![FS300R12OE4PNOSA1 — IGBT Module, Six Pack [Full Bridge], 300 A, 1.75 V, 150 °C, Module](/media/F/1/C/6EE81F4ACEEF0C1F.webp)
Image not available
Illustrative purposes only
FS300R12OE4PNOSA1
IGBT Module, Six Pack [Full Bridge], 300 A, 1.75 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (27-Jun-2018)
- Product Range: EconoPACK+
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: -
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 300A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 300A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 293.05 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT-Modul IGBT-Module ## FS300R12OE4P **==> picture [117 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 1200V<br>IC nom = 300A / ICRM = 600A<br>**----- End of picture text -----**<br> - Hochleistungsumrichter • - • Hybrid-Nutzfahrzeuge • • Motorantriebe • • Solar Anwendungen • • USV-Systeme • Elektrische Eigenschaften • Hohe Kurzschlussrobustheit • • Sehr grof&e Robustheit • • Trench IGBT 4 • • T yjop = 150°C • T • Hohe Stofstromfestigkeit • Mechanische Eigenschaften • Hohe mechanische Robustheit • • Integrierter NTC Temperatur Sensor • • PressFIT Verbindungstechnik • • RoHS konform • • Thermisches Interface Material bereits • aufgetragen **==> picture [23 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Digit<br>**----- End of picture text -----**<br> 1 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FS300R12OE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FS300R12OE4P<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:ZV<br>approvedby:KV<br>dateofpublication:2016-07-29<br>revision:V2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TH= 70°C, Tvj max= 175°C<br>IC nom<br>300<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>td on<br>0,19<br>0,21<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>td off<br>0,40<br>0,51<br>0,54<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>tf<br>0,06<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 5200 A/µs (Tvj= 150°C)<br>RGon= 0,75Ω<br>Eon<br>19,0<br>29,5<br>32,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 0,75Ω<br>Eoff<br>24,5<br>38,0<br>42,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink<br>proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial<br>RthJH<br>0,134 K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| |preparedby:ZV|dateofpublication:2016-07-29| |---|---| |approvedby:KV|revision:V2.0| 2 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FS300R12OE4P **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|17500<br>14500<br>|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||290<br>330<br>330||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||28,5<br>52,5<br>62,5||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||12,5<br>22,5<br>25,5||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,190|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�ZV date�of�publication:�2016-07-29 approved�by:�KV revision:�V2.0 3 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FS300R12OE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||18,5<br>12,6<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||16,0<br>10,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||924||g| Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 prepared�by:�ZV approved�by:�KV date�of�publication:�2016-07-29 revision:�V2.0 4 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FS300R12OE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [487 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> 600 600<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 500 VVGEGE = 13V = 11V<br>VGE = 9V<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) Schaltverluste�IGBT,Wechselrichter�(typisch)<br>transfer�characteristic�IGBT,Inverter�(typical) switching�losses�IGBT,Inverter�(typical)<br>IC�=�f�(VGE) Eon�=�f�(IC),�Eoff�=�f�(IC)<br>VCE�=�20�V VGE�=�±15�V,�RGon�=�0.75� Ω ,�RGoff�=�0.75� Ω ,�VCE�=�600�V<br>600 100<br>TTTvjvjvj = 25°C = 125°C = 150°C 90 EEEononoff, T,, T Tvjvvjj = 125°C = 1 = 125°C50°C<br>500 Eoff, Tvj = 150°C<br>80<br>70<br>400<br>60<br>300 50<br>40<br>200<br>30<br>20<br>100<br>10<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br>prepared�by:�ZV date�of�publication:�2016-07-29<br>approved�by:�KV revision:�V2.0<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FS300R12OE4P **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =300A,V CE =600V<br>100 rs | 1 a<br>90 EEEononoff, T,, T Tvjvvjj = 125°C = 1 = 125°C50°C (en| ZthJH : IGBT RAREa<br>Eoff, Tvj = 150°C<br>80<br>4 eth eee eent et<br>7<br>70<br>UZ 0,1 Leet<br>60<br>wae Se<br>50<br>a sai diiiesitiientii<br>: CH HA<br>40<br>0,01<br>30<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,0072 0,0482 0,0498 0,0288<br>10 τ i[s]: 0,000655 0,0314 0,178 1,11<br>0 0,001<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =0.75 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>600<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>VA<br>77<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Modul IGBT-Module ## FS300R12OE4P **==> picture [483 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =0.75 Ω ,V CE =600V IF =300A,V CE =600V<br>35 30<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>30<br>25<br>ess N<br>“XN<br>L-o- [-]<br>25<br>Yo 20<br>20 7 < P| ~~~ ~<br>7 ~~ ~~ >>!<br>15<br>15<br>10<br>10 fo<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJH =f (t) R=f(T)<br>1 100000<br>Z thJH : Diode Rtyp<br>10000<br>a<br>0,1 Seema meetin ‘<br>1000<br>L SSS ——E——<br>i: 1 2 3 4<br>ri[K/W]: 0,0106 0,0607 0,0774 0,0413<br>τ i[s]: 0,000592 0,025 0,119 0,881<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br> 7 **==> picture [313 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-ModulIGBT-Module FS300R12OE4P<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** **==> picture [477 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�Circuit�diagram<br>J<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [34 x 191] intentionally omitted <==** **==> picture [34 x 191] intentionally omitted <==** prepared�by:�ZV date�of�publication:�2016-07-29 approved�by:�KV revision:�V2.0 8 ## IGBT-Modul IGBT-Module ## FS300R12OE4P ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →