetzsteller�(typisch) switching�losses�IGBT,�Boost�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�10� Ω ,�RGoff�=�10� Ω ,�VCE�=�500�V
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**----- Start of picture text -----**<br>
50 3<br>Tvj = 25 ° C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>45 T vj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>40<br>35<br>2<br>30<br>25<br>20<br>1<br>15<br>10<br>5<br>0 0<br>4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =415V,V CE =500V,I C =25A VGE =415V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =500V,T vj =150°C<br>3 10<br>a —————<br>Eon, Tvj = 125°C | tdon a<br>Eoff, Tvj = 125°C | t r ==<br>Eon, Tvj = 150°C t doff<br>= Eoff, Tvj = 150°C t f a a<br>vy,YO<br>7vf,<br>7 1<br>2 ; Z gyVa 7(ia aa<br>G<br>0,1<br>a a a<br>a<br>1 | ——<br>0,01 —<br>a a<br>eeee ee ee ee<br>0 0,001<br>0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT, Hochsetzsteller (typisch) Transienter Warmewiderstand IGBT, Hochsetzsteller<br>switching times IGBT, Boost (typical) transient thermal impedance IGBT, Boost<br>tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =415V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =500V,!I C =25A,T vj =<br>150°C<br>10 aooo t a don a 1 Reea eee ZthJH : IGBT SS Soee<br>i|| tt rdoff aaa H—(|pT AeT<br>t f<br>1 0,1<br>esa a Pttt te<br>aa ee AerPZTee en<br>0,1 a a ie 0,01 Ptet<br>| > |<br>a=<br>7<br>i: 1 2 3 4<br>ri[K/W]: 0,026 0,084 0,282 0,281<br>τ i[s]: 0,0006 0,0105 0,11 0,11<br>Pt7 tT | tT PY<br>0,01 0,001<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>E [mJ] t [µs]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
Datasheet
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## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,�Hochsetzsteller (RBSOA) reverse�bias�safe�operating�area�IGBT,�Boost�(RBSOA)** IC�=�f�(VCE)
**Durchlasskennlinie�der�Diode,�Hochsetzsteller�(typisch) forward�characteristic�of�Diode,�Boost�(typical)** IF�=�f�(VF)
**==> picture [486 x 291] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGE�=�±15�V,�RGoff�=�10� Ω ,�Tvj�=�150°C<br>240 50<br>IC, Modul Tvj = 25 ° C<br>220 IC, Chip Tvj = 125°C<br>45 T vj = 150°C<br>200<br>40<br>180<br>35<br>160<br>30<br>140<br>120 25<br>100<br>20<br>80<br>15<br>60<br>10<br>40<br>5<br>20<br>0 0<br>0 100 200 300 400 500 600 700 800 900 1000 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
**Schaltverluste�Diode,�Hochsetzsteller�(typisch) switching�losses�Diode,�Boost�(typical)** Erec�=�f�(IF) RGon�=�10� Ω ,�VCE�=�600�V
**Schaltverluste�Diode,�Hochsetzsteller�(typisch) switching�losses�Diode,�Boost�(typical)** Erec�=�f�(RG) IF�=�25�A,�VCE�=�600�V
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**----- Start of picture text -----**<br>
0,50 0,50<br>Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C Erec, Tvj = 125 ° C; Erec, Tvj = 150 ° C<br>0,45 0,45<br>0,40 0,40<br>0,35 0,35<br>0,30 0,30<br>0,25 0,25<br>0,20 0,20<br>0,15 0,15<br>0,10 0,10<br>0,05 0,05<br>0,00 0,00<br>0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH =f (t) IF =f(V F)<br>10 90<br>ee ZthJH : Diode tt T vj = 25°C i<br>Tvj = 110°C°<br>eesnooo 80 Tvj = 150 C i]fi<br>a 70 |<br>| iJ<br>!<br>1 60<br>eePt er ee ! /i<br>PTPt TTTTee TT 50 i] / /<br>iY ‘|1]<br>0,1 So(| 4030 i/<br>/<br>etSei eiteatscl 20 OP / !<br>i: 1 2 3 4 /f<br>ri[K/W]: 0,047 0,116 0,217 0,514 10<br>τ i[s]: 0,0004 0,0033 0,0213 0,121<br>0,01 Wi ET 0 Ze<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
ZthJH<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(typical)<br>IF =f(V F)<br>**----- End of picture text -----**<br>
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10 30<br>PoPtfeeee TTTT ZthJH: Diode TPT| eePTre T T Tvj vj vj = 25°C = 110 = 150°C° C I il 1 |<br>25<br>i|<br>i<br>|<br>1 a 20 i<br>Pt tt er ed il<br>HH HH HHH ! |<br>oe i<br>I<br>15 i<br>il<br>il<br>0,1 10<br>ee fail |i]{J<br>|<br>5<br>i: 1 2 3 4<br>ri[K/W]: 0,048 0,108 0,354 0,36 It<br>PLE τ i[s]: 0,0018 0,0163 0,0869 0,238 /<br>Ly<br>0,01 Wi [ET] 0 / /<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
9
Datasheet
2020-05-08
FS3L200R10W3S7F_B11
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ZthJH =F ()<br>10 100000<br>ST ee<br>ZthJH: Diode Rtyp<br>Se el<br>Sei ae ee eee a<br>PI ei ett ett no<br>TUITE ETT ETT Pot |<br>out su i<br>1 ek 10000<br>ee 2 [_<br>cH= TT ee [a] ee ee<br>0,1 1000<br>FT ee<br>i: 1 2 3 4<br>ri[K/W]: 0,113 0,308 0,449 0,44<br>τ i[s]: 0,0016 0,0135 0,0861 0,0861<br>0,01 UUTETLT 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
10
Datasheet
2020-05-08
## FS3L200R10W3S7F_B11
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dimensioned for EJOT Delta PT WN5451 25<br>choose length according to pcb thickness<br>B 4x 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>A (e111) rT g<br>26<br>DC1+ DC1N DC1- DC2- DC2N DC2+<br>24<br>14 17,6 EC2 GC2<br>| KSLY peso()soce||loooo @@00| | pooe([0000 )o000e000||| S—\ =oS 14,411,2 eeH ee r PVA+ oereeee GEAA22 e a rere etreter tt BSTC- it pe PVC+ t!| \| 3<br>8<br>al 0 an \ ||}0@@®00000000) | 00000000000)}|| / ia 4,8 a BSTA- o ol} i it itd | /<br>os DY; am a | |e n] ——————— 0o} 7 io jo ————V F oy H qt oy 0 _ \ o BSTA+ e rity iit fal pa da td mi tat 1 ||<br>14 | r a 100000008080) | (00000000000 e] = GE 11,24,88 EB1GEA1A1GB1 yt NTC2NTC1 PVC- } ee EC1 GC1 *<br>26 Il09000000000 1®000000000 In [el 20,824 \ ; ot TT] ; ty BSTB- i i t GB2 i /<br>PVB+ BSTB+ PVA- PVB- EB2 BSTC+<br>i 109,9 | 0,45 MO} C ee eei \ ee,|<br>LOU C0000 Oo on<br>CL] A<br>| -WoTTT<br>IN T/L<br>} recommended design hight TeTTaii<br>,2)<br>4)<br>ABC<br>0,25<br>2x<br>0,1 2x<br>12<br>5,4 2x according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>36,08 32,88 29,68 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 29,68 32,88 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>
11
Datasheet
2020-05-08
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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