![FS200R12KT4RB11BOSA1 — IGBT Module, Six Pack [Full Bridge], 280 A, 1.75 V, 1 kW, 150 °C, Module](/media/F/1/A/6EE5194ACEEE0A1F.webp)
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FS200R12KT4RB11BOSA1
IGBT Module, Six Pack [Full Bridge], 280 A, 1.75 V, 1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:280A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 1kW
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 280A
- Power Dissipation Pd: 1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 280A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 88.95 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FS200R12KT4R_B11 VCES = 1200V IC nom = 200A / ICRM = 400A - Motorantriebe - Servoumrichter - - - CEsat - - T - CEsat - - T - Al2O3 Substrat mit kleinem thermischen Widerstand - Kupferbodenplatte - - Standardgehäuse - Al2O3 - - - 1 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FS200R12KT4R_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FS200R12KT4R_B11<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>200<br>280<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1000<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,65<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>14,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,03<br>0,035<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,09<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>10,5<br>18,5<br>20,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 5000 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>11,0<br>16,5<br>18,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,15<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FS200R12KT4R_B11 **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|5200<br>5000<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,20|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||240<br>250<br>260||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>33,5<br>38,5||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||8,10<br>14,5<br>16,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,26|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�CM date�of�publication:�2013-11-05 approved�by:�RS revision:�2.1 3 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FS200R12KT4R_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||21||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,80||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm| |Gewicht<br>Weight||G||300||g| Der Strom im Dauerbetrieb ist auf 50 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 50 A rms per connector pin. prepared�by:�CM approved�by:�RS date�of�publication:�2013-11-05 revision:�2.1 4 IGBT-Module IGBT-modules ## FS200R12KT4R_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 a | y v 400 es<br>Tvj = 25°C VGE = 19V<br>360 Tvj = 125°C 360 B VGE = 17V ee<br>E Tvj = 150°C LIS) VGE = 15V |<br>VGE = 13V<br>320 e— 320 VGE = 11V<br>|} fie |} i7eeane<br>VGE = 9V<br>e e<br>280 280<br>ee /<br>240 240<br>[Lsre ee ee/; F; ee<br>200 200<br>160 ee ee 160 ee ee<br>120 ‘ 120<br>ee ee ee<br>80 80<br>40 Ane 40 eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>400 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 F Tvj = 125°C e 55 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 Eoff, Tvj = 150°C<br>poo | | HTT<br>320<br>45<br>tt S l seer,<br>SR )<br>280<br>40<br>| | /<br>240<br>pt 2 35 e e<br>/, pop<br>|ee) Eee<br>200 30<br>pi pe<br>25<br>160 ee eee ee ee eee<br>/ 20 Po eae<br>120<br>Py ee<br>15<br>80<br>10<br>SP<br>40<br>5<br>0 poet: pop~ 4B 0 e T | ee| |<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 ## IGBT-Module IGBT-modules FS200R12KT4R_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =200A,V CE =600V<br>80 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C ror e ee<br>70 [-a EEonoff, T, Tvjvj = 150°C = 150°C T l tye] HOa a e ee F e e |<br>T I a a ee 0e e<br>60<br>0,1<br>5040 PPt)f] LATLoLaer}waLT Ty| | PE a PT T TY ZeeTTTeHee CTEH|TTT COT<br>30 P) ASZL YT yyy | Potpfiffi TA TT EEfp ad<br>0,01<br>PAZoott<br>20 SYy (7B| TTeeeAN<br>pO<br>ESSE) PT TT TTT i: 1 TT 2 3 4 TT T<br>10 ri[K/W]: 0,009 0,0495 0,048 0,0435<br>τ i[s]: 0,01 0,02 0,05 0,1<br>SRRRRSS<br>0 0,001<br>SRR ee aiillime i<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>500 400<br>IC, Modul Tvj = 25°C<br>450 IC, Chip 360 Tvj = 125°C<br>EIT P Tvj = 150°C oe<br>400 320<br>eee PE E<br>350 280<br>300 240<br>250 200<br>See eee eee<br>200 160<br>ee eee<br>150 120<br>100 80<br>50 40<br>pot tt | er<br>0 0<br>Pt |EL er<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Module IGBT-modules Technische Information FS200R12KT4R_B11 / Technical Information **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec = fil F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =600V IF =200A,V CE =600V<br>30 20<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 18 Erec, Tvj = 150°C<br>25<br>— an 16 Ber e eee<br>14<br>20<br>12<br>15 10<br>or ett |SAE<br>8<br>vaa ef yt | |)ee<br>10<br>6 See<br>4<br>5<br>2<br>0 0<br>0 50 100 150 200 250 300 350 400 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f (t) R=f(T)<br>1 100000<br>t $oo ZthJC : Diode Fee SIP t [— fF Rtyp a se ee ee<br>rT [TT] T T TTTT s jy e<br>a a<br>Ha n PF | ET<br>0,1 10000<br>0 ee PN<br>oe ee a<br>PT Ta TT ES NN se ee<br>rE Tt TT TT Ne ee ee<br>70 pot NE<br>PIE TE 2 ee eee<br>0,01 1000<br>eeeee aa a<br>PT TTT ETT NS<br>rT [TT] TT TT seee<br>i: 1 2 3 4<br>ri[K/W]: 0,0156 0,0858 0,0832 0,0754<br>a τ i[s]: 0,01 0,02 0,05 0,1 | | cc<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FS200R12KT4R_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data Schaltplan�/�circuit_diagram_headline** J **Gehäuseabmessungen�/�package�outlines** **==> picture [37 x 35] intentionally omitted <==** **==> picture [55 x 52] intentionally omitted <==** **==> picture [73 x 68] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�CM date�of�publication:�2013-11-05<br>approved�by:�RS revision:�2.1<br>**----- End of picture text -----**<br> 8 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> **==> picture [214 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> FS200R12KT4R_B11<br>**----- End of picture text -----**<br> **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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