![FS20R06W1E3BOMA1 — IGBT Module, Six Pack [Full Bridge], 20 A, 1.55 V, 135 W, 150 °C, Module](/media/F/1/1/86C0F84CD4E4011F.webp)
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FS20R06W1E3BOMA1
IGBT Module, Six Pack [Full Bridge], 20 A, 1.55 V, 135 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 135W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Module
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 12.95 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS20R06W1E3
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VCES = 600V IC nom = 20A / ICRM = 40A
- Klimaanlagen
- • Motorantriebe • Servoumrichter
- USV-Systeme
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- VCEsat mit
- • Niedriges V CEsat
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- VCEsat
- CEsat
- Al2O3 Substrat mit kleinem thermischen Widerstand
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- Lötverbindungstechnik
- Robuste Montage durch integrierte Befestigungsklammern
- Al2O3
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- Rugged mounting due to integrated mounting clamps
1
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS20R06W1E3
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS20R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>20<br>35<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>40<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>135<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 20 A, VGE= 15 V<br>IC= 20 A, VGE= 15 V<br>IC= 20 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,034<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 18Ω<br>td on<br>0,023<br>0,023<br>0,023<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 18Ω<br>tr<br>0,029<br>0,033<br>0,034<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>td off<br>0,14<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>tf<br>0,10<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 20 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 900 A/µs (Tvj= 150°C)<br>RGon= 18Ω<br>Eon<br>0,38<br>0,48<br>0,52<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 20 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 18Ω<br>Eoff<br>0,44<br>0,57<br>0,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>140<br>100<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,00<br>1,10<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,90<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
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> IGBT-ModuleIGBT-modules FS20R06W1E3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|20|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|40|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|49,0<br>45,0<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||30,0<br>35,0<br>37,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,25<br>2,30<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,21<br>0,42<br>0,52||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,40|1,55|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,90||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1
3
## Technische�Information�/�Technical�Information
## IGBT-ModuleIGBT-modules FS20R06W1E3
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,50||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|
Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 30 A rms per connector pin
date�of�publication:�2013-10-03 revision:�2.1
prepared�by:�DK approved�by:�MB
4
IGBT-Module IGBT-modules
## FS20R06W1E3
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>40 a 40 es<br>) ;<br>Tvj = 25°C VGE = 9 V<br>36 Tvj = 125°C 36 P VGE = 11 V owe<br>E Tvj = 150°C O VGE = 13 V |<br>VGE = 15 V<br>32 eee 32 | VGE = 17 V yt<br>VGE = 19 V<br>pp e e Fe e e|<br>28 28<br>24 24<br>pti Ar<br>SRREe ae) eee<br>20 20<br>ae il id‘<br>16 16<br>12 12<br>Sane) See eee 2<br>See<br>8 8<br>see eee eeeee e<br>4 4<br>p ty<br>0 0<br>tT tT tT} LA<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =300V<br>40 1,6<br>Tvj = 25°C Eon, Tvj = 125°C<br>36 Tvj = 125°C [F] Eoff, Tvj = 125°C [LL]<br>EF T [L] vj = 150°C [OE] 1,4 Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>32<br>Pe Eb<br>1,2<br>28<br>pf | | ve —— /|<br>1,0<br>24 | | 4 fe<br>pt mo L L<br>eee ae “<br>20 0,8<br>16 ee ee ee<br>0,6<br>12<br>pf | |g | oe<br>0,4<br>8<br>Heer Hee te<br>e/a 0,2 “O<br>4<br>ne ae<br>0 0,0<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS20R06W1E3
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Eon =f{(R)E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =20A,V CE =300V<br>2,2 10 PtTTT<br>Eon, Tvj = 125°C | ZthJH : IGBT PET TT<br>2,0 = Eoff, Tvj = 125°C r it ft ff slTTT<br>Eon, Tvj = 150°C<br>1,8 f = Eoff, Tvj = 150°C Popo Ao o o i<br>PT T. | A5 | a | | ||<br>1,6 IEA<br>1,4<br>Sanee7annn LATIN LTT<br>1,2<br>1<br>1,0 PfPy ftTey]fatLL TTff}| fd|| LALaPTeeeTEAT PLere TT TTTTTTAI<br>0,8<br>| | a| | danbagespe— | |26 |<br>0,6<br>EAE CALI TTA TTI TT<br>0,4<br>i: 1 2 3 4<br>ri[K/W]: 0,198 0,384 0,762 0,556<br>0,2 PEEEEEEEEE F A τ i[s]: 0,0005 0,005 R 0,05 0,2<br>Pte CLAN | hoo<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =18 Ω ,T vj =150°C<br>44 40<br>IC, Modul Tvj = 25°C<br>40 a I C , Chip 36 Tvj = 125°C<br>a ( Tvj = 150°C ea<br>36 eeEe<br>p o} 32<br>32<br>28<br>28<br>pot P g<br>24<br>24<br>20<br>20<br>16<br>16<br>12<br>12<br>8<br>8<br>4 ee ee ee 4 KS<br>a ee EERE ZAR<br>0 0<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FS20R06W1E3
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Erec =f(I F) Erec =f(R G)<br>RGon fs Ω »,V CE =300V IF my CE = 300 V<br>0,9 0,7<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,8 FE Erec, Tvj = 150°C J |} U E Erec, Tvj = 150°C<br>0,6<br>0,7<br>P T T B a t th<br>0,5<br>0,6<br>0,50,4 COOPeerca eanes =O 0,4 LETENG\ _ EEE<br>0,3<br>0,3<br>EEocanneee SCE<br>0,2<br>Pepema, SAEtL<br>0,2<br>0,1<br>ALLE -<br>0,1<br>0,0 0,0<br>0 4 8 12 16 20 24 28 32 36 40 0 20 40 60 80 100 120 140 160 180 200<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 ee 100000 ee |<br>ZthJH : Diode Rtyp<br>H— SF _————<br>a<br>a<br>ll DO<br>a | ee | es ee<br>TH ek 10000 ET | ||<br>| ee<br>1<br>aPACTa | 1000 aN————_————NX eee<br>a a ll a ee<br>i: 1 2 3 4<br>ri[K/W]: 0,387 0,524 0,839 0,551<br>CO τ i[s]: 0,0005 0,005 0,05 0,2 PN<br>0,1 TCO or 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
7
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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FS20R06W1E3<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS20R06W1E3
## **Nutzungsbedingungen**
application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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