![FS30R06VE3BOMA1 — IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module](/media/F/1/D/6ECD224ACEE60D1F.webp)
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FS30R06VE3BOMA1
IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:34A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:88W; Collector Emitte; Available until stocks are exhausted
- SVHC: No SVHC (27-Jun-2018)
- Product Range: EconoPACK
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 88W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 34A
- Power Dissipation Pd: 88W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 34A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 20.33 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules FS30R06VE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FS30R06VE3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:DPK<br>approvedby:RK<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 55°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>34<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>88,0<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,016<br>0,021<br>0,022<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,14<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,045<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>0,50<br>0,65<br>0,75<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>0,60<br>0,75<br>0,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,50<br>1,70<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,85<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 1 > IGBT-ModuleIGBT-modules FS30R06VE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,05|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||44,0<br>48,0<br>49,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,30<br>2,30<br>2,70||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,35<br>0,55<br>0,65||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||2,20|2,40|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||5,0<br>5,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||3,2<br>3,2|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 225||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||9,50||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|30|-|50|N| |Gewicht<br>Weight||G||10||g| |preparedby:DPK|dateofpublication:2013-10-03| |---|---| |approvedby:RK|revision:2.0| 2 IGBT-Module IGBT-modules ## FS30R06VE3 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>Tvj = 25°C VGE = 19 V<br>54 Tvj = 125°C 54 VGE = 17 V<br>i Tvj = 150°C 7 VGE = 15 V Lue<br>VGE = 13 V<br>48 eee 48 VGE = 11 V |<br>VGE = 9 V<br>P P e eee | FE acti ee tL<br>42 42<br>PP Aa<br>36 36<br>‘ /<br>30 30<br>PP yee ee<br>24 SRR Ae eee 24 eee<br>‘<br>18 18 —<br>eee) eee eee A e<br>[i<br>12 12<br>SREP see eee) [a] [e]<br>VY<br>6 6<br>BREE eee Ae<br>p ie<br>0 0<br>| TTT TT | UCL<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [485 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =300V<br>60 Ld a 2,0 SS<br>Tvj = 25°C Eon, Tvj = 125°C<br>54 Tvj = 125°C 1,8 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>FEL TS |<br>Eoff, Tvj = 150°C<br>TT ) | te Foy<br>48 1,6<br>42 1,4<br>pf | | | WeVe—) | EE nn i nmE<br>p t t Et A<br>36 1,2<br>i iw |} P| ee<br>eee<br>30 1,0<br>eee eee cee<br>eA eee, ae<br>24 0,8<br>18 0,6<br>ae Fd Ae eee Ze of ae<br>12 ee 0,4 fe<br>ee<br>6 0,2<br>ee<br>eZee eee<br>0 0,0<br>5 6 7 8 9 10 11 12 0 6 12 18 24 30 36 42 48 54 60<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 3 IGBT-Module IGBT-modules ## FS30R06VE3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+415V,1 C =30A,V CE =300V<br>4,0 es 10 a<br>| ee eee<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>3,5 | Eon, Tvj = 150°C T if fd | H—a S Oa E ee|<br>Eoff, Tvj = 150°C<br>ee a |<br>= J f} | | ee<br>3,0<br>| ot a a I<br>2,52,0 PCP T Yt er)PP)ee) 1 LITCOIMIEE Iac hT 7 oTTT<br>paoa aPE||Tea|<br>1,5 P| dey7 | | | fmsa4 |<br>1,0<br>ae AOcan ee| e e nteree PMLAA E ET i: 1 ETI 2 3 ET 4 T<br>0,5 ri[K/W]: 0,161 0,314 0,962 0,913<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =15 Ω ,T vj =150°C<br>66 60<br>IC, Modul Tvj = 25°C<br>60 I C , Chip 54 Tvj = 125°C<br>(es a re F Tvj = 150°C L ye<br>po<br>54<br>ji 48<br>48<br>42<br>42<br>[P] [g]<br>36<br>pj} [Hf] | Pet iyy<br>36<br>30<br>30<br>24<br>24<br>18<br>18<br>12<br>12<br>6 6<br>ee ee ee ee x<br>ee<br>0 0<br>ee ee eee<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 4 IGBT-Module IGBT-modules ## FS30R06VE3 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon Ns Ω ,V CE =300V IF = 30 V CE = 300 V<br>1,0 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 0,9 Erec, Tvj = 150°C<br>Ed). a<br>0,8 0,8<br>0,7<br>Ty) | f CATether BERRSERRE<br>0,6 0,6<br>va ENGR\ \<br>0,5<br>0,4 i,Ye 0,4 ERNSNI EE<br>0,3<br>CC Sea Scoeee<br>0,2 0,2<br>0,1<br>PTT [PoE] a<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 15 30 45 60 75 90 105 120 135 150<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter<br>transient thermal impedance Diode, Inverter<br>ZthJH =f (t)<br>10<br>Le<br>ZthJH : Diode<br>H— ccc<br>a|Foo<br>e l<br>| | el<br>PL TIN TE<br>I EP TE Ul<br>Onz i<br>1<br>EHa<br>Yt TiTTT<br>PT ATT<br>a<br>PALLPEP<br>LI TET ETI ETT<br>PPP FLUC i: 1 EEIE 2 3 EE 4 T<br>ri[K/W]: 0,256 0,554 1,141 1,099<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>CL boo l<br>0,1<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br> 5 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FS30R06VE3 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Vorläufige�Daten Preliminary�Data** **==> picture [235 x 139] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [371 x 452] intentionally omitted <==** prepared�by:�DPK date�of�publication:�2013-10-03 approved�by:�RK revision:�2.0 6 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FS30R06VE3 ## **Nutzungsbedingungen** ## application. 7
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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