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FS3L100R07W3S5B11BPSA1
IGBT Module, Three level Inverter, 100 A, 1.17 V, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: Trench Stop 5
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- DC Collector Current: 100A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.17V
- Collector Emitter Saturation Voltage Vce(on): 1.17V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 63.65 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **FS3L100R07W3S5_B11 EasyPACK[™] module** _ ## **EasyPACK[™] module with TRENCHSTOP[™] 5 and Emitter Controlled 3 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Low switching losses - Mechanical features - Al2O3 substrate with low thermal resistance - Integrated NTC temperature sensor - PressFIT contact technology ## **Potential applications** - Solar applications - 3-level-applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [5 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT,3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Diode, 3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| |**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| |**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20| Datasheet 2 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.0|kV| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|9.6|mm| |Creepage distance|_d_Creep|terminal to terminal|6.8|mm| |Clearance|_d_Clear|terminal to heatsink|9.4|mm| |Clearance|_d_Clear|terminal to terminal|5.5|mm| |Comparative tracking index|_CTI_||> 400|| |RTI Elec.|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||28||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch|||1.6||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||78||g| _Note: The current under continuous operation is limited to 25 A rms per connector pin._ ## **2 IGBT,3-Level** |**2**<br>**IGBT,3-Level**|**2**<br>**IGBT,3-Level**|**2**<br>**IGBT,3-Level**|**2**<br>**IGBT,3-Level**|**2**<br>**IGBT,3-Level**|**2**<br>**IGBT,3-Level**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||100|A| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|70|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||200|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet 3 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT,3-Level** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||1.17|1.38|V| ||||_T_vj= 125 °C||1.20||| ||||_T_vj= 150 °C||1.21||| |Gate threshold voltage|_V_GEth|_I_C= 1 mA, VCE= VGE,_T_vj= 25 °C||3.25|4|4.75|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||0.42||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||7.1||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.025||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.007|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.026||µs| ||||_T_vj= 125 °C||0.028||| ||||_T_vj= 150 °C||0.028||| |Rise time (inductive load)|_t_r|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.011||µs| ||||_T_vj= 125 °C||0.012||| ||||_T_vj= 150 °C||0.012||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.140||µs| ||||_T_vj= 125 °C||0.170||| ||||_T_vj= 150 °C||0.180||| |Fall time (inductive load)|_t_f|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.020||µs| ||||_T_vj= 125 °C||0.050||| ||||_T_vj= 150 °C||0.050||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 8.2 Ω, di/dt =<br>2900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.45||mJ| ||||_T_vj= 125 °C||0.66||| ||||_T_vj= 150 °C||0.72||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 8.2 Ω, dv/dt =<br>4500 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.65||mJ| ||||_T_vj= 125 °C||0.92||| ||||_T_vj= 150 °C||1.02||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 360 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 0 µs,<br>_T_vj= 150 °C||800||A| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT|||0.886||K/W| Datasheet 1.00 4 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, Inverter** |**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 IGBT, Inverter** |**3**<br>**IGBT, Inverter**|**3**<br>**IGBT, Inverter**|**3**<br>**IGBT, Inverter**|**3**<br>**IGBT, Inverter**|**3**<br>**IGBT, Inverter**|**3**<br>**IGBT, Inverter**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||75|A| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|75|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||150|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||0.99|1.43|V| ||||_T_vj= 125 °C||0.94||| ||||_T_vj= 150 °C||0.91||| |Gate threshold voltage|_V_GEth|_I_C= 1 mA, VCE= 20 V,_T_vj=|25 °C|4.25|5|5.75|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||0.92||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||11.8||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.042||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.007|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.053||µs| ||||_T_vj= 125 °C||0.049||| ||||_T_vj= 150 °C||0.048||| Datasheet 1.00 5 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, 3-Level** |**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Rise time (inductive load)|_t_r|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.017||µs| ||||_T_vj= 125 °C||0.018||| ||||_T_vj= 150 °C||0.019||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.330||µs| ||||_T_vj= 125 °C||0.370||| ||||_T_vj= 150 °C||0.380||| |Fall time (inductive load)|_t_f|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.130||µs| ||||_T_vj= 125 °C||0.210||| ||||_T_vj= 150 °C||0.240||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 8.2 Ω, di/dt =<br>2400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.29||mJ| ||||_T_vj= 125 °C||0.34||| ||||_T_vj= 150 °C||0.36||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 8.2 Ω, dv/dt =<br>1600 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.48||mJ| ||||_T_vj= 125 °C||3.45||| ||||_T_vj= 150 °C||3.69||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 360 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 0 µs,_T_vj≤<br>150 °C||900||A| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT|||0.902||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, 3-Level** |**4**<br>**Diode, 3-Level**|**4**<br>**Diode, 3-Level**|**4**<br>**Diode, 3-Level**|**4**<br>**Diode, 3-Level**|**4**<br>**Diode, 3-Level**|**4**<br>**Diode, 3-Level**| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||75|A| |Continous DC forward<br>current|_I_F|||40|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||150|A| Datasheet 6 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, Inverter** |**Table 7**<br>**Maximum rated values (continued)**|**Table 7**<br>**Maximum rated values (continued)**|**Table 7**<br>**Maximum rated values (continued)**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|370|A²s| ||||_T_vj= 150 °C|360|| |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 40 A,_V_GE= 0 V|_T_vj= 25 °C||1.30|1.64|V| ||||_T_vj= 125 °C||1.20||| ||||_T_vj= 150 °C||1.15||| |Peak reverse recovery<br>current|_I_RM|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||47||A| ||||_T_vj= 125 °C||60||| ||||_T_vj= 150 °C||66||| |Recovered charge|_Q_r|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.13||µC| ||||_T_vj= 125 °C||4.18||| ||||_T_vj= 150 °C||4.9||| |Reverse recovery energy|_E_rec|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2900 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.55||mJ| ||||_T_vj= 125 °C||1.04||| ||||_T_vj= 150 °C||1.23||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode|||1.21||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **5 Diode, Inverter** |**5**<br>**Diode, Inverter**|**5**<br>**Diode, Inverter**|**5**<br>**Diode, Inverter**|**5**<br>**Diode, Inverter**|**5**<br>**Diode, Inverter**|**5**<br>**Diode, Inverter**| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||75|A| |Continous DC forward<br>current|_I_F|||40|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||150|A| Datasheet 1.00 7 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 NTC-Thermistor** |**Table 9**<br>**Maximum rated values (continued)**|**Table 9**<br>**Maximum rated values (continued)**|**Table 9**<br>**Maximum rated values (continued)**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|370|A²s| ||||_T_vj= 150 °C|360|| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 40 A,_V_GE= 0 V|_T_vj= 25 °C||1.30|1.64|V| ||||_T_vj= 125 °C||1.20||| ||||_T_vj= 150 °C||1.15||| |Peak reverse recovery<br>current|_I_RM|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||42||A| ||||_T_vj= 125 °C||55||| ||||_T_vj= 150 °C||59||| |Recovered charge|_Q_r|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.73||µC| ||||_T_vj= 125 °C||4.11||| ||||_T_vj= 150 °C||4.47||| |Reverse recovery energy|_E_rec|_I_F= 40 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.21||mJ| ||||_T_vj= 125 °C||1.03||| ||||_T_vj= 150 °C||1.18||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode|||1.04||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 NTC-Thermistor** |**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 11**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 8 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **7 Characteristics diagrams** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **output characteristic (typical), IGBT,3-Level** IC = f(VCE) VGE = 15 V **output characteristic (typical), IGBT,3-Level** IC = f(VCE) T = 150 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>transfer characteristic (typical), IGBT,3-Level switching losses (typical), IGBT,3-Level<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 100 2.0<br>90 1.8<br>80 1.6<br>70 1.4<br>60 1.2<br>50 1.0<br>40 0.8<br>30 0.6<br>20 0.4<br>10 0.2<br>0 0.0<br>4.0 4.5 5.0 5.5 6.0 6.5 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet 9 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **switching losses (typical), IGBT,3-Level** **switching times (typical), IGBT,3-Level** t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C ## E = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8 10<br>2.6<br>2.4<br>2.2<br>1<br>2.0<br>1.8<br>1.6<br>1.4 0.1<br>1.2<br>1.0<br>0.8<br>0.01<br>0.6<br>0.4<br>0.2<br>0.0 0.001<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 100<br>switching times (typical), IGBT,3-Level transient thermal impedance , IGBT,3-Level<br>t = f(RG) Zth = f(t)<br>IC = 50 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>1<br>1<br>0.1<br>0.1<br>0.01<br>0.001 0.01<br>0 10 20 30 40 50 60 70 80 90 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 10 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **reverse bias safe operating area (RBSOA), IGBT,3-Level** IC = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT,3-Level** VGE = f(QG) IC = 50 A, Tvj = 25 °C ## **capacity characteristic (typical), IGBT,3-Level** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>10<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 15 100<br>90<br>10<br>80<br>70<br>5<br>60<br>0 50<br>40<br>-5<br>30<br>20<br>-10<br>10<br>-15 0<br>0.00 0.10 0.20 0.30 0.40 0.50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-04-22 11 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **output characteristic (typical), IGBT, Inverter** ## **transfer characteristic (typical), IGBT, Inverter** IC = f(VCE) IC = f(VGE) VCE = 20 V T = 150 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>switching losses (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>E = f(IC) E = f(RG)<br>RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V IC = 50 A, VCE = 300 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0 6.0<br>5.5 5.5<br>5.0 5.0<br>4.5 4.5<br>4.0 4.0<br>3.5 3.5<br>3.0 3.0<br>2.5 2.5<br>2.0 2.0<br>1.5 1.5<br>1.0 1.0<br>0.5 0.5<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet 12 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **switching times (typical), IGBT, Inverter** ## t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0.001<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **transient thermal impedance , IGBT, Inverter** Zth = f(t) ## **switching times (typical), IGBT, Inverter** ## t = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> ## **reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> Datasheet 13 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **capacity characteristic (typical), IGBT, Inverter gate charge characteristic (typical), IGBT, Inverter** C = f(VCE) VGE = f(QG) f = 100 kHz, VGE = 0 V, Tvj = 25 °CGE = 0 V, Tvj = 25 °C = 0 V, Tvj = 25 °Cvj = 25 °C = 25 °C IC = 50 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °CGE = 0 V, Tvj = 25 °C = 0 V, Tvj = 25 °Cvj = 25 °C = 25 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>10<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0.0 0.2 0.4 0.6 0.8 1.0<br>**----- End of picture text -----**<br> **forward characteristic of (typical), Diode, 3-Level** IF = f(VF) **switching losses (typical), Diode, 3-Level** Erec = f(IF) RGon = 8.2 Ω, VCE = 300 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-04-22 14 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **switching losses (typical), Diode, 3-Level transient thermal impedance , Diode, 3-Level** Erec = f(RG) Zth = f(t) VCE = 300 V, IF = 40 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> **forward characteristic of (typical), Diode, Inverter** IF = f(VF) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.01 0.1 1 10<br>**----- End of picture text -----**<br> **switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 8.2 Ω, VCE = 300 V **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 80 2.0<br>1.8<br>70<br>1.6<br>60<br>1.4<br>50<br>1.2<br>40 1.0<br>0.8<br>30<br>0.6<br>20<br>0.4<br>10<br>0.2<br>0 0.0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-04-22 15 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **switching losses (typical), Diode, Inverter transient thermal impedance , Diode, Inverter** Erec = f(RG) Zth = f(t) VCE = 300 V, IF = 40 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet 16 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 8 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [448 x 282] intentionally omitted <==** **==> picture [25 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> **Figure 2** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Package outlines<br>**----- End of picture text -----**<br> **==> picture [527 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> dimensioned for EJOT Delta PT WN5451 25<br>B choose length according to pcb thickness 4x � � 0,25 A B C ( � 2,3) Dome � 3,5 4x pcb hole pattern<br>4x<br>26 P3 G32 G22 P2 P1 E12<br>24 T1<br>20,817,6 T2 E32 E22 G12<br>14 11,2 G13<br>4,81,68 G33 G23E23 E13<br>0 0<br>1,6 E33 E31 G21 E11<br>4,8 E21 G11<br>8 G31<br>14<br>20,817,6 G34E34 G24 G14<br>26 24<br>DC3- DC3N DC23+ DC2N1 DC2N2 E24 DC12- E14 DC1N DC1+<br>109,9 � 0,45<br>C<br>A<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill � 1,15mm<br>- Copper thickness in hole 25~50um<br>recommended design hight<br>( � 4,2)<br>( � 3,4)<br>0,25<br>�<br>�<br>BC<br>A<br>2x<br>0,1 2x � � 12<br>�<br>2x according to screw head washer<br>5,4<br>0,45<br> �<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>36,08 32,88 26,48 23,28 20,08 16,88 13,68 10,48 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 26,48 29,68 32,88 36,08<br>0,1<br>12,2 � (12) (16,4)<br>**----- End of picture text -----**<br> **Figure 3** Datasheet 1.00 2021-04-22 17 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Module label code** ## **10 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 18 1.00 2021-04-22 **FS3L100R07W3S5_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V1.0|2020-04-03|| |1.00|2021-04-22|Final| Datasheet 19 1.00 2021-04-22 ## 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Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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